Inserted reflective shield to improve quantum efficiency of image sensors
    1.
    发明授权
    Inserted reflective shield to improve quantum efficiency of image sensors 有权
    插入反射屏蔽,提高图像传感器的量子效率

    公开(公告)号:US08629523B2

    公开(公告)日:2014-01-14

    申请号:US12761736

    申请日:2010-04-16

    IPC分类号: H01L31/0232

    摘要: The structures of reflective shields and methods of making such structures described enable reflection of light that has not be absorbed by photodiodes in image sensor devices and increase quantum efficiency of the photodiodes. Such structures can be applied (or used) for any image sensors to improve image quality. Such structures are particular useful for image sensors with smaller pixel sizes and for long-wavelength light (or rays), whose absorption length (or depth) could be insufficient, especially for backside illumination (BSI) devices. The reflective shields could double, or more than double, the absorption depth for light passing through the image sensors and getting reflected back to the photodiodes. Concave-shaped reflective shields have the additional advantage of directing reflected light toward the image sensors.

    摘要翻译: 反射屏蔽的结构和制造这样的结构的方法使得能够反射未被图像传感器装置中的光电二极管吸收的光并提高光电二极管的量子效率。 这种结构可以应用于(或用于)任何图像传感器,以提高图像质量。 这种结构对于具有较小像素尺寸的图像传感器和对于其吸收长度(或深度)可能不足的长波长光(或光线)特别有用,尤其对于背面照明(BSI)装置。 反射屏蔽可以使通过图像传感器的光的吸收深度增加一倍或两倍以上,并被反射回到光电二极管。 凹形反射屏蔽具有将反射光引向图像传感器的额外优点。

    Dual shallow trench isolation and related applications
    2.
    发明授权
    Dual shallow trench isolation and related applications 有权
    双浅沟槽隔离及相关应用

    公开(公告)号:US09196547B2

    公开(公告)日:2015-11-24

    申请号:US12751126

    申请日:2010-03-31

    摘要: Embodiments of the invention relate to dual shallow trench isolations (STI). In various embodiments related to CMOS Image Sensor (CIS) technologies, the dual STI refers to one STI structure in the pixel region and another STI structure in the periphery or logic region. The depth of each STI structure depends on the need and/or isolation tolerance of devices in each region. In an embodiment, the pixel region uses NMOS devices and the STI in this region is shallower than that of in the periphery region that includes both NMOS and PMOS device having different P- and N-wells and that desire more protective isolation (i.e., deeper STI). Depending on implementations, different numbers of masks (e.g., two, three) are used to generate the dual STI, and are disclosed in various method embodiments.

    摘要翻译: 本发明的实施例涉及双重浅沟槽隔离(STI)。 在涉及CMOS图像传感器(CIS)技术的各种实施例中,双STI是指像素区域中的一个STI结构和外围或逻辑区域中的另一个STI结构。 每个STI结构的深度取决于每个区域中器件的需要和/或隔离容差。 在一个实施例中,像素区域使用NMOS器件,并且该区域中的STI比包括具有不同P阱和N阱的NMOS和PMOS器件的外围区域中的STI浅,并且需要更多的保护隔离(即,更深的 STI)。 根据实施方案,使用不同数量的掩模(例如,两个,三个)来产生双STI,并且在各种方法实施例中公开。

    Systems and methods for detecting device-under-test dependency
    3.
    发明授权
    Systems and methods for detecting device-under-test dependency 有权
    用于检测受测设备的测试依赖性的系统和方法

    公开(公告)号:US07195537B1

    公开(公告)日:2007-03-27

    申请号:US11245532

    申请日:2005-10-07

    IPC分类号: B24B49/00

    CPC分类号: B24B37/04 B24B51/00

    摘要: A system of process control is provided. The system comprises a first processing tool, a first sensor, a second processing tool, and a processor. The first processing tool processes a first workpiece. The first sensor provides real-time monitoring (RTM) data of the first processing tool while processing the first workpiece. The second processing tool processes the first workpiece subsequent to the first processing tool. The processor adjusts, according to the real-time monitoring data and a preset program, the first processing tool for processing a second workpiece, and the second processing tool for processing the first workpiece.

