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公开(公告)号:US20250079405A1
公开(公告)日:2025-03-06
申请号:US18951102
申请日:2024-11-18
Applicant: Micron Technology, Inc.
Inventor: Kelvin Tan Aik Boo , Hong Wan Ng , Seng Kim Ye , Chin Hui Chong
IPC: H01L25/065 , H01L25/00
Abstract: Semiconductor devices having three-dimensional bonding schemes and associated systems and methods are disclosed herein. In some embodiments, the semiconductor device includes a package substrate, a stack of semiconductor dies carried by the package substrate, and an interconnect module carried by the package substrate adjacent the stack of semiconductor dies. The stack of semiconductor dies can include a first die carried by the package substrate and a second die carried by the first die. Meanwhile, the interconnect module can include at least a first tier and a second tier. The first tier can be carried by and electrically coupled to the package substrate, and the second tier can be carried by and electrically coupled to the first tier. In turn, the second die can be electrically coupled to the second tier.
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公开(公告)号:US12243807B2
公开(公告)日:2025-03-04
申请号:US18398120
申请日:2023-12-27
Applicant: Micron Technology, Inc.
Inventor: Hong Wan Ng , Chin Hui Chong , Hem P. Takiar , Seng Kim Ye , Kelvin Tan Aik Boo
Abstract: Substrates for semiconductor packages, including hybrid substrates for decoupling capacitors, and associated devices, systems, and methods are disclosed herein. In one embodiment, a substrate includes a first pair and a second pair of electrical contacts on a first surface of the substrate. The first pair of electrical contacts can be configured to receive a first surface-mount capacitor, and the second pair of electrical contacts can be configured to receive a second surface-mount capacitor. The first pair of electrical contacts can be spaced apart by a first space, and the second pair of electrical contacts can be spaced apart by a second space. The first and second spaces can correspond to corresponding to first and second distances between electrical contacts of the first and second surface-mount capacitors.
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33.
公开(公告)号:US20240404995A1
公开(公告)日:2024-12-05
申请号:US18646688
申请日:2024-04-25
Applicant: Micron Technology, Inc.
Inventor: Chin Hui Chong , Hong Wan Ng , See Hiong Leow , Ling Pan , Seng Kim Ye , Kelvin Tan Aik Boo
IPC: H01L25/065 , H01L25/00 , H05K1/02 , H10B80/00
Abstract: An apparatus includes selectable a circuit placement mechanism configured to support two or more different circuit layouts. The circuit placement mechanism may include an overlap of electrical connections associated with the two or more circuit layouts and joined through an etch back selector. The etch back selector may enable the apparatus to function according to a selected one of the two or more different circuit layouts.
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公开(公告)号:US20240203963A1
公开(公告)日:2024-06-20
申请号:US18588595
申请日:2024-02-27
Applicant: Micron Technology, Inc.
Inventor: Hong Wan Ng , Kelvin Tan Aik Boo , Chin Hui Chong , Hem P. Takiar , Seng Kim Ye
IPC: H01L25/16 , H01L21/56 , H01L23/31 , H01L25/00 , H01L25/065
CPC classification number: H01L25/16 , H01L21/563 , H01L23/3192 , H01L25/0657 , H01L25/50 , H01L28/40
Abstract: Semiconductor devices and associated systems and methods are disclosed herein. In some embodiments, the semiconductor device is an assembly that includes a package substrate having a front side and a backside opposite the front side. A controller die with a first longitudinal footprint can be attached to the front side of the package substrate. A passive electrical component is also attached to the front side of the package substrate. A stack of semiconductor dies can be attached to the controller die and the passive electrical component. The stack of semiconductor dies has a second longitudinal footprint greater than the first longitudinal footprint in at least one dimension. The controller die and the passive electrical component are positioned at least partially within the second longitudinal footprint, thereby at least partially supporting the stack of semiconductor dies.
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公开(公告)号:US20240128163A1
公开(公告)日:2024-04-18
申请号:US18398120
申请日:2023-12-27
Applicant: Micron Technology, Inc.
Inventor: Hong Wan Ng , Chin Hui Chong , Hem P. Takiar , Seng Kim Ye , Kelvin Tan Aik Boo
IPC: H01L23/48 , H01L23/498 , H01L27/08
CPC classification number: H01L23/481 , H01L23/49816 , H01L27/0805 , H01L28/40
Abstract: Substrates for semiconductor packages, including hybrid substrates for decoupling capacitors, and associated devices, systems, and methods are disclosed herein. In one embodiment, a substrate includes a first pair and a second pair of electrical contacts on a first surface of the substrate. The first pair of electrical contacts can be configured to receive a first surface-mount capacitor, and the second pair of electrical contacts can be configured to receive a second surface-mount capacitor. The first pair of electrical contacts can be spaced apart by a first space, and the second pair of electrical contacts can be spaced apart by a second space. The first and second spaces can correspond to corresponding to first and second distances between electrical contacts of the first and second surface-mount capacitors.
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公开(公告)号:US11942460B2
公开(公告)日:2024-03-26
申请号:US17137085
申请日:2020-12-29
Applicant: Micron Technology, Inc.
