公开(公告)号：US07465677B2

公开(公告)日：2008-12-16

申请号：US11410070

申请日：2006-04-25

申请人： Atsuo Isobe ,  Satoshi Murakami ,  Tamae Takano ,  Shunpei Yamazaki

发明人： Atsuo Isobe ,  Satoshi Murakami ,  Tamae Takano ,  Shunpei Yamazaki

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L27/1248 ,  H01L29/42384

摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting a plasma treatment to the semiconductor film under a condition of an electron density of 1×1011 cm−3 or more and 1×1013 cm−3 or less and an electron temperature of 0.5 eV or more and 1.5 eV or less, using a high frequency wave, forming a second insulating film to cover the semiconductor film, forming a gate electrode over the second insulating film, forming a third insulating film to cover the gate electrode, and forming a conductive film over the third insulating film.

摘要翻译： 本发明的半导体器件的制造方法包括以下步骤：在衬底上形成第一绝缘膜，在第一绝缘膜上形成半导体膜，通过对半导体膜进行等离子体处理来对半导体膜进行氧化或氮化 使用高频波，电子密度为1×10 11 cm -3以上且1×10 13 cm -3以下，电子温度为0.5eV以上且1.5eV以下的条件，形成覆盖半导体的第2绝缘膜 在所述第二绝缘膜上形成栅电极，形成第三绝缘膜以覆盖所述栅电极，以及在所述第三绝缘膜上形成导电膜。

公开(公告)号：US07408191B2

公开(公告)日：2008-08-05

申请号：US10768419

申请日：2004-02-02

申请人： Satoshi Murakami ,  Mitsuhiro Ichijo ,  Taketomi Asami

发明人： Satoshi Murakami ,  Mitsuhiro Ichijo ,  Taketomi Asami

IPC分类号： H01L29/04

CPC分类号： H01L27/3258 ,  H01L21/7684 ,  H01L21/76841 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L33/0041 ,  H01L51/5221 ,  H01L51/5253 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

摘要： In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT.As the insulating films 117, 317 and 417 provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline metal ion and an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline metal ion and an alkaline-earth metal ion, for example, a silicon nitride film containing a large amount of fluorine, a silicon oxynitride film containing a large amount of fluorine or an organic resin film containing a particle consisted of an antimony (Sb) compound, a tin (Sn) compound, or an indium (In) compound is used.

公开(公告)号：US20080174710A1

公开(公告)日：2008-07-24

申请号：US12077161

申请日：2008-03-14

申请人： Satoshi Murakami ,  Yoshiharu Hirakata ,  Etsuko Fujimoto ,  Yu Yamazaki ,  Shunpei Yamazaki

发明人： Satoshi Murakami ,  Yoshiharu Hirakata ,  Etsuko Fujimoto ,  Yu Yamazaki ,  Shunpei Yamazaki

IPC分类号： G02F1/136

CPC分类号： H01L28/40 ,  H01L27/1255 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is characterized in that a pin hole 106 formed by chance in the dielectric 103 is filled up with an insulating material (filler) 107 made of a resin material. This can prevent short circuit between the first conductive film 102 and the second conductive film 104. The capacitor is used as a storage capacitor provided in a pixel of a semiconductor device.

摘要翻译： 提供了高度可靠的电容器，具有高操作性能和可靠性的半导体器件及其制造方法。 由第一导电膜102，由绝缘材料制成的电介质103和第二导电膜104形成的电容器的特征在于，在电介质103中偶然形成的销孔106填充有绝缘材料（填料） 107由树脂材料制成。 这可以防止第一导电膜102和第二导电膜104之间的短路。 电容器用作设置在半导体器件的像素中的存储电容器。

公开(公告)号：US20080164478A1

公开(公告)日：2008-07-10

申请号：US11957641

申请日：2007-12-17

申请人： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

发明人： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

IPC分类号： H01L27/12

CPC分类号： H01L29/04 ,  G02F1/13454 ,  G02F1/136204 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124

摘要： In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.

