公开(公告)号：US07387131B2

公开(公告)日：2008-06-17

申请号：US10353015

申请日：2003-01-29

申请人： Osamu Kuroda ,  Hiroki Taniyama ,  Takayuki Toshima

发明人： Osamu Kuroda ,  Hiroki Taniyama ,  Takayuki Toshima

IPC分类号： B08B3/00 ,  B08B3/12 ,  B08B6/00 ,  B05C11/00 ,  B05C11/02 ,  B05C13/00 ,  B05C13/02 ,  B05C7/06 ,  B05C5/00

CPC分类号： H01L21/6719 ,  H01L21/67051 ,  H01L21/68728 ,  H01L21/68792

摘要： A substrate processing apparatus for processing a substrate With a processing fluid is provided. The apparatus includes holding members 60 for holding the substrate W, a chuck member 61 for supporting the holding members 60 and a top-face member 62 approaching the substrate W to cover its surface. In arrangement, since the top-face member 62 is supported by the chuck member 61, the holding members 60 can rotate together with the top-face member 62 in one body. With this structure, it is possible to reduce the influence of particles on the substrate W and also possible to provided a low-cost substrate processing apparatus occupied as little installation space as possible.

摘要翻译： 提供了一种用于处理基板的基板处理装置。 该装置包括用于保持基板W的保持构件60，用于支撑保持构件60的卡盘构件61和接近基板W以覆盖其表面的顶面构件62。 在这样的结构中，由于顶面构件62被卡盘构件61支撑，所以保持构件60能够与顶面构件62一体旋转。 利用这种结构，可以减小颗粒对基板W的影响，并且也可以提供尽可能少的安装空间的低成本的基板处理装置。

公开(公告)号：US20070204885A1

公开(公告)日：2007-09-06

申请号：US11706557

申请日：2007-02-13

申请人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

发明人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

IPC分类号： B08B3/00

CPC分类号： H01L21/31133 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/67057 ,  Y10S134/902

摘要： Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

摘要翻译： 通过将半导体晶片放置在处理容器中，在晶片表面形成纯水膜，通过将臭氧气体溶解在纯水膜中形成臭氧水膜，除去形成在晶片上的抗蚀剂膜，从而清除半导体晶片 臭氧水膜的代理。 纯水膜通过在晶片的表面上冷凝蒸汽而形成。 形成在晶片表面上的抗蚀剂膜也可以通过使用通过供应到处理容器中的蒸汽和臭氧气体之间的相互作用产生的羟基自由基来除去。 因此，可以高效地除去抗蚀剂膜。

公开(公告)号：US06895979B2

公开(公告)日：2005-05-24

申请号：US10359208

申请日：2003-02-06

申请人： Kyouji Kohama ,  Eiji Shimbo ,  Yuji Kamikawa ,  Takayuki Toshima ,  Hiroki Ohno

发明人： Kyouji Kohama ,  Eiji Shimbo ,  Yuji Kamikawa ,  Takayuki Toshima ,  Hiroki Ohno

IPC分类号： H01L21/304 ,  B08B3/02 ,  B08B3/10 ,  H01L21/00

CPC分类号： H01L21/67086 ,  B08B3/02 ,  B08B3/102 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708 ,  Y10S134/902

摘要： A processing apparatus essentially includes a rotatable rotor 21 for carrying semiconductor wafers W, a motor 22 for driving to rotate the rotor 21, a plurality of processing chambers for surrounding the wafers W carried by the rotor 21, for example, an inner chamber 23 and an outer chamber 24, a chemical supplying unit 50, an IPA supplying unit 60, a rinse supplying unit 70 and a drying fluid supplying unit 80. With this constitution of the apparatus, it is possible to prevent the wafers from being contaminated due to the reaction of treatment liquids of different kinds, with the improvement of processing efficiency and miniaturization of the apparatus.

