公开(公告)号：US20100221887A1

公开(公告)日：2010-09-02

申请号：US12779810

申请日：2010-05-13

申请人： Shiu-Ko JangJian ,  Wan-Ting Huang ,  Yu-Jen Chien ,  Phil Sun

发明人： Shiu-Ko JangJian ,  Wan-Ting Huang ,  Yu-Jen Chien ,  Phil Sun

IPC分类号： H01L21/336

CPC分类号： H01L21/3105 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/31612 ,  H01L21/321 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76837

摘要： An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.

摘要翻译： 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷（TEOS）的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层，其中第一和第二工艺气体具有不同的氧与-TEOS比。

公开(公告)号：US09123608B2

公开(公告)日：2015-09-01

申请号：US13416004

申请日：2012-03-09

申请人： Shiu-Ko JangJian ,  Volume Chien ,  Szu-An Wu

发明人： Shiu-Ko JangJian ,  Volume Chien ,  Szu-An Wu

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685 ,  H01L27/14698

摘要： A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.

摘要翻译： 背面照明CMOS图像传感器包括使用前侧离子注入工艺和邻近光有源区形成的延伸的光有源区在衬底上形成的光有源区，其中扩展的光有源区通过使用背侧离子注入形成 处理。 背面照明的CMOS图像传感器还可以包括在衬底的背面上的激光退火层。 扩展的光有源区域有助于增加转换成电子的光子数量，以提高量子效率。

公开(公告)号：US20130320478A1

公开(公告)日：2013-12-05

申请号：US13486833

申请日：2012-06-01

申请人： Shiu-Ko JangJian ,  Kei-Wei Chen ,  Chi-Cherng Jeng ,  Min Hao Hong

发明人： Shiu-Ko JangJian ,  Kei-Wei Chen ,  Chi-Cherng Jeng ,  Min Hao Hong

IPC分类号： H01L31/103 ,  H01L29/36 ,  H01L31/18

CPC分类号： H01L31/103 ,  H01L29/36 ,  H01L31/1037 ,  H01L31/18 ,  H01L31/1812 ,  Y02E10/50

摘要： System and method for processing a semiconductor device surface to reduce dark current and white pixel anomalies. An embodiment comprises a method applied to a semiconductor or photodiode device surface adjacent to a photosensitive region, and opposite a side having circuit structures for the device. A doped layer may optionally be created at a depth of less than about 10 nanometers below the surface of the substrate and may be doped with a boron concentration between about 1E13 and 1E16. An oxide may be created on the substrate using a temperature sufficient to reduce the surface roughness below a predetermined roughness threshold, and optionally at a temperature between about 300° C. and 500° C. and a thickness between about 1 nanometer and about 10 nanometers. A dielectric may then be created on the oxide, the dielectric having a refractive index greater than a predetermined refractive threshold, optionally at least about 2.0.

摘要翻译： 用于处理半导体器件表面以减少暗电流和白色像素异常的系统和方法。 一个实施例包括应用于与光敏区域相邻的半导体或光电二极管器件表面的方法，以及与该器件的电路结构相反的一侧。 掺杂层可以任选地在衬底表面下方小于约10纳米的深度处产生，并且可以掺杂在约1E13和1E16之间的硼浓度。 可以使用足以将表面粗糙度降低到预定粗糙度阈值以下且可选地在约300℃至500℃之间的温度和约1纳米至约10纳米的厚度的温度在基底上产生氧化物 。 然后可以在氧化物上产生电介质，电介质具有大于预定折射阈值的折射率，任选至少约2.0。

公开(公告)号：US20130320419A1

公开(公告)日：2013-12-05

申请号：US13620322

申请日：2012-09-14

申请人： Shiu-Ko JangJian ,  Min Hao Hong ,  Kei-Wei Chen ,  Chih-Cherng Jeng

发明人： Shiu-Ko JangJian ,  Min Hao Hong ,  Kei-Wei Chen ,  Chih-Cherng Jeng

IPC分类号： H01L31/113 ,  H01L31/18

CPC分类号： H01L27/14645 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L29/16 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method includes performing a first epitaxy to grow a first epitaxy layer of a first conductivity type, and performing a second epitaxy to grow a second epitaxy layer of a second conductivity type opposite the first conductivity type over the first epitaxy layer. The first and the second epitaxy layers form a diode. The method further includes forming a gate dielectric over the first epitaxy layer, forming a gate electrode over the gate dielectric, and implanting a top portion of the first epitaxy layer and the second epitaxy layer to form a source/drain region adjacent to the gate dielectric.

