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    Solid state laser for operation in librational modes
    31.
    发明授权
    Solid state laser for operation in librational modes 失效
    固态激光器用于演示模式

    公开(公告)号：US6134257A

    公开(公告)日：2000-10-17

    申请号：US63577

    申请日：1998-04-21

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Claire F. Gmachl ,  Deborah Lee Sivco ,  Evgueni E. Narimanov ,  Alfred Douglas Stone ,  Jens Uwe Noeckel

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Claire F. Gmachl ,  Deborah Lee Sivco ,  Evgueni E. Narimanov ,  Alfred Douglas Stone ,  Jens Uwe Noeckel

    IPC分类号： H01S5/00 ,  H01S3/08 ,  H01S3/083 ,  H01S5/065 ,  H01S5/10 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18 ,  H01S3/19

    CPC分类号： H01S3/083

    摘要： A solid state laser comprises a cavity resonator in the form of a generally cylindrical body and, located within the resonator, an active region which generates lasing light when suitably pumped. The resonator has a relatively high effective refractive index (n>2 and typically n>3) is sufficiently deformed from circularity so as to support at least one librational mode (e.g., a V-shaped or a bow-tie mode, the latter being presently preferred for generating relatively high power, directional outputs). Specifically described is a Group III-V compound semiconductor, quantum cascade (QC), micro-cylinder laser in which the resonator has a flattened quadrupolar deformation from circularity. This laser exhibits both a highly directional output emission and a three-order of magnitude increase in optical output power compared to conventional semiconductor micro-cylinder QC lasers having circularly symmetric resonators.

    摘要翻译： 固体激光器包括呈大致圆柱形体形式的空腔谐振器，并且位于谐振器内部的有源区域，其在适当泵浦时产生激光。 谐振器具有相对较高的有效折射率（n> 2且通常n> 3）从圆形度充分变形，以便支持至少一种示范模式（例如，V形或蝴蝶结模式，后者为 目前优选用于产生相对高功率的方向输出）。 具体描述的是其中谐振器具有从圆形度的扁平四极变形的III-V族化合物半导体，量子级联（QC），微圆柱激光器。 与具有圆形对称谐振器的常规半导体微型气缸QC激光器相比，该激光器表现出高度方向性的输出发射和光输出功率三位数的增加。

    Quantum cascade light emitter with pre-biased internal electronic potential
    33.
    发明授权
    Quantum cascade light emitter with pre-biased internal electronic potential 有权
    量子级联发光器具有预偏置内部电子电位

    公开(公告)号：US6055254A

    公开(公告)日：2000-04-25

    申请号：US159127

    申请日：1998-09-23

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01L29/06 ,  H01L29/15 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/3402

    摘要： Instead of trying to keep the SLs of a QC laser field free, we "pre-bias" the actual electronic potential by varying the SL period (and hence average composition) so as to achieve an essentially flat profile, on average, of upper and lower minibands, despite the presence of an applied field in the SLs. In one embodiment, in at least a first subset of the QW layers, the thicknesses of the QW layers are varied from QW layer to QW layer so as to increase in the direction of the applied field. In this embodiment, the upper and lower lasing levels are located, in the absence of an applied electric field, each at different energies from layer to layer within the first subset, so that despite the presence of an applied field, the desired flatband condition of the upper and lower minibands is realized. In a preferred embodiment, the thicknesses of the QW layers within the first subset are varied from QW layer to QW layer so as to increase in the direction of the applied field, and the thicknesses of a second subset of the barrier layers are also varied from barrier layer to barrier layer so as to decrease or increase in the direction of the applied field.

    摘要翻译： 不要试图保持QC激光场的SL不受限制，我们通过改变SL周期（因此平均组成）来“预先偏置”实际的电子电位，以便平均地获得上部和 尽管在SL中存在应用场，但是较低的迷你频段。 在一个实施例中，在QW层的至少第一子集中，QW层的厚度从QW层到QW层变化，以便在施加场的方向上增加。 在该实施例中，在没有所施加的电场的情况下，上和下激光电平各自处于第一子集内的层与层之间的不同能量，使得尽管存在施加的场，但是期望的平带条件 实现上下两个迷你吧。 在优选实施例中，第一子集内的QW层的厚度从QW层到QW层变化，以便在施加的场的方向上增加，并且阻挡层的第二子集的厚度也从 阻挡层到阻挡层，以便在施加的场的方向上减小或增加。

    Fabrication of mesa devices by MBE growth over channeled substrates
    35.
    发明授权
    Fabrication of mesa devices by MBE growth over channeled substrates 失效
    通过MBE生长在通道衬底上制造台面器件

