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1.发明申请公开(公告)号：US20060079073A1
公开(公告)日：2006-04-13
申请号：US11235278
申请日：2005-09-27
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。
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2.发明申请Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby 失效由此制造氮化物半导体的制造方法和氮化物半导体结构公开(公告)号：US20050133812A1
公开(公告)日：2005-06-23
申请号：US10806432
申请日：2004-03-23
IPC分类号： C30B25/02 , C30B29/40 , H01L21/20 , H01L21/205 , H01L29/225
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。
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公开(公告)号：US20050161683A1
公开(公告)日：2005-07-28
申请号：US11087680
申请日：2005-03-24
CPC分类号： H01L27/15 , H01L25/0753 , H01L27/153 , H01L33/44 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , Y10S257/918 , H01L2924/00014
摘要： Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.
摘要翻译： 公开了一种白色发光二极管及其制造方法。 白色发光二极管包括具有透光性的导电性基板，其表面被划分为第一和第二区域; 第一发光单元，其包括在导电基板的第一区域处的第一覆盖层，第一有源区和第二覆盖层; 第二发光单元，包括第三覆盖层，将具有与从第一有源区域发射的光合成的波长的光发射到白光的第二有源区，以及在导电基板的第二区域处的第四覆盖层; 以及第一，第二和第三电极，连接到导电衬底的第二表面的第一电极，连接到第二覆盖层的第二电极和连接到第四覆盖层的第三电极。
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公开(公告)号：US20060034097A1
公开(公告)日：2006-02-16
申请号：US10953816
申请日：2004-09-30
申请人： Hun Hahm , Jung Park , Young Jeong , Young Park , Hyung Kim , Ho Ahn
发明人： Hun Hahm , Jung Park , Young Jeong , Young Park , Hyung Kim , Ho Ahn
IPC分类号： F21V7/04
摘要： The present invention relates to an LED lens, in which a planar bottom has a pair of halves symmetrically connected with each other about a reference line and narrowed in the vicinity of the reference line. A pair of substantially semicircular reflecting surfaces are extended from both edges of the bottom connected with both ends of the reference line. A radiating surface is connected with remaining edges of the bottom and semicircular edges of the reflecting surfaces. The reflecting surfaces reflect light beams are introduced from the LED chip through the bottom toward the radiating surface. The radiating surface radiates the light beams to the outside when the light beams are introduced to the radiating surface through reflection from the reflecting surfaces and directly through the bottom, so that the light beams are radiated to the outside in a predetermined beam angle.
摘要翻译： 本发明涉及一种LED透镜，其中平面底部具有围绕参考线彼此对称连接并在基准线附近变窄的一对半部。 一对基本上半圆形的反射表面从与参考线的两端连接的底部的两个边缘延伸。 辐射表面与反射表面的底部和半圆形边缘的剩余边缘连接。 反射面反射光束从LED芯片通过底部朝向辐射表面引入。 当光束通过反射表面反射而直接通过底部将光束引入辐射表面时，辐射表面将光束照射到外部，使得光束以预定的光束角度辐射到外部。
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公开(公告)号：US20050072353A1
公开(公告)日：2005-04-07
申请号：US10837709
申请日：2004-05-04
申请人： Soo Min Lee , Hun Hahm , Young Park
发明人： Soo Min Lee , Hun Hahm , Young Park
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/40 , H01L21/20 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/40 , C30B25/02 , C30B25/20 , Y10S117/915
摘要： Disclosed herein is a method of manufacturing a gallium nitride-based (AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1, 0≦x+y≦1) single crystal substrate. The method comprises the steps of preparing a ZnO substrate, primarily growing a gallium nitride-based single crystal layer, and secondarily growing an additional gallium nitride-based single crystal layer on the primarily grown gallium nitride-based single crystal layer while removing the ZnO substrate by etching the underside of the ZnO substrate.
