公开(公告)号：US5768798A

公开(公告)日：1998-06-23

申请号：US597199

申请日：1996-02-06

申请人： Seigo Takahashi ,  Masamichi Suzuki ,  Hiroshi Kawai ,  Yukio Kageura

发明人： Seigo Takahashi ,  Masamichi Suzuki ,  Hiroshi Kawai ,  Yukio Kageura

IPC分类号： G01B3/22

CPC分类号： G01B3/22 ,  Y10S33/06

摘要： A back-plunger type displacement detecting apparatus is provided having a thinner case. The back-plunger type displacement detecting apparatus has a spindle secured to the case to extend perpendicular to the display surface of a digital display unit. A movable member is secured to the case and extends perpendicular to the direction of movement of the spindle. A converting mechanism converts the displacement of the spindle into displacement of the movable member. An electrical unit detects the displacement of the movable member and displays the detected value on the digital display unit.

摘要翻译： 提供具有较薄外壳的后柱塞式位移检测装置。 后柱塞型位移检测装置具有固定在壳体上以垂直于数字显示单元的显示表面延伸的心轴。 可移动部件被固定到壳体并且垂直于主轴的移动方向延伸。 A转换机构将主轴的位移转换成可动构件的位移。 电气单元检测可移动部件的位移并将检测到的值显示在数字显示单元上。

公开(公告)号：US4499123A

公开(公告)日：1985-02-12

申请号：US491022

申请日：1983-05-03

申请人： Masamichi Suzuki ,  Atsushi Sugihara ,  Tadaaki Sano ,  Toshihiro Suzuki

发明人： Masamichi Suzuki ,  Atsushi Sugihara ,  Tadaaki Sano ,  Toshihiro Suzuki

IPC分类号： C23C18/31 ,  B05D5/00

CPC分类号： C23C18/31

摘要： A two-step process for coating a surface of an aluminum article with zinc, wherein the surface is initially exposed to a zincate bath under relatively weak zinc-depositing conditions, and then further exposed to a zincate bath under stronger zinc-depositing conditions (lower ZnO concentration and/or higher temperature), to establish thereon an adherent coating of metallic zinc. The coated article may be heated to effect diffusion of the zinc into the aluminum for producing a zinc-enriched region adjacent the surface to protect the surface against corrosion.

摘要翻译： 用锌涂覆铝制品表面的两步法，其中表面最初在相对较弱的锌沉积条件下暴露于锌酸盐浴中，然后在更强的锌沉积条件下进一步暴露于锌酸盐浴（较低的 ZnO浓度和/或更高的温度），以在其上建立金属锌的粘附涂层。 可以加热涂覆的物品以使锌扩散到铝中，以在邻近表面产生富锌区域，以保护表面免受腐蚀。

公开(公告)号：US08849219B2

公开(公告)日：2014-09-30

申请号：US13599413

申请日：2012-08-30

申请人： Jun Deguchi ,  Shouhei Kousai ,  Yousuke Hagiwara ,  Masamichi Suzuki ,  Atsuhiro Kinoshita ,  Takao Marukame

发明人： Jun Deguchi ,  Shouhei Kousai ,  Yousuke Hagiwara ,  Masamichi Suzuki ,  Atsuhiro Kinoshita ,  Takao Marukame

IPC分类号： H04B1/38 ,  H03M1/66 ,  H03M1/10 ,  H03M1/74

CPC分类号： H03M1/66 ,  H03M1/1061 ,  H03M1/745

摘要： In general, according to one embodiment, a DA converter configured to convert a digital signal comprising n (n>1) bits to an analog current to output the analog current from an output terminal, includes n voltage-current converters. Each of them corresponds to each bit of the digital signal and is configured to generate a current depending on the corresponding bit. A k-th (k is an integer of 0 to n−1) voltage-current converter includes a first transistor whose threshold voltage is adjustable. The first transistor includes a semiconductor substrate, a first diffusion region, a second diffusion region, an insulating film, a charge accumulating film, and a gate.

摘要翻译： 通常，根据一个实施例，配置成将包括n（n> 1）位的数字信号转换为模拟电流以从输出端输出模拟电流的DA转换器包括n个电压 - 电流转换器。 它们中的每一个对应于数字信号的每个位，并且被配置为根据相应的位产生电流。 第k（k是0到n-1的整数）电压 - 电流转换器包括阈值电压可调的第一晶体管。 第一晶体管包括半导体衬底，第一扩散区，第二扩散区，绝缘膜，电荷累积膜和栅极。

公开(公告)号：US08681034B2

公开(公告)日：2014-03-25

申请号：US13536085

申请日：2012-06-28

申请人： Takao Marukame ,  Tetsufumi Tanamoto ,  Atsuhiro Kinoshita ,  Tomoaki Inokuchi ,  Masamichi Suzuki ,  Yoshiaki Saito

发明人： Takao Marukame ,  Tetsufumi Tanamoto ,  Atsuhiro Kinoshita ,  Tomoaki Inokuchi ,  Masamichi Suzuki ,  Yoshiaki Saito

IPC分类号： H03M1/34

CPC分类号： H03M1/1061 ,  H01L27/22 ,  H01L43/08 ,  H03M1/365

摘要： According to an embodiment, an analog-to-digital converter includes a voltage generating unit, and a plurality of comparators. The voltage generating unit is configured to divide a reference voltage by a plurality of variable resistors to generate a plurality of comparative voltages. Each of the plurality of comparator is configured to compare any one of the plurality of comparative voltages with an analog input voltage and output a digital signal based on a result of a comparison between the comparative voltage and the analog input voltage. Each of the plurality of variable resistors includes a plurality of variable resistive elements that are connected in series, and each of the plurality of variable resistive elements has a resistance value that is variably set according to an external signal.

