Laser Device
    31.
    发明申请
    Laser Device 失效
    激光设备

    公开(公告)号:US20080095204A1

    公开(公告)日:2008-04-24

    申请号:US11628414

    申请日:2005-07-08

    IPC分类号: H01S5/024

    摘要: A laser apparatus (100) has a semiconductor laser device (12a to 12c), coolant jetting means (24), and a heatsink (18a to 18c). The semiconductor laser device has a light output surface (50) for emitting laser light. The coolant jetting means has a coolant chamber (53) for accommodating a coolant, an inflow port (54) communicating with the coolant chamber, and a jet port (25) opposing the light output surface of the laser device. The heatsink has a laser mount surface (36) for mounting the semiconductor laser device, and a flow path (68a to 68c) where the coolant (56) jetted from the jet port flows in. When the coolant chamber is fed with the coolant, the jet port jets the coolant onto the light output surface of the semiconductor laser device. Since the light output surface is directly cooled by a jet flow of the coolant, cooling efficiency is excellent.

    摘要翻译: 激光装置(100)具有半导体激光装置(12a至12c),冷却剂喷射装置(24)和散热器(18a至18c)。 半导体激光装置具有用于发射激光的光输出表面(50)。 冷却剂喷射装置具有用于容纳冷却剂的冷却剂室(53),与冷却剂室连通的流入口(54)和与激光装置的光输出表面相对的喷射口(25)。 散热器具有用于安装半导体激光器件的激光器安装表面(36)和从喷射口喷射的冷却剂(56)流入的流路(68a至68c)。当冷却剂室被供给 喷射口将冷却剂喷射到半导体激光装置的光输出表面上。 由于光输出表面被冷却剂的喷射流直接冷却,所以冷却效率优异。

    Semiconductor Laser Device and Semiconductor Laser Element Array
    32.
    发明申请
    Semiconductor Laser Device and Semiconductor Laser Element Array 失效
    半导体激光器件和半导体激光元件阵列

    公开(公告)号:US20070230528A1

    公开(公告)日:2007-10-04

    申请号:US11596249

    申请日:2005-06-23

    IPC分类号: H01S5/20

    CPC分类号: H01S5/22

    摘要: The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces. In this case, the relative angle of the side surfaces in the first portion to the light emitting surface and light reflecting surface is different from the relative angle of the side surfaces in the second portion to the light emitting surface and light reflecting surface.

    摘要翻译: 本发明涉及例如能够以更简单的结构有效地发射具有小发射角的激光束的半导体激光元件。 半导体激光元件包括第一半导体部分,有源层和第二半导体部分。 第一半导体部分具有用于在有源层中形成折射率型波导区域的脊部分。 波导区域至少包括在其侧表面具有各自不同的全反射临界角的第一和第二部分。第一和第二部分被布置成使得其侧表面相对于发光表面的相对角度和 位于有源层的任一端的光反射表面大于侧表面处的全反射临界角。 在这种情况下,第一部分中的侧表面与发光表面和光反射表面的相对角度与第二部分中的侧表面相对于发光表面和光反射表面的相对角度不同。

    Heat sink and semiconductor laser apparatus and semiconductor laser stack apparatus using the same
    33.
    发明授权
    Heat sink and semiconductor laser apparatus and semiconductor laser stack apparatus using the same 失效
    散热器和半导体激光装置及使用其的半导体激光堆叠装置

    公开(公告)号:US06895026B2

    公开(公告)日:2005-05-17

    申请号:US09773509

    申请日:2001-02-02

    IPC分类号: H01L23/473 H05K7/20 H01S3/04

    摘要: A semiconductor laser stack apparatus 1 comprises three semiconductor lasers 2a to 2c, two copper plates 3a and 3b, two lead plates 4a and 4b, a supply tube 5, a discharge tube 6, four insulating members 7a to 7d, and three heat sinks 10a to 10c. Here, the heat sink 10a to 10c is formed by a lower planar member 12 formed with a supply water path groove portion 22, an intermediate planar member 14 formed with a plurality of water guiding holes 38, and an upper planar member 16 formed with a discharge water path groove portion 30 which are successively stacked one upon another, whereas their contact surfaces are joined together. The heat sink 10a to 10c is provided with pillar pieces 24 for connecting the bottom face of supply water path groove portion 22 and the lower face of intermediate planar member 14 to each other, and pillar pieces 32 for connecting the bottom face of discharge water path groove portion 30 and the upper face of intermediate planar member 14 to each other.

