公开(公告)号：US08721833B2

公开(公告)日：2014-05-13

申请号：US13366341

申请日：2012-02-05

Applicant: Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

Inventor： Zhiying Chen ,  Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/306

CPC classification number: H01J37/32495 ,  H01J37/32504

Abstract: A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.

Abstract translation: 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可替换室元件包括腔室部件，其被构造成在等离子体处理系统中暴露于等离子体，其中室部件由铁电材料制成。

公开(公告)号：US08501499B2

公开(公告)日：2013-08-06

申请号：US13073237

申请日：2011-03-28

Applicant: Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

Inventor： Radha Sundararajan ,  Merritt Funk ,  Lee Chen ,  Barton Lane

IPC: H01L21/00 ,  H01L21/461 ,  H01L21/302

CPC classification number: H01L22/20 ,  H01J37/32082 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/6708 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.

Abstract translation: 本发明提供了一种使用离子能量（IE）相关的多层过程序列和离子能量控制多输入/多输出（IEC-MIMO）模型和可包括一个或多个测量过程的库来处理晶片的方法，其中一个或多个 更多的IEC蚀刻序列和一个或多个离子能量优化（IEO）蚀刻程序。 IEC-MIMO过程控制使用多层和/或多个IEC蚀刻序列之间的动态交互行为建模。 多层和/或多个IEC蚀刻序列可以与可以使用IEO蚀刻工艺创建的线，沟槽，通孔，间隔物，触点和栅极结构的产生相关联。

公开(公告)号：US07894927B2

公开(公告)日：2011-02-22

申请号：US12186619

申请日：2008-08-06

Applicant: Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager ,  Hyung Joo Lee

Inventor： Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager ,  Hyung Joo Lee

IPC: G06F19/00 ,  G06F17/50 ,  G06F7/60 ,  G06F1/00

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.

Abstract translation: 本发明提供了一种使用多层处理序列和多层/多输入/多输出（MLMIMO）模型以及可以包括一个或多个测量程序，一个或多个聚蚀刻（PE）序列 ，以及一个或多个金属栅极蚀刻序列。 MLMIMO过程控制使用多个层和/或多个过程步骤之间的动态交互行为建模。 多层和/或多个工艺步骤可以与可以使用各向同性和/或各向异性蚀刻工艺产生的线，沟槽，通孔，间隔物，接触和栅极结构的产生相关联。

公开(公告)号：US07718030B2

公开(公告)日：2010-05-18

申请号：US11233025

申请日：2005-09-23

Applicant: Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

Inventor： Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的衬底的衬底保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

公开(公告)号：US07674636B2

公开(公告)日：2010-03-09

申请号：US11684818

申请日：2007-03-12

Applicant: Radha Sundararajan ,  Lee Chen ,  Merritt Funk

Inventor： Radha Sundararajan ,  Lee Chen ,  Merritt Funk

IPC: H01L21/66

CPC classification number: H01L22/20

Abstract: A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.

Abstract translation: 提供了一种方法和装置，以在处理期间控制衬底上的径向或非径向温度分布，以补偿不均匀的影响，包括由系统变化产生的径向和角度不均匀性或过程变化，或两者。 优选动态地控制温度，通过在晶片支撑卡盘上的不同区域上不同地流动背面气体来改变晶片上的热传导。 例如，氦的背侧气体流动在卡盘之间动态变化以控制晶片的处理的均匀性。 支撑中的端口被分组，并且来自组的气体由响应于控制器的不同阀单独控制，所述控制器在空间上控制每个区域中的气体压力，并且优选地动态地控制晶片温度以补偿系统和过程的不均匀性 。

公开(公告)号：US20100036518A1

公开(公告)日：2010-02-11

申请号：US12186619

申请日：2008-08-06

Applicant: Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager ,  Hyung Joo Lee

Inventor： Merritt Funk ,  Radha Sundararajan ,  Asao Yamashita ,  Daniel Prager ,  Hyung Joo Lee

IPC: G06F19/00

CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.

Abstract translation: 本发明提供了一种使用多层处理序列和多层/多输入/多输出（MLMIMO）模型以及可以包括一个或多个测量程序，一个或多个聚 - 蚀刻（PE）序列 ，以及一个或多个金属栅极蚀刻序列。 MLMIMO过程控制使用多层和/或多个过程步骤之间的动态交互行为建模。 多层和/或多个工艺步骤可以与可以使用各向同性和/或各向异性蚀刻工艺产生的线，沟槽，通孔，间隔物，接触和栅极结构的产生相关联。

公开(公告)号：US07642102B2

公开(公告)日：2010-01-05

申请号：US11668572

申请日：2007-01-30

Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

IPC: H01L21/66

CPC classification number: G01B11/0616 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70608 ,  G03F7/70691

Abstract: The invention can provide a method of processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer thickness data to create, modify, and/or use measurement recipe data, measurement profile data, and/or measurement model data. In addition, RTPT procedures can use real-time wafer thickness data to create, modify, and/or use process recipe data, process profile data, and/or process model data.