    公开(公告)号：US4099305A

    公开(公告)日：1978-07-11

    申请号：US777400

    申请日：1977-03-14

    申请人： Alfred Yi Cho ,  Won-Tien Tsang

    发明人： Alfred Yi Cho ,  Won-Tien Tsang

    IPC分类号： H01L21/203 ,  H01L21/306 ,  B01J17/00 ,  H01L29/04

    CPC分类号： H01L21/02395 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02658 ,  H01L21/30617

    摘要： Parallel channels are separated by ridges formed in a semiconductor body in such a way that each channel is wider at its base than at its top. Molecular beam epitaxy is used to deposit semiconductor layers on the ridges and in the channels. Because each channel is narrower at its top than at its base, the configuration is essentially self-masking. That is, the layers in the channel are physically separate from those on the ridges, as would be metallic contacts deposited on the layers. This technique is employed in the fabrication of a plurality of self-aligned, stripe geometry, mesa double heterostructure junction lasers.

    摘要翻译： 平行通道以形成在半导体本体中的脊分开，使得每个通道在其底部比在其顶部更宽。 分子束外延用于在脊和通道中沉积半导体层。 因为每个通道在其顶部比在其底部更窄，所以配置基本上是自我掩蔽的。 也就是说，通道中的层与脊上的那些物理上分离，如沉积在层上的金属触点。 该技术用于制造多个自对准条纹几何，台面双异质结结形激光器。

    Unipolar, intraband optoelectronic transducers with micro-cavity resonators
    36.
    发明授权
    Unipolar, intraband optoelectronic transducers with micro-cavity resonators 有权
    具有微腔谐振器的单极，内部光电转换器

    公开(公告)号：US07092421B2

    公开(公告)日：2006-08-15

    申请号：US10651466

    申请日：2003-08-30

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Raffaele Colombelli ,  Claire F. Gmachl ,  Oskar Jon Painter ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Kartik Srinivasan ,  Donald Milan Tennant ,  Mariano Troccoli

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Raffaele Colombelli ,  Claire F. Gmachl ,  Oskar Jon Painter ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Kartik Srinivasan ,  Donald Milan Tennant ,  Mariano Troccoli

    IPC分类号： H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/1042 ,  H01S5/105 ,  H01S5/187 ,  H01S5/3213 ,  H01S5/3422 ,  H01S5/4087 ,  H01S5/42 ,  H01S2302/02

    摘要： An optoelectronic transducer comprises a unipolar, intraband active region and a micro-cavity resonator. The resonator includes a 2D array of essentially equally spaced regions that exhibits resonant modes. Each of the spaced regions has a depth that extends through the active region and has an average refractive index that is different from that of the active region. The refractive index contrast, the spacing of the spaced regions, and the dimensions of the spaced regions are mutually adapted so that the array acts as a micro-cavity resonator and so that at least one frequency of the resonant modes of the array falls within the spectrum of an optoelectronic parameter of the active region (i.e., the gain spectrum where the transducer is a laser; the absorption spectrum where the transducer is a photodetector). In a first embodiment, the transducer is an ISB laser, whereas in a second embodiment it is a unipolar, intraband photodetector. In other embodiments, the laser is a surface-emitting ISB laser and the photodetector is a vertically-illuminated detector. In another embodiment, a nonlinear optical material is optically coupled to the micro-cavity resonator, which in one case allows an ISB laser to exhibit bistable operation.

    摘要翻译： 光电转换器包括单极性，内部有源区和微腔谐振器。 谐振器包括呈现谐振模式的基本上等间隔的区域的2D阵列。 每个间隔区域具有延伸穿过有源区域并具有不同于有源区域的平均折射率的深度。 折射率对比度，间隔区域的间隔和间隔区域的尺寸相互适应，使得阵列充当微腔谐振器，并且使得阵列的谐振模式的至少一个频率落入 有源区的光电参数的光谱（即，换能器是激光的增益光谱;换能器是光电检测器的吸收光谱）。 在第一实施例中，换能器是ISB激光器，而在第二实施例中，它是单极的，内部的光检测器。 在其他实施例中，激光是表面发射ISB激光器，并且光电检测器是垂直照明的检测器。 在另一个实施例中，非线性光学材料光耦合到微腔谐振器，在一种情况下允许ISB激光器呈现双稳态操作。

    Broadband cascade light emitters
    37.
    发明授权
    Broadband cascade light emitters 有权
    宽带级联发射器

    公开(公告)号：US07010010B2

    公开(公告)日：2006-03-07

    申请号：US10465253

    申请日：2003-06-19

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Milton L. Peabody ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alexander Soibel

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Milton L. Peabody ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alexander Soibel

    IPC分类号： H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/06 ,  H01S5/1096 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3422 ,  H01S5/34306 ,  H01S5/34313 ,  H01S2304/02

    摘要： A broadband CLE capable of operation simultaneously at multiple wavelengths comprises: a core region including a multiplicity or cascade of stages, each stage including a radiative transition region. A first group of stages emits radiation at a first wavelength and at a first aggregate intensity per group, and a second group of stages emits radiation at a second wavelength and at a second aggregate intensity per group lower than the first intensity. The invention is characterized in that the second group has more stages than said first group, and the per-stage intensity of the first group is greater than that of the second group. This design reduces the difference between said first and second aggregate intensities. In one embodiment, groups that are located at or near to the ends of the cascade have more stages than groups that are centrally located within the cascade regardless of their wavelength. Our invention significantly reduces variations in modal gain across the desired broadband spectrum and produces sufficiently flat gain without requiring elaborate redesign of the stages. These features enable cw operation of a broadband intersubband laser.

