公开(公告)号：US20090184387A1

公开(公告)日：2009-07-23

申请号：US12354428

申请日：2009-01-15

Applicant: Kiyoshi Takeuchi

Inventor： Kiyoshi Takeuchi

IPC: H01L31/02 ,  H01L31/0368 ,  H01L29/788

CPC classification number: H01L27/14687 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

Abstract: A sensor is provided. The sensor includes semiconductor layer; a photodiode, an impurity-doped polycrystalline silicon layer; and a gate electrode. The photodiode is formed in the semiconductor layer. The impurity-doped polycrystalline silicon layer is formed above the semiconductor layer. The gate electrode applies a gate voltage to the polycrystalline silicon layer. A wiring layer is provided on a first surface of the semiconductor layer and light is incident on a second surface thereof.

Abstract translation: 提供传感器。 传感器包括半导体层; 光电二极管，杂质掺杂多晶硅层; 和栅电极。 在半导体层中形成光电二极管。 杂质掺杂多晶硅层形成在半导体层上方。 栅电极向多晶硅层施加栅极电压。 布线层设置在半导体层的第一表面上，并且光入射到其第二表面上。

公开(公告)号：US20090159441A1

公开(公告)日：2009-06-25

申请号：US12063229

申请日：2006-12-04

Applicant: Masao Marunaka ,  Takayuki Tsuchiya ,  Atsuhiro Terakura ,  Kiyoshi Takeuchi

Inventor： Masao Marunaka ,  Takayuki Tsuchiya ,  Atsuhiro Terakura ,  Kiyoshi Takeuchi

IPC: C23C14/35

CPC classification number: C23C14/35 ,  H01J37/32009 ,  H01J37/3266

Abstract: A plasma film deposition system increases plasma density and improves sputtering efficiency by not generating a corner of a sheet plasma and can be operated safely by preventing occurrence of the corner in sheet plasma.The system comprises: a plasma gun capable of discharging source plasma toward a transport direction; a sheet plasma deformation chamber; a pair of magnetic field generating means provided such that same polarities thereof face each other; a film deposition chamber; and a forming magnet coil provided upstream of the pair of magnetic field generating means in the transport direction. The magnetic field generating means and the forming magnet coil generate a magnetic field whose magnetic flux densities in the transport direction are substantially constant at portions of a transport center and their vicinity portions, the portions corresponding to the forming magnet coil and the magnetic field generating means.

Abstract translation: 等离子体膜沉积系统通过不产生片状等离子体的拐角来提高等离子体密度并提高溅射效率，并且可以通过防止片状等离子体中的拐角发生而安全地操作。 该系统包括：等离子体枪，能够沿着输送方向对源极进行放电; 片状等离子体变形室; 设置成使得其相同极性彼此面对的一对磁场产生装置; 成膜室; 以及形成磁体线圈，其沿输送方向设置在所述一对磁场产生装置的上游。 磁场产生装置和成形磁体线圈产生一个磁场，其输送方向上的磁通密度在输送中心及其附近部分的部分，对应于形成磁体线圈的部分和磁场产生装置 。

公开(公告)号：US20090114665A1

公开(公告)日：2009-05-07

申请号：US11816686

申请日：2006-02-14

Applicant: Kenichi Ogawa ,  Motoi Okada ,  Kenji Yamakawa ,  Kiyoshi Takeuchi

Inventor： Kenichi Ogawa ,  Motoi Okada ,  Kenji Yamakawa ,  Kiyoshi Takeuchi

IPC: G07F11/00 ,  B65B31/00

CPC classification number: B65G47/1421 ,  B65G27/02 ,  B65G27/32 ,  C23C14/24 ,  C23C14/243

Abstract: A vibrating bowl and the like are provided which are capable of accurately counting the number of objects to be fed. The vibrating bowl (10) includes: a concave portion (10a) capable of storing therein collectivity of objects (15) to be fed; a feed passage (20) capable of feeding the objects (15) within the concave portion (10a) by vibrating the objects (15); and a step portion (26) configured to cause the objects to be ejected outside of the concave portion (10a) in a direction substantially perpendicular and downwardly oblique to a feed direction in which those objects (15) which are present in the vicinity of a termination of the feed passage (20) are fed.