摘要翻译： 一种处理装置主要包括用于承载半导体晶片W的可旋转转子21，用于驱动转子21旋转的电动机22，用于围绕由转子21承载的晶片W的多个处理室，例如内室23和 外部室24，化学品供应单元50，IPA供应单元60，漂洗供应单元70和干燥流体供应单元80.通过该设备的这种结构，可以防止晶片被 不同种类的处理液的反应，提高了加工效率和设备的小型化。

公开(公告)号：US20050011537A1

公开(公告)日：2005-01-20

申请号：US10606135

申请日：2003-06-25

申请人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

发明人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

IPC分类号： H01L21/304 ,  G03F7/42 ,  H01L21/311 ,  F23J1/00 ,  B08B3/10

CPC分类号： H01L21/31133 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/67057 ,  Y10S134/902

摘要： Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

摘要翻译： 通过将半导体晶片放置在处理容器中，在晶片表面形成纯水膜，通过将臭氧气体溶解在纯水膜中形成臭氧水膜，除去形成在晶片上的抗蚀剂膜，从而清除半导体晶片 臭氧水膜的代理。 纯水膜通过在晶片的表面上冷凝蒸汽而形成。 形成在晶片表面上的抗蚀剂膜也可以通过使用通过供应到处理容器中的蒸汽和臭氧气体之间的相互作用产生的羟基自由基来除去。 因此，可以高效地除去抗蚀剂膜。

公开(公告)号：US06613692B1

公开(公告)日：2003-09-02

申请号：US09628235

申请日：2000-07-28

申请人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

发明人： Takayuki Toshima ,  Kinya Ueno ,  Miyako Yamasaka ,  Hideyuki Tsutsumi ,  Tadashi Iino ,  Yuji Kamikawa

IPC分类号： H01L21302

CPC分类号： H01L21/31133 ,  G03F7/423 ,  H01L21/67051 ,  H01L21/67057 ,  Y10S134/902

摘要： Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

摘要翻译： 通过将半导体晶片放置在处理容器中，在晶片表面形成纯水膜，通过将臭氧气体溶解在纯水膜中形成臭氧水膜，除去形成在晶片上的抗蚀剂膜，从而清除半导体晶片 臭氧水膜的代理。 纯水膜通过在晶片的表面上冷凝蒸汽而形成。 形成在晶片表面上的抗蚀剂膜也可以通过使用通过供应到处理容器中的蒸汽和臭氧气体之间的相互作用产生的羟基自由基来除去。 因此，可以高效地除去抗蚀剂膜。

公开(公告)号：US5928390A

公开(公告)日：1999-07-27

申请号：US787862

申请日：1997-01-23

申请人： Hidetami Yaegashi ,  Takayuki Toshima ,  Masami Akimoto ,  Eiji Yamaguchi ,  Junichi Kitano ,  Takayuki Katano ,  Hiroshi Shinya ,  Naruaki Iida

发明人： Hidetami Yaegashi ,  Takayuki Toshima ,  Masami Akimoto ,  Eiji Yamaguchi ,  Junichi Kitano ,  Takayuki Katano ,  Hiroshi Shinya ,  Naruaki Iida

IPC分类号： H01L21/00 ,  H01L21/68 ,  B23P21/00 ,  B65G49/07 ,  H01L21/027

CPC分类号： H01L21/67178 ,  H01L21/67196 ,  H01L21/67225 ,  H01L21/67742 ,  Y10T29/41

摘要： A processing apparatus comprises a plurality of process unit groups each including a plurality of process units for subjecting an object to a series of processes, the process units being arranged vertically in multiple stages, an object transfer space being defined among the process unit groups, and a transfer mechanism for transferring the object, the transfer mechanism having a transfer member vertically movable in the object transfer space, the transfer member being capable of transferring the object to each of the process units. The processing apparatus further comprises a mechanism for forming a downward air flow in the object transfer space, a mechanism for controlling the quantity of the downward air flow, and a mechanism for controlling the pressure in the object transfer space. Thus, a variation in condition of the object transfer space is reduced.