    摘要翻译： 能够在多个波长同时运行的宽带CLE包括：包括多个或级联级的核心区域，每个阶段包括辐射过渡区域。 第一组阶段以每组发射第一波长和第一聚集强度的辐射，而第二组阶段以低于第一强度的第二波长发射辐射，并以每组的第二聚集强度发射。 本发明的特征在于，第二组具有比所述第一组更多的阶段，并且第一组的每阶段强度大于第二组的每阶段强度。 该设计减少了所述第一和第二聚集强度之间的差异。 在一个实施例中，位于级联端部处或附近的组具有比级联中心位置的级更多的级，而不管它们的波长如何。 我们的发明显着地减少了所需宽带频谱的模态增益的变化，并产生足够平坦的增益，而不需要对级进行精心的重新设计。 这些功能可以实现宽带子带间激光器的cw操作。

    Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
    40.
    发明授权
    Method of making an article comprising an oxide layer on a GaAs-based semiconductor body 失效
    在GaAs基半导体本体上制造包含氧化物层的制品的方法

    公开(公告)号：US06271069B1

    公开(公告)日：2001-08-07

    申请号：US09122558

    申请日：1998-07-24

    申请人： Young-Kai Chen ,  Alfred Yi Cho ,  William Scott Hobson ,  Minghwei Hong ,  Jenn-Ming Kuo ,  Jueinai Raynien Kwo ,  Donald Winslow Murphy ,  Fan Ren

    发明人： Young-Kai Chen ,  Alfred Yi Cho ,  William Scott Hobson ,  Minghwei Hong ,  Jenn-Ming Kuo ,  Jueinai Raynien Kwo ,  Donald Winslow Murphy ,  Fan Ren

    IPC分类号： H01L2976

    CPC分类号： H01L29/517 ,  C23C14/08 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66522 ,  H01L29/78 ,  H01L33/44 ,  H01S5/028

    摘要： Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e.g., GaAs-based ICs) that comprise such a MOS-FET. The MOS-FETs are planar devices, without etched recess or epitaxial re-growth, with gate oxide that is primarily Ga2O3, and with low midgap interface state density (e.g., at most 1×1011 cm−2 eV−1 at 20° C.). The method involves ion implantation, implant activation in an As-containing atmosphere, surface reconstruction, and in situ deposition of the gate oxide. In preferred embodiments, no processing step subsequent to gate oxide formation is carried out above 300° C. in air, or above about 700° C. in UHV. The method makes possible fabrication of planar enhancement-type MOS-FETs having excellent characteristics, and also makes possible fabrication of complementary MOS-FETs, as well as ICs comprising MOS-FETs and MES-FETs. The method includes deposition of gate oxide of overall composition GaxAyOz, where Ga substantially is in the 3+ oxidation state, A is one or more electropositive stabilizer element adapted for stabilizing Ga in the 3+ oxidation state, x is greater than or equal to zero, z is selected to satisfy the requirement that both Ga and A are substantially fully oxidized, and y/(x+y) is greater than 0.1.

    摘要翻译： 公开了制造基于GaAs的增强型MOS-FET的方法以及包括这种MOS-FET的制品（例如，基于GaAs的IC）。 MOS-FET是没有蚀刻凹槽或外延再生长的平面器件，其栅极氧化物主要是Ga 2 O 3，并且具有低的中间隙界面态密度（例如，在20℃下至多为1×10 11 cm -2 eV-1） 。 该方法涉及离子注入，在含As气氛中的注入活化，表面重构和栅极氧化物的原位沉积。 在优选的实施方案中，栅极氧化物形成之后的处理步骤在高于300℃的空气中或在高于约700℃的UHV中进行。 该方法可以制造具有优异特性的平面增强型MOS-FET，并且还可以制造互补MOS-FET以及包括MOS-FET和MES-FET的IC。 该方法包括沉积总体组成为GaxAyOz的栅极氧化物，其中Ga基本上处于3+氧化态，A是一种或多种适用于稳定3+氧化态的Ga的正电荷稳定剂元素，x大于或等于零 选择z以满足Ga和A基本上完全氧化，y /（x + y）大于0.1的要求。