Abstract translation: 提供了能够精确地计数要供给的物体的数量的振动碗等。 振动碗（10）包括：能够存储要供给的物体（15）的集合体的凹部（10a） 通过振动物体（15）能够将物体（15）供给到凹部（10a）内的供给通道（20）。 以及台阶部（26），被配置为使物体在与所述凹部（10a）附近的所述物体（15）的进给方向大致垂直向下倾斜的方向上被排出到所述凹部（10a）的外侧， 进料通道（20）的终止进料。

公开(公告)号：US20080251849A1

公开(公告)日：2008-10-16

申请号：US10593300

申请日：2005-03-22

Applicant: Shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Kiyoshi Takeuchi ,  Atsushi Ogura ,  Masayasu Tanaka ,  Masahiro Nomura ,  Koichi Takeda ,  Toru Tatsumi ,  Koji Watanabe ,  Koichi Terashima

Inventor： Shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Kiyoshi Takeuchi ,  Atsushi Ogura ,  Masayasu Tanaka ,  Masahiro Nomura ,  Koichi Takeda ,  Toru Tatsumi ,  Koji Watanabe ,  Koichi Terashima

IPC: H01L29/76 ,  H01L21/336

CPC classification number: H01L29/785 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/6681 ,  H01L2029/7858

Abstract: A semiconductor device comprising a first semiconductor region and a second semiconductor region, (a) wherein a field effect transistor is comprised of the first semiconductor region comprising at least one semiconductor layer(s) protruding upward from a substrate, a gate electrode(s) formed via an insulating film such that the gate electrode(s) strides over the semiconductor layer(s) and source/drain regions provided in the semiconductor layer(s) on both sides of the gate electrode(s), whereby a channel region is formed in at least both sides of the semiconductor layer(s), (b) wherein the second semiconductor region comprises semiconductor layers protruding upward from the substrate and placed, at least opposing the first semiconductor region at both ends in the direction perpendicular to a channel current direction and the side surface of the semiconductor layers facing the first semiconductor region is parallel to the channel current direction.

Abstract translation: 一种包括第一半导体区域和第二半导体区域的半导体器件，（a）其中场效应晶体管由包括从衬底向上突出的至少一个半导体层的第一半导体区域，栅电极， 通过绝缘膜形成，使得栅电极跨越设置在栅电极两侧的半导体层中的半导体层和源极/漏极区，由此沟道区是 形成在所述半导体层的至少两侧，（b），其中所述第二半导体区域包括从所述衬底向上突出的半导体层，并且至少相对于与沟道垂直的方向的两端处的所述第一半导体区域相对 电流方向和面对第一半导体区域的半导体层的侧表面平行于沟道电流方向。

公开(公告)号：US20080113305A1

公开(公告)日：2008-05-15

申请号：US11968016

申请日：2007-12-31

Applicant: Hiroyuki Yoneyama ,  Akira Ikeda ,  Shin Soejima ,  Kiyoshi Takeuchi ,  Naoto Matsuda

Inventor： Hiroyuki Yoneyama ,  Akira Ikeda ,  Shin Soejima ,  Kiyoshi Takeuchi ,  Naoto Matsuda

IPC: G03C7/30

CPC classification number: G03C1/08 ,  G03C1/0051 ,  G03C1/09 ,  G03C1/30 ,  G03C1/46 ,  G03C5/04 ,  G03C5/50 ,  G03C7/3013 ,  G03C7/3022 ,  G03C7/3041 ,  G03C7/3225 ,  G03C7/34 ,  G03C7/346 ,  G03C7/36 ,  G03C7/3825 ,  G03C7/3885 ,  G03C7/39208 ,  G03C7/4136 ,  G03C2001/03517 ,  G03C2001/03535 ,  G03C2001/03541 ,  G03C2001/03594 ,  G03C2001/0476 ,  G03C2001/093 ,  G03C2007/3025 ,  G03C2007/3027 ,  G03C2007/3043 ,  G03C2200/07 ,  G03C2200/27 ,  G03C2200/33