摘要翻译： 在制造半导体器件时，通过干蚀刻在层间绝缘膜中形成接触孔时产生静电。 防止了由于所产生的静电的行进而对像素区域或驱动电路区域的损害。 栅极信号线在结晶半导体膜之上彼此间隔开。 因此，当在层间绝缘膜中打开接触孔时，第一保护电路不电连接。 在干蚀刻期间产生的用于打开接触孔的静电从栅极信号线移动，损坏栅极绝缘膜，通过晶体半导体膜，并且在栅极绝缘膜到达栅极信号线之前再次损坏栅极绝缘膜。 由于在干蚀刻期间产生的静电损害第一保护电路，所以静电的能量减小，直到损失驱动电路TFT的能力。 从而防止了驱动电路TFT遭受静电放电损坏。

公开(公告)号：US07375376B2

公开(公告)日：2008-05-20

申请号：US11633579

申请日：2006-12-05

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

IPC分类号： H01L29/786 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L27/1244 ,  G02F1/136204 ,  H01L21/76804 ,  H01L21/76831 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L51/0037 ,  Y10S257/906 ,  Y10S257/908

摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

摘要翻译： 具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极 层间绝缘膜。 形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。

公开(公告)号：US07330234B2

公开(公告)日：2008-02-12

申请号：US11079840

申请日：2005-03-14

申请人： Satoshi Murakami ,  Yoshiharu Hirakata ,  Etsuko Fujimoto ,  Yu Yamazaki ,  Shunpei Yamazaki

发明人： Satoshi Murakami ,  Yoshiharu Hirakata ,  Etsuko Fujimoto ,  Yu Yamazaki ,  Shunpei Yamazaki

IPC分类号： G02F1/1339

CPC分类号： H01L28/40 ,  H01L27/1255 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/78645

摘要： A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is characterized in that a pin hole 106 formed by chance in the dielectric 103 is filled up with an insulating material (filler) 107 made of a resin material. This can prevent short circuit between the first conductive film 102 and the second conductive film 104. The capacitor is used as a storage capacitor provided in a pixel of a semiconductor device.

摘要翻译： 提供了高度可靠的电容器，具有高操作性能和可靠性的半导体器件及其制造方法。 由第一导电膜102，由绝缘材料制成的电介质103和第二导电膜104形成的电容器的特征在于，在电介质103中偶然形成的销孔106填充有绝缘材料（填料） 107由树脂材料制成。 这可以防止第一导电膜102和第二导电膜104之间的短路。 电容器用作设置在半导体器件的像素中的存储电容器。

公开(公告)号：US07288789B2

公开(公告)日：2007-10-30

申请号：US10446187

申请日：2003-05-28

申请人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

发明人： Shunpei Yamazaki ,  Yukio Tanaka ,  Jun Koyama ,  Mitsuaki Osame ,  Satoshi Murakami ,  Hideto Ohnuma ,  Etsuko Fujimoto ,  Hidehito Kitakado

IPC分类号： H01L31/0376 ,  H01L31/20 ,  H01L31/036

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L51/5246 ,  H01L51/5284 ,  H01L2227/323

摘要： A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.

摘要翻译： 一种半导体器件，其中根据电路的性能布置适当结构的TFT，并且形成占据小面积的存储电容器，该半导体器件具有高性能和明亮的图像。 栅极绝缘膜的厚度取决于重视操作速度的电路和重要的栅极绝缘击穿电压的电路，并且用于形成LDD区域的位置取决于TFT的TFT而不同 重视对抗热门运营商和TFT的对策，重点针对当前的对策。 这使得可以实现高性能的半导体器件。 此外，存储容量由遮光膜和其氧化物形成，以使其面积最小化，并且实现了能够显示亮画面的半导体器件。

公开(公告)号：US07282736B2

公开(公告)日：2007-10-16

申请号：US10731033

申请日：2003-12-10

申请人： Satoshi Murakami ,  Noriko Miyagi

发明人： Satoshi Murakami ,  Noriko Miyagi

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/076 ,  H01L21/01

CPC分类号： H01L51/5203 ,  H01L27/1248 ,  H01L27/3244 ,  H01L51/56

摘要： (Object) In a light-emitting device, it is preferable that a surface of a film below a light-emitting element has flatness. Therefore, treatment such as planarization of a surface of a film is performed after forming the film. The present invention proposes a structure of a light-emitting device that can make the foregoing planarization easier. (Solving Means) The same layer as a wiring formed on a first film is used to manufacture a second film. Herewith, a portion of the first film below a light-emitting element can be prevented from being etched to form unevenness at a surface of the first film during the formation of the wiring. In addition, a surface of a third film is made higher by providing the second film to enable local planarization.

