公开(公告)号：US4926978A

公开(公告)日：1990-05-22

申请号：US360871

申请日：1989-06-02

申请人： Katsuhiro Shibata ,  Yuichi Azuma ,  Masao Inoue ,  Shinichiro Okumura

发明人： Katsuhiro Shibata ,  Yuichi Azuma ,  Masao Inoue ,  Shinichiro Okumura

IPC分类号： F16D65/092 ,  F16D69/00 ,  F16D69/02

CPC分类号： F16D69/026 ,  F16D65/092 ,  F16D69/02 ,  F16D2069/002 ,  F16D2069/004

摘要： Improved friction pads for use with disc brake. The pad has a central main portion and a peripheral portion which are formed of different matrices having different compositions. The matrix of the central main portion contains a hard substance or substances having a specified range of hardness whereas the matrix of the peripheral portion does not contain such hard substances or contains in only a limited smaller amount than the central main portion. This prevents the brake disc from wearing due to friction with the pad and thus avoids uneven abrasion of the brake disc.

摘要翻译： 改进的用于盘式制动器的摩擦垫。 垫具有由具有不同组成的不同基体形成的中心主要部分和周边部分。 中心主要部分的基质含有硬物质或具有特定硬度范围的物质，而周边部分的基质不含有这些硬质物质，或仅含有比中央主要部分少的量。 这样可以防止制动盘由于与垫的摩擦而磨损，从而避免制动盘的不均匀磨损。

公开(公告)号：US07741201B2

公开(公告)日：2010-06-22

申请号：US11371082

申请日：2006-03-09

申请人： Jiro Yugami ,  Masao Inoue ,  Kenichi Mori ,  Shinsuke Sakashita

发明人： Jiro Yugami ,  Masao Inoue ,  Kenichi Mori ,  Shinsuke Sakashita

IPC分类号： H01L21/3205

CPC分类号： H01L29/495 ,  H01L21/28176 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66575

摘要： The semiconductor device includes a semiconductor substrate, a gate insulating film formed in contact with an upper side of the semiconductor substrate, and a gate electrode formed on the upper side of the gate insulating film and made of metal nitride or metal nitride silicide. A buffer layer for preventing diffusion of nitrogen and silicon is interposed between the gate insulating film and the gate electrode. Preferably, the buffer layer has a thickness of 5 nm or less. In the case where gate electrode contains Ti elements, and the gate insulating film contains Hf elements, the buffer layer preferably contains a titanium film.

摘要翻译： 半导体器件包括半导体衬底，与半导体衬底的上侧接触形成的栅极绝缘膜，以及形成在栅极绝缘膜的上侧并由金属氮化物或金属氮化物硅化物制成的栅电极。 用于防止氮和硅扩散的缓冲层插入在栅极绝缘膜和栅电极之间。 优选地，缓冲层的厚度为5nm以下。 在栅极含有Ti元素，栅极绝缘膜含有Hf元素的情况下，缓冲层优选含有钛膜。

公开(公告)号：US07569890B2

公开(公告)日：2009-08-04

申请号：US11409081

申请日：2006-04-24

申请人： Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

发明人： Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

IPC分类号： H01L23/62

CPC分类号： H01L21/823857

摘要： The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered.The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.

摘要翻译： 在这种CMOS型半导体器件的制造方法中，能够抑制在栅极电极中含有硼的情况下，从pMOS晶体管的栅电极到半导体衬底的硼渗透，同时能够提高pMOS的NBTI寿命 提供了晶体管，而不降低nMOS晶体管的性能。 关于本发明的CMOS型半导体器件的制造方法具有以下工序。 卤素引入pMOS晶体管形成区域的半导体衬底。 接下来，在pMOS晶体管形成区域的半导体衬底上形成栅极绝缘膜。 接下来，将氮引入到栅极绝缘膜。

公开(公告)号：US20060273401A1

公开(公告)日：2006-12-07

申请号：US11409081

申请日：2006-04-24

申请人： Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

发明人： Shimpei Tsujikawa ,  Yasuhiko Akamatsu ,  Hiroshi Umeda ,  Jiro Yugami ,  Masaharu Mizutani ,  Masao Inoue ,  Junichi Tsuchimoto ,  Kouji Nomura

IPC分类号： H01L29/94

CPC分类号： H01L21/823857

摘要： The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.

