公开(公告)号：US06468663B1

公开(公告)日：2002-10-22

申请号：US09690982

申请日：2000-10-18

申请人： Nobuhiko Sato ,  Takao Yonehara

发明人： Nobuhiko Sato ,  Takao Yonehara

IPC分类号： B32B1304

CPC分类号： H01L21/02667 ,  H01L21/0203 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/76251 ,  H01L21/76256 ,  Y10S438/974 ,  Y10T428/31663

摘要： A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocrystalline silicon layer on the porous layer; bonding the surface of the nonporous monocrystalline silicon layer onto a second substrate with interposition of an insulating layer; and etching off selectively the porous layer by use of a chemical etching solution.

摘要翻译： 制造半导体衬底的方法包括以下步骤：在包括单晶硅的第一衬底中形成多孔层; 在多孔层的孔的侧壁上形成保护膜; 在多孔层上形成无孔单晶硅层; 将无孔单晶硅层的表面粘合到具有绝缘层的第二衬底上; 并通过使用化学蚀刻溶液选择性地蚀刻多孔层。

公开(公告)号：US06413874B1

公开(公告)日：2002-07-02

申请号：US09217130

申请日：1998-12-21

申请人： Nobuhiko Sato

发明人： Nobuhiko Sato

IPC分类号： H01L21302

CPC分类号： H01L21/2007 ,  H01L21/30604 ,  H01L21/76254 ,  H01L21/76256

摘要： With a method according to the invention, a semiconductor article such as an SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is etched by heat treatment in a hydrogen-containing reducing atmosphere in order to remove the surface by a desired height and smooth it. The method is characterized in that the single crystal silicon film is arranged opposite to silicon oxide in a furnace during the etching process.

摘要翻译： 利用根据本发明的方法，通过在含氢还原气氛中进行热处理，蚀刻在其表面上形成绝缘体上的单晶硅膜的SOI衬底等半导体产品，以便通过在 所需的高度和光滑。 该方法的特征在于，在蚀刻工艺期间，单晶硅膜在炉中与氧化硅相对地布置。

公开(公告)号：US6143629A

公开(公告)日：2000-11-07

申请号：US389361

申请日：1999-09-03

申请人： Nobuhiko Sato

发明人： Nobuhiko Sato

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/3063 ,  H01L21/762 ,  H01L21/30

CPC分类号： H01L21/76262 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3063

摘要： In a process for producing a semiconductor substrate, comprising sealing surface pores of a porous silicon layer and thereafter forming a single-crystal layer on the porous silicon layer by epitaxial growth, intermediate heat treatment is carried out after the sealing and before the epitaxial growth and at a temperature higher than the temperature at the time of the sealing. This process improves crystal quality of the semiconductor substrate having the single-crystal layer formed by epitaxial growth and improves smoothness at the bonding interface when applied to bonded wafers this process enables the detection of the smaller particles on the surface by a laser light scattering method.

摘要翻译： 在制造半导体衬底的方法中，包括密封多孔硅层的表面孔，然后通过外延生长在多孔硅层上形成单晶层，在密封之后和外延生长之前进行中间热处理， 在高于密封时的温度的温度下。 该工艺提高了具有通过外延生长形成的单晶层的半导体衬底的晶体质量，并且当应用于接合晶片时，提高了接合界面处的平滑度，该工艺能够通过激光散射法检测表面上的较小颗粒。

公开(公告)号：US5825993A

公开(公告)日：1998-10-20

申请号：US917100

申请日：1997-08-25

申请人： Akihiro Shimura ,  Satoshi Nagata ,  Yoshifumi Okamoto ,  Tetsuya Morita ,  Shunya Mitsuhashi ,  Nobuhiko Sato ,  Takanori Nishijima ,  Masaki Unishi

发明人： Akihiro Shimura ,  Satoshi Nagata ,  Yoshifumi Okamoto ,  Tetsuya Morita ,  Shunya Mitsuhashi ,  Nobuhiko Sato ,  Takanori Nishijima ,  Masaki Unishi

IPC分类号： B41J5/30 ,  B41J29/38 ,  G06F3/12 ,  G06K15/00

CPC分类号： G06K15/00 ,  G06F3/1296 ,  G06K15/1823 ,  G06K15/1863 ,  G06K2215/0017 ,  G06K2215/0062

摘要： An information processing apparatus comprises acquiring means for acquiring a memory capacity of a printer connected through a bi-directional interface, compare means for comparing the memory capacity acquired by the acquiring means with a capacity of data to be outputted to the printer, and determination means for determining a memory size of a memory of the printer in accordance with the comparison result. An output apparatus comprises receiving means for receiving memory size information determined by a capacity of data to be outputted from an information processing apparatus connected through a bi-directional interface and a capacity of a memory for storing the data, from the information processing apparatus, and setting means for dynamically setting a size of the memory for storing the data in accordance with the memory size information received by the receiving means.