Abstract translation: 本发明可以提供使用实时参数调整（RTPT）程序来处理晶片的方法，以接收可以包括直通消息，实时前馈消息或实时优化消息的输入消息， 或其任何组合。 RTPT程序可以使用实时晶片厚度数据来创建，修改和/或使用测量配方数据，测量简档数据和/或测量模型数据。 此外，RTPT程序可以使用实时晶片厚度数据来创建，修改和/或使用过程配方数据，过程配置文件数据和/或过程模型数据。

公开(公告)号：US07636608B2

公开(公告)日：2009-12-22

申请号：US11025227

申请日：2004-12-30

Applicant: Merritt Funk ,  Masaki Tozawa

Inventor： Merritt Funk ,  Masaki Tozawa

IPC: G06F19/00 ,  G06F11/00 ,  G01R31/26

CPC classification number: G05B19/4187 ,  G05B2219/31186 ,  G05B2219/32128 ,  G05B2219/35504 ,  G05B2219/36121 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/205 ,  Y02P90/86

Abstract: Graphical User Interfaces (GUIs) are presented for configuring and setting-up dynamic sensors for monitoring tool and process performance in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules (chambers), and a number of sensors. The graphical display is organized so that all significant parameters are clearly and logically displayed so that the user is able to perform the desired configuration and setup tasks with as little input as possible. The GUI is web-based and is viewable by a user using a web browser.

Abstract translation: 提供图形用户界面（GUI），用于配置和设置动态传感器，用于在半导体处理系统中监控工具和过程性能。 半导体处理系统包括多个处理工具，多个处理模块（室）和多个传感器。 图形显示被组织，使得所有重要参数都被清楚和逻辑地显示，使得用户能够尽可能少地输入所需的配置和设置任务。 GUI是基于Web的，并且可以由使用web浏览器的用户查看。

公开(公告)号：US20080282979A1

公开(公告)日：2008-11-20

申请号：US11750539

申请日：2007-05-18

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: C23C16/00

CPC classification number: H01L21/67069 ,  H01J37/32192 ,  H01J37/3244

Abstract: A method and system for introducing a process fluid through a chamber component in a processing system is described. The chamber component comprises a chamber element having a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the process side is opposite the supply side. Furthermore, the chamber component comprises a conduit extending through the chamber element from the supply side to the process side, wherein the conduit comprises an inlet configured to receive a process fluid and an outlet configured to distribute the process fluid.

Abstract translation: 描述了一种通过处理系统中的腔室部件引入过程流体的方法和系统。 腔室部件包括腔室元件，腔室元件具有在腔室元件的供给侧上的第一表面和腔室元件的过程侧上的第二表面，其中处理侧与供给侧相对。 此外，腔室部件包括从供应侧延伸穿过腔室元件到管道侧的管道，其中管道包括被配置为接收过程流体的入口和被配置为分配过程流体的出口。

公开(公告)号：US20080223873A1

公开(公告)日：2008-09-18

申请号：US11684853

申请日：2007-03-12

Applicant: Lee Chen ,  Radha Sundararajan ,  Merritt Funk

Inventor： Lee Chen ,  Radha Sundararajan ,  Merritt Funk

IPC: C23F1/02

CPC classification number: H01J37/32642 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/0324 ,  Y10T428/215

Abstract: A method and system for dynamically controlling a process chemistry above a substrate is described. The system for adjusting the process chemistry comprises a ring configured to surround a peripheral edge of a substrate in a vacuum processing system. The ring comprises one or more gas distribution passages formed within the ring and configured to supply an additive process gas through an upper surface of the ring to the peripheral region of the substrate, wherein the one or more gas distribution passages are configured to be coupled to one or more corresponding gas supply passages formed within the substrate holder upon which the ring rests.

Abstract translation: 描述了用于动态地控制衬底上方的工艺化学物质的方法和系统。 用于调整工艺化学的系统包括配置成在真空处理系统中围绕衬底的周边边缘的环。 所述环包括一个或多个气体分配通道，所述气体分配通道形成在所述环内并且构造成通过所述环的上表面将添加的处理气体供应到所述基底的周边区域，其中所述一个或多个气体分配通道被配置为与 一个或多个对应的气体供给通道，其形成在所述基座保持器内，所述环支撑在所述基座支架上。