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    Compound, semiconductor component, and method for producing a semiconductor component comprising an organic memory material
    31.
    发明申请
    Compound, semiconductor component, and method for producing a semiconductor component comprising an organic memory material 审中-公开
    化合物，半导体组分和用于制造包含有机存储材料的半导体组件的方法

    公开(公告)号：US20060211257A1

    公开(公告)日：2006-09-21

    申请号：US11364134

    申请日：2006-02-28

    申请人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Ute Zschieschang

    发明人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Ute Zschieschang

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L51/0591 ,  B82Y10/00 ,  G11C13/0014 ,  H01L27/28 ,  H01L51/0012 ,  H01L51/0094 ,  H01L51/0595

    摘要： The invention relates to a compound comprising at least one memory unit consisting of an organic memory material, especially for use in CMOS structures, said compound being characterized by a) at least one first anchor group (1) provided with a reactive group for covalently bonding to a first electrode (10), especially a bottom electrode of a memory cell (102), and b) at least one second anchor group (2) provided with a reactive group for bonding to a second electrode (20), especially a top electrode of a memory cell (102). The invention also relates to a semiconductor component, and to a method for producing a semiconductor component. The invention thus provides a compound, a semiconductor component, and a method for producing the semiconductor component, by which means molecular memory layers can be efficiently formed on conventional substrates.

    摘要翻译： 本发明涉及包含由有机记忆材料组成的至少一个存储单元的化合物，特别是用于CMOS结构的化合物，所述化合物的特征在于a）至少一个第一锚定基团（1），其设有用于共价键合的反应性基团 特别是第一电极（10），特别是存储单元（102）的底部电极，以及b）至少一个第二锚定组（2），其设置有用于结合到第二电极（20）的反应性基团，特别是顶部 存储单元（102）的电极。 本发明还涉及半导体部件，以及半导体部件的制造方法。 因此，本发明提供了一种化合物，半导体组件和用于制造半导体组件的方法，通过该方法，可以在常规基板上有效地形成分子存储层。

    Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric
    35.
    发明授权
    Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric 有权
    用有机化合物的自组装单层作为栅极电介质的电镀场效应晶体管的方法

    公开(公告)号：US07390703B2

    公开(公告)日：2008-06-24

    申请号：US11062766

    申请日：2005-02-22

    申请人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Stefan Braun

    发明人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Stefan Braun

    IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L51/40

    CPC分类号： H01L51/0516 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/31687

    摘要： A method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric includes through-plating by patterning a gate electrode material, and bringing an organic compound having dielectric properties into contact with the contact hole material and the gate electrode material. A contact hole material and the gate electrode material are at least partially uncovered. The contact hole is material not identical to the gate electrode material. A self-assembled monolayer of the organic compound is formed above the gate electrode material. The method also includes depositing and patterning the source and drain contacts without removing the self-assembled monolayer of the organic compound, and depositing a semiconductor material.

    摘要翻译： 用有机化合物的自组装单层作为栅极电介质的电镀场效应晶体管的方法包括通过图案化栅电极材料的通镀，以及使具有介电特性的有机化合物与接触孔材料接触， 栅电极材料。 接触孔材料和栅电极材料至少部分地不被覆盖。 接触孔是与栅电极材料不同的材料。 有机化合物的自组装单层形成在栅电极材料上方。 该方法还包括在不去除有机化合物的自组装单层和沉积半导体材料的情况下沉积和图案化源极和漏极接触。

    Reducing the contact resistance in organic field-effect transistors with palladium contacts by using nitriles and isonitriles
    38.
    发明授权
    Reducing the contact resistance in organic field-effect transistors with palladium contacts by using nitriles and isonitriles 有权
    通过使用腈和亚硝酸盐，减少有机场效应晶体管与钯触点的接触电阻

    公开(公告)号：US07151275B2

    公开(公告)日：2006-12-19

    申请号：US11020191

    申请日：2004-12-27

    申请人： Hagen Klauk ,  Guenter Schmid ,  Ute Zschieschang ,  Marcus Halik ,  Efstratios Terzoglu

    发明人： Hagen Klauk ,  Guenter Schmid ,  Ute Zschieschang ,  Marcus Halik ,  Efstratios Terzoglu

    IPC分类号： H01L21/335

    CPC分类号： H01L51/105 ,  H01L51/0051 ,  H01L51/0052 ,  H01L51/0516 ,  H01L51/0545

    摘要： A semiconductor device includes a semiconductor section formed from an organic semiconductor material, a first contact for injecting charge carriers into the semiconductor section and a second contact for extracting charge carriers from the semiconductor section, wherein a layer of a nitrile or of an isonitrile is arranged between the first contact and the semiconductor section and/or between the second contact and the semiconductor section. The nitrile or isonitrile acts as a charge transfer molecule facilitating the transfer of charge carriers between contact and organic semiconductor material. This allows the contact resistance between contact and organic semiconductor material to be significantly reduced.

    摘要翻译： 半导体器件包括由有机半导体材料形成的半导体部分，用于将电荷载流子注入到半导体部分中的第一触点和用于从半导体部分提取电荷载流子的第二触点，其中布置腈或异腈层 在第一触点和半导体部分之间和/或第二触点和半导体部分之间。 腈或异腈作为电荷转移分子，促进接触和有机半导体材料之间的载流子的转移。 这允许显着减少接触和有机半导体材料之间的接触电阻。