公开(公告)号：US20060267116A1

公开(公告)日：2006-11-30

申请号：US11439260

申请日：2006-05-24

申请人： Yasuhiro Shimamoto ,  Jiro Yugami ,  Masao Inoue ,  Masaharu Mizutani

发明人： Yasuhiro Shimamoto ,  Jiro Yugami ,  Masao Inoue ,  Masaharu Mizutani

IPC分类号： H01L29/94

CPC分类号： H01L27/092 ,  H01L21/28035 ,  H01L21/28202 ,  H01L21/28229 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： An object of the present invention is to improve the performance of a semiconductor device having a CMISFET. Each of an n channel MISFET and a p channel MISFET which form the CMISFET includes a gate insulating film composed of a silicon oxynitride film and a gate electrode including a silicon film positioned on the gate insulating film. Metal elements such as Hf are introduced near the interface between the gate electrode and the gate insulating film with a surface density of 1×1013 to 5×1014 atoms/cm2. The impurity concentration of channel regions of the n channel MISFET and the p channel MISFET is controlled to be equal to or lower than 1.2×1018/cm3.

摘要翻译： 本发明的目的是提高具有CMISFET的半导体器件的性能。 形成CMISFET的n沟道MISFET和p沟道MISFET中的每一个包括由氮氧化硅膜和包括位于栅极绝缘膜上的硅膜的栅电极构成的栅极绝缘膜。 在栅电极和栅极绝缘膜之间的界面附近引入诸如Hf的金属元素，表面密度为1×10 13至5×10 14原子/ cm 2 。 n沟道MISFET和p沟道MISFET的沟道区域的杂质浓度被控制为等于或低于1.2×10 16 / cm 3。

公开(公告)号：US20060214245A1

公开(公告)日：2006-09-28

申请号：US11371082

申请日：2006-03-09

申请人： Jiro Yugami ,  Masao Inoue ,  Kenichi Mori ,  Shinsuke Sakashita

发明人： Jiro Yugami ,  Masao Inoue ,  Kenichi Mori ,  Shinsuke Sakashita

IPC分类号： H01L29/94

CPC分类号： H01L29/495 ,  H01L21/28176 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66575

摘要： The semiconductor device includes a semiconductor substrate, a gate insulating film formed in contact with an upper side of the semiconductor substrate, and a gate electrode formed on the upper side of the gate insulating film and made of metal nitride or metal nitride silicide. A buffer layer for preventing diffusion of nitrogen and silicon is interposed between the gate insulating film and the gate electrode. Preferably, the buffer layer has a thickness of 5 nm or less. In the case where gate electrode contains Ti elements, and the gate insulating film contains Hf elements, the buffer layer preferably contains a titanium film.

摘要翻译： 半导体器件包括半导体衬底，与半导体衬底的上侧接触形成的栅极绝缘膜，以及形成在栅极绝缘膜的上侧并由金属氮化物或金属氮化物硅化物制成的栅电极。 用于防止氮和硅扩散的缓冲层插入在栅极绝缘膜和栅电极之间。 优选地，缓冲层的厚度为5nm以下。 在栅极含有Ti元素，栅极绝缘膜含有Hf元素的情况下，缓冲层优选含有钛膜。

公开(公告)号：US20050260244A9

公开(公告)日：2005-11-24

申请号：US10977880

申请日：2004-10-29

申请人： Atsushi Watanabe ,  Masao Inoue

发明人： Atsushi Watanabe ,  Masao Inoue

IPC分类号： A01N25/04 ,  A01N25/10 ,  A01N25/14 ,  A01N43/84 ,  A01N25/26 ,  A01N25/28 ,  A01N37/18

CPC分类号： A01N25/14 ,  A01N25/04 ,  A01N25/10 ,  A01N43/84 ,  A01N25/12 ,  A01N2300/00

摘要： The particle obtained by spray-drying of a dispersion wherein a water-insoluble pesticidal active ingredient and oxidized polyethylene are dispersed in water can control release the water-insoluble pesticidal active ingredient.

公开(公告)号：US06579640B1

公开(公告)日：2003-06-17

申请号：US09670193

申请日：2000-09-26

申请人： Takashi Nagase ,  Takeo Hamamatsu ,  Masao Inoue ,  Hideyuki Asanuma ,  Naoyoshi Hinotsu

发明人： Takashi Nagase ,  Takeo Hamamatsu ,  Masao Inoue ,  Hideyuki Asanuma ,  Naoyoshi Hinotsu

IPC分类号： H01M200

CPC分类号： H01M2/1229 ,  H01M2/0217 ,  H01M2/06 ,  H01M2/30 ,  H01M10/287 ,  H01M10/345

摘要： A sealed rectangular battery has a conductive battery case including an external casing and a sealing cap. The external casing encloses a generator element and is sealed by attaching the sealing cap using heat. The battery includes an electrode terminal with an opposite polarity to the battery case, and a safety valve. The safety valve includes a cap that is charged with the same polarity as the battery case and a valving element that covers a vent hole. The electrode terminal and safety valve are provided separately at different positions on the battery case. This construction is simpler than conventional batteries where the safety valve is integrally formed with an electrode terminal, which means that the electrode terminal can be miniaturized. This battery also has improved internal resistance.