摘要翻译： 本文公开了一种制造氮化镓基（Al x In y Ga（1-xy）N）的方法，其中0 <= x <=1,0,0≤y≤1,0<= x + y <= 1）单晶 基质。 该方法包括以下步骤：制备ZnO衬底，主要生长氮化镓基单晶层，然后在主要生长的氮化镓基单晶层上再次生长附加的氮化镓基单晶层，同时去除ZnO衬底 通过蚀刻ZnO衬底的下侧。
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公开(公告)号：US20070176198A1
公开(公告)日：2007-08-02
申请号：US11709154
申请日：2007-02-22
CPC分类号： H01L33/62 , F21K9/00 , H01L33/60 , H01L2224/48091 , H01L2224/48227 , H01L2924/01078 , H01L2924/01079 , H05K1/021 , H05K3/244 , H05K2201/09827 , H05K2201/09981 , H05K2201/10106 , H05K2201/2054 , H01L2924/00014
摘要： A Chip on Board (COB) package which can reduce the manufacturing costs by using a general PCB as a substrate, increase a heat radiation effect from a light source, thereby realizing a high quality light source at low costs, and a manufacturing method thereof. The COB package includes a board-like substrate with a circuit printed on a surface thereof, the substrate having a through hole. The package also includes a light source positioned in the through hole and including a submount and a dome structure made of resin, covering and fixing the light source to the substrate. The invention allows a good heat radiation effect by using the general PCB as the substrate, enabling manufacture of a high quality COB package at low costs. This in turn improves emission efficiency of the light source, ultimately realizing a high quality light source.
摘要翻译： 通过使用通用PCB作为基板可以降低制造成本的芯片上（COB）封装，增加了来自光源的散热效果，从而以低成本实现高质量的光源及其制造方法。 COB封装包括具有印刷在其表面上的电路的板状衬底，该衬底具有通孔。 封装还包括位于通孔中的光源，并且包括底座和由树脂制成的圆顶结构，将光源覆盖并固定到基板。 本发明通过使用通用PCB作为基板来实现良好的散热效果，能够以低成本制造高质量的COB封装。 这又提高了光源的发光效率，最终实现了高质量的光源。
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公开(公告)号：US20060169999A1
公开(公告)日：2006-08-03
申请号：US11319101
申请日：2005-12-28
申请人： Young Park , Seung Lee , Hun Hahm , Hyung Kim , Bum Kim , Young Jeong , Ho Ahn , Jung Park
发明人： Young Park , Seung Lee , Hun Hahm , Hyung Kim , Bum Kim , Young Jeong , Ho Ahn , Jung Park
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/60 , H01L33/642 , H01L33/647 , H01L2224/48091 , H01L2224/48247 , H01L2924/01079 , H01L2924/12041 , H01L2924/00014
摘要： The invention relates to an LED package frame and an LED package incorporating the same. The LED package frame comprises an LED chip; and a heat conductive member made of a lump of high heat conductivity material. The heat conductive member has a receiving part at a lateral portion, and is mounted with the LED chip. A lead is inserted at one end into the receiving part of the heat conductive member, and electrically connected to the LED chip. An electrically insulating layer is placed in tight contact between the lead and the receiving part of the heat conductive member to separate the lead from the receiving part. With the lead inserted into the heat conductive member, it is possible to reduce size while maintaining high heat conductivity and stability. Also, it is possible to provide an LED package frame and a high power LED package by fixing the lead fixed to the heat conductive member without a jig.
摘要翻译： 本发明涉及一种LED封装框架和一个包含该LED封装框架的LED封装件。 LED封装框架包括LED芯片; 以及由高导热性材料块制成的导热构件。 导热构件在侧部具有接收部，并且安装有LED芯片。 引线一端插入导热部件的接收部分，并与LED芯片电连接。 电绝缘层被放置在引导件和导热构件的接收部分之间的紧密接触中以将引线与接收部分分离。 通过将导线插入导热构件，可以在保持高导热性和稳定性的同时减小尺寸。 此外，通过将固定在导热构件上的引线固定而不用夹具，可以提供LED封装框架和大功率LED封装。
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公开(公告)号：US20060034082A1
公开(公告)日：2006-02-16
申请号：US10957650
申请日：2004-10-05
申请人： Jung Park , Young Park , Hun Hahm , Young Jeong , Hyung Kim
发明人： Jung Park , Young Park , Hun Hahm , Young Jeong , Hyung Kim
IPC分类号： F21V13/04
CPC分类号： H01L33/58 , G02F1/133603 , H01L33/54 , Y10S362/80
摘要： The present invention relates to a multi-lens LED. The LED has multiple lenses and an intermediate layer interposed between the multiple lenses in order to radiate light emitted from an LED chip in a desired direction and/or beam angle without using a complicated lens configuration. The first lens is centered behind the LED chip when seen in the propagation direction of light, the second lens has a concave structure and surrounds the first lens, and the intermediate layer is interposed between the first and second lenses, so that light emitted from the LED chip can be radiated in a wide beam angle. When provided in the form of a hemisphere, the multi-lens LED can be attached to a wall or a ceiling in use for interior lighting. On the other hand, when provided in the form of a cylinder, the multi-lens LED of the invention can be applied in arrays to be used as a light source of an LCD backlight apparatus.
