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公开(公告)号：US20160087052A1
公开(公告)日：2016-03-24
申请号：US14810933
申请日：2015-07-28
IPC分类号： H01L29/417 , H01L29/78 , H01L23/535 , H01L29/778 , H01L29/20 , H01L29/06
CPC分类号： H01L29/41758 , H01L23/481 , H01L23/485 , H01L23/5222 , H01L23/5283 , H01L23/535 , H01L27/0605 , H01L29/0649 , H01L29/0696 , H01L29/2003 , H01L29/4175 , H01L29/7786 , H01L29/7787 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to an embodiment includes a nitride semiconductor layer, a plurality of source electrodes provided on the nitride semiconductor layer, a plurality of drain electrodes, a plurality of gate electrodes, a first interconnection having a first distance from the nitride semiconductor layer and electrically connecting the source electrodes, a second interconnection electrically connecting the gate electrodes, and a third interconnection having a third distance from the nitride semiconductor layer and electrically connecting the drain electrodes. Each of the drain electrodes are provided between the source electrodes. Each of the gate electrodes are provided between each of the source electrodes and each of the drain electrodes. The third distance is larger than the first distance.
摘要翻译： 根据实施例的半导体器件包括氮化物半导体层，设置在氮化物半导体层上的多个源电极，多个漏电极，多个栅电极，与氮化物半导体层具有第一距离的第一互连和 电连接源电极，电连接栅电极的第二互连线和与氮化物半导体层具有第三距离并电连接漏电极的第三互连。 每个漏电极设置在源电极之间。 每个栅电极设置在每个源电极和每个漏电极之间。 第三距离大于第一距离。
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公开(公告)号：US11757028B2
公开(公告)日：2023-09-12
申请号：US17559148
申请日：2021-12-22
IPC分类号： H01L29/778 , H01L21/02 , H01L21/28 , H01L29/423 , H01L29/205 , H01L29/20 , H01L29/51 , H01L29/66
CPC分类号： H01L29/7787 , H01L21/02458 , H01L21/28264 , H01L29/2003 , H01L29/205 , H01L29/42356 , H01L29/42368 , H01L29/42376 , H01L29/513 , H01L29/518 , H01L29/66462 , H01L21/02241 , H01L21/02326
摘要： According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor layers, a nitride layer, and an oxide layer. A direction from the second electrode toward the first electrode is aligned with a first direction. A position in the first direction of the third electrode is between the first electrode and the second electrode in the first direction. The first semiconductor layer includes first to fifth partial regions. The first partial region is between the fourth and third partial regions in the first direction. The second partial region is between the third and fifth partial regions in the first direction. The nitride layer includes first and second nitride regions. The second semiconductor layer includes first and second semiconductor regions. The oxide layer includes silicon and oxygen. The oxide layer includes first to third oxide regions.
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公开(公告)号：US11658235B2
公开(公告)日：2023-05-23
申请号：US15901171
申请日：2018-02-21
发明人： Masahiko Kuraguchi , Yosuke Kajiwara , Miki Yumoto , Hiroshi Ono
IPC分类号： H01L29/778 , H01L29/423 , H01L29/66 , H01L23/528 , H01L23/522 , H01L29/417 , H01L23/482 , H01L29/45 , H01L29/20
CPC分类号： H01L29/7787 , H01L23/4824 , H01L23/5226 , H01L23/5286 , H01L29/41758 , H01L29/4238 , H01L29/42376 , H01L29/66462 , H01L29/66522 , H01L29/7783 , H01L29/7786 , H01L29/2003 , H01L29/4236 , H01L29/452
摘要： According to one embodiment, a semiconductor device includes a first electrode, a first region, and a first insulating layer. The first electrode includes a first electrode portion. The first region contains Ga and N. The first region includes a first subregion, a second subregion, and a third subregion. The first subregion and the third subregion contain at least one first element selected from the group consisting of Ar, B, P, N, and Fe. The first subregion is located between the first electrode portion and the second subregion in a first direction. The second subregion does not contain the first element, or concentration of the first element in the second subregion is lower than concentration of the first element in the first subregion and lower than concentration of the first element in the third subregion. The first insulating layer is provided between the first electrode and the first region.
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公开(公告)号：US11476336B2
公开(公告)日：2022-10-18
申请号：US16787351
申请日：2020-02-11
发明人： Hiroshi Ono , Akira Mukai , Yosuke Kajiwara , Daimotsu Kato , Aya Shindome , Masahiko Kuraguchi
IPC分类号： H01L29/778 , H01L29/205 , H01L29/207 , H01L29/20 , H01L23/29 , H01L29/423 , H01L29/51 , H01L29/40
摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, and a first compound member. A position of the third electrode is between a position of the second electrode and a position of the first electrode. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the third and first partial regions. The fifth partial region is between the second and third partial regions. The second semiconductor layer includes first, second, and third semiconductor regions. The third semiconductor region is between the first partial region and the first electrode. The first compound member includes first compound portions between the third semiconductor region and the first electrode. A portion of the first electrode is between one of the first compound portions and an other one of the first compound portions.
