公开(公告)号：US09065757B2

公开(公告)日：2015-06-23

申请号：US13813112

申请日：2011-07-29

Applicant: Liu Yang ,  Haifeng Zhao

Inventor： Liu Yang ,  Haifeng Zhao

IPC: H04L12/28 ,  H04L12/707 ,  H04L12/751 ,  H04L12/703

CPC classification number: H04L45/22 ,  H04L45/02 ,  H04L45/28

Abstract: A method for routing switch is disclosed. The method comprises: when a network device forwards traffic through N equal-cost multi-path (ECMP) routes to a destination, if M of these routes are inactive, then for each inactive route, determining an alternative route for replacing the inactive route from N-M active routes, and modifying the inactive route to the alternative route so as to switch the traffic of the inactive route onto the alternative route, wherein N and M are positive integer numbers, with N being greater than or equal to 2 and M being greater than or equal to 1 and smaller than N.

Abstract translation: 公开了路由交换机的方法。 该方法包括：当网络设备通过N个等价多路径（ECMP）路由将流量转发到目的地时，如果这些路由的M不活跃，则对于每个非活动路由，确定用于替换不活动路由的替代路由 NM活动路由，并修改到替代路由的不活动路由，以将非活动路由的业务切换到替代路由，其中​​N和M是正整数，其中N大于或等于2，并且M更大 大于等于1且小于N.

公开(公告)号：US20150043055A1

公开(公告)日：2015-02-12

申请号：US14364183

申请日：2012-09-04

Applicant: Liu Yang ,  Meng Wang ,  Zhilin Yuan ,  Rui Yang ,  Lidan Song ,  Liping Sun ,  Jinping Guo ,  Dingkang Chen ,  Yuhong Ma ,  Lihong Tang

Inventor： Liu Yang ,  Meng Wang ,  Zhilin Yuan ,  Rui Yang ,  Lidan Song ,  Liping Sun ,  Jinping Guo ,  Dingkang Chen ,  Yuhong Ma ,  Lihong Tang

IPC: G02B6/35 ,  B32B41/00 ,  G02F1/29 ,  G02B6/32

CPC classification number: G02B7/008 ,  B32B41/00 ,  G02B7/181 ,  G02B26/0816 ,  G02F1/29 ,  H04J14/0212 ,  H04Q2011/003

Abstract: A method for compensating for a wavelength shift in a wavelength selective switch (WSS), and a device therefor. The device comprises a fixed seat (301) as well as a rotation beam (304) and a compensation block (302) that have different thermal expansion amounts, the rotation beam (304) and the compensation block (302) being fixedly adhered to the fixed seat (301). In the method, a combined structure of the rotation beam (304) and the compensation block (302) with different thermal expansion amounts is adopted; the combined structure rotates by means of different expansion amounts generated by the rotation beam (304) and the compensation block (302) at the same external temperature, and further drives an optical element of the WSS to rotate, hence compensating for a wavelength shift of the WSS. The method is safe and reliable; the device has a simple structure, and is convenient to encapsulate, is applicable to various WSS optical paths, and does not affect advantages of the optical path structure of the WSS.

Abstract translation: 一种用于补偿波长选择开关（WSS）中的波长偏移的方法及其装置。 该装置包括固定座（301）以及具有不同热膨胀量的旋转梁（304）和补偿块（302），旋转梁（304）和补偿块（302）被固定地粘附到 固定座（301）。 在该方法中，采用具有不同热膨胀量的旋转梁（304）和补偿块（302）的组合结构。 组合结构通过在相同外部温度下由旋转光束（304）和补偿块（302）产生的不同膨胀量而旋转，并进一步驱动WSS的光学元件旋转，因此补偿波长偏移 WSS。 方法安全可靠; 该器件结构简单，封装方便，适用于各种WSS光路，不影响WSS光路结构的优点。

公开(公告)号：US08765223B2

公开(公告)日：2014-07-01

申请号：US12425821

申请日：2009-04-17

Applicant: Manchao Xiao ,  Liu Yang

Inventor： Manchao Xiao ,  Liu Yang

IPC: C01B19/00 ,  C23C16/08 ,  C23C16/16 ,  C23C16/18 ,  C07F7/08 ,  C07F7/30

CPC classification number: C23C16/305 ,  C23C16/45553

Abstract: This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Abstract translation: 本发明公开了使用化学气相沉积（CVD）工艺，原子层沉积（ALD）工艺或湿法工艺的金属硫族化合物的合成。 有机甲硅烷基碲或有机甲硅烷基硒与一系列具有亲核取代基的金属化合物的配体交换反应产生金属硫族化物。 该化学物质用于沉积锗 - 锑碲（GeSbTe）和锗 - 锑 - 硒（GeSbSe）膜或其他碲和硒基金属化合物用于相变记忆和光伏器件。

公开(公告)号：US20140086490A1

公开(公告)日：2014-03-27

申请号：US13625962

申请日：2012-09-25

Applicant: Qiang Li ,  Bin Wang ,  Liu Yang

Inventor： Qiang Li ,  Bin Wang ,  Liu Yang

IPC: G06K9/46

CPC classification number: G06K9/46

Abstract: Techniques for improved feature detection are described. In one embodiment, for example, a device may include a processor circuit and a feature detection module, and the feature detection module may be operative on the processor circuit to perform a first feature detection iteration for a graphics information element using an integral pixel value array, determine a scaling factor, recalculate the integral pixel value array based on the scaling factor, and perform a second feature detection iteration for the graphics information element using the recalculated integral pixel value array. Other embodiments are described and claimed.