Inventor: Hong Wan Ng , Kelvin Tan Aik Boo , Chin Hui Chong , Hem P. Takiar , Seng Kim Ye
CPC classification number: H01L25/16 , H01L21/563 , H01L23/3192 , H01L25/0657 , H01L25/50 , H01L28/40
Abstract: Semiconductor devices and associated systems and methods are disclosed herein. In some embodiments, the semiconductor device is an assembly that includes a package substrate having a front side and a backside opposite the front side. A controller die with a first longitudinal footprint can be attached to the front side of the package substrate. A passive electrical component is also attached to the front side of the package substrate. A stack of semiconductor dies can be attached to the controller die and the passive electrical component. The stack of semiconductor dies has a second longitudinal footprint greater than the first longitudinal footprint in at least one dimension. The controller die and the passive electrical component are positioned at least partially within the second longitudinal footprint, thereby at least partially supporting the stack of semiconductor dies.
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公开(公告)号:US20240071886A1
公开(公告)日:2024-02-29
申请号:US17823349
申请日:2022-08-30
Applicant: Micron Technology, Inc.
Inventor: Hong Wan Ng , Seng Kim Ye , Kelvin Aik Boo Tan , Chin Hui Chong
IPC: H01L23/498 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/29 , H01L23/31 , H01L25/065
CPC classification number: H01L23/49838 , H01L21/4846 , H01L21/563 , H01L23/293 , H01L23/3107 , H01L23/49866 , H01L24/16 , H01L24/48 , H01L24/73 , H01L25/0652 , H01L2224/16225 , H01L2224/48225 , H01L2224/73207 , H01L2224/73257 , H01L2924/1433 , H01L2924/1436 , H01L2924/1438 , H01L2924/182 , H01L2924/186 , H01L2924/35121
Abstract: Methods, systems, and devices for multi-chip package with enhanced conductive layer adhesion are described. In some examples, a conductive layer (e.g., a conductive trace) may be formed above a substrate. An integrated circuit may be bonded to the conductive layer and an encapsulant may be deposited at least between the integrated circuit and the conductive layer. In some examples, one or more surface features or one or more recesses may be formed on or within the conductive layer and the encapsulant may adhere to the surface features or recesses.
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公开(公告)号:US20230345639A1
公开(公告)日:2023-10-26
申请号:US18215711
申请日:2023-06-28
Applicant: Micron Technology, Inc.
Inventor: Kelvin Tan Aik Boo , Chin Hui Chong , Seng Kim Ye , Hong Wan Ng , Hem P. Takiar
IPC: H01L23/498 , H01L25/065 , H05K1/18 , H01L23/13 , H01L23/64
CPC classification number: H05K1/183 , H01L23/13 , H01L23/49822 , H01L23/49838 , H01L23/642 , H01L25/0657 , H05K1/181 , H01L23/49816 , H05K2201/10015 , H05K2201/10159
Abstract: An apparatus includes a primary layer of a substrate. The apparatus includes a secondary layer of the substrate having a first open area that extends through the secondary layer to an inner layer of the substrate. The apparatus includes the inner layer of the substrate that is positioned between the primary layer and the secondary layer. The inner layer includes first component bond pads that are disposed on the inner layer and that are exposed via the first open area of the secondary layer.
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公开(公告)号:US20230069476A1
公开(公告)日:2023-03-02
申请号:US17592065
申请日:2022-02-03
Applicant: Micron Technology, Inc.
Inventor: Kelvin Tan Aik Boo , Hong Wan Ng , Seng Kim Ye , Chin Hui Chong
IPC: H01L25/065 , H01L25/00
Abstract: Semiconductor devices having three-dimensional bonding schemes and associated systems and methods are disclosed herein. In some embodiments, the semiconductor device includes a package substrate, a stack of semiconductor dies carried by the package substrate, and an interconnect module carried by the package substrate adjacent the stack of semiconductor dies. The stack of semiconductor dies can include a first die carried by the package substrate and a second die carried by the first die. Meanwhile, the interconnect module can include at least a first tier and a second tier. The first tier can be carried by and electrically coupled to the package substrate, and the second tier can be carried by and electrically coupled to the first tier. In turn, the second die can be electrically coupled to the second tier.
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公开(公告)号:US20220352052A1
公开(公告)日:2022-11-03
申请号:US17243466
申请日:2021-04-28
Applicant: Micron Technology, Inc.
Inventor: Hong Wan Ng , Chin Hui Chong , Hem P. Takiar , Seng Kim Ye , Kelvin Tan Aik Boo
IPC: H01L23/48 , H01L23/498 , H01L49/02 , H01L27/08
Abstract: Substrates for semiconductor packages, including hybrid substrates for decoupling capacitors, and associated devices, systems, and methods are disclosed herein. In one embodiment, a substrate includes a first pair and a second of electrical contacts on a first surface of the substrate. The first pair of electrical contacts can be configured to receive a first surface-mount capacitor, and the second pair of electrical contacts can be configured to receive a second surface-mount capacitor. The first pair of electrical contacts can be spaced apart by a first space, and the second pair of electrical contacts can be spaced apart by a second space. The first and second spaces can correspond to corresponding to first and second distances between electrical contacts of first and second surface-mount capacitors.
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