Abstract: A silver halide color photographic light-sensitive material, having at least one each of blue-, green-, and red-sensitive emulsion layers containing yellow, magenta, and cyan couplers, respectively, on a support; wherein said blue-sensitive emulsion layer contains at least one coupler of formula (I); and wherein the light-sensitive material satisfies expression a-1) and/or b-1): wherein, Q forms a 5- to 7-membered ring with the —N═C—N(R1)-; R1 and R2 each are a substituent; m is 0 to 5; and X is a hydrogen atom, or a coupling split-off group; 0.5≦Dmax(UV)/Dmin(UV)≦1.1  a-1) wherein Dmax(UV)/Dmin(UV) is the smallest of the value in a wavelength range of 340 to 450 nm; 1300≦(B−C)/A≦20000  b-1) wherein B is yellow Dmax, C is yellow Dmin; and A is an amount mol/m2 of the coupler of formula (I).

Abstract translation: 一种卤化银彩色照相感光材料，其分别在载体上具有含有黄色，品红色和青色成色剂的蓝色，绿色和红色感光乳剂层中的至少一种; 其中所述感蓝乳剂层含有至少一种式（I）的成色剂; 并且其中所述感光材料满足表达式a-1）和/或b-1）：其中，Q与-N-C-N（R1） - 形成5-至7-元环; R1和R2各自为取代基; m为0〜5; X为氢原子或偶联分离基团; <？in-line-formula description =“In-line Formulas”end =“lead”？> 0.5 <= Dmax（UV）/ Dmin（UV）<= 1.1 a-1） “直线公式”end =“tail”？>其中Dmax（UV）/ Dmin（UV）是340至450nm的波长范围内的最小值; <？in-line-formula description =“In-line Formulas”end =“lead”？> 1300 <=（BC）/ A <= 20000 b-1）<？in-line-formula description =“In-line 式“end =”tail“？>其中B为黄色Dmax，C为黄色Dmin; 并且A是式（I）的成色剂的量mol / m 2。

公开(公告)号：US20080079077A1

公开(公告)日：2008-04-03

申请号：US11570037

申请日：2005-05-25

Applicant: Koichi Takeda ,  Masahiro Nomura ,  Kiyoshi Takeuchi ,  Hitoshi Wakabayashi ,  Shigeharu Yamagami ,  Risho Koh ,  Koichi Terashima ,  Katsuhiko Tanaka ,  Masayasu Tanaka

Inventor： Koichi Takeda ,  Masahiro Nomura ,  Kiyoshi Takeuchi ,  Hitoshi Wakabayashi ,  Shigeharu Yamagami ,  Risho Koh ,  Koichi Terashima ,  Katsuhiko Tanaka ,  Masayasu Tanaka

IPC: H01L27/12 ,  H01L21/84

CPC classification number: H01L27/11 ,  H01L27/1104 ,  H01L27/1108 ,  H01L29/785 ,  Y10S257/903

Abstract: A semiconductor device having SRAM cell units each comprising a pair of a first driving transistor and a second driving transistor, a pair of a first load transistor and a second load transistor, and a pair of a first access transistor and a second access transistor, wherein each of the transistors comprises a semiconductor layer projecting upward from a substrate plane, a gate electrode extending on opposite sides of the semiconductor layer so as to stride over a top of the semiconductor layer, a gate insulating film interposed between the gate electrode and the semiconductor layer, and a pair of source/drain areas formed in the semiconductor layer; and the first and second driving transistors each have a channel width larger than that of at least either each of the load transistors or each of the access transistors.

