公开(公告)号：US09263272B2

公开(公告)日：2016-02-16

申请号：US13474512

申请日：2012-05-17

申请人： Min-Feng Kao ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Feng-Chi Hung

发明人： Min-Feng Kao ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Tzu-Hsuan Hsu ,  Feng-Chi Hung

IPC分类号： H01L29/02 ,  H01L21/265 ,  H01L21/28 ,  H01L29/423 ,  H01L23/544 ,  H01L27/146 ,  H01L21/762 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/2652 ,  H01L21/28114 ,  H01L21/76229 ,  H01L23/544 ,  H01L27/14609 ,  H01L27/1464 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device includes a semiconductor substrate, and a Device Isolation (DI) region extending from a top surface of the semiconductor substrate into the semiconductor substrate. A gate dielectric is disposed over an active region of the semiconductor substrate, wherein the gate dielectric extends over the DI region. A gate electrode is disposed over the gate dielectric, wherein a notch of the gate electrode overlaps a portion of the DI region.

摘要翻译： 一种器件包括半导体衬底和从半导体衬底的顶表面延伸到半导体衬底中的器件隔离（DI）区域。 栅极电介质设置在半导体衬底的有源区上，其中栅极电介质延伸超过DI区域。 栅电极设置在栅极电介质上，其中栅电极的凹口与DI区的一部分重叠。

公开(公告)号：US09224770B2

公开(公告)日：2015-12-29

申请号：US13457301

申请日：2012-04-26

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

IPC分类号： H01L31/0203 ,  H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14689

摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.

摘要翻译： 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施例中，在第一感光二极管上形成第一滤色器，并且在第二感光二极管上形成第二滤色器，并且在第一滤色器和第二滤色器之间形成间隙。 间隙将用于反射否则将从第一滤色器过渡到第二滤色器的光，从而减少第一光敏二极管和第二感光二极管之间的串扰。 也可以在第一感光二极管和第二感光二极管之间形成反射栅格，以帮助反射并进一步减少串扰量。

公开(公告)号：US08987855B2

公开(公告)日：2015-03-24

申请号：US13198057

申请日：2011-08-04

申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Shuang-Ji Tsai ,  Yueh-Chiou Lin

发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Shuang-Ji Tsai ,  Yueh-Chiou Lin

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/02

CPC分类号： H01L27/14687 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

摘要： An image sensor device includes a semiconductor substrate having a front side and a backside. A first dielectric layer is on the front side of the semiconductor substrate. A metal pad is in the first dielectric layer. A second dielectric layer is over the first dielectric layer and on the front side of the semiconductor substrate. An opening penetrates through the semiconductor substrate from the backside of the semiconductor substrate, wherein the opening includes a first portion extending to expose a portion of the metal pad and a second portion extending to expose a portion of the second dielectric layer. A metal layer is formed in the first portion and the second portion of the opening.

公开(公告)号：US20140061737A1

公开(公告)日：2014-03-06

申请号：US13598275

申请日：2012-08-29

申请人： Wen-I Hsu ,  Min-Feng Kao ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Tzu-Hsuan Hsu ,  Wen-De Wang

发明人： Wen-I Hsu ,  Min-Feng Kao ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Tzu-Hsuan Hsu ,  Wen-De Wang

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L27/088

CPC分类号： H01L27/14689 ,  H01L21/761 ,  H01L21/76237 ,  H01L27/1463 ,  H01L27/14643 ,  H01L29/0649

摘要： A system and method for isolating semiconductor devices is provided. An embodiment comprises an isolation region that is laterally removed from source/drain regions of semiconductor devices and has a dielectric material extending over the isolation implant between the source/drain regions. The isolation region may be formed by forming an opening through a layer over the substrate, depositing a dielectric material along the sidewalls of the opening, implanting ions into the substrate after the deposition, and filling the opening with another dielectric material.

摘要翻译： 提供一种用于隔离半导体器件的系统和方法。 一个实施例包括从半导体器件的源极/漏极区域侧向移除的隔离区域，并且具有在源极/漏极区域之间的隔离注入物上延伸的介电材料。 可以通过在衬底上形成通过层的开口形成隔离区域，沿着开口的侧壁沉积电介质材料，在沉积之后将离子注入到衬底中，并用另一种电介质材料填充该开口。

公开(公告)号：US20140042298A1

公开(公告)日：2014-02-13

申请号：US13571099

申请日：2012-08-09

申请人： Meng-Hsun Wan ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Meng-Hsun Wan ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L27/148

CPC分类号： H01L27/14634 ,  H01L27/1464 ,  H01L27/1469

摘要： A device includes an image sensor chip having an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip, wherein the read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip, wherein the peripheral circuit chip includes a logic circuit.

