摘要:
A laser apparatus (100) has a semiconductor laser device (12a to 12c), coolant jetting means (24), and a heatsink (18a to 18c). The semiconductor laser device has a light output surface (50) for emitting laser light. The coolant jetting means has a coolant chamber (53) for accommodating a coolant, an inflow port (54) communicating with the coolant chamber, and a jet port (25) opposing the light output surface of the laser device. The heatsink has a laser mount surface (36) for mounting the semiconductor laser device, and a flow path (68a to 68c) where the coolant (56) jetted from the jet port flows in. When the coolant chamber is fed with the coolant, the jet port jets the coolant onto the light output surface of the semiconductor laser device. Since the light output surface is directly cooled by a jet flow of the coolant, cooling efficiency is excellent.
摘要:
The present invention relates to, for example, a semiconductor laser element capable of emitting laser beams having a small emitting angle efficiently with a simpler structure. The semiconductor laser element includes a first semiconductor portion, an active layer, and a second semiconductor portion. The first semiconductor portion has a ridge portion for forming a refractive index type waveguide region in the active layer. The waveguide region includes, at least, first and second portions having respective different total reflection critical angles at the side surfaces thereof The first and second portions are arranged in such a manner that the relative angle of the side surfaces thereof to a light emitting surface and a light reflecting surface that are positioned at either end of the active layer is greater than the total reflection critical angle at the side surfaces. In this case, the relative angle of the side surfaces in the first portion to the light emitting surface and light reflecting surface is different from the relative angle of the side surfaces in the second portion to the light emitting surface and light reflecting surface.
摘要:
A semiconductor laser stack apparatus 1 comprises three semiconductor lasers 2a to 2c, two copper plates 3a and 3b, two lead plates 4a and 4b, a supply tube 5, a discharge tube 6, four insulating members 7a to 7d, and three heat sinks 10a to 10c. Here, the heat sink 10a to 10c is formed by a lower planar member 12 formed with a supply water path groove portion 22, an intermediate planar member 14 formed with a plurality of water guiding holes 38, and an upper planar member 16 formed with a discharge water path groove portion 30 which are successively stacked one upon another, whereas their contact surfaces are joined together. The heat sink 10a to 10c is provided with pillar pieces 24 for connecting the bottom face of supply water path groove portion 22 and the lower face of intermediate planar member 14 to each other, and pillar pieces 32 for connecting the bottom face of discharge water path groove portion 30 and the upper face of intermediate planar member 14 to each other.
摘要:
A radiation generating apparatus comprises a fuel storage unit 20 for storing a mixed liquid 61, a pressure application unit 10 for applying a pressure to the mixed liquid 61, a jet formation unit 30 for forming a jet 61a of the mixed liquid 61, a reaction unit 44 for forming the jet 61a of the mixed liquid 61 therein, a pressure adjustment unit 41 for setting a pressure in the reaction unit 44 lower than an internal pressure of the jet formation unit 30, and a light source unit 45 for irradiating a particle group 63a with laser light L1.
摘要:
A laser module LM is provided with a quantum cascade laser 1, a tubular member 5, and an infrared detector 7. The tubular member 5 has a pair of opening ends 5a, 5b and is arranged so that one opening end 5a is opposed to a face 1b opposed to an emitting end face 1a of the quantum cascade laser 1. The infrared detector 7 is arranged so as to be opposed to the other opening end 5b of the tubular member 5. Light emitted from the face (rear end face) 1b opposed to the emitting end face (front end face) 1a of the quantum cascade laser 1 is guided inside the tubular member 5 to enter the infrared detector 7, and then is detected.
摘要:
A fuel cell includes: an anode catalyst layer containing an anode catalyst and a proton-conductive electrolyte; a cathode catalyst layer containing a cathode catalyst and a proton-conductive electrolyte; a proton-conductive electrolyte membrane interposed between the anode catalyst layer and the cathode catalyst layer; and a mechanism supplying a fuel to the anode catalyst layer, wherein a porosity of the anode catalyst layer as measured by a mercury intrusion porosimeter is 0 to 30%.
摘要:
A solid-state laser apparatus 1 bounces laser light L2 between an end mirror 3 and an output mirror 4 via a slab-type solid-state laser medium 2 excited by excitation light L1 to thereby amplify and output the laser light L2. The solid-state laser medium 2 includes incident/exit end faces 2a, 2b on and from which the laser light L2 is made incident and exits, and reflecting end faces 2c, 2d which reflect the laser light L2 so that the incident laser light L2 propagates in a zigzag manner. The incident/exit end face 2a is made incident with the excitation light L1 so that the excitation light L1 propagates along substantially the same propagation path as that of the laser light L2 within the solid-state laser medium 2. Accordingly, a solid-state laser apparatus which can improve the coupling efficiency between the excitation light and the laser light is realized.
摘要:
A fuel cell comprising a cathode catalyst layer, an anode catalyst layer including a conductive perfluoro-binder having a micellar structure formed by outwardly orienting hydrophilic groups and inwardly orienting hydrophobic (lipophilic) groups, and a proton conductive membrane provided between the cathode catalyst layer and the anode catalyst layer.
摘要:
A transmission type photocathode includes a light absorption layer 1 formed of diamond or a material containing diamond as a main component, a supporting frame 21 for reinforcing the mechanical strength of the light absorption layer 1, a first electrode 31 provided at the plane of incidence of the light absorption layer 1, and a second electrode 32 provided at the plane of emission of the light absorption layer 1. A voltage is applied between the plane of incidence and plane of emission of the light absorption layer 1 to form an electric field in the light absorption layer 1. When light to be detected is made incident and photoelectrons occur in the light absorption layer 1, the photoelectrons are accelerated to the plane of emission by the electric field formed in the light absorption layer 1, and emitted to the outside of the transmission type photocathode.
摘要:
The photocathode of the present invention is provided with a supporting substrate composed of a single-crystal compound semiconductor, a light absorbing layer which is formed on the supporting substrate and smaller in an energy band gap than the supporting substrate to absorb incident light transmitted through the supporting substrate, thereby generating photoelectrons, and a surface layer which is formed on the light absorbing layer to lower a work function of the light absorbing layer, in which the supporting substrate comprises Al(1−x)GaxN (0≦X