Abstract translation: 一种具有SRAM单元单元的半导体器件，每个SRAM单元包括一对第一驱动晶体管和第二驱动晶体管，一对第一负载晶体管和第二负载晶体管，以及一对第一存取晶体管和第二存取晶体管，其中 每个晶体管包括从衬底平面向上突出的半导体层，在半导体层的相对侧上延伸以跨越半导体层的顶部的栅极电极，插入在栅极电极和半导体之间的栅极绝缘膜 层，以及形成在半导体层中的一对源极/漏极区域; 并且第一和第二驱动晶体管的沟道宽度均大于至少任一个负载晶体管或每个存取晶体管的沟道宽度。

公开(公告)号：US20070075372A1

公开(公告)日：2007-04-05

申请号：US10576412

申请日：2004-10-19

Applicant: Koichi Terashima ,  Kiyoshi Takeuchi ,  shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Atsushi Ogura ,  Koji Watanabe ,  Toru Tatsumi ,  Koichi Takeda ,  Masahiro Nomura ,  Masayasu Tanaka

Inventor： Koichi Terashima ,  Kiyoshi Takeuchi ,  shigeharu Yamagami ,  Hitoshi Wakabayashi ,  Atsushi Ogura ,  Koji Watanabe ,  Toru Tatsumi ,  Koichi Takeda ,  Masahiro Nomura ,  Masayasu Tanaka

IPC: H01L23/62

CPC classification number: H01L29/7853 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/7854 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is provided a semiconductor device wherein at least the largest width of a source/drain region is larger than the width of a semiconductor region and the source/drain region has a slope having a width continuously increasing from the uppermost side to the substrate side, and a silicide film is formed in the surface of the slope.

Abstract translation: 提供了一种半导体器件，其中源极/漏极区域的至少最大宽度大于半导体区域的宽度，并且源极/漏极区域具有从最上侧到衬底侧的宽度连续增加的斜率， 并且在斜面的表面中形成硅化物膜。

公开(公告)号：US07125988B2

公开(公告)日：2006-10-24

申请号：US10669414

申请日：2003-09-25

Applicant: Kiyoshi Takeuchi ,  Nobuo Seto ,  Hiroyuki Yoneyama ,  Shigeki Uehira ,  Satoshi Sano ,  Yasuhiro Shimada

Inventor： Kiyoshi Takeuchi ,  Nobuo Seto ,  Hiroyuki Yoneyama ,  Shigeki Uehira ,  Satoshi Sano ,  Yasuhiro Shimada

IPC: C07D285/34 ,  G03C1/06 ,  G03C7/26 ,  G03C7/32

CPC classification number: C07D417/06 ,  C07D285/24 ,  C07D417/12 ,  C07D417/14 ,  G03C7/36 ,  G03C2200/33

Abstract: A yellow dye-forming coupler represented by formula (I): wherein Q represents a group of nonmetallic atoms that form a 5- to 7-membered ring in combination with the —N═C—N(R1)—; R1 and R2 each represent a substituent; R4 represents an alkyl group; m represents an integer of 0 to 4; and X represents a hydrogen atom, or a group capable of being split-off upon a coupling reaction with an oxidized product of a developing agent; and when R4 represents a primary alkyl group, R1 represents —(CH2)3O—R101 in which R101 is an alkyl group having 4 to 8 carbon atoms. A silver halide color photographic light-sensitive material having at least one yellow dye-forming coupler represented by formula (I) in at least one layer provided on a support.

Abstract translation: 由式（I）表示的形成黄色染料的成色剂：其中Q表示与-N-C-N（R 1'） - 组合形成5-至7-元环的一组非金属原子; R 1和R 2各自表示取代基; R 4表示烷基; m表示0〜4的整数， X表示氢原子或与显影剂的氧化物进行偶联反应时可分离的基团; 并且当R 4代表伯烷基时，R 1表示 - （CH 2 CH 2）3 - 或 _{101其中R 101是具有4至8个碳原子的烷基。 一种卤化银彩色摄影感光材料，其在至少一层设置在载体上的至少一种由式（I）表示的形成黄色染料的成色剂。}

公开(公告)号：US20050088931A1

公开(公告)日：2005-04-28

申请号：US10921264

申请日：2004-08-19

Applicant: Kiyoshi Takeuchi ,  Hidehito Nakamura ,  Takehiko Ide ,  Hirohisa Koizumi

