Systems and methods for automatically biasing power amplifiers

    公开(公告)号:US10608595B1

    公开(公告)日:2020-03-31

    申请号:US16139761

    申请日:2018-09-24

    Applicant: NXP USA, Inc.

    Abstract: Power amplifiers, amplifier systems, and related methods are disclosed herein. In one example embodiment, the amplifier system includes a bias controller that automatically sets a bias voltage of a power amplifier device by monitoring a reference device that is in a scaled relationship with the power amplifier device, and integrally is formed with the power amplifier device on a same semiconductor die. The bias controller can compare a voltage at an input to the reference device to a reference voltage, and then adjust a voltage at a control input of the reference device to a stabilized voltage that induces the reference device to drive the voltage at the input to the reference device equal to the reference voltage. Finally, the bias controller can transform, based on the scaled relationship, the stabilized voltage into a bias voltage applied to a control input of the power amplifier device.

    Modifiable signal adjustment devices for power amplifiers and corresponding methods and apparatus

    公开(公告)号:US09979355B2

    公开(公告)日:2018-05-22

    申请号:US15393473

    申请日:2016-12-29

    Applicant: NXP USA, Inc.

    Abstract: An embodiment of an amplifier system includes a modifiable signal adjustment device with an RF signal adjustment circuit coupled between first and second nodes. The RF signal adjustment circuit includes an adjustable phase shifter and an adjustable attenuator coupled in series with each other. The device also includes a memory and a controller circuit. The controller circuit retrieves a phase shift value and an attenuation value from the memory. The controller circuit then controls the adjustable phase shifter to apply a phase shift corresponding to the phase shift value to an input RF signal received at the first node, and controls the adjustable attenuator to apply an attenuation corresponding to the attenuation value to the input RF signal. Applying the phase shift and the attenuation results in an output RF signal at the second node.

    DEVICES WITH SIGNAL AND TEMPERATURE CHARACTERISTIC DEPENDENT CONTROL CIRCUITRY AND METHODS OF OPERATION THEREFOR

    公开(公告)号:US20170257091A1

    公开(公告)日:2017-09-07

    申请号:US15601567

    申请日:2017-05-22

    Applicant: NXP USA, Inc.

    CPC classification number: H03K17/165 G06F1/3206 H03K17/162

    Abstract: An embodiment of a device includes a terminal, an active transistor die electrically coupled to the terminal, a detector configured to sense a signal characteristic on the terminal, and control circuitry electrically coupled to the active transistor die and to the detector, wherein the active transistor die, detector, and control circuitry are coupled to a package. The control circuitry may include a control element and a control device. Based on the signal characteristic, the control circuitry controls which of multiple operating states the device operates. A method for controlling the operating state of the device includes sensing, using the detector, a signal characteristic at the terminal, and determining, using the control device, whether the signal characteristic conforms to a pre-set criteria, and when the signal characteristic does not conform to the pre-set criteria, modifying the state of the control element to alter the operating state of the device.

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