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公开(公告)号：US20170133383A1
公开(公告)日：2017-05-11
申请号：US14934659
申请日：2015-11-06
Applicant: Micron Technology, Inc.
Inventor： Sumeet C. Pandey , Gurtej S. Sandhu , Wayne I. Kinney , Karl W. Holtzclaw
IPC: H01L27/108 , G11C11/407
CPC classification number: H01L27/10808 , G11C11/404 , G11C11/407 , H01L28/65
Abstract: Volatile memory cells including dielectric materials exhibiting a nonlinear capacitance as a function of voltage. The volatile memory cells comprise a source region and a drain region within a substrate and a capacitor coupled to one of the source region and the drain region. The capacitor includes a charge storage material disposed between a pair of electrodes. The charge storage material has a crystal structure comprising an oxide of zirconium, hafnium, and bismuth, and is configured and formulated to transition from a first phase to a second phase exhibiting a higher capacitance than the first phase responsive to application of an electrical field. A digit line is electrically coupled to at least one electrode of the pair of electrodes and one of the source region and the drain region. Semiconductor devices and systems including the volatile memory cells and related methods of operating the volatile memory cells are also described.
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公开(公告)号：US20150263269A1
公开(公告)日：2015-09-17
申请号：US14728268
申请日：2015-06-02
Applicant: Micron Technology, Inc.
Inventor： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
CPC classification number: H01L27/222 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3218 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely-directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.
Abstract translation: 公开了存储单元。 存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。 耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。 通过耦合器子区彼此间隔开的相邻的磁子区域表现出相反方向的磁取向。 磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。 可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。 还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。
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公开(公告)号：US20240395302A1
公开(公告)日：2024-11-28
申请号：US18795605
申请日：2024-08-06
Applicant: Micron Technology, Inc.
Inventor： Albert Liao , Wayne I. Kinney , Yi Fang Lee , Manzar Siddik
Abstract: A ferroelectric device includes an electrode, another electrode, and a ferroelectric structure between the electrode and the another electrode. The ferroelectric structure includes one or more portions of bismuth oxide, and one or more portions of at least one metal oxide comprising hafnium-containing oxide, zirconium-containing oxide, or a combination thereof. A ferroelectric memory cell includes a source region, a drain region, and a capacitor in electrical communication with the drain region. The capacitor includes an electrode and a ferroelectric structure neighboring the electrode. The ferroelectric structure includes a first material comprising a first metal oxide, a second material comprising bismuth oxide, and a third material comprising a second metal oxide. The ferroelectric structure also includes a dopant in an amount of between about 0.1 atomic percent and about 25.0 atomic percent based on non-oxygen atoms of the ferroelectric structure.
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公开(公告)号：US12080329B2
公开(公告)日：2024-09-03
申请号：US17812132
申请日：2022-07-12
Applicant: Micron Technology, Inc.
Inventor： Albert Liao , Wayne I. Kinney , Yi Fang Lee , Manzar Siddik
CPC classification number: G11C11/221 , G11C11/2297 , H01L28/40 , H01L28/55 , H10B53/30 , H10B53/40 , G11C11/2273 , G11C11/2275
Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.
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公开(公告)号：US20220320179A1
公开(公告)日：2022-10-06
申请号：US17806674
申请日：2022-06-13
Applicant: Micron Technology, Inc.
Inventor： Witold Kula , Wayne I. Kinney , Gurtej S. Sandhu
Abstract: A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20200075713A1
公开(公告)日：2020-03-05
申请号：US16121966
申请日：2018-09-05
Applicant: Micron Technology, Inc.
Inventor： Michael Mutch , Manuj Nahar , Wayne I. Kinney
IPC: H01L29/04 , H01L21/02 , H01L21/324 , H01L29/161
Abstract: A method includes forming a semiconductor structure. The structure includes a first material, a blocking material, a second material in an amorphous form, and a third material in an amorphous form. The blocking material is disposed between the first material and the second material. At least the second material and the third material each comprise silicon and/or germanium. The structure is exposed to a temperature above a crystallization temperature of the third material and below a crystallization temperature of the second material. Semiconductor structures, memory devices, and systems are also disclosed.
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公开(公告)号：US10319426B2
公开(公告)日：2019-06-11
申请号：US15590863
申请日：2017-05-09
Applicant: Micron Technology, Inc.
Inventor： Albert Liao , Wayne I. Kinney , Yi Fang Lee , Manzar Siddik
IPC: G11C11/22 , H01L27/11507 , H01L27/11509 , H01L49/02
Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.
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公开(公告)号：US10121824B2
公开(公告)日：2018-11-06
申请号：US15642577
申请日：2017-07-06
Applicant: Micron Technology, Inc.
Inventor： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.
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公开(公告)号：US09876053B2
公开(公告)日：2018-01-23
申请号：US15289610
申请日：2016-10-10
Applicant: Micron Technology, Inc.
Inventor： Witold Kula , Wayne I. Kinney , Gurtej S. Sandhu
CPC classification number: H01L27/222 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.
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公开(公告)号：US09711565B2
公开(公告)日：2017-07-18
申请号：US15168054
申请日：2016-05-29
Applicant: Micron Technology, Inc.
Inventor： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
CPC classification number: H01L27/222 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3218 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.
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