公开(公告)号：US06391233B1

公开(公告)日：2002-05-21

申请号：US09597296

申请日：2000-06-20

Applicant: Kunihiko Otani ,  Mizuho Maeda ,  Hideo Takamatsu ,  Kazuhisa Takagi ,  Masashi Nemoto

Inventor： Kunihiko Otani ,  Mizuho Maeda ,  Hideo Takamatsu ,  Kazuhisa Takagi ,  Masashi Nemoto

IPC: B29C6720

CPC classification number: B29C67/202

Abstract: A novel method of producing a porous product is provided, including the steps of: preparing a molded product by subjecting a molding material comprising a polymer component and a pore-forming agent dispersed in the polymer component, the pore-forming agent assuming a solid state at a room temperature, to molding at a temperature which causes the pore-forming agent to melt; and soaking the molded product with a solvent which dissolves the pore-forming agent but fails to dissolve the polymer component, to form pores.

Abstract translation: 提供一种生产多孔产品的新方法，包括以下步骤：通过使分散在聚合物组分中的聚合物组分和成孔剂的成型材料，使固体状态的成孔剂 在室温下在使成孔剂熔化的温度下成型; 并用溶解成孔剂的溶剂浸渍成型体，但不能溶解聚合物成分，形成孔。

公开(公告)号：US06319425B1

公开(公告)日：2001-11-20

申请号：US09499345

申请日：2000-02-08

Applicant: Masutsugu Tasaki ,  Akira Ichikawa ,  Tsutomu Odaki ,  Kazuhisa Takagi

Inventor： Masutsugu Tasaki ,  Akira Ichikawa ,  Tsutomu Odaki ,  Kazuhisa Takagi

IPC: H01L3300

CPC classification number: H01L33/507 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: This invention relates to a transparent coating member mountable on a light-emitting diode including a fluorescent substance and a light diffusion substance including calcium carbonate in order to reduce color variation at various locations of a transparent coating member and also reduce manufacturing costs of the transparent coating member without significantly lower the level of chromaticity. Furthermore, this invention relates to a transparent coating member mountable on a light-emitting diode (LED) including a fluorescent substance and a light storing pigment. This structure allows an exhibition of afterglow of the transparent coating member after turning off the light in a room so that locating the position of the transparent coating member is made easier thereafter. The light diffusion substance and the light storing pigment can be added to the transparent coating member to acquire both advantages derived from respective substances.

Abstract translation: 本发明涉及一种透明涂层构件，其可安装在包括荧光物质的发光二极管和包含碳酸钙的光漫射物质的发光二极管上，以减少透明涂层构件的各个位置的颜色变化，并且还降低了透明涂层的制造成本 成员没有显着降低色度水平。 此外，本发明涉及一种可安装在包括荧光物质和光存储颜料的发光二极管（LED）上的透明涂层部件。 这种结构允许在关闭房间中的光之后展现透明涂层构件的余辉，从而使透明涂层构件的位置稍后更容易。 光扩散物质和光存储颜料可以添加到透明涂层构件中，以获得从各种物质衍生的两个优点。

公开(公告)号：US5684816A

公开(公告)日：1997-11-04

申请号：US588089

申请日：1996-01-18

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/02 ,  H01S5/042 ,  H01S5/12 ,  H01S3/19 ,  H01S3/00 ,  H01S3/097

CPC classification number: H01S5/0425 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01S5/02276 ,  H01S5/1228 ,  H01S5/124

Abstract: An optical semiconductor device includes an active layer through which light travels, having opposed first and second surfaces; a semiconductor layer of a first conductivity type disposed on the first surface of the active layer; a first electrode contacting the first conductivity type semiconductor layer; a semiconductor layer of a second conductivity type, opposite the first conductivity type, disposed on the second surface of the active layer; a second electrode contacting the second conductivity type semiconductor layer; a wire bonded to one of the first and second electrodes at a position in the resonator length direction corresponding to a localized maximum of a light density distribution in the active layer along the resonator length direction. Current is injected into the device opposite the localized maximum point of the light density distribution in the active layer so that the current density distribution in the active layer along the resonator length direction is proportional to the light density distribution and has a localized maximum at a position approximately at the localized maximum of the light density distribution. Therefore, the carrier density distribution caused by the light density distribution along the resonator length direction is canceled by the current density distribution, whereby the carrier density in the active layer along the resonator length direction is made uniform.