摘要翻译： 处理装置包括多个处理单元组，每个处理单元组包括用于对象进行一系列处理的多个处理单元，处理单元以多级垂直排列，在处理单元组之间定义对象传送空间，以及 用于传送物体的传送机构，传送机构具有可在物体传送空间中垂直移动的传送部件，传送部件能够将物体传送到每个处理单元。 处理装置还包括用于在物体传送空间中形成向下的空气流的机构，用于控制向下的空气流量的机构，以及用于控制物体传送空间中的压力的​​机构。 因此，物体传送空间的状态的变化减小。

公开(公告)号：US20140250714A1

公开(公告)日：2014-09-11

申请号：US14283874

申请日：2014-05-21

申请人： Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazayuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazayuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： H01L21/02

CPC分类号： H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

摘要翻译： 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

公开(公告)号：US08701308B2

公开(公告)日：2014-04-22

申请号：US12995524

申请日：2009-02-12

申请人： Koukichi Hiroshiro ,  Takayuki Toshima

发明人： Koukichi Hiroshiro ,  Takayuki Toshima

IPC分类号： F26B3/04

CPC分类号： H05B3/0052 ,  H05B2203/021 ,  H05B2203/022

摘要： A fluid heater includes a duct pipe through which a fluid to be heated flows, and a heating part configured to heat the duct pipe. One or more fillers is provided inside the duct pipe. A substrate processing apparatus includes: a supply source configured to supply a liquid of a volatile organic solvent; the aforementioned fluid heater configured to heat the liquid of the organic solvent supplied by the supply source so as to generate a steam of the organic solvent; and a chamber configured to accommodate a substrate W and to dry the substrate W accommodated therein, to which the steam of the organic solvent generated by the fluid heater is supplied.

摘要翻译： 流体加热器包括管道，待加热的流体通过该管道流动，加热部分构造成加热管道管道。 在管道管内设置一个或多个填料。 基板处理装置包括：供给源，其构造成供给挥发性有机溶剂的液体; 上述流体加热器构造成加热由供给源供给的有机溶剂的液体，以产生有机溶剂的蒸汽; 以及室，其被构造成容纳衬底W并且干燥容纳在其中的衬底W，所述衬底W被供应到由流体加热器产生的有机溶剂的蒸汽。

公开(公告)号：US08434423B2

公开(公告)日：2013-05-07

申请号：US12698455

申请日：2010-02-02

申请人： Takayuki Toshima ,  Kazuo Terada

发明人： Takayuki Toshima ,  Kazuo Terada

IPC分类号： B05C13/00 ,  B05C11/00 ,  B05C3/00 ,  C23C16/00 ,  G03D5/00 ,  B08B6/00 ,  C23F1/00

CPC分类号： H01L21/67057 ,  H01L21/67034 ,  H01L21/67346 ,  H01L21/67748 ,  H01L21/68742

摘要： Disclosed is a substrate carrying apparatus having a simple configuration capable of inhibiting the occurrence of pattern collapse. A carrying tray of the disclosed substrate carrying apparatus includes a bottom plate for supporting the substrate and a circumferential side wall being provided around the bottom plate. An opening is formed in the bottom plate. An elevating member, to and from which the substrate is to be transferred, passes through the opening. A space is temporarily formed in a carrying tray. The elevating member within the opening passes to the outside of the carrying tray through the space. When the substrate is carried, the liquid is reservoired within the carrying tray, and the substrate is carried while the liquid remained on the upper surface of the substrate.

摘要翻译： 公开了具有能够抑制图案塌陷的发生的简单结构的基板输送装置。 所公开的基板承载装置的承载托盘包括用于支撑基板的底板和围绕底板设置的周向侧壁。 在底板上形成开口。 升降构件，要从基板转移到其上并通过该开口。 暂时在搬运托盘中形成空间。 开口内的升降构件通过该空间传递到搬运托盘的外部。 当承载基板时，液体被储存在承载托盘内，并且在液体保留在基板的上表面上的同时承载基板。

公开(公告)号：US08372212B2

公开(公告)日：2013-02-12

申请号：US13369970

申请日：2012-02-09

申请人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： B08B3/04

CPC分类号： F26B3/02

摘要： According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

摘要翻译： 根据一个实施方案，超临界干燥方法包括用化学溶液清洗半导体衬底，在清洁之后用纯水冲洗半导体衬底，通过供应醇将覆盖半导体衬底的表面的液体从纯水改变为醇 在冲洗后的表面上引导具有被醇润湿的表面的半导体衬底进入腔室，通过向室中供应惰性气体从室中排出氧气，通过增加室中的温度将醇置于超临界状态 醇的临界温度或排出氧后的较高温度，并且通过降低室中的压力并将醇从超临界状态改变为气态，从室中排出醇。 房间包含SUS。 对室的内壁面进行电解抛光。