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    Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons
    2.
    发明授权
    Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons 失效
    结合基于表面等离子体激元的波导的长波长半导体激光器

    公开(公告)号：US06301282B1

    公开(公告)日：2001-10-09

    申请号：US09124295

    申请日：1998-07-29

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Jerome Faist ,  Carlo Sirtori

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Jerome Faist ,  Carlo Sirtori

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/10 ,  H01S5/1046 ,  H01S5/323 ,  H01S5/3402 ,  H01S2301/145

    摘要： A long wavelength (e.g., mid-IR to far-IR) semiconductor laser comprises an active region and at least one cladding region characterized in that the cladding region includes a light guiding interface between two materials which have dielectric constants opposite in sign. Consequently, the guided modes are transverse magnetic polarized surface waves (i.e., surface plasmons) which propagate along the interface without the need for a traditional dielectric cladding. In a preferred embodiment, the interface is formed between a semiconductor layer and a metal layer. The complex refractive index of the metal layer preferably has an imaginary component which is much larger than its real component. In an illustrative embodiment, our laser includes a QC active region sandwiched between a pair of cladding regions one of which is a guiding interface based on surface plasmons and the other of which is a dielectric (e.g., semiconductor) structure.

    摘要翻译： 长波长（例如，中红外至红外IR）半导体激光器包括有源区和至少一个包层区，其特征在于包层区包括具有与符号相反的介电常数的两种材料之间的导光界面。 因此，引导模式是横向磁极化表面波（即，表面等离子体激元），其沿着界面传播而不需要传统的电介质包层。 在优选实施例中，界面形成在半导体层和金属层之间。 金属层的复合折射率优选具有远大于其实际分量的虚部。 在说明性实施例中，我们的激光器包括夹在一对包层区域之间的QC有源区域，其中一个是基于表面等离子体激元的引导界面，另一个是电介质（例如半导体）结构。

    Article comprising a dual-wavelength quantum cascade photon source
    4.
    发明授权
    Article comprising a dual-wavelength quantum cascade photon source 失效
    文章包括双波长量子级联光子源

    公开(公告)号：US6144681A

    公开(公告)日：2000-11-07

    申请号：US033250

    申请日：1998-03-02

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01L33/06 ,  H01S5/00 ,  H01S5/34 ,  H01S3/19

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/3402 ,  H01S5/1096

    摘要： The quantum cascade (QC) photon source according to this invention can emit simultaneously at two distinct wavelengths, typically both in the mid-infrared. This is accomplished through provision of a semiconductor layer structure in which, at the proper bias voltage, electrons are injected into an energy level E.sub.3 and then forced to cascade through an intermediate level E.sub.2 before reaching the ground state E.sub.1 of the active region. In the process, photons of energy E.sub.3 -E.sub.2 (wavelength .lambda..sub.1) and E.sub.2 -E.sub.1 (wavelength .lambda..sub.2) are emitted. Dual wavelength photon sources according to this invention can be used in a variety of ways, e.g., to determine the absorption of a gaseous sample at wavelengths .lambda..sub.1 and .lambda..sub.2, exemplarily to determine the concentration of a particular chemical compound in the sample.

    摘要翻译： 根据本发明的量子级联（QC）光子源可以以两个不同的波长同时发射，通常在中红外。 这是通过提供半导体层结构来实现的，其中在适当的偏置电压下，电子被注入到能级E3中，然后在到达有源区的基态E1之前强制级联通过中间电平E2。 在该过程中，发射能量为E3-E2（波长λ1）和E2-E1（波长λ2）的光子。 根据本发明的双波长光子源可以以多种方式使用，例如确定波长λ1和λ2处的气体样品的吸收，例如用于确定样品中特定化合物的浓度。

    Quantum cascade laser
    5.
    发明授权
    Quantum cascade laser 失效
    量子级联激光器

    公开(公告)号：US5936989A

    公开(公告)日：1999-08-10

    申请号：US841059

    申请日：1997-04-29

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Gaetano Scamarcio ,  Carlo Sirtori ,  Deborah Lee Sivco

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Gaetano Scamarcio ,  Carlo Sirtori ,  Deborah Lee Sivco

    IPC分类号： H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/3402 ,  H01S5/34306 ,  H01S5/34313

    摘要： The core of the disclosed novel quantum cascade (QC) laser comprises a multiplicity of nominally identical repeat units, with a given repeat unit comprising a superlattice active region and a carrier injector region. Associated with the superlattice active region is an upper and a lower energy miniband, with the lasing transition being the transition from the lower edge of the upper miniband to the upper edge of the lower miniband. The injector facilitates carrier transport from the lower miniband to the upper miniband of the adjacent downstream repeat unit. QC lasers according to this invention can be designed to emit in the infrared, e.g., in the wavelength region 3-15 .mu.m, and can have high power.

    摘要翻译： 公开的新颖量子级联（QC）激光器的核心包括多个名义上相同的重复单元，其中给定的重复单元包括超晶格有源区和载流子注入区。 与超晶格有源区相关联的是上能和下能量的迷你波导，其中激光跃迁是从上微型小型飞机的下边缘到下部小型飞机的上边缘的过渡。 注射器便于载体从相邻的下游重复单元的下部微型飞行器到上部小型飞机传送。 根据本发明的QC激光器可以设计成在红外线中发射，例如在3-15μm的波长区域中，并且可以具有高功率。

    Article comprising an improved quantum cascade laser
    6.
    发明授权
    Article comprising an improved quantum cascade laser 失效
    文章包括改进的量子级联激光器