    摘要翻译: 半导体激光器堆叠装置1包括三个半导体激光器2a至2c,两个铜板3a和3b,两个引线板4a和4b,供应管5,放电管6,四个绝缘构件7a至 7d,以及三个散热片10a〜10c。 这里,散热器10a〜10c由形成有供水路径槽部22的下平面部件12,形成有多个导水孔38的中间平面部件14和形成有上部平面部件16的下部平面部件12形成 具有相继层叠的排水路径槽部30,而其接触面接合在一起。 散热片10 a至10 c设置有用于将供水路径槽部22的底面和中间平面构件14的下表面彼此连接的支柱24,以及用于连接排出口的底面的支柱32 水通道槽部30和中间平面状部件14的上表面。

    LASER MODULE
    35.
    发明申请
    LASER MODULE 有权
    激光模块

    公开(公告)号:US20120014402A1

    公开(公告)日:2012-01-19

    申请号:US13256657

    申请日:2010-05-21

    IPC分类号: H01S3/14

    摘要: A laser module LM is provided with a quantum cascade laser 1, a tubular member 5, and an infrared detector 7. The tubular member 5 has a pair of opening ends 5a, 5b and is arranged so that one opening end 5a is opposed to a face 1b opposed to an emitting end face 1a of the quantum cascade laser 1. The infrared detector 7 is arranged so as to be opposed to the other opening end 5b of the tubular member 5. Light emitted from the face (rear end face) 1b opposed to the emitting end face (front end face) 1a of the quantum cascade laser 1 is guided inside the tubular member 5 to enter the infrared detector 7, and then is detected.

    摘要翻译: 激光模块LM设置有量子级联激光器1,管状部件5和红外线检测器7.管状部件5具有一对开口端部5a,5b,并且布置成使得一个开口端部5a与 面1b与量子级联激光器1的发射端面1a相对。红外线检测器7被布置成与管状部件5的另一个开口端5b相对。从面(后端面)1b发射的光 与量子级联激光器1的发射端面(前端面)1a相对的方向被引导到管状部件5内,进入红外线检测器7,然后被检测。

    FUEL CELL
    36.
    发明申请
    FUEL CELL 审中-公开
    燃料电池

    公开(公告)号:US20110275003A1

    公开(公告)日:2011-11-10

    申请号:US13185971

    申请日:2011-07-19

    IPC分类号: H01M8/10

    摘要: A fuel cell includes: an anode catalyst layer containing an anode catalyst and a proton-conductive electrolyte; a cathode catalyst layer containing a cathode catalyst and a proton-conductive electrolyte; a proton-conductive electrolyte membrane interposed between the anode catalyst layer and the cathode catalyst layer; and a mechanism supplying a fuel to the anode catalyst layer, wherein a porosity of the anode catalyst layer as measured by a mercury intrusion porosimeter is 0 to 30%.

    摘要翻译: 燃料电池包括:含有阳极催化剂和质子传导电解质的阳极催化剂层; 含有阴极催化剂和质子传导电解质的阴极催化剂层; 介于阳极催化剂层和阴极催化剂层之间的质子传导电解质膜; 以及向阳极催化剂层供给燃料的机构,其中,通过水银侵入孔隙率计测定的阳极催化剂层的孔隙率为0〜30%。

    SOLID-STATE LASER DEVICE
    37.
    发明申请
    SOLID-STATE LASER DEVICE 审中-公开
    固态激光器件

    公开(公告)号:US20110176574A1

    公开(公告)日:2011-07-21

    申请号:US13055995

    申请日:2009-06-10

    IPC分类号: H01S3/08

    摘要: A solid-state laser apparatus 1 bounces laser light L2 between an end mirror 3 and an output mirror 4 via a slab-type solid-state laser medium 2 excited by excitation light L1 to thereby amplify and output the laser light L2. The solid-state laser medium 2 includes incident/exit end faces 2a, 2b on and from which the laser light L2 is made incident and exits, and reflecting end faces 2c, 2d which reflect the laser light L2 so that the incident laser light L2 propagates in a zigzag manner. The incident/exit end face 2a is made incident with the excitation light L1 so that the excitation light L1 propagates along substantially the same propagation path as that of the laser light L2 within the solid-state laser medium 2. Accordingly, a solid-state laser apparatus which can improve the coupling efficiency between the excitation light and the laser light is realized.

