公开(公告)号：US10044166B2

公开(公告)日：2018-08-07

申请号：US15335266

申请日：2016-10-26

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Xiaoxu Lu ,  John Fielden

IPC: H01S3/109 ,  G02F1/355 ,  H01S3/00 ,  G02F1/35

Abstract: A deep ultra-violet (DUV) continuous wave (CW) laser includes a fundamental CW laser configured to generate a fundamental frequency with a corresponding wavelength between about 1 μm and 1.1 μm, a third harmonic generator module including one or more non-linear optical (NLO) crystals that generate a third harmonic and an optional second harmonic, and a fifth harmonic generator. The fifth harmonic generator module includes a cavity resonant at the fundamental frequency, and combines the fundamental frequency with the third harmonic in a first NLO crystal to generate a fourth harmonic, then combines the fourth harmonic with unconsumed fundamental frequency in a second NLO crystal to generate the fifth harmonic. One or more lenses are used to focus the third and fourth harmonics in the first and second NLO crystals, respectively.

公开(公告)号：US20180114687A1

公开(公告)日：2018-04-26

申请号：US15842540

申请日：2017-12-14

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Xiaoxu Lu ,  Justin Liou ,  John Fielden

IPC: H01J61/02 ,  H01J61/16 ,  H01J61/20 ,  H05H1/24

CPC classification number: H01J61/025 ,  H01J61/125 ,  H01J61/16 ,  H01J61/20 ,  H01J61/54 ,  H01J65/04 ,  H05H1/24

Abstract: A high brightness laser-sustained broadband light source includes a gas containment structure and a pump laser configured to generate a pump beam including illumination of a wavelength at least proximate to a weak absorption line of a neutral gas contained in the gas containment structure. The broadband light source includes one or more anamorphic illumination optics configured to focus the pump beam into an approximately elliptical beam waist positioned in or proximate to the center of the gas containment structure. The broadband light source includes one or more first collection optics configured to collect broadband radiation emitted by the plasma in a direction substantially aligned with a longer axis of the elliptical beam waist.

公开(公告)号：US20180047857A1

公开(公告)日：2018-02-15

申请号：US15797970

申请日：2017-10-30

Applicant: KLA-Tencor Corporation

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: H01L31/0216 ,  G01N21/95 ,  G01N21/956 ,  H01L27/146 ,  G01N21/88

CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

公开(公告)号：US09865447B2

公开(公告)日：2018-01-09

申请号：US15285333

申请日：2016-10-04

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Xiaoxu Lu ,  Justin Liou ,  John Fielden

IPC: H01J61/16 ,  H01L21/48 ,  H01J61/02 ,  H01J61/20 ,  H05H1/24

CPC classification number: H01J61/025 ,  H01J61/125 ,  H01J61/16 ,  H01J61/20 ,  H01J61/54 ,  H01J65/04 ,  H05H1/24

Abstract: The broadband light source includes a gas containment structure and a pump laser for generating a pump beam including illumination of a wavelength near that of a weak absorption line of a neutral gas contained in the gas containment structure. The broadband light source also includes anamorphic optics for focusing the pump beam into an elliptical beam waist positioned in or near the center of the gas containment structure. The broadband light source also includes collection optics for collecting broadband radiation emitted by the plasma in a direction aligned with a longer axis of the elliptical beam waist.

公开(公告)号：US20170338257A1

公开(公告)日：2017-11-23

申请号：US15668776

申请日：2017-08-04

Applicant: KLA-Tencor Corporation ,  Hmamatsu Photonics K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Jehn-Huar Chern ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Venkatraman Iyer

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

公开(公告)号：US09767986B2

公开(公告)日：2017-09-19

申请号：US14834991

申请日：2015-08-25

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Marcel Trimpl ,  Jingjing Zhang ,  Devis Contarato ,  Venkatraman Iyer

IPC: H01J37/244 ,  H01J37/28 ,  H01L31/00 ,  G01T1/24

CPC classification number: G01N30/72 ,  G01T1/24 ,  G06F19/00 ,  H01J37/244 ,  H01J37/28 ,  H01J49/02 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/24475 ,  H01J2237/24495 ,  H01J2237/24592 ,  H01L27/1464 ,  H01L27/14659 ,  H01L27/14661 ,  H01L31/00

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

公开(公告)号：US09748294B2

公开(公告)日：2017-08-29

申请号：US14591325

申请日：2015-01-07

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Jehn-Huar Chem ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Venkatraman Iyer

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

公开(公告)号：US09608399B2

公开(公告)日：2017-03-28

申请号：US14210355

申请日：2014-03-13

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong ,  Justin Dianhuan Liou ,  Vladimir Dribinski ,  John Fielden

IPC: H01S3/23 ,  G01N21/47 ,  G01N21/95 ,  H01S3/30 ,  G02F1/35 ,  G01N21/88 ,  H01S3/06 ,  H01S3/067 ,  H01S3/0941 ,  H01S3/16 ,  H01S3/00