Abstract translation: 描述了用于改进特征检测的技术。 在一个实施例中，例如，设备可以包括处理器电路和特征检测模块，并且特征检测模块可以在处理器电路上操作，以使用积分像素值阵列来执行图形信息元素的第一特征检测迭代 确定缩放因子，基于缩放因子重新计算积分像素值阵列，并且使用重新计算的积分像素值阵列对图形信息元素执行第二特征检测迭代。 描述和要求保护其他实施例。

公开(公告)号：US08563353B2

公开(公告)日：2013-10-22

申请号：US13466275

申请日：2012-05-08

Applicant: Manchao Xiao ,  Liu Yang ,  Xinjian Lei ,  Iain Buchanan

Inventor： Manchao Xiao ,  Liu Yang ,  Xinjian Lei ,  Iain Buchanan

IPC: H01L21/00 ,  H01L21/06 ,  H01L21/469

CPC classification number: H01L21/06 ,  C23C18/1204 ,  C23C18/1225 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/0322 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1608 ,  Y02E10/541

Abstract: Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Abstract translation: 本文描述了一种用于沉积多组分膜的方法和基于液体的前体组合物。 在一个实施方案中，本文所述的方法和组合物用于沉积锗碲（GeTe），锑碲（SbTe），锑锗（SbGe），锗锑碲（GST），铟锑碲（IST），银铟锑碲 （AIST），碲化镉（CdTe），硒化镉（CdSe），碲化锌（ZnTe），硒化锌（ZnSe），铜铟镓硒（CIGS）膜或其他用于相变记忆和光伏的碲和硒基金属化合物 设备。

公开(公告)号：US20130169657A1

公开(公告)日：2013-07-04

申请号：US13808801

申请日：2011-07-06

Applicant: Bruno Levy ,  Liu Yang

Inventor： Bruno Levy ,  Liu Yang

IPC: G06T11/60

CPC classification number: G06T11/60 ,  G06T17/20 ,  G06T17/205

Abstract: Device for aiding the production of a mesh, includes storing first numerical data defining a surface to be processed, a partitioner calculating three-dimensional work cells given initial points, each work cell associated with a point in space, a tiling tool actuating the partitioner with a first set of initial points, defined with respect to the surface, so as to obtain a first set of work cells, an evaluator calculating a cumulative quantity representing the sum of the moments of the points of the work cells with respect to their associated points, and an optimizer iteratively actuating the tiling tool and the evaluator with a set of initial points drawn from the previous sets, according to a rule calculated to minimize said cumulative quantity. The moments are determined by a chosen nonnative function, of order higher than or equal to two and/or according to an adaptation matrix representing an anisotropy field.

Abstract translation: 用于协助生产网格的设备包括存储定义要处理的表面的第一数字数据，分配器计算给定初始点的三维工作单元，与空间点相关联的每个工作单元，启动分隔器的平铺工具， 相对于表面定义的第一组初始点，以便获得第一组工作单元，评估者计算表示工作单元的点相对于其相关点的时刻之和的累积量 并且优化器根据计算出的最小化所述累积量的规则，迭代地使用来自先前集合的一组初始点来激活平铺工具和评估器。 力矩由选择的非相关函数确定，阶数高于或等于2，和/或根据表示各向异性场的适应矩阵确定。

公开(公告)号：US08280206B2

公开(公告)日：2012-10-02

申请号：US12643922

申请日：2009-12-21

Applicant: Qianggao Hu ,  Liping Sun ,  Liu Yang ,  Zhilin Yuan ,  Hui Xie ,  Rui Yang

Inventor： Qianggao Hu ,  Liping Sun ,  Liu Yang ,  Zhilin Yuan ,  Hui Xie ,  Rui Yang

IPC: G02B6/35 ,  G02B6/26 ,  G02B6/28

CPC classification number: G02B6/29395 ,  G02B6/3594

Abstract: A wavelength selective switch (WSS) with hitless switching. The WSS includes the fiber collimator array, the focusing lens, collimating lens, diffraction grating, focusing lens, and attenuation reflection unit array. Each attenuation reflection unit has an interconnected transmission-type MEMS attenuator and a one-dimension MEMS reflector. The transmission-type MEMS attenuator is positioned in the front of the one-dimension MEMS reflector. The central axis of the transmission-type MEMS attenuator aligns and coincides with that of the one-dimension MEMS reflector, with the two central axes being glued together. The WSS of the present invention effectively utilizes the combination of a one-dimension reflector array and a transmission-type optical attenuator chip. With the use of one-dimension reflector array, instead of the known two-dimension reflector array, the complexity of design and manufacture is greatly reduced, thereby reducing the production costs of the switch.