Abstract translation: 一种光学半导体器件包括光线穿过的有源层，具有相对的第一和第二表面; 设置在有源层的第一表面上的第一导电类型的半导体层; 与第一导电类型半导体层接触的第一电极; 设置在有源层的第二表面上的与第一导电类型相反的第二导电类型的半导体层; 与第二导电型半导体层接触的第二电极; 沿着共振器长度方向在有源层中的光密度分布的局部最大值对应于谐振器长度方向上的位置处接合到第一和第二电极中的一个电极的引线。 将电流注入到与有源层中的光密度分布的局部最大点相反的装置中，使得沿着谐振器长度方向的有源层中的电流密度分布与光密度分布成比例，并且在位置处具有局部最大值 大致在光密度分布的局部最大值。 因此，沿着谐振器长度方向的光密度分布引起的载流子密度分布被电流密度分布所抵消，由此沿着谐振器长度方向的有源层中的载流子密度均匀。

公开(公告)号：US5214663A

公开(公告)日：1993-05-25

申请号：US818354

申请日：1992-01-09

Applicant: Syoichi Kakimoto ,  Tomoko Kadowaki ,  Toshitaka Aoyagi ,  Kazuhisa Takagi

Inventor： Syoichi Kakimoto ,  Tomoko Kadowaki ,  Toshitaka Aoyagi ,  Kazuhisa Takagi

IPC: H01S5/00 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323

CPC classification number: H01L33/305 ,  H01L33/0062 ,  H01S5/305 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/32325

Abstract: A semiconductor laser includes a p type cladding layer and an n type cladding layer sandwiching an active layer serially disposed on a semiconductor substrate. The p type cladding layer includes a first dopant impurity producing p type conductivity and a smaller quantity of a second impurity that produces n type conductivity and ionically bonds to the first impurity. The first and second dopant impurities attract each other and cannot move individually during a crystal growth step at high temperature whereby the diffusion of those impurities into the active layer is suppressed, preventing formation of a deep impurity level in the active layer, resulting in a semiconductor laser with a reduced threshold current.

Abstract translation: 半导体激光器包括p型覆层和夹着在半导体衬底上串联设置的有源层的n型覆层。 p型包覆层包括产生p型导电性的第一掺杂剂杂质和产生n型导电性并与第一杂质离子键合的较小量的第二杂质。 第一和第二掺杂剂杂质在高温下在晶体生长步骤期间彼此相互吸引，不能单独移动，从而抑制这些杂质向有源层的扩散，从而防止在有源层中形成深杂质水平，导致半导体 激光器具有降低的阈值电流。

公开(公告)号：US08780949B2

公开(公告)日：2014-07-15

申请号：US13780651

申请日：2013-02-28

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S3/10 ,  H01S5/00 ,  H01S5/22 ,  H01S5/026 ,  H01S5/065 ,  H01S5/40 ,  H01S5/343 ,  H01S5/12

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/0655 ,  H01S5/12 ,  H01S5/34306 ,  H01S5/4031

Abstract: An optical semiconductor device includes: a semiconductor substrate; a semiconductor laser part on the semiconductor substrate and having a vertical ridge; and an optical modulator part on the semiconductor substrate, having an inverted-mesa ridge, and modulating light emitted by the semiconductor laser part.

Abstract translation: 光学半导体器件包括：半导体衬底; 半导体激光器部分，其具有垂直脊; 以及在半导体基板上具有倒置台面脊的光调制器部分，并调制由半导体激光部分发出的光。

公开(公告)号：US08724933B2

公开(公告)日：2014-05-13

申请号：US13399350

申请日：2012-02-17

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: G02F1/035

CPC classification number: G02F1/21 ,  G02F2001/212 ,  H04B10/5561

Abstract: An optical device includes: a substrate; an optical branching filter on the substrate and dividing input light into first and second input lights; first and second Mach-Zehnder optical modulators on the substrate and respectively modulating the first and second input lights; and an optical coupler on the substrate and combining light modulated by the first Mach-Zehnder optical modulator and light modulated by the second Mach-Zehnder optical modulator. Each of the first and second Mach-Zehnder optical modulator includes two optical waveguides, a phase modulation electrode applying a modulation voltage across the optical waveguides to change phases of light in the optical waveguides, and a feed line and a terminal line respectively connected to opposite ends of the phase modulation electrode to supply the modulation voltage to the phase modulation electrode. The feed lines and the terminal lines respectively extend to peripheral portions of the substrate.