CPC classification number: H01S3/2308 ,  G01N21/47 ,  G01N21/8806 ,  G01N21/9501 ,  G02F1/353 ,  G02F2001/3507 ,  G02F2001/354 ,  H01S3/0078 ,  H01S3/0092 ,  H01S3/0602 ,  H01S3/06708 ,  H01S3/06758 ,  H01S3/09415 ,  H01S3/1618 ,  H01S3/2375 ,  H01S3/302

Abstract: An improved laser uses a pump laser with a wavelength near 1109 nm and a fundamental wavelength near 1171 nm to generate light at a wavelength between approximately 189 nm and approximately 200 nm, e.g. 193 nm. The laser mixes the 1109 nm pump wavelength with the 5th harmonic of the 1171 nm fundamental, which is at a wavelength of approximately 234.2 nm. By proper selection of non-linear media, such mixing can be achieved by nearly non-critical phase matching. This mixing results in high conversion efficiency, good stability, and high reliability.

公开(公告)号：US09509112B2

公开(公告)日：2016-11-29

申请号：US14294019

申请日：2014-06-02

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  Xiaoxu Lu ,  John Fielden

IPC: H01S3/109 ,  H01S3/00 ,  G02F1/355 ,  G02F1/35

CPC classification number: H01S3/109 ,  G02F1/353 ,  G02F1/3534 ,  G02F1/3558 ,  G02F2001/3507 ,  G02F2001/354 ,  G02F2201/17 ,  G02F2203/15 ,  H01S3/0092

Abstract: A deep ultra-violet (DUV) continuous wave (CW) laser includes a fundamental CW laser configured to generate a fundamental frequency with a corresponding wavelength between about 1 μm and 1.1 μm, a third harmonic generator module including one or more periodically poled non-linear optical (NLO) crystals that generate a third harmonic and an optional second harmonic, and one of a fourth harmonic generator module and a fifth harmonic generator. The fourth harmonic generator module includes a cavity resonant at the fundamental frequency configured to combine the fundamental frequency with the third harmonic to generate a fourth harmonic. The fourth harmonic generator module includes either a cavity resonant at the fundamental frequency for combining the fundamental frequency with the third harmonic to generate a fifth harmonic, or a cavity resonant at the second harmonic frequency for combining the second harmonic and the third harmonic to generate the fifth harmonic.

Abstract translation: 深紫外（DUV）连续波（CW）激光器包括配置为产生具有在约1μm和1.1μm之间的相应波长的基频的基本CW激光器;三次谐波发生器模块，包括一个或多个周期性极化非线性 产生三次谐波和可选的二次谐波的线性光学（NLO）晶体，以及四次谐波发生器模块和五次谐波发生器之一。 第四谐波发生器模块包括在基频处谐振的腔体，其被配置为将基频与三次谐波组合以产生第四谐波。 第四谐波发生器模块包括在基频处共振的腔体，用于将基频与三次谐波组合以产生五次谐波，或者在二次谐波频率下共振谐振以组合二次谐波和三次谐波，以产生 五次谐波。

公开(公告)号：US20160343532A1

公开(公告)日：2016-11-24

申请号：US15160505

申请日：2016-05-20

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  Yinying Xiao-Li ,  Xuefeng Liu

IPC: H01J1/308 ,  H01L31/107 ,  H01J37/22 ,  H01L27/148 ,  H01J1/304 ,  H01J1/34 ,  H01L31/105 ,  H01L31/0216

Abstract: A photocathode utilizes an field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emissions, and a thin boron layer disposed directly on the output surface of the FEA to prevent oxidation. The field emitters are formed by protrusions having various shapes (e.g., pyramids or rounded whiskers) disposed in a two-dimensional periodic pattern, and may be configured to operate in a reverse bias mode. An optional gate layer is provided to control emission currents. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer. An optional external potential is generated between the opposing illuminated and output surfaces. An optional combination of n-type silicon field emitter and p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photocathode forms part of sensor and inspection systems.

Abstract translation: 光电阴极利用整体形成在硅衬底上的场致发射阵列（FEA）来增强光电子发射，以及直接设置在FEA的输出表面上以防止氧化的薄硼层。 场发射体由具有以二维周期图案设置的各种形状（例如，金字塔或圆形晶须）的突起形成，并且可以被配置为以反向偏压模式操作。 提供可选的栅极层以控制发射电流。 在照明（顶部）表面上形成可选的第二硼层，并且在第二硼层上形成任选的抗反射材料层。 在相对的照明​​和输出表面之间产生可选的外部电位。 通过特殊的掺杂方案和施加外部电位形成n型硅场致发射体和p-i-n光电二极管膜的可选组合。 光电阴极形成传感器和检测系统的一部分。