摘要翻译： 一种装置包括其中具有图像传感器的图像传感器芯片。 读出芯片是底层的并且结合到图像传感器芯片上，其中读出芯片包括从基本上由复位晶体管，源极跟随器，行选择器及其组合组成的组中选择的逻辑器件。 逻辑器件和图像传感器彼此电耦合，并且是相同像素单元的部分。 外围电路芯片在下面并与读出的芯片结合，其中外围电路芯片包括一个逻辑电路。

公开(公告)号：US08629523B2

公开(公告)日：2014-01-14

申请号：US12761736

申请日：2010-04-16

申请人： Yu-Hao Shih ,  Szu-Ying Chen ,  Hsing-Lung Chen ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Volume Chien

发明人： Yu-Hao Shih ,  Szu-Ying Chen ,  Hsing-Lung Chen ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Volume Chien

IPC分类号： H01L31/0232

CPC分类号： H01L27/14685 ,  H01L27/14629 ,  H01L27/1464 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/18

摘要： The structures of reflective shields and methods of making such structures described enable reflection of light that has not be absorbed by photodiodes in image sensor devices and increase quantum efficiency of the photodiodes. Such structures can be applied (or used) for any image sensors to improve image quality. Such structures are particular useful for image sensors with smaller pixel sizes and for long-wavelength light (or rays), whose absorption length (or depth) could be insufficient, especially for backside illumination (BSI) devices. The reflective shields could double, or more than double, the absorption depth for light passing through the image sensors and getting reflected back to the photodiodes. Concave-shaped reflective shields have the additional advantage of directing reflected light toward the image sensors.

摘要翻译： 反射屏蔽的结构和制造这样的结构的方法使得能够反射未被图像传感器装置中的光电二极管吸收的光并提高光电二极管的量子效率。 这种结构可以应用于（或用于）任何图像传感器，以提高图像质量。 这种结构对于具有较小像素尺寸的图像传感器和对于其吸收长度（或深度）可能不足的长波长光（或光线）特别有用，尤其对于背面照明（BSI）装置。 反射屏蔽可以使通过图像传感器的光的吸收深度增加一倍或两倍以上，并被反射回到光电二极管。 凹形反射屏蔽具有将反射光引向图像传感器的额外优点。

公开(公告)号：US20130307104A1

公开(公告)日：2013-11-21

申请号：US13476785

申请日：2012-05-21

申请人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Wen-De Wang

发明人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Jeng-Shyan Lin ,  Wen-De Wang

IPC分类号： H01L31/0232

CPC分类号： H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464

摘要： A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a cavity vertically aligned with the pixel region, and a color filter material disposed in the cavity between the walls of the grid.

摘要翻译： 半导体器件包括：衬底，其包括并入有光电二极管的像素区域，设置在衬底上的栅格，并且具有限定与像素区域垂直对准的空腔的壁;以及布置在栅格壁之间的空腔中的滤色器材料。

公开(公告)号：US20130020662A1

公开(公告)日：2013-01-24

申请号：US13185204

申请日：2011-07-18

申请人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Wen-De Wang

发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Wen-De Wang

IPC分类号： H01L31/02

CPC分类号： H01L27/146 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

摘要： Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.

摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供其中设置有辐射感测区域的第一基板。 该方法包括提供具有氢注入层的第二衬底，氢注入层将第二衬底分成第一部分和第二部分。 该方法包括将第二衬底的第一部分接合到第一衬底。 该方法包括在接合之后，去除第二衬底的第二部分。 该方法包括在去除之后，在第二衬底的第一部分中形成一个或多个微电子器件。 该方法包括在第二基板的第一部分上形成互连结构，所述互连结构包含电耦合到微电子器件的互连特征。

公开(公告)号：US08227288B2

公开(公告)日：2012-07-24

申请号：US12413752

申请日：2009-03-30

申请人： Wen-De Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Jeng-Shyan Lin

发明人： Wen-De Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Jeng-Shyan Lin

IPC分类号： H01L21/00

CPC分类号： H01L27/14685 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.

摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的装置基板。 该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。 该方法还包括在器件衬底的背面上形成透明层。 该方法还包括在透明层中形成开口，该开口与隔离结构对准。 该方法还包括用不透明材料填充开口。

公开(公告)号：US20110298072A1

公开(公告)日：2011-12-08

申请号：US12794101

申请日：2010-06-04

申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.

摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的基板。 图像传感器包括设置在基板中的第一和第二放射线检测装置。 第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。 第一和第二脊各自具有第一折射率值。 第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。