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64 条记录 (耗时 0.023 秒)

    Frame-supported pellicle for protection of photolithographic mask
    31.
    发明授权
    Frame-supported pellicle for protection of photolithographic mask 失效
    框架支撑防护薄膜，用于保护光刻掩模

    公开(公告)号：US5370951A

    公开(公告)日：1994-12-06

    申请号：US7525

    申请日：1993-01-22

    申请人： Yoshihiro Kubota ,  Meguru Kashida ,  Yuichi Hamada ,  Hirofumi Kishita ,  Shinichi Sato ,  Kouichi Yamaguchi

    发明人： Yoshihiro Kubota ,  Meguru Kashida ,  Yuichi Hamada ,  Hirofumi Kishita ,  Shinichi Sato ,  Kouichi Yamaguchi

    IPC分类号： C08L83/04 ,  C08K5/5435 ,  C09J183/14 ,  G03F1/62 ,  H01L21/027 ,  G03F9/00

    CPC分类号： G03F1/64 ,  C09J183/14 ,  Y10T428/31544

    摘要： An improvement is proposed in a frame-supported pellicle, i.e. a thin transparent film of a polymeric resin adhesively bonded to a frame member, used for dust-proof protection of a photomask in a photolithographic patterning work for the manufacture of electronic devices. The improvement comprises using, as the adhesive, an organopolysiloxane-based composition which comprises (a) a perfluoroalkyl-containing diorganopolysiloxane having at least two vinyl groups per molecule, (b) an organohydrogenpolysiloxane having at least one epoxy group and (c) a platinum catalyst for promoting the hydrosilation reaction between (a) and (b). As compared with conventional adhesives, a quite good adhesive bonding strength can be obtained with this adhesive even when the membrane is made from a fluorocarbon group-containing polymeric resin and the adhesive layer obtained therefrom is highly resistant against ultraviolet irradiation to ensure a long serviceable life of the pellicle.

    摘要翻译： 在用于电子设备的制造的光刻图案化工作中，在框架支撑的防护薄膜中提出了一种改进的粘合方式粘合到框架构件上的聚合物树脂透明薄膜，用于光掩模的防尘保护。 该改进包括使用基于有机聚硅氧烷的组合物作为粘合剂，其包含（a）每分子具有至少两个乙烯基的含全氟烷基的二有机聚硅氧烷，（b）具有至少一个环氧基的有机氢聚硅氧烷和（c）铂 促进（a）和（b）之间硅氢化反应的催化剂。 与常规粘合剂相比，即使膜由含碳氟化合物基团的聚合物树脂制成并且由其获得的粘合剂层也能够高度耐紫外线照射，从而可以获得相当好的粘合强度，以确保长的使用寿命 的防护薄膜。

    Method for the preparation of a frame-supported pellicle for photolithography
    32.
    发明授权
    Method for the preparation of a frame-supported pellicle for photolithography 失效
    用于制备用于光刻的框架支撑的防护薄膜的方法

    公开(公告)号：US5327808A

    公开(公告)日：1994-07-12

    申请号：US63853

    申请日：1993-05-18

    申请人： Yoshihiko Nagata ,  Yuichi Hamada ,  Meguru Kashida ,  Yoshihiro Kubota

    发明人： Yoshihiko Nagata ,  Yuichi Hamada ,  Meguru Kashida ,  Yoshihiro Kubota

    IPC分类号： B26D3/08 ,  B26F3/08 ,  G03F1/62 ,  H01L21/00 ,  H01L21/027 ,  H01L21/30 ,  B26D7/10

    CPC分类号： H01L21/67017 ,  B26D3/085 ,  B26F3/08 ,  G03F1/64 ,  Y10S83/914 ,  Y10T156/108 ,  Y10T83/02 ,  Y10T83/0414 ,  Y10T83/293

    摘要： A process for the preparation of a frame-supported pellicle membrane used for dust-proof protection of a photomask in the photolithographic patterning work of, for example, semiconductor devices. An improvement is proposed for trimming of a pellicle membrane formed on a base plate and adhesively bonded to a pellicle frame to remove the extraneous portion of the membrane protruded out of the pellicle frame. Instead of the mechanical punching method for trimming, the trimming work according to the invention is performed by using a cutting device having a cutter element heated at a temperature higher than the melting point of the thermoplastic resin forming the membrane so that the membrane is trimmed by melting of the resin. Different from the conventional mechanical punching method, the trimming process of the invention is free from the problem of occurrence of dust particles deposited on the membrane to adversely affect the quality of the pattern reproduction.

