Methods for production of single-crystal graphenes

    公开(公告)号:US09845551B2

    公开(公告)日:2017-12-19

    申请号:US13939086

    申请日:2013-07-10

    摘要: In some embodiments, the present disclosure pertains to methods of forming single-crystal graphenes by: (1) cleaning a surface of a catalyst; (2) annealing the surface of the catalyst; (3) applying a carbon source to the surface of the catalyst; and (4) growing single-crystal graphene on the surface of the catalyst from the carbon source. Further embodiments of the present disclosure also include a step of separating the formed single-crystal graphene from the surface of the catalyst. In some embodiments, the methods of the present disclosure also include a step of transferring the formed single-crystal graphene to a substrate. Additional embodiments of the present disclosure also include a step of growing stacks of single crystals of graphene.

    Graphene-carbon nanotube hybrid materials and use as electrodes
    33.
    发明授权
    Graphene-carbon nanotube hybrid materials and use as electrodes 有权
    石墨烯碳纳米管混合材料,用作电极

    公开(公告)号:US09455094B2

    公开(公告)日:2016-09-27

    申请号:US14358864

    申请日:2012-11-19

    摘要: Provided are methods of making graphene-carbon nanotube hybrid materials. Such methods generally include: (1) associating a graphene film with a substrate; (2) applying a catalyst and a carbon source to the graphene film; and (3) growing carbon nanotubes on the graphene film. The grown carbon nanotubes become covalently linked to the graphene film through carbon-carbon bonds that are located at one or more junctions between the carbon nanotubes and the graphene film. In addition, the grown carbon nanotubes are in ohmic contact with the graphene film through the carbon-carbon bonds at the one or more junctions. The one or more junctions may include seven-membered carbon rings. Also provided are the formed graphene-carbon nanotube hybrid materials.

    摘要翻译: 提供制造石墨烯 - 碳纳米管混合材料的方法。 这些方法通常包括:(1)将石墨烯膜与基底缔合; (2)向石墨烯膜施加催化剂和碳源; 和(3)在石墨烯膜上生长碳纳米管。 生长的碳纳米管通过位于碳纳米管和石墨烯膜之间的一个或多个结处的碳 - 碳键共价连接到石墨烯膜上。 此外,生长的碳纳米管通过在一个或多个结处的碳 - 碳键与石墨烯膜欧姆接触。 一个或多个连接点可以包括七元碳环。 还提供了形成的石墨烯 - 碳纳米管混合材料。

    Synthesis of magnetic carbon nanoribbons and magnetic functionalized carbon nanoribbons
    34.
    发明授权
    Synthesis of magnetic carbon nanoribbons and magnetic functionalized carbon nanoribbons 有权
    磁性碳纳米带和磁性官能化碳纳米带的合成

    公开(公告)号:US09449743B2

    公开(公告)日:2016-09-20

    申请号:US14374591

    申请日:2013-01-28

    摘要: Various embodiments of the present disclosure pertain to methods of making magnetic carbon nanoribbons. Such methods generally include: (1) forming carbon nanoribbons by splitting carbon nanomaterials; and (2) associating graphene nanoribbons with magnetic materials, precursors of magnetic materials, or combinations thereof. Further embodiments of the present disclosure also include a step of reducing the precursors of magnetic materials to magnetic materials. In various embodiments, the associating occurs before, during or after the splitting of the carbon nanomaterials. In some embodiments, the methods of the present disclosure further comprise a step of (3) functionalizing the carbon nanoribbons with functionalizing agents. In more specific embodiments, the functionalizing occurs in situ during the splitting of carbon nanomaterials. In further embodiments, the carbon nanoribbons are edge-functionalized. Additional embodiments of the present disclosure pertain to magnetic carbon nanoribbon compositions that were formed in accordance with the methods of the present disclosure.

    摘要翻译: 本公开的各种实施方案涉及制备磁性碳纳米带的方法。 这些方法通常包括:(1)通过分解碳纳米材料形成碳纳米带; 和(2)将石墨烯纳米带与磁性材料,磁性材料的前体或其组合相关联。 本公开的另外的实施方案还包括将磁性材料的前体还原成磁性材料的步骤。 在各种实施方案中,缔合发生在碳纳米材料分裂之前,期间或之后。 在一些实施方案中,本公开的方法还包括(3)用官能化试剂官能化碳纳米带的步骤。 在更具体的实施方案中,官能化在碳纳米材料分裂过程中就地发生。 在另外的实施方案中,碳纳米带是边缘官能化的。 本公开的另外的实施方案涉及根据本公开的方法形成的磁性碳纳米纤维组合物。

    GROWTH OF GRAPHENE FILMS FROM NON-GASEOUS CARBON SOURCES
    35.
    发明申请
    GROWTH OF GRAPHENE FILMS FROM NON-GASEOUS CARBON SOURCES 审中-公开
    来自非碳源碳源的石墨膜的生长

    公开(公告)号:US20160031711A1

    公开(公告)日:2016-02-04

    申请号:US14754983

    申请日:2015-06-30

    IPC分类号: C01B31/04

    摘要: In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.

