公开(公告)号：US20070032458A1

公开(公告)日：2007-02-08

申请号：US11476215

申请日：2006-06-28

申请人： Pann Suh ,  Sung Ryu ,  Sun Kim ,  Yun Kim

发明人： Pann Suh ,  Sung Ryu ,  Sun Kim ,  Yun Kim

IPC分类号： A61K31/655 ,  C07C245/02

CPC分类号： C07C245/08 ,  C07C275/40 ,  C07D231/14 ,  C07D333/38

摘要： Provided are a compound having an activity for inhibiting dioxin toxicity, a pharmaceutical composition including the compound and a method of treating disease resulting from dioxin toxicity using the compound. More particularly, the compound is represented by formula 1: where, R1 may be a hydrogen atom, a C1-C5 alkyl group or an alkylketone group; and R2 may be a hydrogen atom, a C1-C10 alkyl group or —COR3, wherein R3 may be a C1-C5 alkyl group, a C1-C5 alkylamide group, a C3-C12 aryl group or a heteroaryl group. A compound having an activity for inhibiting dioxin toxicity by directly antagonizing a dioxin receptor and specifically lessening dioxin-associated toxicity without an adverse effect resulting from an overdose of the compound or an outbreak of another disease can be obtained.

摘要翻译： 提供具有抑制二恶英毒性的活性的化合物，包含该化合物的药物组合物和使用该化合物治疗由二恶英毒性引起的疾病的方法。 更具体地，该化合物由式1表示：其中R 1可以是氢原子，C 1 -C 5烷基或烷基酮基团; 和R 2可以是氢原子，C 1 -C 10烷基或-COR 3 3，其中R 3可以是C 1 -C 5烷基，C 1 -C 5烷基酰胺 基团，C 3 -C 12芳基或杂芳基。 可以获得具有通过直接拮抗二恶英受体而抑制二恶英毒性的活性的化合物，并且具体地减少二恶英相关毒性，而不会由于过量的化合物引起的副作用或另一种疾病的爆发。

公开(公告)号：US20070017196A1

公开(公告)日：2007-01-25

申请号：US11487406

申请日：2006-07-17

申请人： Jong Choi ,  Young Kong ,  Hoon Ahn ,  Sun Kim ,  Seong Jung ,  Dae Han

发明人： Jong Choi ,  Young Kong ,  Hoon Ahn ,  Sun Kim ,  Seong Jung ,  Dae Han

IPC分类号： B01D46/00

CPC分类号： B01D46/527 ,  B01D39/2068 ,  B01D46/0001 ,  B01D2279/30

摘要： A ceramic filter and method for preparing the same. The method for preparing the ceramic filter according to the present invention is characterized in comprising the steps of: (a) coating firstly a ceramic green paper prepared by using a slurry solution comprising ceramic fiber of 0.1-10 length, with an aluminum silicate solution and drying the firstly coated paper; (b) coating secondly the dried ceramic green paper with an aluminum phosphate solution and drying the secondly coated paper; and (c) calcining the dried ceramic green paper obtained from the step (b). The ceramic filter according to the present invention has excellent mechanical strength since the bonding strength between ceramic fibers is very high, and shows good porosity, gas permeability, and efficiency for capturing microparticles since the pores between the ceramic fibers are less blocked, and thus can be very usefully applied to gas exhaustion system for automobile.

摘要翻译： 陶瓷过滤器及其制备方法。 根据本发明的陶瓷过滤器的制备方法的特征在于包括以下步骤：（a）首先涂覆通过使用包含0.1-10长度的陶瓷纤维的浆料溶液制备的陶瓷绿色纸与硅酸铝溶液和 干燥第一层涂布纸; （b）用磷酸铝溶液二次涂覆干燥的陶瓷绿纸，并干燥第二次涂布的纸; 和（c）煅烧由步骤（b）获得的干燥的陶瓷绿色纸。 本发明的陶瓷过滤器由于陶瓷纤维的接合强度非常高，因此陶瓷纤维之间的孔隙较少被堵塞，因此具有良好的孔隙率，透气性和捕捉微粒的效率，所以具有优良的机械强度， 非常有用地应用于汽车排气系统。

公开(公告)号：US20060222272A1

公开(公告)日：2006-10-05

申请号：US11254968

申请日：2005-10-21

申请人： Sun Kim

发明人： Sun Kim

IPC分类号： B65D33/00

CPC分类号： B65D75/66

摘要： A plastic film bag, including a seam welded part, a plastic film bag body part, and a tear tape to open the plastic film bag, is disclosed. In the plastic film bag, the tear tape is made of a monodirectionally oriented polypropylene film and is attached to an outer surface of the plastic film bag at a predetermined position between the seam welded part and the plastic film bag body part. Because the plastic film bag of the present invention is realized such that the tear tape is attached to the outer surface of the plastic film bag using an adhesive, the tear tape does not compromise the function of sealing the package, but allows the package to be completely sealed, unlike a conventional tear tape attached to the inner surface of a plastic film bag.

