公开(公告)号：US20090078677A1

公开(公告)日：2009-03-26

申请号：US12145378

申请日：2008-06-24

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: C23F1/00 ,  C23F1/08

CPC classification number: H05H1/46 ,  C23C16/45563 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: An integrated steerability array arrangement for managing plasma uniformity within a plasma processing environment to facilitate processing of a substrate is provided. The arrangement includes an array of electrical elements. The arrangement also includes an array of gas injectors, wherein the array of electrical elements and the array of gas injectors are arranged to create a plurality of plasma regions, each plasma region of the plurality of plasma regions being substantially similar. The arrangement further includes an array of pumps, wherein individual one of the array of pumps being interspersed among the array of electrical elements and the array of gas injectors. The array of pumps is configured to facilitate local removal of gas exhaust to maintain a uniform plasma region within the plasma processing environment.

Abstract translation: 提供了一种用于管理等离子体处理环境中的等离子体均匀性以便于衬底处理的集成可控性阵列布置。 该装置包括一组电气元件。 该布置还包括气体喷射器阵列，其中电气元件阵列和气体喷射器阵列被布置成产生多个等离子体区域，多个等离子体区域中的每个等离子体区域基本相似。 该装置还包括一组泵，其中泵阵列中的单独一个泵散布在电气元件阵列和气体喷射器阵列之间。 泵的阵列被配置为便于局部去除气体排气以在等离子体处理环境内保持均匀的等离子体区域。

公开(公告)号：US06920312B1

公开(公告)日：2005-07-19

申请号：US10038133

申请日：2002-01-02

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: H01J37/32 ,  H04B1/00 ,  H04B7/00

CPC classification number: H01J37/32174 ,  H01J37/32082

Abstract: An RF generating system operates with high efficiency to supply RF output power to a plasma load. The RF generating system is capable of modulating the RF output power at frequencies up to the frequency of the RF output power while maintaining high efficiency operation. Broadband frequency modulation of the RF output power suppresses instabilities thereby minimizing unstable behavior of the plasma load.

Abstract translation: 射频发生系统以高效率工作，为等离子体负载提供射频输出功率。 RF发生系统能够在保持高效率操作的同时在RF输出功率的频率下调制RF输出功率。 RF输出功率的宽带频率调制抑制不稳定性，从而最小化等离子体负载的不稳定行为。

公开(公告)号：US06821378B1

公开(公告)日：2004-11-23

申请号：US10155061

申请日：2002-05-25

Applicant: John Daugherty ,  Neil Benjamin ,  Song Huang

Inventor： John Daugherty ,  Neil Benjamin ,  Song Huang

IPC: H01L21306

CPC classification number: H01J37/32449 ,  H01J37/3244

Abstract: A cylindrical pump baffle fitted to a semiconductor processing chamber is disclosed. The pump baffle contains a screen with bores therethrough to allow process gasses from the process chamber to be exhausted from the chamber at a reduced rate. This decreases process discrepancies to the wafer due to the prejudice of gas concentration as a result of the pressure differential imposed upon the gas and thereby the wafer brought about by the rapid and relatively unimpeded exit flow of process gasses when no restrictive member is in place. The pump baffle is also machined such that it does not block the placement and removal of wafers by the platform robot arm.

Abstract translation: 公开了一种装配到半导体处理室的圆柱形泵挡板。 泵挡板包含具有穿过其中的孔的筛网，以允许来自处理室的处理气体以降低的速率从室中排出。 由于在没有限制性元件就位时由于施加在气体上的压力差导致气体浓度的偏差，从而晶片由于过程气体的快速且相对不受阻碍的流出而带来，从而减少了晶片的工艺差异。 泵挡板也被加工成使得它不会阻挡平台机器人臂的放置和移除晶片。

公开(公告)号：US06781393B2

公开(公告)日：2004-08-24

申请号：US10680791

申请日：2003-10-06

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: G01R3102

CPC classification number: H01L22/34 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A wafer integrated plasma diagnostic method for a semiconductor wafer processing system provides a multiplicity of plasma probe assemblies arranged on a wafer in a planar array fashion such that one plasma probe assembly is located in the center and eight more plasma probe assemblies are located at intermediate positions such that they lie along the radius from the center to the corners; such corners forming four corners of a square box near the edge of the wafer. Method operations provide at each location and in each of the plasma probe assemblies, six possible probe elements having a relative geometrical area such that the assemblies may make simultaneous measurements of both spatial resolution and real time measurement of different plasma characteristics at the wafer surface, such as: D.C. potential, A.C. potential, shading induced potentials, ion fluxes, ion energy distribution, and the electron part of the I-V Langmuir probe characteristic.