    摘要翻译: 提供了一种过程控制系统。 该系统包括第一处理工具,第一传感器,第二处理工具和处理器。 第一加工工具处理第一工件。 第一个传感器在处理第一个工件时提供第一个处理工具的实时监控(RTM)数据。 第二处理工具在第一处理工具之后处理第一工件。 处理器根据实时监视数据和预设程序调整用于处理第二工件的第一处理工具和用于处理第一工件的第二处理工具。

    Backside Illuminated CMOS Image Sensor
    5.
    发明申请
    Backside Illuminated CMOS Image Sensor 有权
    背面照明CMOS图像传感器

    公开(公告)号:US20130149807A1

    公开(公告)日:2013-06-13

    申请号:US13416004

    申请日:2012-03-09

    IPC分类号: H01L31/0232 H01L31/02

    摘要: A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.

    摘要翻译: 背面照明CMOS图像传感器包括使用前侧离子注入工艺和邻近光有源区形成的延伸的光有源区在衬底上形成的光有源区,其中扩展的光有源区通过使用背侧离子注入形成 处理。 背面照明的CMOS图像传感器还可以包括在衬底的背面上的激光退火层。 扩展的光有源区域有助于增加转换成电子的光子数量,以提高量子效率。

    SYSTEMS AND METHODS FOR DETECTING DEVICE-UNDER-TEST DEPENDENCY
    6.
    发明申请
    SYSTEMS AND METHODS FOR DETECTING DEVICE-UNDER-TEST DEPENDENCY 有权
    用于检测设备的测试依据的系统和方法

    公开(公告)号:US20070082581A1

    公开(公告)日:2007-04-12

    申请号:US11245532

    申请日:2005-10-07

    IPC分类号: B24B49/00 G06F19/00

    CPC分类号: B24B37/04 B24B51/00

    摘要: A system of process control is provided. The system comprises a first processing tool, a first sensor, a second processing tool, and a processor. The first processing tool processes a first workpiece. The first sensor provides real-time monitoring (RTM) data of the first processing tool while processing the first workpiece. The second processing tool processes the first workpiece subsequent to the first processing tool. The processor adjusts, according to the real-time monitoring data and a preset program, the first processing tool for processing a second workpiece, and the second processing tool for processing the first workpiece.

    摘要翻译: 提供了一种过程控制系统。 该系统包括第一处理工具,第一传感器,第二处理工具和处理器。 第一加工工具处理第一工件。 第一个传感器在处理第一个工件时提供第一个处理工具的实时监控(RTM)数据。 第二处理工具在第一处理工具之后处理第一工件。 处理器根据实时监视数据和预设程序调整用于处理第二工件的第一处理工具和用于处理第一工件的第二处理工具。

    Backside illuminated CMOS image sensor
    7.
    发明授权
    Backside illuminated CMOS image sensor 有权
    背面照明CMOS图像传感器

    公开(公告)号:US09123608B2

    公开(公告)日:2015-09-01

    申请号:US13416004

    申请日:2012-03-09

    IPC分类号: H01L21/00 H01L27/146

    摘要: A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.

    摘要翻译: 背面照明CMOS图像传感器包括使用前侧离子注入工艺和邻近光有源区形成的延伸的光有源区在衬底上形成的光有源区,其中扩展的光有源区通过使用背侧离子注入形成 处理。 背面照明的CMOS图像传感器还可以包括在衬底的背面上的激光退火层。 扩展的光有源区域有助于增加转换成电子的光子数量,以提高量子效率。

    Method for reducing cu surface defects following cu ECP
    8.
    发明授权
    Method for reducing cu surface defects following cu ECP 失效
    减少cu ECP后的cu表面缺陷的方法

    公开(公告)号:US06863796B2

    公开(公告)日:2005-03-08

    申请号:US10188689

    申请日:2002-07-02

    IPC分类号: C25D5/48

    CPC分类号: C25D5/48 Y10S134/902

    摘要: A method for cleaning an electrodeposition surface following an electroplating process including providing a process surface including electro-chemically deposited metal following an electrodeposition process; and, cleaning the process surface with a sulfuric acidic cleaning solution to remove electrodeposited metal particles according to at least one of an immersion and spraying process the spraying process including simultaneously rotating the process surface.

    摘要翻译: 一种用于在电镀工艺之后清洁电沉积表面的方法,包括在电沉积工艺之后提供包括电化学沉积金属的工艺表面; 并且用硫酸酸性清洁溶液清洗工艺表面以根据浸渍和喷涂工艺中的至少一个去除电沉积金属颗粒,所述喷涂工艺包括同时旋转工艺表面。