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公开(公告)号：US11329135B2
公开(公告)日：2022-05-10
申请号：US17013959
申请日：2020-09-08
发明人： Yosuke Kajiwara , Masahiko Kuraguchi , Akira Mukai
IPC分类号： H01L29/51 , H01L29/20 , H01L29/47 , H01L29/778 , H01L29/40 , H01L29/417 , H01L29/423
摘要： According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, first and second insulating members, and a first member. The third electrode includes a first electrode portion. The first electrode portion is between the first and second electrodes. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The first insulating member includes first and second insulating regions. The second insulating member includes first and second insulating portions. The first insulating portion is between the fourth partial region and the first insulating region. The second insulating portion is between the fifth partial region and the second insulating region. The second semiconductor layer includes first, second, and third semiconductor portions.
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公开(公告)号：US11251293B2
公开(公告)日：2022-02-15
申请号：US16802315
申请日：2020-02-26
发明人： Yosuke Kajiwara , Hiroshi Ono , Jumpei Tajima , Toshiki Hikosaka , Shinya Nunoue , Masahiko Kuraguchi
IPC分类号： H01L29/778 , H01L29/20 , H01L29/205 , H01L29/207 , H01L29/423 , H01L29/36 , H01L29/51 , H01L29/417 , H01L29/06
摘要： According to one embodiment, a semiconductor device includes first to fourth semiconductor regions, and an insulating part. The third electrode is between the first and second electrodes in a first direction from the first electrode toward the second electrode. The first semiconductor region includes Alx1Ga1-x1N and includes first to fifth partial regions. A second direction from the first partial region toward the first electrode crosses the first direction. The second semiconductor region includes Alx2Ga1-x2N and includes sixth and seventh partial regions. The third semiconductor region includes Alx3Ga1-x3N and includes an eighth partial region between the fifth and seventh partial regions. The fourth semiconductor region includes Alx4Ga1-x4N and includes a first portion between the fifth and eighth partial regions. The fourth semiconductor region includes a first element not included the first to third semiconductor regions. The insulating part includes first to third insulating regions.
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公开(公告)号：US11211463B2
公开(公告)日：2021-12-28
申请号：US16799953
申请日：2020-02-25
IPC分类号： H01L29/423 , H01L29/739 , H01L29/778
摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes Alx1Ga1-x1N and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes Alx2Ga1-x2N. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.
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公开(公告)号：US11152480B2
公开(公告)日：2021-10-19
申请号：US16799918
申请日：2020-02-25
发明人： Aya Shindome , Masahiko Kuraguchi
IPC分类号： H01L29/51 , H01L29/778 , H01L29/423 , H01L29/40
摘要： According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first conductive member, a first semiconductor layer, a second semiconductor layer, and an insulating member. The third electrode is between the first electrode and the second electrode. The first conductive member is electrically connected to the first electrode. The first conductive member is between the third electrode and the second electrode. The first semiconductor layer includes Alx1Ga1−x1N and includes first, second, third, fourth, and fifth partial regions. The second semiconductor layer includes Alx2Ga1−x2N and includes a first semiconductor region and a second semiconductor region. The insulating member includes first, second, third, fourth, and fifth insulating regions. The first insulating region is between the third partial region and the third electrode. The second insulating region is between the fifth partial region and the first conductive member.
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公开(公告)号：US11043452B2
公开(公告)日：2021-06-22
申请号：US16802295
申请日：2020-02-26
IPC分类号： H01L23/528 , H01L29/423 , H01L23/52 , H01L29/20 , H01L23/31 , H01L23/535 , H01L29/417 , H01L29/10 , H01L29/40 , H01L29/778
摘要： According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor layer, a first extension conductive layer, first and second electrode connection portions, and an insulating member. The first to fourth electrodes extend along a first direction. The first electrode is between the second and third electrodes in a second direction. The second direction crosses the first direction. The first extension conductive layer extends along the first direction and is electrically connected to the first electrode. The fourth electrode is between the first and third electrodes in the second direction. The first electrode connection portion is electrically connected to the first electrode. The second electrode connection portion is electrically connected to the second and fourth electrodes. The insulating member includes a first insulating portion. The first insulating portion is between the second electrode connection portion and a portion of the first electrode.
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公开(公告)号：US20200220002A1
公开(公告)日：2020-07-09
申请号：US16565715
申请日：2019-09-10
发明人： Aya SHINDOME , Masahiko Kuraguchi
IPC分类号： H01L29/778 , H01L29/20 , H01L29/06
摘要： According to one embodiment, a semiconductor device includes a first electrode extending along a first direction, a second electrode including a portion extending along the first direction, a third electrode extending along the first direction, a first member, first and second semiconductor regions, and a conductive portion. A position of the second electrode in a second direction is between the third electrode and the first electrode in the second direction crossing the first direction. A distance along the second direction between the third and second electrodes is shorter than a distance along the second direction between the second and first electrodes. The first member includes first and second regions. A conductivity of the second region is lower than a conductivity of the first region. The first semiconductor region includes Alx1Ga1-x1N. The second semiconductor region includes Alx2Ga1-x2N. A conductive portion is electrically connected to the first electrode.
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