摘要:
The signal transmission circuit is provided, said signal transmission circuit being capable of stable operations even with a source power of low voltage and a fast operation. The signal transmission circuit comprises plural stages of circuit in each of which the pulse voltage according to the driving pulse is sequentially outputted. The circuit of each stage includes: the output transistor T12 for outputting the pulse voltage to the source, according to the driving pulse; the bootstrap capacitor C1 connected between the gate and the source of the output transistor; the first charging transistor T11 for charging the bootstrap capacitor; the first and the second discharging transistor T13 and T14 for discharging the electric charge of the bootstrap capacitor; and the logical circuit which (i) turns on the first and the second discharging transistor, according to the driving pulse for each circuit of the other stages, and (ii) turns off the first and the second discharging transistor, according to the gate signal of the charging transistor.
摘要:
The signal transmission circuit is provided, said signal transmission circuit being capable of stable operations even with a source power of low voltage and a fast operation. The signal transmission circuit comprises plural stages of circuit in each of which the pulse voltage according to the driving pulse is sequentially outputted. The circuit of each stage includes: the output transistor T12 for outputting the pulse voltage to the source, according to the driving pulse; the bootstrap capacitor C1 connected between the gate and the source of the output transistor; the first charging transistor T11 for charging the bootstrap capacitor; the first and the second discharging transistor T13 and T14 for discharging the electric charge of the bootstrap capacitor; and the logical circuit which (i) turns on the first and the second discharging transistor, according to the driving pulse for each circuit of the other stages, and (ii) turns off the first and the second discharging transistor, according to the gate signal of the charging transistor.
摘要:
The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
摘要:
A capacitor includes a capacitor element, a collector plate joined to an electrode of the capacitor element, and a case accommodating the capacitor element and the collector plate. An inner surface of a bottom plate of the case has a contacting portion contacting the collector plate and a junction portion facing the collector plate. The junction portion of the inner surface of the bottom plate has a joining point joined to the collector plate and a separation part facing the collector plate around the joining point by a gap between the junction portion and the collector plate. The collector plate is located away from the contacting portion.
摘要:
A capacitor includes a capacitor element, a collector plate joined to an electrode of the capacitor element, and a case accommodating the capacitor element and the collector plate. An inner surface of a bottom plate of the case has a contacting portion contacting the collector plate and a junction portion facing the collector plate. The junction portion of the inner surface of the bottom plate has a joining point joined to the collector plate and a separation part facing the collector plate around the joining point by a gap between the junction portion and the collector plate. The collector plate is located away from the contacting portion.
摘要:
A solid-state imaging device is provided in which sensitivity is prevented from lowering even when signals of pixels are mixed. The solid-state imaging device includes a plurality of pixel units each of which has a photoelectric conversion element, and is capable of summing signals corresponding to respective outputs of the photoelectric conversion elements of the pixel units. The device includes: a plurality of capacitors, each of which individually accumulates electric charges corresponding to a signal outputted from the associated photoelectric conversion element; and a plurality of MOS transistors which are alternately connected with the associated capacitor. By disconnecting the MOS transistor, the electric charges of the signal outputted from each of the photoelectric conversion elements are accumulated in each associated capacitor, and by conducting the MOS transistors to sum the signals of the pixel units, the capacitors are connected in series.
摘要:
An optical interference filter whose major component is a film member. The film member includes a plurality of window regions arranged discretely in a surface direction selectively transmit, using an effect of optical interference, light having a waveband that substantially belongs to a visible spectrum, the plurality of window regions being arranged discretely in the surface direction, and one or more boundary regions selectively transmit, using the effect of the optical interference, light having a waveband that substantially belongs to an invisible spectrum excluding the visible spectrum, the one or more the boundary regions being located between adjacent window regions.
摘要:
In the case where a subject is captured with a high-luminance light, such as sunlight, for a background, a phenomenon that a portion of the high-luminance subject is detected as a no-signal level is prevented. The solid-state imaging device includes: a photoelectric transducer PD which converts incident light to charges; a voltage level detection circuit 50 in which pixel units 10an1 and 10bn1, each having a voltage conversion amplifying transistor Q13a which outputs a voltage by converting the charges accumulated in the photoelectric transducer PD, are arranged one-dimensionally or two-dimensionally, and which detects a pixel output voltage outputted from each of the pixel units to the common column signal line Ln; and a column signal processing circuit 80 which receives a logic output voltage of the voltage level detection circuit 50 and the pixel output voltage and which outputs a voltage to a horizontal output circuit 90. The column signal processing circuit 80 outputs either a voltage identical to the pixel output voltage or a fixed voltage, depending on the logic output voltage.
摘要:
A vehicle-mounted imaging device that is mounted in an automobile and performs color imaging has been provided with a plurality of two-dimensionally arranged pixel cells. In each of the pixels, a color filter separates incident light by a multilayer interference filter. The multilayer interference filter is composed of two λ/4 multilayer films and a spacer layer sandwiched therebetween. The multilayer interference filter transmits light in a wavelength region that corresponds to an optical thickness of the spacer layer. The λ/4 multilayer films and spacer layer are composed of inorganic materials.
摘要:
In an electric double-layer capacitor, resistance of a polarizable electrode layer is reduced and gas generation inside a case is suppressed in an attempt to improve reliability. On that account, an electric double-layer capacitor is provided, which is obtained by housing in a case, together with a driving electrolyte, a capacitor element wound with a separator interposed between electrodes being paired anode and cathode electrodes in each of which polarizable electrode layers are formed on and lead wires are fixed to both sides of a current collector made of metallic foil, such that the polarizable electrode layers are opposed to each other. Further, an electric double-layer capacitor is provided in which the lead wire is fixed to a polarizable-electrode-layer-removed section on the electrode where the polarizable electrode layer has been removed, and an area of the polarizable-electrode-layer-removed section is not smaller than 1 and not larger than 2.0 when a project area of a portion where the lead wire is connected with the current collector is set to 1.