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    SEMICONDUCTOR DEVICE STRUCTURES INCLUDING METAL OXIDE STRUCTURES, AND RELATED METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES
    31.
    发明申请
    SEMICONDUCTOR DEVICE STRUCTURES INCLUDING METAL OXIDE STRUCTURES, AND RELATED METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES 有权
    包括金属氧化物结构的半导体器件结构以及形成半导体器件结构的相关方法

    公开(公告)号：US20140151843A1

    公开(公告)日：2014-06-05

    申请号：US14176574

    申请日：2014-02-10

    Applicant: Micron Technology, Inc.

    Inventor： Dan B. Millward ,  Timothy A. Quick ,  J. Neil Greeley

    IPC: H01L29/06 ,  H01L21/28

    CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C08L53/005 ,  C09D153/00 ,  C09D153/005 ,  G03F7/0002 ,  H01L21/02323 ,  H01L21/28 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/89 ,  C08L2666/02

    Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

    Abstract translation: 使用配制用于自组装的嵌段共聚物体系形成金属氧化物结构的方法和在基材上形成金属氧化物图案的方法。 至少在衬底中的沟槽内并且包括至少一个可溶性嵌段和至少一个不溶性嵌段的嵌段共聚物可以被退火以形成自组装图案，其包括多个与所述至少一个可溶嵌段的重复单元横向对准 并且定位在所述至少一个不溶性块的基质内。 自组装图案可以暴露于浸渍至少一个可溶性嵌段的金属氧化物前体。 金属氧化物前体可以被氧化以形成金属氧化物。 可以去除自组装图案以在衬底表面上形成金属氧化物线的图案。 还描述了半导体器件结构。

    METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES INCLUDING METAL OXIDE STRUCTURES
    38.
    发明申请
    METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES INCLUDING METAL OXIDE STRUCTURES 有权
    形成包含金属氧化物结构的半导体器件结构的方法

    公开(公告)号：US20160163536A1

    公开(公告)日：2016-06-09

    申请号：US15044713

    申请日：2016-02-16

    Applicant: Micron Technology, Inc.

    Inventor： Dan B. Millward ,  Timothy A. Quick ,  J. Neil Greeley

    IPC: H01L21/027 ,  H01L21/02

    CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C08L53/005 ,  C09D153/00 ,  C09D153/005 ,  G03F7/0002 ,  H01L21/02323 ,  H01L21/28 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/89 ,  C08L2666/02

    Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

    Abstract translation: 使用配制用于自组装的嵌段共聚物体系形成金属氧化物结构的方法和在基材上形成金属氧化物图案的方法。 至少在衬底中的沟槽内并且包括至少一个可溶性嵌段和至少一个不溶性嵌段的嵌段共聚物可以被退火以形成自组装图案，其包括多个与所述至少一个可溶嵌段的重复单元横向对准 并且定位在所述至少一个不溶性块的基质内。 自组装图案可以暴露于浸渍至少一个可溶性嵌段的金属氧化物前体。 金属氧化物前体可以被氧化以形成金属氧化物。 可以去除自组装图案以在衬底表面上形成金属氧化物线的图案。 还描述了半导体器件结构。

    SEMICONDUCTOR DEVICE STRUCTURES INCLUDING A RECTILINEAR ARRAY OF OPENINGS
    40.
    发明申请
    SEMICONDUCTOR DEVICE STRUCTURES INCLUDING A RECTILINEAR ARRAY OF OPENINGS 审中-公开
    半导体器件结构，包括一个最新的开放阵列

    公开(公告)号：US20150303255A1

    公开(公告)日：2015-10-22

    申请号：US14789297

    申请日：2015-07-01

    Applicant: Micron Technology, Inc.

    Inventor： Dan B. Millward

    IPC: H01L29/06 ,  H01L21/308

    CPC classification number: H01L29/0657 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/76816 ,  H01L27/10888

    Abstract: A method of forming an array of openings in a substrate. The method comprises forming a template structure comprising a plurality of parallel features and a plurality of additional parallel features perpendicularly intersecting the plurality of additional parallel features of the plurality over a substrate to define wells, each of the plurality of parallel features having substantially the same dimensions and relative spacing as each of the plurality of additional parallel features. A block copolymer material is formed in each of the wells. The block copolymer material is processed to form a patterned polymer material defining a pattern of openings. The pattern of openings is transferred to the substrate to form an array of openings in the substrate. A method of forming a semiconductor device structure, and a semiconductor device structure are also described.

    Abstract translation: 一种在衬底中形成开口阵列的方法。 该方法包括形成模板结构，该模板结构包括多个平行特征以及与衬底上的多个附加平行特征垂直相交的多个附加平行特征以限定孔，多个平行特征中的每一个具有基本相同的尺寸 以及作为多个附加平行特征中的每一个的相对间隔。 在每个孔中形成嵌段共聚物材料。 处理嵌段共聚物材料以形成限定开口图案的图案化聚合物材料。 开口的图案被转移到基板上以在基板中形成开口阵列。 还描述了形成半导体器件结构的方法和半导体器件结构。

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