摘要翻译： （对象物）在发光装置中，优选的是，发光元件下方的膜的表面具有平坦度。 因此，在形成膜之后进行膜表面的平坦化处理。 本发明提出能够使上述平坦化容易的发光装置的结构。 （解决方案）使用与形成在第一膜上的布线相同的层来制造第二膜。 由此，可以防止在形成布线期间在发光元件下方的第一膜的一部分被蚀刻以在第一膜的表面形成不均匀性。 此外，通过提供第二膜以使局部平坦化，使第三膜的表面更高。

公开(公告)号：US20070236647A1

公开(公告)日：2007-10-11

申请号：US11806739

申请日：2007-06-04

申请人： Toshimitsu Konuma ,  Takeshi Nishi ,  Michio Shimizu ,  Harumi Mori ,  Kouji Moriya ,  Satoshi Murakami

发明人： Toshimitsu Konuma ,  Takeshi Nishi ,  Michio Shimizu ,  Harumi Mori ,  Kouji Moriya ,  Satoshi Murakami

IPC分类号： C09K19/02

CPC分类号： G02F1/133711 ,  C09K19/0225 ,  C09K19/0266 ,  G02F1/141

摘要： A liquid crystal device comprising: a pair of substrates having an electrode arrangement thereon; an orientation control means provided on at least one of said substrates; and a ferroelectric or antiferroelectric liquid crystal layer interposed between said substrates, said liquid crystal layer being uniaxially oriented by virtue of said orientation control means, wherein means for suppressing an orientation control effect of said orientation control means with respect to said liquid crystal layer is provided between said liquid crystal layer and said orientation control means.

摘要翻译： 一种液晶装置，包括：一对基板，其上具有电极装置; 设置在至少一个所述基板上的取向控制装置; 以及介于所述基板之间的铁电或反铁电液晶层，所述液晶层通过所述取向控制装置单轴取向，其中提供了用于抑制所述取向控制装置相对于所述液晶层的取向控制效果的装置 在所述液晶层和所述取向控制装置之间。

公开(公告)号：US20070187761A1

公开(公告)日：2007-08-16

申请号：US11729241

申请日：2007-03-28

申请人： Takashi Hamada ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Toru Takayama

发明人： Takashi Hamada ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Toru Takayama

IPC分类号： H01L27/12

CPC分类号： H01L21/02672 ,  G02F1/13454 ,  H01L21/2022 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L27/1288 ,  H01L27/3246 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L51/5253 ,  H01L51/56

摘要： The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semiconductor film to the semiconductor film containing a rare gas element by a heat treatment. Furthermore, a first impurity region and a second impurity region formed in a semiconductor layer of a first n-channel TFT are provided outside a gate electrode. A third impurity region formed in a semiconductor layer of a second n-channel TFT is provided so as to be partially overlapped with a gate electrode. A third impurity region is provided outside a gate electrode. A fourth impurity region formed in a semiconductor layer of a p-channel TFT is provided so as to be partially overlapped with a gate electrode. A fifth impurity region is provided outside a gate electrode.

摘要翻译： 本发明的特征在于，在通过阻挡层使用催化元件而获得的结晶半导体膜上形成含有稀有气体元素的半导体膜，催化元素从结晶半导体膜移动到含有 稀有气体元素通过热处理。 此外，形成在第一n沟道TFT的半导体层中的第一杂质区域和第二杂质区域设置在栅电极的外侧。 形成在第二n沟道TFT的半导体层中的第三杂质区域设置成与栅电极部分重叠。 第三杂质区域设置在栅极外部。 形成在p沟道TFT的半导体层中的第四杂质区域设置成与栅电极部分重叠。 第五杂质区域设置在栅极外部。