Abstract translation: 具有无间断切换的波长选择开关（WSS）。 WSS包括光纤准直器阵列，聚焦透镜，准直透镜，衍射光栅，聚焦透镜和衰减反射单元阵列。 每个衰减反射单元具有互连的透射型MEMS衰减器和一维MEMS反射器。 传输型MEMS衰减器位于一维MEMS反射器的前面。 传输型MEMS衰减器的中心轴与一维MEMS反射器的中心轴对准并重合，两个中心轴被粘合在一起。 本发明的WSS有效地利用了一维反射器阵列和透射型光衰减器芯片的组合。 使用一维反射器阵列，而不是已知的二维反射器阵列，大大降低了设计和制造的复杂性，从而降低了开关的生产成本。

公开(公告)号：US20120148745A1

公开(公告)日：2012-06-14

申请号：US12964266

申请日：2010-12-09

Applicant: Manchao Xiao ,  Liu Yang ,  Kirk Scott Cuthill ,  Heather Regina Bowen ,  Bing Han ,  Mark Leonard O'Neill

Inventor： Manchao Xiao ,  Liu Yang ,  Kirk Scott Cuthill ,  Heather Regina Bowen ,  Bing Han ,  Mark Leonard O'Neill

IPC: C23C16/40 ,  C23C16/44

CPC classification number: C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228

Abstract: This invention related to method to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of: R1nR2mSi(NR3R4)4-n-m; and, a cyclic silazane of (R1R2SiNR3)p, where R1 is an alkenyl or an aromatic, such as vinyl, allyl, and phenyl; R2, R3, and R4 are selected from H, alkyl with C1-C10, linear, branched, or cyclic, an alkenyl with C2-C10 linear, branched, or cyclic, and aromatic; n=1-3, m=0-2; p=3-4.

Abstract translation: 本发明涉及使用热CVD法，ALD法或循环CVD法在HF溶液中具有非常低的湿蚀刻速率的二氧化硅膜的方法，其中硅前体选自以下之一：R1nR2mSi（NR3R4）4-nm ; 和（R 1 R 2 SiNR 3）p的环状硅氮烷，其中R 1是烯基或芳族，例如乙烯基，烯丙基和苯基; R2，R3和R4选自H为具有C1-C10，直链，支链或环状的烷基，具有C2-C10直链，支链或环状和芳族的烯基; n = 1-3，m = 0-2; p = 3-4。

公开(公告)号：US20110313048A1

公开(公告)日：2011-12-22

申请号：US13163224

申请日：2011-06-17

Applicant: Liu Yang ,  Valerio DiTizio

Inventor： Liu Yang ,  Valerio DiTizio

IPC: A61K31/155 ,  G01N33/00 ,  A61P31/02

CPC classification number: A61K31/155 ,  A61K33/38 ,  A61K45/06 ,  A61L2/232 ,  A61L15/44 ,  A61L15/46 ,  A61L15/60 ,  A61L26/0066 ,  A61L26/008 ,  A61L2300/104 ,  A61L2300/206 ,  A61L2300/404 ,  A61L2300/442 ,  A61K2300/00 ,  C08L83/04

Abstract: Antimicrobial silicone-based dressings, such as wound dressings, are disclosed. An example dressing comprises a transparent and self-adhesive gel sheet cured from a liquid containing silicone, the sheet having dispersed therein (i) particulates of a chlorhexidine compound that is not soluble in the liquid; and (ii) at least one other antimicrobial. Methods of making the silicone-based dressings and methods of use are also disclosed.

Abstract translation: 公开了抗菌硅酮敷料，如伤口敷料。 实例敷料包括从含有硅酮的液体固化的透明和自粘凝胶片，其中分散有片材（i）不溶于液体的洗必太化合物的颗粒; 和（ii）至少一种其它抗微生物剂。 还公开了制备硅酮基敷料和使用方法的方法。

公开(公告)号：US20110215445A1

公开(公告)日：2011-09-08

申请号：US13015720

申请日：2011-01-28

Applicant: Liu Yang ,  Manchao Xiao ,  Bing Han ,  Kirk S. Cuthill ,  Mark L. O'Neill

Inventor： Liu Yang ,  Manchao Xiao ,  Bing Han ,  Kirk S. Cuthill ,  Mark L. O'Neill

IPC: H01L21/316 ,  H01L29/00 ,  C23C16/30 ,  C23C16/44 ,  C09D183/04 ,  C07F7/02 ,  B01J19/00

CPC classification number: H01L21/02216 ,  B01J19/00 ,  C07F7/02 ,  C09D183/04 ,  C23C16/30 ,  C23C16/44 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/316 ,  H01L29/00

Abstract: Described herein are methods of forming dielectric films comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.

Abstract translation: 本文描述了形成包括硅，氧化物和任选的氮，碳，氢和硼的介电膜的方法。 本文还公开了在待加工物体上形成介电膜或涂层的方法，例如半导体晶片。