    摘要翻译: 固体激光装置1经由激发光L1激发的板状固体激光介质2在端镜3和输出反射镜4之间反射激光L2,从而放大并输出激光L2。 固态激光介质2包括激光L2入射并离开的入射/出射端面2a,2b,反射激光L2的反射端面2c,2d,使入射激光L2 以锯齿形的方式传播。 入射/出射端面2a与激发光L1入射,使得激发光L1沿与固体激光介质2内的激光L2的传播路径基本相同的传播路径传播。因此,固态 实现了可以提高激发光和激光之间的耦合效率的激光装置。

    Transmission type photocathode including light absorption layer and voltage applying arrangement and electron tube
    39.
    发明授权
    Transmission type photocathode including light absorption layer and voltage applying arrangement and electron tube 失效
    透射型光电阴极包括光吸收层和电压施加装置和电子管

    公开(公告)号:US07652425B2

    公开(公告)日:2010-01-26

    申请号:US10504979

    申请日:2003-02-24

    IPC分类号: H01J40/00 H01J40/16

    摘要: A transmission type photocathode includes a light absorption layer 1 formed of diamond or a material containing diamond as a main component, a supporting frame 21 for reinforcing the mechanical strength of the light absorption layer 1, a first electrode 31 provided at the plane of incidence of the light absorption layer 1, and a second electrode 32 provided at the plane of emission of the light absorption layer 1. A voltage is applied between the plane of incidence and plane of emission of the light absorption layer 1 to form an electric field in the light absorption layer 1. When light to be detected is made incident and photoelectrons occur in the light absorption layer 1, the photoelectrons are accelerated to the plane of emission by the electric field formed in the light absorption layer 1, and emitted to the outside of the transmission type photocathode.

    摘要翻译: 透射型光电阴极包括由金刚石形成的光吸收层1或含有金刚石作为主要成分的材料,用于增强光吸收层1的机械强度的支撑框架21,设置在该入射平面上的第一电极31 光吸收层1和设置在光吸收层1的发射平面处的第二电极32.在光吸收层1的入射平面和发射平面之间施加电压,以在光吸收层1中形成电场。 光吸收层1.当在光吸收层1中发生待检测的光入射光电子时,光电子通过形成在光吸收层1中的电场而被加速到发射平面,并且发射到 透射型光电阴极。

    PHOTOCATHODE AND ELECTRON TUBE HAVING THE SAME
    40.
    发明申请
    PHOTOCATHODE AND ELECTRON TUBE HAVING THE SAME 审中-公开
    具有相同的光电管和电子管

    公开(公告)号:US20090273281A1

    公开(公告)日:2009-11-05

    申请号:US12432850

    申请日:2009-04-30

    IPC分类号: H01J40/06 H01L29/12

    摘要: The photocathode of the present invention is provided with a supporting substrate composed of a single-crystal compound semiconductor, a light absorbing layer which is formed on the supporting substrate and smaller in an energy band gap than the supporting substrate to absorb incident light transmitted through the supporting substrate, thereby generating photoelectrons, and a surface layer which is formed on the light absorbing layer to lower a work function of the light absorbing layer, in which the supporting substrate comprises Al(1−x)GaxN (0≦X

    摘要翻译: 本发明的光电阴极设置有由单晶化合物半导体构成的支撑基板,形成在支撑基板上的光吸收层,并且与支撑基板相比能量带隙更小,以吸收透过该基板的入射光 支撑基板,从而产生光电子;以及表面层,其形成在光吸收层上以降低光吸收层的功函数,其中支撑衬底包括Al(1-x)GaxN(0≤x≤1 ),并且光吸收层包括由选自Al,Ga和In以及N中的至少一种材料构成的化合物半导体。