摘要翻译： 一种信息处理装置，包括：获取装置，用于获取通过双向接口连接的打印机的存储容量;比较装置，用于将获取装置获取的存储容量与要输出到打印机的数据的容量进行比较;以及确定装置 用于根据比较结果确定打印机的存储器的存储器大小。 输出装置包括：接收装置，用于从信息处理装置接收由通过双向接口连接的信息处理装置输出的数据的容量和用于存储数据的存储器的容量确定的存储器大小信息;以及 设置装置，用于根据由接收装置接收的存储器尺寸信息动态地设置用于存储数据的存储器的大小。

公开(公告)号：US5727134A

公开(公告)日：1998-03-10

申请号：US386341

申请日：1995-02-10

申请人： Yuichi Higuchi ,  Nobuhiko Sato

发明人： Yuichi Higuchi ,  Nobuhiko Sato

IPC分类号： G06F3/12 ,  G06K15/00 ,  G06F15/00 ,  H04N1/40

CPC分类号： G06F3/1293 ,  G06K15/00 ,  G06K2215/0005 ,  G06K2215/0082

摘要： An output apparatus processes data input selectively from a plurality of host computers and outputs a data processing state. The output apparatus includes an input structure that inputs data selectively from the plurality of host computers, a discriminating device that discriminates from which one of the plurality of host computers the input data is supplied, and an informing device for informing an operator of the output apparatus of the data processing state of the output apparatus in response to a discrimination by the discriminating device. An output method performs the operations of the output apparatus, and can be performed by using a memory medium that stores a program used in a programmable output apparatus. The output apparatus may use a host interface, or a plurality of host interfaces, for the input structure.

摘要翻译： 输出装置处理从多台主机选择性输入的数据，并输出数据处理状态。 输出装置包括从多个主计算机选择性地输入数据的输入结构，识别多个主计算机中的哪个主计算机提供输入数据的识别装置，以及用于向输出装置通知操作者的通知装置 响应于识别装置的鉴别，输出装置的数据处理状态。 输出方法执行输出装置的操作，并且可以通过使用存储在可编程输出装置中使用的程序的存储介质来执行。 输出装置可以使用用于输入结构的主机接口或多个主机接口。

公开(公告)号：US5363793A

公开(公告)日：1994-11-15

申请号：US100188

申请日：1993-08-02

申请人： Nobuhiko Sato

发明人： Nobuhiko Sato

IPC分类号： C30B25/18 ,  H01L21/20 ,  C30B25/02

CPC分类号： C30B25/18 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02645 ,  Y10S117/902

摘要： A method of forming crystals is adapted to grow a single-crystal by subjecting a substrate having a free surface with mutually adjacent non-nucleation and nucleation surfaces to a crystal forming process. Each nucleation surface consists of an amorphous material, having a greater nucleation density than the non-nucleation surface, with respect to a material with which the single-crystal will be formed, and having an area sufficiently small to permit only one nucleus to be generated, which will grow into the single crystal. The non-nucleation surfaces are made of a material having a higher etching rate than the material of which the nucleation surfaces are made. After a process of implanting ions in the entire surface of the substrate, the resultant substrate is subjected to an etching process whereby the non-nucleation surface material alone is selectively etched to remove the unnecessarily ion-implanted portions of the material. Thus, in the ion implantation, which is performed without employing a resist and followed by selective etching, a great amount of ions can be implanted without involving the conventional problems and without complicating the method. Therefore, it is possible to achieve a sufficiently great difference in nucleation density between the nucleation and non-nucleation surfaces, thereby increasing the yield of crystal growth.

摘要翻译： 通过将具有相互相邻的非成核和成核表面的自由表面的基材进行结晶形成处理，使晶体形成的方法适于生长单晶。 每个成核表面由相对于形成单晶的材料相比具有比非成核表面更大的成核密度的无定形材料组成，并且具有足够小的面积以允许仅产生一个核 ，这将成长为单晶。 非成核表面由具有比制造成核表面的材料更高的蚀刻速率的材料制成。 在将离子注入到衬底的整个表面中的过程之后，对所得到的衬底进行蚀刻工艺，由此选择性地蚀刻非成核表面材料以除去材料的不必要的离子注入部分。 因此，在不使用抗蚀剂并且随后进行选择性蚀刻的情况下进行的离子注入中，可以注入大量的离子而不涉及常规问题，而不会使方法复杂化。 因此，可以在成核和非成核表面之间获得足够大的成核密度差，从而提高晶体生长的产率。

公开(公告)号：US5320907A

公开(公告)日：1994-06-14

申请号：US704731

申请日：1991-05-20

申请人： Nobuhiko Sato

发明人： Nobuhiko Sato

IPC分类号： C30B29/06 ,  C30B19/12 ,  C30B25/18 ,  C30B29/60 ,  H01L21/20 ,  H01L21/205 ,  H01L21/84 ,  C30B19/00

CPC分类号： H01L21/02532 ,  C30B19/12 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02645

摘要： A crystal article comprises a substrate, a plurality of single crystals provided on said substrate with adjacent single crystals contacting each other and a void generation preventive body filling the portion surrounded by said plurality of single crystals.