Abstract translation: 用于半导体晶片处理系统的晶片集成等离子体诊断方法提供了以平面阵列方式布置在晶片上的多个等离子体探针组件，使得一个等离子体探针组件位于中心，并且另外8个等离子体探针组件位于中间位置 使得它们沿着半径从中心到角落; 这些拐角在晶片边缘附近形成方形盒的四个角。 方法操作在每个位置和每个等离子体探针组件中提供六个可能的探针元件，其具有相对几何区域，使得组件可以同时测量晶片表面上的不同等离子体特性的空间分辨率和实时测量，例如 作为：DC电位，AC电位，阴影诱导电位，离子通量，离子能量分布以及IV Langmuir探针特征的电子部分。

公开(公告)号：US06483690B1

公开(公告)日：2002-11-19

申请号：US09892634

申请日：2001-06-28

Applicant: Shu Nakajima ,  Neil Benjamin

Inventor： Shu Nakajima ,  Neil Benjamin

IPC: H01T2300

CPC classification number: H01L21/6833

Abstract: A sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body wherein the clamping electrode includes at least one strip of a sintered electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity and or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled thorough the clamping electrode from an underlying RF electrode. The RF electrode can be a separate baseplate or it can be a part of the chuck. The ESC's may be used to support semiconductor substrates such as semiconductor wafers in plasma processing equipment.

Abstract translation: 一种烧结陶瓷静电夹持装置（ESC），其包括嵌入在陶瓷体中的图案化静电夹持电极，其中所述夹持电极包括布置成精细图案的至少一个烧结导电材料条。 由于所使用的电极图案的细度，ESC制造期间引起的应力减小，使得夹紧电极在烧结操作之后保持基本平坦。 所得的ESC允许改进的夹紧均匀性。 另一个ESC包括绝缘或半导电体和具有高电阻率或高横向阻抗的夹持电极。 当RF能量通过来自底层RF电极的钳位电极耦合时，静电夹持装置提供改进的RF耦合均匀性。 RF电极可以是单独的基板，也可以是卡盘的一部分。 ESC可用于支持诸如等离子体处理设备中的半导体晶片的半导体衬底。

公开(公告)号：US06344105B1

公开(公告)日：2002-02-05

申请号：US09345639

申请日：1999-06-30

Applicant: John E. Daugherty ,  Neil Benjamin ,  Jeff Bogart ,  Vahid Vahedi ,  David Cooperberg ,  Alan Miller ,  Yoko Yamaguchi

Inventor： John E. Daugherty ,  Neil Benjamin ,  Jeff Bogart ,  Vahid Vahedi ,  David Cooperberg ,  Alan Miller ,  Yoko Yamaguchi

IPC: H01L2100

CPC classification number: H01L21/67069 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/68721 ,  H01L21/68735 ,  Y10S156/915

Abstract: Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.

Abstract translation: 公开了用于等离子体处理系统中的离子辅助蚀刻处理的改进方法和装置。 根据本发明的各个方面，公开了一种高边缘环，带槽边缘环和RF耦合边缘环。 本发明用于提高衬底（晶片）上的蚀刻速率均匀性。 本发明提供的蚀刻率均匀性改进不仅提高了制造成本，而且成本有效，并且不会对颗粒和/或重金属污染造成危害。

公开(公告)号：US5863376A

公开(公告)日：1999-01-26

申请号：US658259

申请日：1996-06-05

Applicant: Thomas E. Wicker ,  Joel M. Cook ,  Robert A. Maraschin ,  William S. Kennedy ,  Neil Benjamin

Inventor： Thomas E. Wicker ,  Joel M. Cook ,  Robert A. Maraschin ,  William S. Kennedy ,  Neil Benjamin

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H05H1/00

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32522

Abstract: A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential batch processing of substrates such as during oxide etching of semiconductor wafers.