摘要翻译： 根据实施例，模数转换器包括电压产生单元和多个比较器。 电压产生单元被配置为通过多个可变电阻器分压参考电压以产生多个比较电压。 多个比较器中的每一个被配置为将多个比较电压中的任何一个与模拟输入电压进行比较，并且基于比较电压和模拟输入电压之间的比较结果输出数字信号。 多个可变电阻器中的每一个包括串联连接的多个可变电阻元件，并且多个可变电阻元件中的每一个具有根据外部信号可变地设置的电阻值。

公开(公告)号：US08681033B2

公开(公告)日：2014-03-25

申请号：US13535118

申请日：2012-06-27

申请人： Takao Marukame ,  Tetsufumi Tanamoto ,  Atsuhiro Kinoshita ,  Tomoaki Inokuchi ,  Masamichi Suzuki ,  Yoshiaki Saito

发明人： Takao Marukame ,  Tetsufumi Tanamoto ,  Atsuhiro Kinoshita ,  Tomoaki Inokuchi ,  Masamichi Suzuki ,  Yoshiaki Saito

IPC分类号： H03M1/34

CPC分类号： H03M1/1061 ,  H03F3/45183 ,  H03F2203/45391 ,  H03F2203/45392 ,  H03F2203/45674 ,  H03K5/2481 ,  H03M1/365

摘要： According to an embodiment, an analog-to-digital converter includes a voltage generating unit to generate comparative voltages; and comparators. Each comparator compares any one of the comparative voltages with an analog input voltage and output a digital signal. Each comparator includes a differential pair circuit to detect a potential difference between two inputs. The differential pair circuit includes first and second circuit portions. The first circuit portion includes a first transistor having a gate to which one input is supplied; and a resistor connected in series with the first transistor. The second circuit portion includes a second transistor having a gate to which the other input is supplied and forms a differential pair with the first transistor; and a variable resistor connected in series with the second transistor. The variable resistor includes variable resistive elements each having a resistance value variably set according to a control signal.

摘要翻译： 根据实施例，模数转换器包括产生比较电压的电压产生单元; 和比较者。 每个比较器将比较电压中的任何一个与模拟输入电压进行比较，并输出数字信号。 每个比较器包括用于检测两个输入之间的电位差的差分对电路。 差分对电路包括第一和第二电路部分。 第一电路部分包括具有一个输入端的栅极的第一晶体管; 以及与第一晶体管串联连接的电阻器。 第二电路部分包括第二晶体管，其具有提供另一输入的栅极，并与第一晶体管形成差分对; 以及与第二晶体管串联连接的可变电阻器。 可变电阻器包括可变电阻元件，每个电阻元件具有根据控制信号可变地设置的电阻值。

公开(公告)号：US20110175187A1

公开(公告)日：2011-07-21

申请号：US12875534

申请日：2010-09-03

申请人： Risako Ueno ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Yoshinori Iida ,  Tatsuo Shimizu ,  Masamichi Suzuki

发明人： Risako Ueno ,  Kazuhiro Suzuki ,  Hideyuki Funaki ,  Yoshinori Iida ,  Tatsuo Shimizu ,  Masamichi Suzuki

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/1462 ,  H01L27/14629

摘要： Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.

摘要翻译： 某些实施例提供了一种固态成像装置，包括：光电转换单元，其包括设置在第一导电类型的半导体衬底上的第二导电类型的半导体层，将入射到半导体衬底的第一表面的入射光转换为信号电荷 ，并存储信号费用; 读出由光电转换单元存储的信号电荷的读出电路; 设置在半导体衬底的第一表面上以覆盖光电转换单元的半导体层的抗反射结构包括：固定电荷膜，其保持作为非信号电荷的固定电荷，并防止入射光的反射; 以及设置在光电转换单元和抗反射结构之间的孔存储区域，并且存储非信号电荷的空穴。

公开(公告)号：US20090114995A1

公开(公告)日：2009-05-07

申请号：US12200599

申请日：2008-08-28

申请人： Masamichi Suzuki ,  Masato Koyama ,  Yoshinori Tsuchiya ,  Hirotaka Nishino ,  Reika Ichihara ,  Akira Takashima

发明人： Masamichi Suzuki ,  Masato Koyama ,  Yoshinori Tsuchiya ,  Hirotaka Nishino ,  Reika Ichihara ,  Akira Takashima

