Issuing unlock codes from a server with third party billing
    31.
    发明申请
    Issuing unlock codes from a server with third party billing 审中-公开
    从具有第三方计费的服务器发出解锁码

    公开(公告)号:US20060064761A1

    公开(公告)日:2006-03-23

    申请号:US10947532

    申请日:2004-09-22

    IPC分类号: H04L9/00 H04L9/32 H04K1/00

    CPC分类号: G06F21/10 G06F2221/0742

    摘要: The use of software is licensed on a particular central processing unit (CPU) residing on a computing device. A code is generated at a central service and provided to a third party publisher, such as a third party website, a vending machine, a retailer, or a phone service provider, for example. The third party publisher then provides the code to a user, who provides it to the computing device, which in turn, unlocks the appropriate software (or features of software) residing on, or being used in conjunction with, the computing device. The unlocking code may be provided to a storage device such as a memory unit that is plugged into or otherwise attached to the computing device running the software, or may be provided to the user who enters the code manually. The unlocking code may unlock the entire software application, or just particular features of the software, such as a higher level of a game or a working version of an application that was otherwise provided as a demo version.

    摘要翻译: 使用软件在驻留在计算设备上的特定中央处理单元(CPU)上获得许可。 代码在中央服务处生成并提供给例如第三方网站,自动售货机,零售商或电话服务提供商的第三方发行商。 然后,第三方发行商将代码提供给用户,该用户将其提供给计算设备,该用户进而解锁驻留在计算设备上或与计算设备结合使用的适当的软件(或软件特征)。 可以将解锁代码提供给诸如插入或以其他方式附接到运行软件的计算设备的存储单元的存储设备,或者可以将其提供给手动输入代码的用户。 解锁代码可以解锁整个软件应用程序,或只是软件的特定功能,例如更高级别的游戏或作为演示版本提供的应用程序的工作版本。

    Licensing the use of software on a particular CPU

    公开(公告)号:US20060059571A1

    公开(公告)日:2006-03-16

    申请号:US10931785

    申请日:2004-09-01

    IPC分类号: H04N7/16

    摘要: Software is licensed for use on a particular computing device, such as a gaming console or a multimedia console. An unlocking code is provided from a distribution service to the computing device (either directly or via a user), which in turn, unlocks the appropriate software or portion of software for use with the associated computing device. The software may reside on a computer-readable medium, such as a CD-ROM or DVD disk, that is being used in conjunction with the computing device. The unlocking code may be provided directly to the user in private (e.g., via email or a mobile phone) or in public (e.g., published on a website). Portions of the software that may be unlocked include a particular level of a game or other features (such as additional characters or weapons), or a working or more advanced version of an application that was otherwise provided as a demo or older version. The unlocking code may be based on a unique identifier of the computing device and an identifier associated with the software seeking to be accessed. Thus, the code may only be used by the computing device having that unique identifier. This prevents unauthorized or unlicensed computing devices from using the software.

    Gas delivery apparatus and method for atomic layer deposition

    公开(公告)号:US20050173068A1

    公开(公告)日:2005-08-11

    申请号:US11077753

    申请日:2005-03-11

    摘要: One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

    Tantalum barrier layer for copper metallization
    35.
    发明申请
    Tantalum barrier layer for copper metallization 有权
    用于铜金属化的钽阻挡层

    公开(公告)号:US20050074968A1

    公开(公告)日:2005-04-07

    申请号:US10693775

    申请日:2003-10-25

    摘要: A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In a single plasma sputter reactor, a first step sputters the wafer rather than the target with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls and a second step sputter deposits a second barrier layer, for example of Ta/TaN, onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls.

    摘要翻译: 在穿过层间电介质层的通孔中形成阻挡层的方法,包括涂覆在通孔的底部和侧壁上的预先形成的第一屏障。 在单个等离子体溅射反应器中,第一步骤以高能离子将晶片而不是目标物喷射,以从通孔的底部除去阻挡层,而不是从侧壁排出,第二步骤溅射沉积第二阻挡层,例如 的Ta / TaN,通过底部和侧壁。 这两个步骤可以通过施加到靶,通过室压力或通过晶片偏置的功率来区分。 第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。

    Method of fabricating high density multiple states mask ROM cells
    39.
    发明授权
    Method of fabricating high density multiple states mask ROM cells 有权
    制造高密度多态掩模ROM单元的方法

    公开(公告)号:US06200861B1

    公开(公告)日:2001-03-13

    申请号:US09276646

    申请日:1999-03-26

    申请人: Shye-Lin Wu Ling Chen

    发明人: Shye-Lin Wu Ling Chen

    IPC分类号: H01L218236

    摘要: A method of fabricating high density multiple states mask ROM cells on a semiconductor substrate is disclosed. The method comprises the following steps. Firstly, the array of buried bit line is formed on semiconductor substrate. Then, a CVD oxide film is deposited on said substrate. The first coding mask is applied to dip out the CVD oxide film on the uncoded regions. Then, a thin gate oxide film is thermally grown on said substrate. At the same time, the CVD oxide film is densified and the N+source/drain junction of buried bit lines is formed. A conductive layer is then deposited on all area followed by defining the word lines. The second coding process is performed by using a high energy boron ion implantation through the conductive layer and gate oxide film into said predetermined regions. By combination of the first CVD oxide coding process and the second boron ion implantation coding process, a high density mask ROM with a multiple states is fabricated.

    摘要翻译: 公开了一种在半导体衬底上制造高密度多态掩模ROM单元的方法。 该方法包括以下步骤。 首先,在半导体衬底上形成掩埋位线阵列。 然后,CVD氧化膜沉积在所述衬底上。 应用第一编码掩模以在未编码区域上浸出CVD氧化物膜。 然后,在所述衬底上热生长薄栅氧化膜。 同时CVD氧化膜致密化,形成掩埋位线的N +源极/漏极结。 然后将导电层沉积在所有区域上,然后定义字线。 通过使用通过导电层和栅极氧化物膜的高能量硼离子注入到所述预定区域来执行第二编码处理。 通过第一CVD氧化物编码处理和第二硼离子注入编码处理的组合,制造具有多个状态的高密度掩模ROM。

    Method for aligning a wafer
    40.
    发明授权
    Method for aligning a wafer 失效
    对准晶片的方法

    公开(公告)号:US6063440A

    公开(公告)日:2000-05-16

    申请号:US893461

    申请日:1997-07-11

    摘要: A method for aligning a wafer on a support member within a vacuum chamber includes increasing the pressure within the vacuum chamber to at least about 1 Torr before aligning the wafer. The wafer is introduced into the vacuum chamber on the support member, the pressure is increased to at least about one Torr, and the support member is lifted into a shadow ring that has a frustoconical inner cavity constructed to funnel the wafer to a centered, aligned position.

    摘要翻译: 在真空室内的支撑构件上对准晶片的方法包括在对准晶片之前将真空室内的压力增加至至少约1Torr。 将晶片引入到支撑构件上的真空室中,将压力增加至至少约1乇,并将支撑构件提升到阴影环中,阴影环具有构造成将晶圆漏斗到中心对准的截头圆锥形内腔 位置。