摘要:
A design structure embodied in a machine-readable medium used in a design process provides a transmitter having a frequency response controllable in accordance with an operational parameter, and may include a storage operable to store operational parameters for controlling a frequency response of the transmitter under each of a plurality of corresponding operating conditions. A sensor can be used to detect an operating condition. In response to a change in the detected operating condition, a stored operational parameter corresponding to the detected operating condition can be used to control the frequency response of the transmitter.
摘要:
A system is provided for detecting a fault in a signal transmission path. In one embodiment, the system can include a variable amplitude signal attenuator which is operable to modify an input signal by variably attenuating a signal voltage swing of the input signal. Desirably, the input signal is attenuated only when transitioning from a high signal voltage level towards a low signal voltage level d variably, such that a larger high-to-low signal voltage swing is attenuated more than a smaller high-to-low signal voltage swing. Desirably, a comparator, which may apply hysteresis to the output signals, may detect a crossing of a reference voltage level by the modified input signal. In this way, when the comparator does not detect an expected crossing of the reference voltage level by the modified input signal, a determination can be made that a fault exists in the signal transmission path.
摘要:
Aspects of the invention relate to a programmable heavy-ion sensing device for accelerated DRAM soft error detection. Design of a DRAM-based alpha particle sensing apparatus is preferred to be used as an accelerated on-chip SER test vehicle. The sensing apparatus is provided with programmable sensing margin, refresh rate, and supply voltage to achieve various degree of SER sensitivity. In addition, a dual-mode DRAM array is proposed so that at least a portion of the array can be used to monitor high-energy particle activities during soft-error detection (SED) mode.
摘要:
Methods for manufacturing an integrated wafer scale package that reduces a potential misalignment between a chip and a pocket of a carrier substrate. According to one aspect of the present invention, a method for manufacturing a semiconductor device includes a photoresist layer disposed on a carrier substrate, a chip placed onto a surface of the photoresist layer. The photoresist layer is patterned using the chip as a mask. The chip is removed from the photoresist layer after the patterning step. A pocket is formed in the carrier substrate, and the chip that was removed is placed into the pocket formed in the carrier substrate.
摘要:
In a method for performing equalization of a communication system, a predetermined signal can be transmitted from a transmitter unit to a receiver unit in a downchannel direction on a transmission line, for example as a pair of differential signals which simultaneously transition in opposite directions on respective signal conductors of the transmission line. At the receiver unit, an eye opening of the signal received from the transmission line can be analyzed to determine equalization information. Equalization information can be transmitted from the receiver unit to the transmitter unit in an upchannel direction on the transmission line and be received at the transmitter unit. Using received equalization information, a transmission characteristic of the transmitter unit can be adjusted.
摘要:
As disclosed herein, a microelectronic circuit and method are provided for improving signal integrity at a transmission line. The circuit includes a programmably adjustable impedance matching circuit which is coupled to a transmission line which includes a programmably adjustable inductive element. The programmably adjustable impedance matching circuit is desirably provided on the same chip as a receiver or transmitter to which the transmission line is coupled, or alternatively, on an element packaged together with the chip that includes the receiver or transmitter. The impedance of the programmably adjustable impedance matching circuit is adjustable in response to control input to improve signal integrity at the transmission line.
摘要:
A method and apparatus, is herein disclosed, for adjusting capacitance of an on-chip capacitor formed on a substrate. A plurality of conductive layers is separated by a layer ofdielectric material. The dielectric material of the capacitor is exposed to an ion beam. The ion beam includes ions of at least one material to modify a dielectric constant of the dielectric material.
摘要:
An integrated circuit structure is disclosed that comprises a pair of capacitors, each having metal plates separated by an insulator, and metal gate semiconductor transistors electrically connected to the capacitors. The metal gate of the transistors and one of the metal plates of each of the capacitors comprise the same metal level in the integrated circuit structure. More specifically, each of the capacitors comprise a vertical capacitor having an upper metal plate vertically over a lower metal plate and each metal gate of the transistors and each upper metal plate of the capacitors comprise the same metal level in the integrated circuit structure.
摘要:
A semiconductor chip package with reduced cross-talk between adjacent signals in a layer of a carrier is disclosed. A first pair of conductors for carrying a first signal is provided in a layer of the carrier. A second pair of conductors for carrying a second signal is provided adjacent to the first pair of conductors in the layer, where the first and second pairs of conductors are configured such that cross-talk between the first and second pairs of conductors is substantially minimized, without increasing the size of the package. The height of the first pair of conductors is shorter than the second pair of conductors. Alternatively, the first and second pairs of conductors are configured so that they evenly affect each other. The chip package thus reduces the cross-talk without compromising the density of the interconnections in the package or resulting in an increase in the size of the package.
摘要:
A memory system having a plurality of T-RAM cells arranged in an array is presented where each T-RAM cell has dual vertical devices and is fabricated over a SiC substrate. Each T-RAM cell has a vertical thyristor and a vertical transfer gate. The top surface of each thyristor is coplanar with the top surface of each transfer gate within the T-RAM array to provide a planar cell structure for the T-RAM array. A method is also presented for fabricating the T-RAM array having the vertical thyristors, the vertical transfer gates and the planar cell structure over the SiC substrate.