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    Magnetoresistive effect element, magnetic head, magnetic reproducing apparatus, and manufacturing method thereof
    31.
    发明申请
    Magnetoresistive effect element, magnetic head, magnetic reproducing apparatus, and manufacturing method thereof 审中-公开
    磁阻效应元件，磁头，磁再生装置及其制造方法

    公开(公告)号：US20080013218A1

    公开(公告)日：2008-01-17

    申请号：US11822700

    申请日：2007-07-09

    申请人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masaaki Doi ,  Kousaku Miyake

    发明人： Hiromi Fuke ,  Susumu Hashimoto ,  Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Masaaki Doi ,  Kousaku Miyake

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3929 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3163 ,  G11B2005/3996 ,  H01L43/08

    摘要： A magnetoresistive effect element, includes: a magnetoresistive effect film including: a magnetization fixed layer having a first ferromagnetic film of which magnetization direction is practically fixed in one direction; a magnetization free layer having a second ferromagnetic film of which magnetization direction changes with corresponding to an external magnetic field; and a spacer layer disposed between the magnetization fixed layer and magnetization free layer, and having an insulating layer and a ferromagnetic metal portion penetrating through the insulating layer; a pair of electrodes applying a sense current in a perpendicular direction relative to a film surface of the magnetoresistive effect film; and a layer containing a non-ferromagnetic element disposed at least one of an inside of the magnetization fixed layer-and an inside of the magnetization free layer.

    摘要翻译： 一种磁阻效应元件，包括：磁阻效应膜，包括：具有第一铁磁性膜的磁化固定层，其磁化方向实际上在一个方向上固定; 磁化自由层，具有磁化方向相应于外部磁场而变化的第二铁磁性膜; 以及设置在所述磁化固定层和磁化自由层之间并具有贯穿所述绝缘层的绝缘层和强磁性金属部分的间隔层; 一对电极相对于磁阻效应膜的膜表面在垂直方向施加感测电流; 以及包含设置在磁化固定层的内部和磁化自由层的内部中的至少一个的非铁磁性元件的层。

    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY
    33.
    发明申请
    MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY 有权
    磁阻效应元件，磁头，磁力再生装置和磁记忆

    公开(公告)号：US20070081276A1

    公开(公告)日：2007-04-12

    申请号：US11609557

    申请日：2006-12-12

    申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11C11/16 ,  G11C11/161 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1121

    摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.

    摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。

    Magnetoresistive element in which pinned magnetization layers have antiparallel pinned directions, magnetic head and magnetic recording/reproducing apparatus
    35.
    发明授权
    Magnetoresistive element in which pinned magnetization layers have antiparallel pinned directions, magnetic head and magnetic recording/reproducing apparatus 有权
    其中钉扎磁化层具有反平行的钉扎方向，磁头和磁记录/再现装置的磁阻元件

    公开(公告)号：US07116529B2

    公开(公告)日：2006-10-03

    申请号：US10654988

    申请日：2003-09-05

    申请人： Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi

    发明人： Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3906 ,  G11B5/3954 ,  G11B2005/3996

    摘要： A magnetoresistive element has a magnetoresistive film and a pair of electrodes adapted to flow a sense current in a direction substantially perpendicular to a plane of the magnetoresistive film. The magnetoresistive film includes first and second magnetization free layers and first to fourth magnetization pinned layers with nonmagnetic intermediate layers interposed therebetween. The second magnetization pinned layer and the third magnetization pinned layer are formed between the second nonmagnetic intermediate layer and the third nonmagnetic intermediate layer. The directions of magnetization of the first and second magnetization pinned layers are substantially parallel to each other. The directions of magnetization of the third and fourth magnetization pinned layers are substantially parallel to each other. Further, the direction of magnetization of the second magnetization pinned layer is substantially antiparallel to the direction of magnetization of the third magnetization pinned layer.

    摘要翻译： 磁阻元件具有磁阻膜和一对电极，其适于在基本上垂直于磁阻膜的平面的方向上流动感测电流。 磁阻膜包括第一和第二磁化自由层和介于其间的非磁性中间层的第一至第四磁化固定层。 第二磁化被钉扎层和第三磁化被钉扎层形成在第二非磁性中间层和第三非磁性中间层之间。 第一和第二磁化固定层的磁化方向基本上彼此平行。 第三和第四磁化被钉扎层的磁化方向基本上彼此平行。 此外，第二磁化被钉扎层的磁化方向与第三磁化固定层的磁化方向基本上反平行。