摘要:
The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.
摘要:
In the present invention, a lower electrode is utilized as a photomask to form a liquid-repellent region having a generally same pattern shape as that of the lower electrode and a liquid-attracting region having a generally reversed pattern shape on an insulating film. A conductive ink is coated and calcined in the liquid-attracting region to form an upper electrode having a generally reversed pattern shape to the lower electrode in a self-aligned manner, eliminating the occurrence of misregistration even when a printing method is used. Consequently, semiconductor devices such as an active matrix thin film transistor substrate can be formed using a printing method.
摘要:
A normally closed liquid crystal display device using an in-plane switching mode prevented from light leakage caused by spacer beads and having a high contrast ratio can be produced by making a pretilt angle between an alignment control film and liquid crystals 4° or less and controlling a light leakage centering the spacer in 4-divided shapes; or by placing a film provided with a liquid crystal alignment controlling function by irradiation with polarized light between the spacer and a liquid crystal layer, the spacer being present in a pair of substrates.
摘要:
An active matrix liquid crystal display device is provided for realizing a high uniformity of display luminance with lower power consumption, a higher contrast, and a wider viewing angle. In a common wire eliminated (common-less) IPS-type active matrix liquid crystal display device, an opposing electrode 107 is arranged above a signal wire 104 and a thin film transistor (TFT) through an insulating layer. The opposing electrode 107 and a scanning wire 101 shield the signal wire 104 or the TFT to prevent light from leaking from edge portions of the signal wire 104 as well as the TFT from malfunctioning due to a current generated by leaked light, thereby realizing the elimination of a black matrix (BM), a reduction in size of a black matrix, and planarized substrates, thus resulting in a higher aperture ratio and an improved uniformity of cell gap.
摘要:
A thin film transistor used as a switching element of an active matrix type liquid crystal display is an enhancement-mode thin film transistor including a silicon nitride film formed over a scanning electrode, an insulating layer formed on the silicon nitride film, and a semiconductor layer having a source region and a drain region formed on the insulating layer. The thin film transistor has a threshold voltage higher than the maximum value of the liquid crystal operating voltage. The insulating layer is a silicon oxide film having a thickness of 30 Å or more.
摘要:
A liquid crystal display device has a plurality of gate electric wirings provided on one of a pair of substrates, a plurality of drain electric wirings which respectively intersect with the plurality of gate electric wirings in a matrix state, a plurality of thin film transistors formed on respective intersecting points of the drain electric wirings and the gate electric wirings, a plurality of common electric wirings extending in the same direction as the gate electric wirings, a plurality of picture elements, at least one of the picture elements being respectively surrounded by the gate electric wirings and the drain electric wirings, a plurality of counter electrodes connected to the common electric wirings and extending in the same direction as the drain electric wirings, and a plurality of the picture element electrodes connected to the thin film transistors and extending in the same direction as the counter electrode corresponding to respective picture elements, in which the respective counter electrodes contact the liquid crystal layer directly. Furthermore, an electric field having a parallel component with respect to one of the pair of substrates is produced in said liquid crystal layer by an electrical voltage applied between the counter electrodes and the picture element electrodes.
摘要:
An electrophotographic member comprising a support, a photoconductive layer formed thereon, and a surface layer formed thereon, said surface layer including or attaching a lubricating agent having a perfluoropolyoxyalkyl or perfluoropolyoxyalkylene group to form an organic surface protective lubricating layer, and a fixing group to be fixed to the surface layer, is excellent in moisture resistance, wear resistance and cleaning properties and thus useful in an electrophotographic apparatus with a long life and high reliability.
摘要:
Each TFT for driving each of a plurality of pixels arranged in a matrix-like configuration is configured using a stagger-type polycrystalline-Si TFT. A gate electrode, which is composed of a high-heat-resistant material capable of resisting high temperature at the time of polycrystalline-Si film formation, is disposed at a lower layer as compared with the polycrystalline-Si layer that forms a channel of each TFT. A gate line, which is composed of a low-resistance material, is disposed at an upper layer as compared with the polycrystalline-Si layer. The gate electrode and the gate line are connected to each other via a through-hole bored in a gate insulation film. Respective configuration components of each organic electro-luminescent element are partially co-used at the time of the line formation, thereby suppressing an increase in the steps, processes, and configuration components.
摘要:
A display device includes a plurality of thin-film transistors formed on a substrate on which a display area is formed. At least one of the plurality of thin-film transistors includes a gate electrode, agate insulating film formed to cover the gate electrode, an interlayer insulating film formed on an upper surface of the gate insulating film and having an opening formed in an area where the gate electrode is formed in plan view, a pair of heavily-doped semiconductor films arranged on an upper surface of the interlayer insulating film with the opening interposed therebetween, a polycrystalline semiconductor film formed across the opening and formed in the area, the polycrystalline semiconductor film being electrically connected to the pair of heavily-doped semiconductor films, and a pair of electrodes formed to overlap the pair of heavily-doped semiconductor films, respectively, without overlapping the polycrystalline semiconductor film.
摘要:
There is provided a liquid crystal display device in which light leaks near spacers are prevented. The liquid crystal display device controls the optical transmissivity of a liquid crystal layer interposed between substrates disposed in opposition to each other, by means of an electric field generated in the layer-thickness direction of the liquid crystal layer, includes spacers formed on a liquid-crystal-side surface of one of the substrates, signal lines formed on a liquid-crystal-side surface of the other substrate, an insulating film formed to cover the signal lines, and electrodes formed on the upper surface of the insulating film, each of which serves as one electrode contributing to control of the optical transmissivity of the liquid crystal layer. Each of the spacers has a vertex surface disposed in opposition to any of the signal lines, and a portion of each of the electrodes is extended to the upper surface of a corresponding one of the signal lines and the extended portion is opposed to a part of the vertex surface of a spacer disposed in opposition to the corresponding one of the signal lines.