    公开(公告)号：US5727010A

    公开(公告)日：1998-03-10

    申请号：US618886

    申请日：1996-03-20

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco

    IPC分类号： H01S5/00 ,  H01S5/34 ,  H01S3/19 ,  H01S3/18

    CPC分类号： B82Y20/00 ,  H01S5/3402

    摘要： The disclosed improved quantum cascade (QC) laser comprises features that facilitate lasing at temperatures above 260 K, preferably above 300 K. Among the features is a wavefunction-increasing feature that enhances the amplitude of the lasing level wavefunction in the adjacent upstream barrier layer, thereby increasing carrier injection efficiency into the lasing level. Exemplarily, the wavefunction-increasing feature is an approximately disposed thin quantum well. Among the features typically is also a chirped superlattice in the injection/relaxation region that acts as a Bragg reflector to suppress escape of carriers from the lasing level in the continuum, while facilitating carrier extraction from the ground state into a miniband, with the energy width of the miniband decreasing over at least a portion of the thickness of the injection/relaxation region.

    摘要翻译： 所公开的改进的量子级联（QC）激光器包括在260K以上，优选高于300K的温度下促进激光的特征。其特征在于增加相邻上游阻挡层中激光电平波函数的幅度的波函数增加特征， 从而将载体注入效率提高到激光级。 示例性地，波函数增加特征是大致布置的薄量子阱。 其中的特征通常也是注入/弛豫区域中的啁啾超晶格，其作为布拉格反射器，以抑制载流子从连续体中的激光闪烁级别的逸出，同时促进载体从基态提取到微型计算机中，其能量宽度 的最小值在注入/松弛区域的厚度的至少一部分上减小。

    Article comprising a strain-compensated QC laser
    7.
    发明授权
    Article comprising a strain-compensated QC laser 失效
    文章包括应变补偿QC激光

    公开(公告)号：US6023482A

    公开(公告)日：2000-02-08

    申请号：US12300

    申请日：1998-01-23

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Jerome Faist ,  Albert Lee Hutchinson ,  Deborah Lee Sivco

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Jerome Faist ,  Albert Lee Hutchinson ,  Deborah Lee Sivco

    IPC分类号： H01S5/00 ,  H01S5/06 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/3402 ,  H01S5/0612 ,  H01S5/12 ,  H01S5/3403 ,  H01S5/3406

    摘要： A quantum cascade (QC) laser has a multilayer core region comprising alternating layers of a first and a second semiconductor material, with lattice constants a.sub.1 and a.sub.2, respectively. The first material is selected such that a.sub.1 >a.sub.0, where a, is the lattice constant of the substrate (typically InP), and the second material is selected such that a.sub.2 >a.sub.0. The materials are also selected such that the conduction band discontinuity .DELTA.E.sub.c between the first and second materials is greater than 520 meV in absolute value. The multilayer core comprises a multiplicity of essentially identical multilayer repeat units. The layer thicknesses and materials of the repeat units are selected to substantially provide strain compensation over a repeat unit. QC lasers according to this invention preferably comprise a distributed feedback feature, (e.g., a Bragg grating) selected to ensure single mode laser emission, and can be designed for operation at a wavelength in the first atmospheric window, typically about 3-5 .mu.m. Such lasers can advantageously be used for absorption spectroscopy, e.g., for emission monitoring.

    摘要翻译： 量子级联（QC）激光器具有包括第一和第二半导体材料的交替层的多层芯区域，分别具有晶格常数a1和a2。 选择第一材料使得a1> a0，其中a是衬底的晶格常数（通常为InP），并且选择第二材料使得a2> a0。 这些材料也被选择成使得第一和第二材料之间的导带不连续性DELTA Ec绝对值大于520meV。 多层芯包括多个基本相同的多层重复单元。 选择重复单元的层厚度和材料以在重复单元上基本上提供应变补偿。 根据本发明的QC激光器优选地包括被选择用于确保单模激光发射的分布反馈特征（例如，布拉格光栅），并且可以设计成在第一大气窗口中的波长下操作，通常为约3-5μm 。 这种激光器可以有利地用于吸收光谱，例如用于发射监测。

    Intersubband light source with separate electron injector and reflector/extractor
    10.
    发明授权
    Intersubband light source with separate electron injector and reflector/extractor 有权
    带有独立电子注入器和反射器/提取器的带内光源

    公开(公告)号：US06324199B1

    公开(公告)日：2001-11-27

    申请号：US09195260

    申请日：1998-11-18

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Sung-Nee George Chu ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/3402

    摘要： An intersubband semiconductor light source comprises a core region that includes a unipolar, radiative transition (RT) region having upper and lower energy levels, an injector-only (I) region disposed on one side of the RT region, and a reflector/extractor-only (R/E) region disposed on the other side of the RT region. The I region has a first miniband of energy levels aligned so as to inject electrons into the upper energy level, and the R/E region has a second miniband of energy levels aligned so as to extract electrons from the lower energy level. The R/E region also has a minigap aligned so as to inhibit the extraction of electrons from the upper level. A suitable voltage applied across the core region is effective to cause the RT region to generate light at a wavelength determined by the energy difference between the upper and lower energy levels. Low voltage operation at less than 3 V is described.

    摘要翻译： 子带间半导体光源包括芯区域，其包括具有上和下能级的单极辐射跃迁（RT）区域，设置在RT区域的一侧上的仅注射器（I）区域，以及反射器/ （R / E）区域设置在RT区域的另一侧。 I区具有对准能量水平的第一小能级以将电子注入到上能量级中，并且R / E区具有对准的能级的第二小容纳，从而从较低的能级提取电子。 R / E区域也具有微小的栅极排列，从而抑制从上层提取电子。 在芯区域上施加的合适电压有效地使得RT区域产生由上和下能量级之间的能量差确定的波长的光。 描述低于3V的低电压操作。