Abstract translation: 等离子体处理室包括衬底保持器和介电构件，例如电介质窗口或气体分配板，其具有面向衬底保持器的内表面，内表面保持在阈值温度以下，以最小化衬底处理期间的工艺漂移。 腔室可以包括通过电介质构件感应耦合RF能量以将处理气体激发成等离子体状态的天线。 天线可以包括通过已经被闭路温度控制器冷却的温度控制流体的通道。 内部表面的温度的控制使得在衬底的顺序批处理期间（例如在半导体晶片的氧化物蚀刻期间）处理衬底的工艺漂移和质量降低最小化。

公开(公告)号：US09051647B2

公开(公告)日：2015-06-09

申请号：US12605027

申请日：2009-10-23

Applicant: David J. Cooperberg ,  Valid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

Inventor： David J. Cooperberg ,  Valid Vahedi ,  Douglas Ratto ,  Harmeet Singh ,  Neil Benjamin

IPC: H01L21/306 ,  C23C16/00 ,  C23C16/455 ,  C23C16/507 ,  H01J37/32

CPC classification number: C23C16/45574 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3323 ,  H01J2237/3344

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source such as a planar or non-planar spiral coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

公开(公告)号：US08809747B2

公开(公告)日：2014-08-19

申请号：US13446335

申请日：2012-04-13

Applicant: John Pease ,  Neil Benjamin

Inventor： John Pease ,  Neil Benjamin

IPC: H05B3/68 ,  B23K15/02 ,  B23K13/08 ,  H05B1/02 ,  H05B3/54 ,  H05B3/40 ,  H05B3/02 ,  H05B3/16 ,  H05B3/44 ,  H05B3/10 ,  A21B2/00 ,  D02J13/00

CPC classification number: H01L21/67103 ,  H05B1/0233

Abstract: A method of operating a heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus, wherein the heating plate comprises power supply lines and power return lines and respective heater zone connected between every pair of power supply line and power return line. The method reduces maximum currents carried by the power supply lines and power return lines by temporally spreading current pulses for powering the heater zones.

Abstract translation: 一种操作用于在半导体处理装置中支撑半导体衬底的用于支撑半导体衬底的衬底支撑组件的加热板的方法，其中所述加热板包括电源线和功率回流管线以及连接在每对电源线和电源之间的相应加热器区域 返回线。 该方法通过暂时扩展用于为加热器区域供电的电流脉冲来减小由电源线和功率返回线承载的最大电流。

公开(公告)号：US20130334171A1

公开(公告)日：2013-12-19

申请号：US13969411

申请日：2013-08-16

Applicant: Neil Benjamin

Inventor： Neil Benjamin

IPC: H05H1/46

CPC classification number: H05H1/46 ,  C23C16/45563 ,  C23C16/505 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A method for providing steerability in a plasma processing environment during substrate processing is provided. The method includes managing power distribution by controlling power being delivered into the plasma processing environment through an array of electrical elements. The method also includes directing gas flow during substrate processing by controlling the amount of gas flowing through an array of gas injectors into the plasma processing environment, wherein individual ones of the array of gas injectors are interspersed between the array of electrical elements. The method further includes controlling gas exhausting during substrate processing by managing amount of gas exhaust being removed by an array of pumps, wherein the array of electrical elements, the array of gas injectors, and the array of pumps are arranged to create a plurality of plasma regions, each plasma region being substantially similar, thereby creating a uniform plasma region across the substrate.

Abstract translation: 提供了一种在衬底处理期间在等离子体处理环境中提供可操纵性的方法。 该方法包括通过控制通过电气元件阵列传送到等离子体处理环境中的功率来管理功率分配。 该方法还包括通过控制气体喷射器阵列中流动到等离子体处理环境中的气体的量来引导衬底处理过程中的气体流动，其中气体喷射器阵列中的单个气体喷射器阵列分散在电气元件阵列之间。 该方法还包括通过管理通过泵阵列去除的排气量来控制衬底处理期间的排气，其中电气元件阵列，气体喷射器阵列和泵阵列被布置成产生多个等离子体 区域，每个等离子体区域基本相似，从而在衬底上产生均匀的等离子体区域。