摘要翻译： 本发明涉及一种多透镜LED。 LED具有多个透镜和介于多个透镜之间的中间层，以便在不需要复杂透镜配置的情况下以期望的方向和/或光束角辐射从LED芯片发射的光。 当在光的传播方向上观察时，第一透镜位于LED芯片的后面，第二透镜具有凹形结构并且围绕第一透镜，并且中间层插入在第一透镜和第二透镜之间，使得从 LED芯片可以以较宽的光束角度辐射。 当以半球的形式提供时，多透镜LED可以附着在用于室内照明的墙壁或天花板上。 另一方面，当以圆筒形式提供时，本发明的多透镜LED可以应用于阵列以用作LCD背光装置的光源。
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公开(公告)号：US20060006406A1
公开(公告)日：2006-01-12
申请号：US10967212
申请日：2004-10-19
申请人： Hyung Kim , Young Park , Hun Hahm , Jung Park , Young Jeong
发明人： Hyung Kim , Young Park , Hun Hahm , Jung Park , Young Jeong
IPC分类号： H01L29/24
CPC分类号： H01L25/0753 , H01L2924/0002 , H01L2924/00
摘要： An LED package comprises a substrate, one or three terminals formed on a first side of the substrate, three terminals formed on a second side opposite to the first side, and two or three LEDs disposed on the substrate, one of the LEDS being electrically connected to one of the terminals formed on the first side while being electrically connected to one of the terminals formed on the second side, and other LEDS being electrically connected to two terminals formed on the first side or to two terminals formed on the second side. A light source comprises the LED packages having the structure as described above. Without being arranged in a line, the LEDs emitting the same color are differently arranged in every LED package, thereby solving the problem of non-uniform combination of the colors according to the positions of the LEDs on an LED package-mounting substrate.
摘要翻译： LED封装包括基板，形成在基板的第一侧上的一个或三个端子，形成在与第一侧相对的第二侧上的三个端子和设置在基板上的两个或三个LED，其中一个LED电连接 连接到形成在第一侧上的端子中的一个端子，同时电连接到形成在第二侧上的端子之一，并且其它LEDS电连接到形成在第一侧上的两个端子或形成在第二侧上的两个端子。 光源包括具有如上所述结构的LED封装。 不排列成一行，发光相同颜色的LED在每个LED封装中被不同地排列，从而解决了根据LED封装安装基板上LED的位置的颜色不均匀组合的问题。
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10.发明申请公开(公告)号：US20060001034A1
公开(公告)日：2006-01-05
申请号：US10959154
申请日：2004-10-07
申请人： Young Park , Hun Hahm , Hyung Kim , Jung Park , Young Jeong
发明人： Young Park , Hun Hahm , Hyung Kim , Jung Park , Young Jeong
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/56 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Disclosed is an RGB light emitting diode package with improved color mixing properties. The RGB light emitting diode package includes red, green, and blue light emitting diode chips provided on a reflector, on which elements are to be installed or mounted. A photomixing material and a filler resin scatters rays so as to uniformly mix the rays emitted from the light emitting diode chips. The photomixing material and filler resin are applied onto upper sides of the light emitting diode chips while being mixed with each other, and the photomixing material is uniformly dispersed in the filler resin. The RGB light emitting diode package according to the present invention is advantageous in that since it has excellent color mixing properties in a relatively small area, it is possible to achieve slimness of the package, while it is difficult to design a slim package using a conventional process in which there is a limit that an area large enough to mix colors must be provided.
摘要翻译： 公开了具有改进的混色特性的RGB发光二极管封装。 RGB发光二极管封装包括设置在要安装或安装元件的反射器上的红色，绿色和蓝色发光二极管芯片。 光混合材料和填充树脂散射射线，以均匀混合从发光二极管芯片发出的光线。 将光混合材料和填料树脂彼此混合地施加到发光二极管芯片的上侧，并且光混合材料均匀地分散在填充树脂中。 根据本发明的RGB发光二极管封装的优点在于，由于它在相对较小的区域中具有优异的混色特性，所以可以实现封装的薄型化，同时难以使用常规的方法来设计纤薄封装 必须提供足够大的混合颜色的区域的限制。
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