摘要:
A display apparatus comprises a first substrate provided with a thin film transistor array as a driving switching element and a second substrate provided with another electrode, and produces a display by electro-optical change generated between these substrates. Visibility of the display is improved in such a way that rays of light incident on the display apparatus are converted into diffusion light. Photoconductive material, in particular amorphous silicon, can be used by covering semiconductive portions of the thin film transistor array of the display apparatus with an intercepting member. In a display apparatus using a thin film transistor array as a driving switching element, a conductive surface electrically insulated from gate lines on a substrate on where the gate lines for the thin film transistor array are formed, such conductive surface acts as a counter electrode of capacitors for storing charge. Therefore the counter electrode of capacitors is separately formed from gate lines, and writing driving voltage can be set without taking effects of voltage change of gate lines into consideration. Shading layers comprising a plurality of color filters also cover each of the thin film transistors.
摘要:
A mask suitably usable in X-ray lithography has a membrane and a radiation absorbing material pattern formed on the membrane, wherein the radiation absorbing material pattern contains an alloy including tungsten (W) and molybdenum (Mo), the proportion of the molybdenum content to the alloy being in a range of 0.1-50 wt %, the alloy having crystal precedence orientation of {110}. In one preferred form, the absorbing material pattern is provided on an amolphous metal layer formed on the mask membrane.
摘要:
A display apparatus comprises a first substrate provided with a thin film transistor array as a driving switching element and a second substrate provided with another electrode, and produces a display by electro-optical change generated between these substrates. Visibility of the display is improved in such a way that rays of light incident on the display apparatus are converted into diffusion light. Photoconductive material, in particular amorphous silicon, can be used by covering a semiconductive portions of the thin film transistor array of the display apparatus with an intercepting member. In a display apparatus using a thin film transistor array as a driving switching element, a conductive surface electrically insulated from gate lines on a substrate on which the gate lines for the thin film transistor array are formed, such conductive surface acts as a counter electrode of capacitors for storing charge. Therefore the counter electrode of capacitors is separately formed from gate lines, and writing driving voltage can be set without taking effects of voltage change of gate lines into consideration. Shading layers comprising a plurality of color filters also cover each of the thin film transistors.
摘要:
An electron emission device is provided in which a drive current for driving an electron emission element is maintained at a constant level. The device comprises a transistor having its base provided with a divided voltage. The electron emission element is responsive to the transistor.
摘要:
An electron emission device comprises a P-type semiconductor layer which emits electron injected into the P-type semiconductor layer by utilizing the negative electron affinity state. At least one of said N-type semiconductor layer and the P-type semiconductor layer is made to have a super-lattice structure.
摘要:
A display apparatus comprises a first substrate provided with a thin film transistor array as a driving switching element and a second substrate provided with another electrode, and produces a display by electro-optical change generated between these substrates. Visibility of the display is improved in such a way that rays of light incident on the display apparatus are converted into diffusion light. Photoconductive material, in particular amorphous silicon, can be used by covering semiconductive portions of the thin film transistor array of the display apparatus with an intercepting member. In a display apparatus using a thin film transistor array as a driving switching element, a conductive surface electrically insulated from gate lines on a substrate on where the gate lines for the thin film transistor array are formed, such conductive surface acts as a counter electrode of capacitors for storing charge. Therefore the counter electrode of capacitors is separately formed from gate lines, and writing driving voltage can be set without taking effects of voltage change of gate lines into consideration. Shading layers comprising a plurality of color filters also cover each of the thin film transistors.
摘要:
An electric circuit member comprises a substrate provided with a thin film transistor array thereon, an inorganic insulating layer formed over said thin film transistor array and an organic insulating layer formed over said inorganic insulating layer.
摘要:
A method for forming images comprises applying voltage or electric charge to one or more electrodes selected from an electrode group comprising electrodes each of which has a transistor and attaching a toner to the selected electrodes. A device for forming images comprises an electrode group and a toner supplying device, each of electrodes of the electrode group being provided with a transistor.
摘要:
The hydrogenated amorphous silicon photoconductive layer has an infrared spectrum containing a peak at 880.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.A) and a peak at 970.+-.10 cm.sup.-1 (intensity of this peak being referred to as I.sub.B) in the infrared spectrum, the ratio I.sub.A /I.sub.B, being not more than 1.0.
摘要:
A photoelectric transducing element with a high polymer substrate, being characterized in that the element comprises a conductor layer formed on a flexible high polymer insulation film substrate and comprising at least one pair of independent conductor patterns and a photoelectric transducing layer superposed on the patterned portion of the conductor layer and consisting of a thin film of amorphous photoconductive material formed by means of a thin film forming means.