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    Inserted reflective shield to improve quantum efficiency of image sensors
    1.
    发明授权
    Inserted reflective shield to improve quantum efficiency of image sensors 有权
    插入反射屏蔽，提高图像传感器的量子效率

    公开(公告)号：US08629523B2

    公开(公告)日：2014-01-14

    申请号：US12761736

    申请日：2010-04-16

    申请人： Yu-Hao Shih ,  Szu-Ying Chen ,  Hsing-Lung Chen ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Volume Chien

    发明人： Yu-Hao Shih ,  Szu-Ying Chen ,  Hsing-Lung Chen ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Volume Chien

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14685 ,  H01L27/14629 ,  H01L27/1464 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/18

    摘要： The structures of reflective shields and methods of making such structures described enable reflection of light that has not be absorbed by photodiodes in image sensor devices and increase quantum efficiency of the photodiodes. Such structures can be applied (or used) for any image sensors to improve image quality. Such structures are particular useful for image sensors with smaller pixel sizes and for long-wavelength light (or rays), whose absorption length (or depth) could be insufficient, especially for backside illumination (BSI) devices. The reflective shields could double, or more than double, the absorption depth for light passing through the image sensors and getting reflected back to the photodiodes. Concave-shaped reflective shields have the additional advantage of directing reflected light toward the image sensors.

    摘要翻译： 反射屏蔽的结构和制造这样的结构的方法使得能够反射未被图像传感器装置中的光电二极管吸收的光并提高光电二极管的量子效率。 这种结构可以应用于（或用于）任何图像传感器，以提高图像质量。 这种结构对于具有较小像素尺寸的图像传感器和对于其吸收长度（或深度）可能不足的长波长光（或光线）特别有用，尤其对于背面照明（BSI）装置。 反射屏蔽可以使通过图像传感器的光的吸收深度增加一倍或两倍以上，并被反射回到光电二极管。 凹形反射屏蔽具有将反射光引向图像传感器的额外优点。

    Method and apparatus for image sensor packaging
    3.
    发明授权
    Method and apparatus for image sensor packaging 有权
    图像传感器封装的方法和装置

    公开(公告)号：US08710607B2

    公开(公告)日：2014-04-29

    申请号：US13547269

    申请日：2012-07-12

    申请人： Szu-Ying Chen ,  Tzu-Jui Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu

    发明人： Szu-Ying Chen ,  Tzu-Jui Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu

    IPC分类号： H01L31/18 ,  H01L31/02 ,  H01L27/146

    CPC分类号： H01L27/14636 ,  H01L24/06 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1464 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2924/12043

    摘要： Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a BSI sensor device with an application specific integrated circuit (ASIC) are disclosed. A bond pad array may be formed in a bond pad area of a BSI sensor where the bond pad array comprises a plurality of bond pads electrically interconnected, wherein each bond pad of the bond pad array is of a small size which can reduce the dishing effect of a big bond pad. The plurality of bond pads of a bond pad array may be interconnected at the same layer of the pad or at a different metal layer. The BSI sensor may be bonded to an ASIC in a face-to-face fashion where the bond pad arrays are aligned and bonded together.

    摘要翻译： 公开了用专用集成电路（ASIC）封装背面照明（BSI）图像传感器或BSI传感器装置的方法和装置。 接合焊盘阵列可以形成在BSI传感器的接合焊盘区域中，其中接合焊盘阵列包括电互连的多个接合焊盘，其中接合焊盘阵列的每个接合焊盘是小尺寸的，这可以减小凹陷效应 的大债券垫。 接合焊盘阵列的多个接合焊盘可以在焊盘的相同层处或在不同的金属层处互连。 BSI传感器可以以面对面的方式结合到ASIC，其中接合焊盘阵列对准并结合在一起。

    TRANSPARENT CONDUCTIVE FILM FOR IMPROVING CHARGE TRANSFER IN BACKSIDE ILLUMINATED IMAGE SENSOR
    4.
    发明申请
    TRANSPARENT CONDUCTIVE FILM FOR IMPROVING CHARGE TRANSFER IN BACKSIDE ILLUMINATED IMAGE SENSOR 有权
    用于改进背面照明图像传感器中的电荷转移的透明导电膜

    公开(公告)号：US20120205730A1

    公开(公告)日：2012-08-16

    申请号：US13026994

    申请日：2011-02-14

    申请人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

    发明人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

    IPC分类号： H01L31/113 ,  H01L31/18

    CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/1461 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, an image sensor device includes a substrate having a front surface and a back surface; a sensor element disposed at the front surface of the substrate, the sensor element being operable to sense radiation projected toward the back surface of the substrate; and a transparent conductive layer disposed over the back surface of the substrate, the transparent conductive layer at least partially overlying the sensor element. The transparent conductive layer is configured for being electrically coupled to a bottom portion of the sensor element.

    摘要翻译： 本公开提供了一种图像传感器装置和形成图像传感器装置的方法。 在一个示例中，图像传感器装置包括具有前表面和后表面的基板; 设置在所述基板的前表面处的传感器元件，所述传感器元件可操作以感测朝向所述基板的后表面投射的辐射; 以及设置在所述基板的所述背面上方的透明导电层，所述透明导电层至少部分地覆盖所述传感器元件。 透明导电层被配置为电耦合到传感器元件的底部。

    CMOS Image Sensor Chips with Stacked Scheme and Methods for Forming the Same
    8.
    发明申请
    CMOS Image Sensor Chips with Stacked Scheme and Methods for Forming the Same 审中-公开
    具有堆叠方案的CMOS图像传感器芯片及其形成方法

    公开(公告)号：US20140042298A1

    公开(公告)日：2014-02-13

    申请号：US13571099

    申请日：2012-08-09

    申请人： Meng-Hsun Wan ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

    发明人： Meng-Hsun Wan ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

    IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L27/148

    CPC分类号： H01L27/14634 ,  H01L27/1464 ,  H01L27/1469

    摘要： A device includes an image sensor chip having an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip, wherein the read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip, wherein the peripheral circuit chip includes a logic circuit.

    摘要翻译： 一种装置包括其中具有图像传感器的图像传感器芯片。 读出芯片是底层的并且结合到图像传感器芯片上，其中读出芯片包括从基本上由复位晶体管，源极跟随器，行选择器及其组合组成的组中选择的逻辑器件。 逻辑器件和图像传感器彼此电耦合，并且是相同像素单元的部分。 外围电路芯片在下面并与读出的芯片结合，其中外围电路芯片包括一个逻辑电路。