    摘要翻译： 一种制备用于例如半导体器件的光刻图形工作中用于光掩模的防尘保护的框架支撑的防护薄膜的方法。 针对形成在基板上的防护薄膜组件的修整进行了改进，并将其粘接到防护薄膜组件框架上以除去从防护薄膜组件框架突出的膜的外部部分。 代替用于修剪的机械冲压方法，根据本发明的修剪工作是通过使用切割装置进行的，该切割装置具有在比形成膜的热塑性树脂的熔点高的温度下加热的切割元件，使得膜被修剪 熔化树脂。 与传统的机械冲压方法不同，本发明的修整过程没有沉积在膜上的灰尘颗粒的发生的问题，从而不利地影响图案再现的质量。

    Membrane consisting of silicon carbide and silicon nitride, method for the preparation thereof and mask for X-ray lithography utilizing the same
    34.
    发明授权
    Membrane consisting of silicon carbide and silicon nitride, method for the preparation thereof and mask for X-ray lithography utilizing the same 失效
    由碳化硅和氮化硅组成的膜，其制备方法和使用其的X射线光刻掩模

    公开(公告)号：US5209996A

    公开(公告)日：1993-05-11

    申请号：US850691

    申请日：1992-03-11

    申请人： Meguru Kashida ,  Yoshihiro Kubota ,  Yoshihiko Nagata

    发明人： Meguru Kashida ,  Yoshihiro Kubota ,  Yoshihiko Nagata

    IPC分类号： G03F1/22

    CPC分类号： G03F1/22 ,  Y10S430/167

    摘要： An X-ray transmitting homogeneous membrane suitable for use in a mask for X-ray lithography is disclosed which compositely consists of silicon carbide and silicon nitride in a specified molar proportion. The membrane can be prepared by depositing a film of a homogeneous composite of silicon carbide and silicon nitride on a silicon wafer as a substrate by sputering using a target which is also a sintered composite material of silicon carbide and silicon nitride. As compared with membranes of silicon carbide alone or silicon nitride alone, the inventive membrane is advantageous in respect of the high resistance against high-energy irradiation, chemicals and moisture as well as in respect of high visible-light transmission, especially, when the tensile stress within the membrane is in a specified range.

    摘要翻译： 公开了一种适合用于X射线光刻掩模的X射线透射均匀膜，其特定摩尔比例由碳化硅和氮化硅组成。 可以通过使用也是碳化硅和氮化硅的烧结复合材料的靶进行喷射，通过在硅晶片上沉积碳化硅和氮化硅的均匀复合材料的膜来制备膜。 与单独的碳化硅单独的膜或单独的氮化硅的膜相比，本发明的膜在高能量照射，化学品和水分以及高可见光透射方面是有利的，特别是当拉伸 膜内的应力在规定的范围内。

    Silicon carbide membrane for X-ray lithography and method for the prepartion thereof
    35.
    发明授权
    Silicon carbide membrane for X-ray lithography and method for the prepartion thereof 失效
    用于X射线光刻的硅碳膜及其制备方法

    公开(公告)号：US5089085A

    公开(公告)日：1992-02-18

    申请号：US633047

    申请日：1990-12-21

    申请人： Meguru Kashida ,  Yoshihiro Kubota ,  Yoshihiko Nagata

    发明人： Meguru Kashida ,  Yoshihiro Kubota ,  Yoshihiko Nagata

    IPC分类号： G03F1/22 ,  G03F1/68 ,  H01L21/027

    CPC分类号： G03F1/22

    摘要： The inventive method provides a silicon carbide membrane for X-ray lithography having high performance in respect of stability against high energy beam irradiation. The method comprises depositing a silicon carbide film by sputtering on a silicon wafer as the substrate under such conditions that the thus deposited film is under a tensile stress in a specified range by keeping the substrate at a temperature higher than 500.degree. C. The thus deposited silicon carbide film is at least partly crystalline and the crystallinity thereof can be defined by the sharpness of a peak in the X-ray diffraction diagram of the membrane which can be assigned to the (1 1 1) plane of the crystalline silicon carbide.