Abstract translation: 光学装置包括：基板; 基板上的光分路滤波器，并将输入光分成第一和第二输入光; 第一和第二马赫 - 曾德尔光学调制器，分别调制第一和第二输入光; 以及光耦合器，并且组合由第一马赫 - 曾德尔光调制器调制的光和由第二马赫 - 策德尔光调制器调制的光。 第一和第二马赫 - 策德尔光调制器中的每一个包括两个光波导，相位调制电极，跨越光波导施加调制电压以改变光波导中的光的相位，以及分别连接到相对的光波导的馈线和端子线 相位调制电极的端部向相位调制电极提供调制电压。 馈电线和端子线分别延伸到衬底的周边部分。

公开(公告)号：US20120087614A1

公开(公告)日：2012-04-12

申请号：US13156376

申请日：2011-06-09

Applicant: Eitaro Ishimura ,  Kazuhisa Takagi ,  Keisuke Matsumoto ,  Takeshi Saito

Inventor： Eitaro Ishimura ,  Kazuhisa Takagi ,  Keisuke Matsumoto ,  Takeshi Saito

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F1/2255

Abstract: An optical modulator includes: a semiconductor chip; a waveguide in the semiconductor chip; a traveling wave electrode including an input portion and an output portion, to which a signal is applied for modulating light passing through the waveguide; a power supply line connected to the input portion via a first wire; and a termination resistor connected to the output portion via a second wire. Capacitance between the output portion and a grounding point is larger than capacitance between the input portion and the grounding point.

Abstract translation: 一种光调制器，包括：半导体芯片; 半导体芯片中的波导; 包括输入部分和输出部分的行波电极，向其施加信号以调制通过波导的光; 经由第一线连接到所述输入部分的电源线; 以及通过第二线连接到输出部分的终端电阻器。 输出部分和接地点之间的电容大于输入部分和接地点之间的电容。

公开(公告)号：US08068527B2

公开(公告)日：2011-11-29

申请号：US12720698

申请日：2010-03-10

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/1053 ,  H01S5/1057 ,  H01S5/124 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3412 ,  H01S5/509

Abstract: A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.

Abstract translation: 半导体光学元件具有包括量子点的有源层。 光子密度相对较高的有源层部分中的谐振器方向的量子点的密度相对于有源层的一部分中的光子的密度相对较低的部分的量子点的密度而增加 。

公开(公告)号：US08062466B2

公开(公告)日：2011-11-22

申请号：US12149673

申请日：2008-05-06

Applicant: Kunio Mori ,  Kazuhisa Takagi

Inventor： Kunio Mori ,  Kazuhisa Takagi

IPC: C04B37/00 ,  C09J7/02 ,  C08F8/00 ,  C08F283/00 ,  C08F283/12 ,  C08L83/00 ,  C08G77/00 ,  C08G77/38

CPC classification number: C09J7/35 ,  C09J2483/00 ,  Y10T428/2848 ,  Y10T428/2852

Abstract: A base material for adhesion to be adhered to a solid body comprising; a substrate made from metal, polymer resin, glass or ceramics whose surface is adhesive to the solid body by silyl-ether-linkage that at least one active silyl group selected from the group consisting of a hydrosilyl-containing silyl group, a vinyl-containing silyl group, an alkoxysilyl-containing silyl group and a hydrolytic group-containing silyl group having reactivity with a reactive group on the surface of the solid body is bound to a dehydrogenated residue of hydroxyl group on the surface of the substrate.

Abstract translation: 一种用于附着到固体上的基底材料，包括： 由金属，聚合物树脂，玻璃或陶瓷制成的基材，其表面通过甲硅烷基醚键与固体粘合，至少一种活性甲硅烷基选自含氢化甲硅烷基的甲硅烷基，含乙烯基的 甲硅烷基，含烷氧基甲硅烷基的甲硅烷基和在固体表面具有与反应性基团具有反应性的含水解基的甲硅烷基结合到基材表面上的脱氢的羟基残基。

公开(公告)号：US07773651B2

公开(公告)日：2010-08-10

申请号：US12131955

申请日：2008-06-03

Applicant: Kazuhisa Takagi

Inventor： Kazuhisa Takagi

IPC: H01S5/00

CPC classification number: H01S5/12 ,  H01S5/1064 ,  H01S5/1225 ,  H01S5/124 ,  H01S5/20 ,  H01S5/22

Abstract: A semiconductor laser comprises: a substrate; an n-cladding layer disposed on the substrate; an active layer disposed on the n-cladding layer; a p-cladding layer disposed on the active layer and forming a waveguide ridge; and a diffraction grating layer disposed between the active layer and the n-cladding layer or the p-cladding layer and including a phase shift structure in a part of the diffraction grating layer in an optical waveguide direction. The width of the p-cladding layer is increased in a portion corresponding to the phase shift structure of the diffraction grating layer.

Abstract translation: 半导体激光器包括：基板; 设置在所述基板上的n包层; 设置在n包层上的有源层; p层，设置在有源层上并形成波导脊; 以及设置在有源层和n包层或p包层之间的衍射光栅层，并且在衍射光栅层的一部分中在光波导方向上包括相移结构。 p型覆层的宽度在与衍射光栅层的相移结构对应的部分增加。