IPC分类号： H01L27/08 ,  H01L21/3205

CPC分类号： H01L21/823857 ,  H01L21/26506 ,  H01L21/31155 ,  H01L21/823842 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/7842 ,  H01L29/7846 ,  H01L29/785

摘要： A complementary semiconductor device includes a semiconductor substrate, a first semiconductor region formed on a surface of the semiconductor substrate, a second semiconductor region formed on the surface of the semiconductor substrate apart from the first semiconductor region, an n-MIS transistor having a first gate insulating film including La and Al, formed on the first semiconductor region, and a first gate electrode formed on the gate insulating film, and a p-MIS transistor having a second gate insulating film including La and Al, formed on the second semiconductor region, and a second gate electrode formed on the gate insulating film, an atomic density ratio Al/La in the second gate insulating film being larger than an atomic density ratio Al/La in the first gate insulating film.

摘要翻译： 互补半导体器件包括半导体衬底，形成在半导体衬底的表面上的第一半导体区域，形成在半导体衬底的离开第一半导体区域的表面上的第二半导体区域，具有第一栅极的n-MIS晶体管 形成在第一半导体区域上的包括La和Al的绝缘膜和形成在栅极绝缘膜上的第一栅电极和形成在第二半导体区上的具有包括La和Al的第二栅极绝缘膜的p-MIS晶体管， 以及形成在所述栅极绝缘膜上的第二栅电极，所述第二栅极绝缘膜中的原子密度比Al / La大于所述第一栅极绝缘膜中的原子密度比Al / La。

公开(公告)号：US20080318404A1

公开(公告)日：2008-12-25

申请号：US12149572

申请日：2008-05-05

申请人： Masamichi Suzuki ,  Daisuke Matsushita ,  Takeshi Yamaguchi

发明人： Masamichi Suzuki ,  Daisuke Matsushita ,  Takeshi Yamaguchi

IPC分类号： H01L21/28

CPC分类号： H01L29/517 ,  H01L21/2807 ,  H01L21/28194 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/513

摘要： A semiconductor device includes a silicon substrate; an insulation layer formed on the silicon substrate, the insulation layer containing an oxide of an element of at least one kind selected from at least Hf, Zr, Ti and Ta; an electrode formed on the insulation layer; and a metal oxide layer containing La and Al, the metal oxide layer being provided at at least one of an interface between the silicon substrate and the insulation layer and an interface between the insulation layer and the electrode.

摘要翻译： 半导体器件包括硅衬底; 形成在所述硅基板上的绝缘层，所述绝缘层含有至少一种选自Hf，Zr，Ti和Ta中的至少一种元素的氧化物; 形成在所述绝缘层上的电极; 以及包含La和Al的金属氧化物层，所述金属氧化物层设置在所述硅衬底和所述绝缘层之间的界面中的至少一个以及所述绝缘层和所述电极之间的界面。

公开(公告)号：US20080047158A1

公开(公告)日：2008-02-28

申请号：US11889894

申请日：2007-08-17

申请人： Osamu Saito ,  Masamichi Suzuki

发明人： Osamu Saito ,  Masamichi Suzuki

IPC分类号： G01B5/14

CPC分类号： G01B3/205 ,  F16D7/048

摘要： A caliper gauge (1) includes a feeding mechanism (12) that moves a slider (11) along a main scale (10), in which the feeding mechanism (12) includes: an outer roller (121); an inner roller (122) provided in a manner rotatable around a rotary axis of the outer roller (121) to be in contact with the main scale (10); and a constant-pressure unit (123) that transmits the rotation of the outer roller (121) to the inner roller (122) and allows free rotation of the outer roller (121) relative to the inner roller (122) when more than a predetermined load is applied on the inner roller (122), the constant-pressure unit (123) including: saw-toothed projections provided on an inner circumference of the outer roller (121); and a plate spring fixed on an outer circumference of the inner roller (122) at a midsection thereof and contacted with the saw-toothed projections of the outer roller (121) on both ends thereof.

摘要翻译： 卡钳式计量器（1）包括沿主秤（10）移动滑块（11）的进给机构（12），其中进给机构（12）包括：外辊（121）; 以能够绕所述外辊（121）的旋转轴线旋转的方式设置成与所述主秤（10）接触的内辊（122）。 以及将所述外辊（121）的旋转传递到所述内辊（122）并允许所述外辊（121）相对于所述内辊（122）自由旋转的定压单元（123），当多于 规定的载荷被施加在内滚子（122）上，恒压单元（123）包括：设置在外滚子（121）的内圆周上的锯齿形突起; 以及固定在内辊（122）的外周上的板簧，其两端部与外辊（121）的锯齿状突起抵接。

公开(公告)号：US20060186489A1

公开(公告)日：2006-08-24

申请号：US11407077

申请日：2006-04-20

申请人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

发明人： Masahiro Koike ,  Masato Koyama ,  Tsunehiro Ino ,  Yuuichi Kamimuta ,  Akira Takashima ,  Masamichi Suzuki ,  Akira Nishiyama

IPC分类号： H01L29/94

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518

摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.