摘要:
An exposure apparatus usable with a mask having a pattern and a wafer having a radiation-sensitive surface layer, for transferring with a radiation energy beam the pattern of the mask to the wafer, is disclosed. The apparatus includes a mask supporting member for supporting the mask; a wafer supporting member for supporting the wafer; a reflective member having a reflection surface and an indication pattern, the reflective member being supported by one of the mask supporting member and the wafer supporting member; an arrangement for projecting a beam, which is thinner than the radiation energy beam and which advances along or about the axis of the radiation energy beam, upon the reflective member; a device for observing a positional relationship between the indication pattern and a spot formed by projection of the thinner beam upon the reflective member; and a device for correcting a relationship between the indication pattern and the spot, on the basis of the observation.
摘要:
A wafer chuck usable with a semiconductor exposure apparatus wherein a mask and a semiconductor wafer are placed in a vacuum ambience or a pressure-reduced gas ambience, and wherein the wafer is exposed through the mask to radiation energy such as X-rays contained in a synchrotron radiation beam, by which the pattern of the mask is transferred onto the wafer. The wafer is first attracted on the wafer supporting surface of the chuck by vacuum attraction, and thereafter, the wafer is attracted by the electrostatic attraction force. Thereafter, the vacuum attraction is broken by supplying a gas. When the pattern of the mask is transferred onto the wafer, the wafer is retained on the wafer supporting surface by the electrostatic attraction force only. By this, the sheet-like member (wafer) supporting apparatus can correctly contact the wafer supporting surface to the wafer without being influenced by the undulation of the wafer. In addition, the heat produced in the wafer during exposure can be removed efficiently by temperature controlled water supplied to the wafer supporting apparatus.
摘要:
An X-ray exposure apparatus extracts exposure X-rays from light called synchrotron radiation from a synchrotron radiation source by an optical path including an X-ray mirror and performs exposure using the extracted X-rays. The X-ray mirror contains a material having an absorption edge in at least one of a wavelength range of less than 0.45 nm and a wavelength range exceeding 0.7 nm, thereby implementing exposure using the X-ray in the range of 0.45 nm to 0.7 nm. The X-ray mirror contains at least one material selected from the group consisting of iron, cobalt, nickel, copper, manganese, chromium, and their alloys, nitrides, carbides, and borides.
摘要:
An exposure method for printing a pattern onto a workpiece to be exposed, includes a first exposure step for forming, on the workpiece and by exposure, a transferred image of a first absorbing material pattern formed on a mask and having no periodic structure, and a second exposure step for printing, on the workpiece and by exposure, a diffraction pattern to be produced through Fresnel diffraction due to a second absorbing material pattern formed on the mask and having a periodic structure, the diffraction pattern having a period corresponding to 1/n of a period of the transferred image of the periodic structure pattern, where n is an integer not less than 2, and wherein the first and second exposure steps are performed simultaneously.
摘要:
Disclosed are an object holding process and and an apparatus therefor in which a process strain of the object can be accurately compensated for. When the exposure operation is started, the bottom surface of the object is held by a holding unit. If the object has a strain, the process strain is calculated. Here, if the process strain is larger than a tolerance, the temperature of the object is set to an object setting temperature in a position other than an exposure position in order to contract or expand the object by a predetermined amount for a magnification correction. The bottom surface of the object is then held by the holding unit again, and the exposure of the object is performed in the exposure position.
摘要:
The present invention relates to a temperature control system for a lithographic exposure apparatus wherein a mask and wafer are closely disposed, and predetermined exposure energy is applied to respective shot areas of the wafer through the mask. The exposure energy is a soft-X-ray source, for example. The pattern of the mask is transferred onto the respective shot areas in a step-and-repeat manner. In the apparatus, a temperature control medium liquid is supplied into the wafer chuck which supports the wafer at the exposure position. The flow rate of the temperature control liquid is different during an exposure operation than during a non-exposure-operation. The flow control is determined in consideration of the wafer chuck vibration attributable to the supply of the liquid medium and also, of the heat generation in the wafer by the exposure energy, so that the vibration of the wafer chuck during the exposure operation is suppressed. Simultaneously the temperature rise of the wafer can also be suppressed. The pattern transfer from the mask to the wafer thus be precisely performed.
摘要:
A photoelectric conversion apparatus has a plurallity of photoelectric conversion elements each providing an output signal to a storage capacitor. A matrix wiring unit is arranged opposite the photoelectric conversion elements so as not to cross the signal lines extending from the capacitors. The matrix wiring unit matrix transfers the signals from the capacitors. A switch array unit includes a first switch unit for sequentially transferring the matrix transferred signals, and a first readout device for reading out, as a voltage signal, the signals transferred by the first switch section. The switch array also includes a second switch unit arranged in correspondence with the first switch unit and operated synchronously therewith. The second switch unit receives signals corresponding to noise. A second readout device reads out, as a voltage signal, the output from the second switch unit. A differential amplifier is included for receiving the outputs from the first and second readout devices and outputs a signal corresponding to a difference therebetween.
摘要:
A photoelectric converter in solid-state assembly, comprising the following sections formed on the same substrate: a photoelectric converting section constituted of a number of photoelectric converting elements arranged in an array, each element having a light-receiving surface for input of light-information; and a signal processing circuit section comprising a number of accumulating means, each provided for each of said photoelectric converting elements, for accumulation of signals produced as output from the corresponding photoelectric converting elements, a number of transfer means for transferring the signals accumulated in the corresponding accumulating means to other places, and an array of a number of transistors wired in a two-dimensional matrix to drive a number of the transfer means in time series, said photoelectric converting elements, and the transfer means and the transistors constituting said signal processing circuit section being constituted of thin semi-conductor films.
摘要:
A photoelectric converting apparatus having photoelectric converting elements divided into plural groups and a scanning circuit for dynamically scanning the photoelectric converting elements. There is also further provided a shielded element for each of the groups of the same characteristic as that of the photoelectric converting elements, and a circuit for supplying a bias voltage to the photoelectric converting elements and the shielded element in response to the output of the shielded element.
摘要:
A photoelectric transducing element comprising (a) a substrate; (b) first electrode provided on said substrate; (c) first contact layer to form an ohmic contact with said first electrode with respect to electric charge in at least one polarity; (d) a photoconductive layer provided in contact with said first contact layer and composed of an amorphous material containing silicon atom as a matrix and hydrogen atom, or halogen atom, or both, at a ratio of 1 to 30 atomic % with respect to said silicon atom; (e) second contact layer provided in contact with said photoconductive layer; and (f) second electrode to form an ohmic contact with said second contact layer with respect to said charge.