    摘要翻译: 在各种实施方案中,本公开提供了通过以下步骤形成石墨烯膜的方法:(1)将非气态碳源沉积在催化剂表面上; (2)将非气态碳源以流量暴露于至少一种气体; 和(3)开始将非气态碳源转化为石墨烯膜,其中石墨烯膜的厚度可由气体流速控制。 本公开的另外的实施方案涉及根据本公开的方法制备的石墨烯膜。

    NANOPOROUS METAL-OXIDE MEMORY
    36.
    发明申请
    NANOPOROUS METAL-OXIDE MEMORY 有权
    纳米金属氧化物存储器

    公开(公告)号:US20160028004A1

    公开(公告)日:2016-01-28

    申请号:US14809770

    申请日:2015-07-27

    IPC分类号: H01L45/00 H01L27/24

    摘要: A nanoporous (NP) memory may include a non-porous layer and a nanoporous layer sandwiched between the bottom and top electrodes. The memory may be free of diodes, selectors, and/or transistors that may be necessary in other memories to mitigate crosstalk. The nanoporous material of the nanoporous layer may be a metal oxide, metal chalcogenide, or a combination thereof. Further, the memory may lack any additional components. Further, the memory may be free from requiring an electroformation process to allow switching between ON/OFF states.

    摘要翻译: 纳米孔(NP)存储器可以包括夹在底部和顶部电极之间的无孔层和纳米多孔层。 存储器可能没有二极管,选择器和/或可能在其他存储器中需要以减轻串扰的晶体管。 纳米多孔层的纳米多孔材料可以是金属氧化物,金属硫族化物或其组合。 此外,存储器可能缺少任何附加组件。 此外,存储器可以不需要电化过程以允许在ON / OFF状态之间切换。

    PRODUCTION OF GRAPHENE NANOPLATELETS BY OXIDATIVE ANHYDROUS ACIDIC MEDIA
    38.
    发明申请
    PRODUCTION OF GRAPHENE NANOPLATELETS BY OXIDATIVE ANHYDROUS ACIDIC MEDIA 有权
    通过氧化性酸性介质生产石墨纳米粒子

    公开(公告)号:US20150360956A1

    公开(公告)日:2015-12-17

    申请号:US14739455

    申请日:2015-06-15

    IPC分类号: C01B31/04

    摘要: In some embodiments, the present disclosure pertains to methods of producing graphene nanoplatelets by exposing graphite to a medium to form a dispersion of graphite in the medium. In some embodiments, the exposing results in formation of graphene nanoplatelets from the graphite. In some embodiments, the medium includes the following components: (a) an acid; (b) a dehydrating agent; and (c) an oxidizing agent. In some embodiments, the methods of the present disclosure result in the formation of graphene nanoplatelets at a yield of more than 90%. In some embodiments, the methods of the present disclosure result in the formation of graphene nanoplatelets in bulk quantities that are more than about 1 kg of graphene nanoplatelets. Additional embodiments of the present disclosure pertains to the formed graphene nanoplatelets. In some embodiments, the graphene nanoplatelets include a plurality of layers, such as from about 1 layer to about 100 layers.

    摘要翻译: 在一些实施方案中,本公开内容涉及通过将石墨暴露于介质以在介质中形成石墨分散体来生产石墨烯纳米片的方法。 在一些实施方案中,曝光导致从石墨形成石墨烯纳米片。 在一些实施方案中,培养基包括以下组分:(a)酸; (b)脱水剂; 和(c)氧化剂。 在一些实施方案中,本公开的方法导致以大于90%的产率形成石墨烯纳米片。 在一些实施方案中,本公开的方法导致形成大于约1kg石墨烯纳米片的批量的石墨烯纳米片。 本公开的另外的实施方案涉及形成的石墨烯纳米片。 在一些实施方案中,石墨烯纳米片包括多个层,例如约1层至约100层。

    Vertically-stacked electronic devices having conductive carbon films
    39.
    发明授权
    Vertically-stacked electronic devices having conductive carbon films 失效
    具有导电碳膜的垂直堆叠的电子器件

    公开(公告)号:US08395901B2

    公开(公告)日:2013-03-12

    申请号:US12270246

    申请日:2008-11-13

    IPC分类号: H05K7/00 H01L47/00

    摘要: Vertically-stacked electronic devices having conductive carbon films are disclosed. The vertically-stacked devices exhibit non-linear current-versus-voltage response over a voltage sweep range in various embodiments. The vertically-stacked devices may be assembled into arrays where the vertically-stacked devices may be electrically addressed independently of one another. Uses of the vertically-stacked electronic devices and arrays as two-terminal memory devices, logic units, and sensors are disclosed. Crossbar arrays of vertically-stacked electronic devices having conductive carbon films and nanowire electrodes are disclosed.

    摘要翻译: 公开了具有导电碳膜的垂直堆叠的电子器件。 在各种实施例中,垂直堆叠的器件在电压扫描范围内表现出非线性电流对电压响应。 垂直堆叠的器件可以组装成阵列,其中垂直堆叠的器件可以彼此独立地电寻址。 公开了垂直堆叠的电子设备和阵列作为双端存储器件,逻辑单元和传感器的用途。 公开了具有导电碳膜和纳米线电极的垂直堆叠的电子器件的横杆阵列。