摘要翻译： 密封的矩形电池具有包括外部壳体和密封盖的导电电池壳体。 外壳包围发电机元件，并通过使用热附接密封盖来密封。 电池包括与电池壳体相反极性的电极端子和安全阀。 安全阀包括带有与电池壳体相同极性的盖和覆盖通气孔的阀元件。 电极端子和安全阀分别设置在电池盒的不同位置。 这种结构比传统的电池简单，其中安全阀与电极端子一体形成，这意味着电极端子可以小型化。 该电池也具有改善的内阻。

公开(公告)号：US06338915B1

公开(公告)日：2002-01-15

申请号：US09537390

申请日：2000-03-29

申请人： Takashi Nagase ,  Takeo Hamamatsu ,  Masao Inoue ,  Hideyuki Asanuma

发明人： Takashi Nagase ,  Takeo Hamamatsu ,  Masao Inoue ,  Hideyuki Asanuma

IPC分类号： H01M210

CPC分类号： H01M2/1229 ,  H01M10/281 ,  H01M10/287 ,  Y02E60/124 ,  Y02P70/54

摘要： A battery structure is arranged such that an elastic valve body or the like cannot easily come off from the cover body during the production of the battery, which thereby enhances the production yield. A cover body of the invention includes a flange portion airtightly fixed to an injection port and a bulge portion protruding from the flange portion and provided with a space in which an elastic valve body is fitted (mounted). The bulge portion has an opening for ventilation provided on the side wall thereof and a protrusion at the lower end of the side wall thereof protruding inwardly of the side wall, whereby the elastic valve body can be held by the protrusion and the annular rim of the elastic valve body so that it can be prevented from coming off from the cover body. Accordingly, the elastic valve body can be prevented from coming off from the cover body due to vibration developed during the transportation of the cover body or like occasions, making it possible to enhance the production yield.

摘要翻译： 电池结构被布置成使得弹簧阀体等在电池制造期间不能容易地从盖体脱落，从而提高了生产率。 本发明的盖体包括气密地固定到注射口的凸缘部分和从凸缘部分突出并具有弹性阀体装配（安装）的空间的凸起部分。 凸出部分具有设置在其侧壁上的通风开口和在其侧壁的下端处的突出部，其在侧壁的内侧突出，由此弹性阀体可以由突起和环形边缘保持 弹性阀体，从而能够防止从盖体脱落。 因此，可以防止弹性阀体由于在盖体的运输过程中产生的振动等而从盖体脱落，从而可以提高生产率。

公开(公告)号：US6007946A

公开(公告)日：1999-12-28

申请号：US881146

申请日：1997-06-24

申请人： Mutsumi Yano ,  Mitsuzo Nogami ,  Katsuhiko Shinyama ,  Kousuke Satoguchi ,  Mitsunori Tokuda ,  Ikuo Yonezu ,  Koji Nishio ,  Masao Inoue ,  Shin Fujitani

发明人： Mutsumi Yano ,  Mitsuzo Nogami ,  Katsuhiko Shinyama ,  Kousuke Satoguchi ,  Mitsunori Tokuda ,  Ikuo Yonezu ,  Koji Nishio ,  Masao Inoue ,  Shin Fujitani

IPC分类号： H01M4/32 ,  H01M4/52 ,  H01M4/24 ,  H01M4/26

CPC分类号： H01M4/32 ,  H01M4/52 ,  Y02P70/54

摘要： In the non-sintered nickel electrode for an alkaline storage battery according to the invention, a yttrium metal powder and/or a yttrium compound powder has been added to a particulate active material comprising composite particles each consisting of a nickel hydroxide core and a sodium-doped cobalt compound shell. Because the yttrium metal powder and/or yttrium compound powder inhibits the diffusion of cobalt into the nickel hydroxide core, the non-sintered nickel electrode of the invention exhibits a high utilization efficiency not only in an initial phase of charge-discharge cycling but over a long time of use. Moreover, because the yttrium metal powder and/or yttrium compound powder enhances the oxygen overpotential, the non-sintered nickel electrode for an alkaline storage battery according to the invention shows very satisfactory charge characteristics particularly at high temperatures.

摘要翻译： 在根据本发明的碱性蓄电池的非烧结镍电极中，将钇金属粉末和/或钇化合物粉末添加到包含复合颗粒的颗粒活性材料中，每个复合颗粒由氢氧化镍芯和钠 - 掺钴复合壳。 由于钇金属粉末和/或钇化合物粉末抑制钴扩散到氢氧化镍芯中，本发明的非烧结镍电极不仅在充放电循环的初始阶段中显示出高的利用效率， 使用时间长 此外，由于钇金属粉末和/或钇化合物粉末提高氧超电势，所以根据本发明的碱性蓄电池的非烧结镍电极显示出非常令人满意的充电特性，特别是在高温下。