Inventor： Kiyoshi Takeuchi ,  Hidehito Nakamura ,  Takehiko Ide ,  Hirohisa Koizumi

IPC: G06F1/26 ,  G11B7/00

CPC classification number: G06F1/266

Abstract: When the USB power supply (VBUS) of the USB interface is used as the power supply for driving a conventional optical disc apparatus or disc apparatus, the supplied current exceeds the standard of USB. An optical disc apparatus is provided with: a spindle motor for rotating and driving an optical disc; a feed motor for shifting an optical pick-up in the direction of the radius of an optical disc, the optical pick-up carrying out either read-out of data that has been written in onto an optical disc or write-in of data onto an optical disc; and an actuator for minutely correcting the position of an object lens which is provided in the above described optical pick-up and which irradiates an optical disc with a laser beam which is collected, wherein a conversion circuit for changing a signal voltage of a servo processor, which is transmitted to a driving circuit of the above described spindle motor, is placed between the above described driving circuit and the above described servo processor for controlling the above described driving circuit along a signal line, and the above described conversion circuit can be controlled by a CPU provided in the above described optical disc apparatus.

Abstract translation: 当将USB接口的USB电源（VBUS）用作用于驱动常规光盘装置或盘装置的电源时，所提供的电流超过USB的标准。 光盘装置具有：主轴电动机，用于旋转和驱动光盘; 用于沿光盘半径的方向移动光学拾取器的进给电动机，光学拾取器执行读入已写入光盘的数据或将数据写入到 光盘; 以及致动器，用于微调校正在上述光学拾取器中设置的物镜的位置，并且用收集的激光束照射光盘，其中，用于改变伺服处理器的信号电压的转换电路 传送到上述主轴电动机的驱动电路的电动机被放置在上述驱动电路和上述伺服处理器之间，用于沿着信号线控制上述驱动电路，并且可以控制上述转换电路 通过设置在上述光盘装置中的CPU。

公开(公告)号：US06660465B2

公开(公告)日：2003-12-09

申请号：US10157066

申请日：2002-05-30

Applicant: Shigeki Uehira ,  Kiyoshi Takeuchi

Inventor： Shigeki Uehira ,  Kiyoshi Takeuchi

IPC: G03C108

CPC classification number: G03C1/08 ,  C07D231/12 ,  C07D231/14 ,  C07D231/18 ,  C07D231/40 ,  C07D403/06 ,  C07D417/06 ,  G03C7/30535 ,  G03C7/30558 ,  Y10S430/156 ,  Y10S430/158

Abstract: A compound represented by the following formula (I) to (VII): In the formulas, R1 represents an acyl group, cyano group, nitro group, aryl group, heterocyclic residue, alkoxycarbonyl group, aryloxycarbonyl group, carbamoyl group, sulfamoyl group, alkylsulfonyl group, or arylsulfonyl group, which may be substituted, or a cyano or nitro group; R2 represents an alkyl group, aryl group or heterocyclic residue, which may be substituted; R3 represents an aryl group or heterocyclic residue, each of which may be substituted; R4, R6 and R9 represent a substituent; R5, R7 and R8 represent a hydrogen atom or substituent; n represents an integer of 0 to 2, wherein when n is 2, a plurality of R4's may be the same or different; L represents a divalent linking group; and k represents an integer of 0 or more, wherein when k is 2 or more, a plurality of L's may be the same or different.

Abstract translation: 由下式（I）〜（VII）表示的化合物：式中，R 1表示酰基，氰基，硝基，芳基，杂环残基，烷氧基羰基，芳氧基羰基，氨基甲酰基，氨磺酰基 基团，烷基磺酰基或可以被取代的芳基磺酰基，或氰基或硝基; R 2表示可以被取代的烷基，芳基或杂环残基; R 3表示可以被取代的芳基或杂环残基; R 4，R 6和R 9表示取代基; R 5，R 7和R 8表示氢原子或取代基; n表示0〜2的整数，n为2时，多个R 4可以相同或不同， L表示二价连接基团; 并且k表示0以上的整数，其中当k为2以上时，多个L 1可以相同或不同。