摘要翻译： 一种晶体制品，包括一基板，多个单晶提供在所述基片上，相邻的单晶彼此接触;以及一空隙生成预防体填充由所述多个单晶围绕的部分。

公开(公告)号：US08258505B2

公开(公告)日：2012-09-04

申请号：US12674456

申请日：2009-06-26

申请人： Akiya Kume ,  Kazuya Igarashi ,  Kohei Nagayama ,  Nobuhiko Sato

发明人： Akiya Kume ,  Kazuya Igarashi ,  Kohei Nagayama ,  Nobuhiko Sato

IPC分类号： H01L29/72

CPC分类号： H01L27/3209 ,  H01L51/005 ,  H01L51/0054 ,  H01L51/006 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/5016 ,  H01L51/5036 ,  H01L51/5203 ,  H01L51/56

摘要： Provided is a manufacturing method for an organic electroluminescence display apparatus in which processing uniformity is kept during partial removal processing of an electrode layer or an organic compound layer. The organic electroluminescence display apparatus includes: a substrate; and a light-emitting device including an organic compound layer including an emission layer sandwiched between electrodes formed on the substrate, in which: two or more of the light-emitting devices are provided, and the light-emitting devices are stacked in a direction perpendicular to the substrate; at least one of the electrodes and the organic compound layers in the two or more light-emitting devices includes openings; and the openings are positioned so as not to overlap with one another in the direction perpendicular to the substrate.

摘要翻译： 提供一种有机电致发光显示装置的制造方法，其中在电极层或有机化合物层的部分去除处理期间保持加工均匀性。 有机电致发光显示装置包括：基板; 以及包括有机化合物层的发光装置，所述有机化合物层包含夹在形成于所述基板上的电极之间的发射层，其中，设置有两个以上的发光元件，所述发光元件沿垂直方向 到基材; 两个或更多个发光器件中的电极和有机化合物层中的至少一个包括开口; 并且开口被定位成在垂直于衬底的方向上彼此不重叠。

公开(公告)号：US20120127221A1

公开(公告)日：2012-05-24

申请号：US13296533

申请日：2011-11-15

申请人： Junya Tamaki ,  Nobuhiko Sato ,  Masami Iseki ,  Kouji Ikeda ,  Masahiro Tamura ,  Takeshi Izumida ,  Naoki Tokuda

发明人： Junya Tamaki ,  Nobuhiko Sato ,  Masami Iseki ,  Kouji Ikeda ,  Masahiro Tamura ,  Takeshi Izumida ,  Naoki Tokuda

IPC分类号： G09G3/30 ,  G09G5/10

CPC分类号： G09G3/3233 ,  G09G3/006 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2320/0233 ,  G09G2320/0238 ,  G09G2320/0295 ,  G09G2330/08 ,  G09G2330/10

摘要： An organic EL displaying apparatus which suppresses a defective display caused by a leak current at a time when an emission period controlling transistor is off is provided. The organic EL displaying apparatus comprises a plurality of pixels each of which includes an organic EL element, a power supply line, a driving transistor and the emission period controlling transistor, a data line, and a control line. In this apparatus, in a certain one of the pixels, a resistance Roff—ILM between source and drain electrodes of the emission period controlling transistor in an off state of the emission period controlling transistor, and a resistance Rbk—Dr between source and drain electrodes of the driving transistor in a state that a minimum gradation displaying data voltage has been applied to a gate electrode of the driving transistor satisfy Roff—ILM≧Rbk—Dr.

摘要翻译： 提供一种有机EL显示装置，其抑制在发光周期控制晶体管截止时由泄漏电流引起的不良显示。 有机EL显示装置包括多个像素，每个像素包括有机EL元件，电源线，驱动晶体管和发光周期控制晶体管，数据线和控制线。 在该装置中，在某一像素中，发光周期控制用晶体管处于截止状态的发光周期控制晶体管的源电极和漏电极之间的电阻Roff-ILM以及源极和漏极之间的电阻Rbk-Dr 在驱动晶体管的栅电极施加了最低等级显示数据电压的状态下的驱动晶体管满足Roff-ILM≥Rbk-Dr。

公开(公告)号：US20120038265A1

公开(公告)日：2012-02-16

申请号：US13197964

申请日：2011-08-04

申请人： Takashi Moriyama ,  Noriyuki Shikina ,  Nobuhiko Sato

发明人： Takashi Moriyama ,  Noriyuki Shikina ,  Nobuhiko Sato

IPC分类号： H01J1/62

CPC分类号： H01L51/5275

摘要： An organic electroluminescence display device includes a plurality of pixels each of which includes at least one organic electroluminescence device and a lens. Each pixel includes a light emitting region provided with a lens and a light emitting region provided with no lens. An area of the light emitting region provided with a lens is smaller than an area of the light emitting region provided without a lens.

摘要翻译： 有机电致发光显示装置包括多个像素，每个像素包括至少一个有机电致发光器件和透镜。 每个像素包括设置有透镜的发光区域和不设置透镜的发光区域。 设置有透镜的发光区域的面积小于没有透镜的发光区域的面积。