公开(公告)号：US20130234202A1

公开(公告)日：2013-09-12

申请号：US13415546

申请日：2012-03-08

申请人： Shiu-Ko JangJian ,  Min Hao Hong ,  Kei-Wei Chen ,  Szu-An Wu

发明人： Shiu-Ko JangJian ,  Min Hao Hong ,  Kei-Wei Chen ,  Szu-An Wu

IPC分类号： H01L31/109 ,  H01L31/18

CPC分类号： H01L27/1463 ,  H01L27/1464

摘要： Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.

摘要翻译： 公开了包括根据实施例的隔离区域的图像传感器，以及形成具有隔离区域的图像传感器的方法。 实施例是包括半导体衬底，半导体衬底中的光电元件和半导体衬底中的隔离区域的结构。 隔离区域靠近光电元件并且包括电介质材料和外延区域。 外延区域设置在半导体衬底和电介质材料之间。

公开(公告)号：US20130207213A1

公开(公告)日：2013-08-15

申请号：US13396426

申请日：2012-02-14

申请人： Shiu-Ko JangJian ,  Szu-An Wu ,  Sheng-Wen Chen

发明人： Shiu-Ko JangJian ,  Szu-An Wu ,  Sheng-Wen Chen

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/1446 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

摘要： A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

摘要翻译： 一种器件包括具有正面和背面的半导体衬底。 光敏装置设置在半导体基板的正面上。 第一和第二栅极线彼此平行，并且设置在半导体衬底的背面并且覆盖其上。 堆叠层包括粘合层，粘合层上的金属层和金属层上的高折射率层。 粘合层，金属层和高折射率层基本上共形，并且在第一和第二栅格线的顶表面和侧壁上延伸。

公开(公告)号：US20130171766A1

公开(公告)日：2013-07-04

申请号：US13477897

申请日：2012-05-22

申请人： Yu-Ting Lin ,  Cheng-Jung Sung ,  Yu-Sheng Wang ,  Shiu-Ko JangJian ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Ching-Hwanq Su

发明人： Yu-Ting Lin ,  Cheng-Jung Sung ,  Yu-Sheng Wang ,  Shiu-Ko JangJian ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Ching-Hwanq Su

IPC分类号： H01L31/18

CPC分类号： H01L27/14687 ,  H01L21/268 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689

摘要： A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.

摘要翻译： 一种方法包括在半导体衬底的背面进行研磨。 图像传感器设置在半导体衬底的前侧。 杂质掺杂到半导体衬底的背面的表面层中以形成掺杂层。 在掺杂层上进行多周期激光退火。

公开(公告)号：US20120326312A1

公开(公告)日：2012-12-27

申请号：US13167857

申请日：2011-06-24

申请人： Shiu-Ko JangJian ,  Ting-Chun Wang ,  Szu-An Wu

发明人： Shiu-Ko JangJian ,  Ting-Chun Wang ,  Szu-An Wu

IPC分类号： H01L21/28 ,  H01L23/48 ,  B82Y40/00

CPC分类号： H01L23/4827 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.

摘要翻译： 一种方法包括在电介质层中形成开口，并且在介电层的表面上形成富硅层。 富硅层的一部分延伸到开口中并与电介质层接触。 在富含硅层上方形成含钽层。 进行退火以使含钽层与富硅层反应，从而形成含钽和硅的层。

公开(公告)号：US20120119303A1

公开(公告)日：2012-05-17

申请号：US13358365

申请日：2012-01-25

申请人： Shiu-Ko JangJian ,  Wan-Ting Huang ,  Yu-Jen Chien ,  Phil Sun

发明人： Shiu-Ko JangJian ,  Wan-Ting Huang ,  Yu-Jen Chien ,  Phil Sun

IPC分类号： H01L29/45 ,  H01L29/78

CPC分类号： H01L21/3105 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/31612 ,  H01L21/321 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76837

摘要： An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.

摘要翻译： 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷（TEOS）的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层，其中第一和第二工艺气体具有不同的氧与-TEOS比。

公开(公告)号：US07741171B2

公开(公告)日：2010-06-22

申请号：US11803437

申请日：2007-05-15

申请人： Shiu-Ko JangJian ,  Wan-Ting Huang ,  Yu-Jen Chien ,  Phil Sun

发明人： Shiu-Ko JangJian ,  Wan-Ting Huang ,  Yu-Jen Chien ,  Phil Sun

IPC分类号： H01L21/8238

CPC分类号： H01L21/3105 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/31612 ,  H01L21/321 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76837

摘要： An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.

摘要翻译： 提供集成电路结构及其形成方法。 该方法包括提供表面; 对表面进行电离氧处理; 使用包含第一含氧气体和四乙氧基硅烷（TEOS）的第一工艺气体形成包含氧化硅的初始层; 并在初始层上形成硅酸盐玻璃。 该方法可以进一步包括使用包含第二含氧气体和TEOS的第二工艺气体形成缓冲层，其中第一和第二工艺气体具有不同的氧与-TEOS比。