摘要翻译： 公开了一种塑料薄膜袋，包括缝焊部分，塑料薄膜袋体部分和撕开胶带以打开塑料薄膜袋。 在塑料薄膜袋中，撕带由单向取向的聚丙烯薄膜制成，并且在缝焊部与塑料薄膜袋主体部之间的预定位置附接到塑料薄膜袋的外表面。 因为本发明的塑料薄膜袋被实现为使用粘合剂将撕带附着在塑料薄膜袋的外表面上，所以撕带不影响密封包装的功能，而是使包装成为 完全密封，不同于附着在塑料薄膜袋的内表面上的常规撕带。

公开(公告)号：US20060203741A1

公开(公告)日：2006-09-14

申请号：US11299203

申请日：2005-12-09

申请人： Jeen Hur ,  Sun Kim ,  Byung Kim ,  Seong Park ,  Sang Han ,  Hoo Lee

发明人： Jeen Hur ,  Sun Kim ,  Byung Kim ,  Seong Park ,  Sang Han ,  Hoo Lee

IPC分类号： H04J1/16 ,  H04Q7/24

CPC分类号： H04W52/0293 ,  Y02D70/142 ,  Y02D70/144 ,  Y02D70/146

摘要： Provided is a wireless packet communication method, and more particularly, a method and apparatus for enabling low-power communication by providing separate driving clocks optimized for a lower part for performing the function of a physical layer part and an upper part for performing the function of an upper layer above the physical layer in a wireless packet communication system. The method includes a first clock providing step of measuring actual data transmission and reception rates at a predetermined period, setting up a frequency (F1) of a first clock based on the measured rates, and providing the first clock to the upper part and a second clock providing step of determining a transfer mode of the wireless packet communication system, detecting a frequency (F2) of a second clock selected according to the determined transfer mode, and providing the second clock to the lower part.

摘要翻译： 本发明提供一种无线分组通信方法，更具体地说，涉及一种能够实现低功率通信的方法和装置，该方法和装置通过提供针对下部优化的单独的驱动时钟，用于执行物理层部分和上部的功能，以执行功能 在无线分组通信系统中的物理层上方的上层。 该方法包括：第一时钟提供步骤，用于在预定时间段内测量实际数据发送和接收速率，基于测量的速率建立第一时钟的频率（F 1> 1），并且提供第一时钟 时钟到上半部分，以及第二时钟提供步骤，确定无线分组通信系统的传送模式，检测根据所确定的传送模式选择的第二时钟的频率（F 2> 2），以及 向下部提供第二个时钟。

公开(公告)号：US20060091376A1

公开(公告)日：2006-05-04

申请号：US11098802

申请日：2005-04-05

申请人： Sun Kim ,  Hyun Kim ,  Je Kim ,  In Choi ,  Kyu Lee ,  Jeong Oh

发明人： Sun Kim ,  Hyun Kim ,  Je Kim ,  In Choi ,  Kyu Lee ,  Jeong Oh

IPC分类号： H01L29/06

CPC分类号： H01L33/22

摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

公开(公告)号：US20060079073A1

公开(公告)日：2006-04-13

申请号：US11235278

申请日：2005-09-27

申请人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

发明人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

IPC分类号： H01L21/20

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

公开(公告)号：US20050179027A1

公开(公告)日：2005-08-18

申请号：US10890215

申请日：2004-07-14

申请人： Je Kim ,  Jeong Oh ,  Dong Kim ,  Sun Kim ,  Jin Park ,  Kyu Lee

发明人： Je Kim ,  Jeong Oh ,  Dong Kim ,  Sun Kim ,  Jin Park ,  Kyu Lee

IPC分类号： H01L29/06 ,  H01L33/06 ,  H01L33/32

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1−x1−y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1−AN (where 0

摘要翻译： 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0

公开(公告)号：US20050133812A1

公开(公告)日：2005-06-23

申请号：US10806432

申请日：2004-03-23

申请人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

发明人： Sun Kim ,  In Kim ,  Hun Hahm ,  Soo Lee ,  Dong Kim ,  Je Kim

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L29/225

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

公开(公告)号：US20130024878A1

公开(公告)日：2013-01-24

申请号：US13299516

申请日：2011-11-18

申请人： Yong Kwan Lee ,  Sun Kim ,  Dae Hyun Kwon ,  Hyun Su Kim

发明人： Yong Kwan Lee ,  Sun Kim ,  Dae Hyun Kwon ,  Hyun Su Kim

IPC分类号： G11B17/03

CPC分类号： G11B19/2009

摘要： Disclosed herein is a spindle motor including: a turn table made of a deformable iron based material; a turn table inner diameter part provided at the center of the turn table, having a hollow part, and including a coupling part formed in an inner peripheral surface thereof; and a shaft inserted into the hollow part of the turn table inner diameter part to thereby contact the coupling part and rotate in an axial direction.

摘要翻译： 本文公开了一种主轴电动机，包括：由可变形铁基材料制成的转台; 转台内径部分设置在转台的中心，具有中空部分，并且包括形成在其内周表面中的联接部分; 以及插入转台内径部分的中空部分中的轴，从而接触联接部并沿轴向旋转。

公开(公告)号：US20080001138A1

公开(公告)日：2008-01-03

申请号：US11380415

申请日：2006-04-26

申请人： Je Kim ,  Jeong Oh ,  Dong Kim ,  Sun Kim ,  Jin Park ,  Kyu Lee

发明人： Je Kim ,  Jeong Oh ,  Dong Kim ,  Sun Kim ,  Jin Park ,  Kyu Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0

摘要翻译： 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x In 1（1-x1-y1）构成的n型覆盖层， N（其中0 <= X 1 <= 1，0 <= Y 1 <= 1，AND 0 <= X 1 1-y2 N（其中0 <= Y2-2 <1）和由p型Al < （1-x3-y3）N（其中0