公开(公告)号：US20100237449A1

公开(公告)日：2010-09-23

申请号：US12739990

申请日：2008-10-28

申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Norikazu Ohshima

发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Norikazu Ohshima

IPC分类号： H01L29/82

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

摘要： A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magnetization free layer on an opposite side of the second magnetization free layer. The first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction. On the other hand, the second magnetization free layer and the first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction. The first magnetization free layer includes: a first magnetization fixed region having a fixed magnetization; a second magnetization fixed region having a fixed magnetization; and a magnetization free region connected to the first and second magnetization fixed regions and having a reversible magnetization. The magnetization free region and the second magnetization free layer are magnetically coupled. In addition, the center of mass of the magnetization free region and the center of mass of the second magnetization free layer are displaced in a particular in-plane direction.

摘要翻译： 磁阻元件设置有第一磁化自由层; 第二磁化自由层; 邻近所述第二磁化自由层设置的非磁性层; 以及在所述第二磁化自由层的相对侧上邻近所述第二磁化自由层设置的第一磁化固定层。 第一磁化自由层由铁磁材料形成，并且在厚度方向上具有磁各向异性。 另一方面，第二磁化自由层和第一磁化固定层由铁磁材料形成，并且在面内方向上具有磁各向异性。 第一磁化自由层包括：具有固定磁化强度的第一磁化固定区; 具有固定磁化强度的第二磁化固定区域; 以及与第一和第二磁化固定区域连接并具有可逆磁化强度的无磁化区域。 磁化自由区​​和第二磁化自由层磁耦合。 此外，无磁化区域的质心和第二磁化自由层的质心在特定的面内方向上移位。

公开(公告)号：US20100214826A1

公开(公告)日：2010-08-26

申请号：US12678538

申请日：2008-07-07

申请人： Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Norikazu Ohshima ,  Nobuyuki Ishiwata

发明人： Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Norikazu Ohshima ,  Nobuyuki Ishiwata

IPC分类号： G11C11/02 ,  H01L29/82

CPC分类号： B82Y10/00 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

摘要： A magnetic random access memory includes: a first ferromagnetic layet; an insulating layer provided adjacent to the first ferromagnetic layer; and a first magnetization pinned layer provided adjacent to the insulating layer on a side opposite to the first ferromagnetic layer. The first ferromagnetic layer includes a magnetization free region, a first magnetization pinned region, and a second magnetization pinned region. The magnetization free region has reversible magnetization, and overlaps with the second ferromagnetic layer. The first magnetization pinned region has first pinned magnetization, and is connected to a part of the magnetization free region. The second magnetization pinned region has second pinned magnetization, and is connected to a part of the magnetization free region. The first ferromagnetic layer has magnetic anisotropy in a direction perpendicular to a film surface. The first pinned magnetization and the second pinned magnetization are pinned antiparallel to each other in the direction perpendicular to the film surface.

摘要翻译： 磁性随机存取存储器包括：第一铁磁层; 与所述第一铁磁层相邻设置的绝缘层; 以及在与第一铁磁层相反的一侧与绝缘层相邻设置的第一磁化固定层。 第一铁磁层包括无磁化区域，第一磁化固定区域和第二磁化固定区域。 无磁化区域具有可逆磁化强度，并与第二铁磁层重叠。 第一磁化钉扎区域具有第一钉扎磁化，并且连接到无磁化区域的一部分。 第二磁化钉扎区域具有第二钉扎磁化，并且连接到无磁化区域的一部分。 第一铁磁层在垂直于膜表面的方向上具有磁各向异性。 第一钉扎磁化和第二钉扎磁化在垂直于膜表面的方向上彼此反平行地被钉住。

公开(公告)号：US20100142264A1

公开(公告)日：2010-06-10

申请号：US11996711

申请日：2006-08-04

申请人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

发明人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

IPC分类号： G11C11/14 ,  H01L29/82 ,  G11C7/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.

摘要翻译： 本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。 磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和 第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域 方向。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

公开(公告)号：US07161774B2

公开(公告)日：2007-01-09

申请号：US11376290

申请日：2006-03-16

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US06999287B2

公开(公告)日：2006-02-14

申请号：US10803144

申请日：2004-03-18

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US20050219772A1

公开(公告)日：2005-10-06

申请号：US11139680

申请日：2005-05-31

申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Tsutomu Ishi ,  Hiroaki Honjou ,  Kunihiko Ishihara ,  Jun-Ichi Fujikata ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Tsutomu Ishi ,  Hiroaki Honjou ,  Kunihiko Ishihara ,  Jun-Ichi Fujikata ,  Hisao Matsutera ,  Hisanao Tsuge ,  Atsushi Kamijo

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967

摘要： In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the free layer, thus biasing a magnetization direction of the free layer so that the magnetization direction of the free layer coincides with that of the longitudinal bias layer.

公开(公告)号：US06934132B2

公开(公告)日：2005-08-23

申请号：US09916529

申请日：2001-07-30

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G01R31/317 ,  G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/32

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed inmediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

摘要翻译： 磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。 在下导电层上提供自由层。 在自由层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不立即放置在垂直偏置层上方。 非磁性层，固定层，固定层和上层被埋在绝缘层中。 此外，在上层和绝缘层上设置有上导电层。 在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层和垂直偏置之间的距离 层保持不变。

公开(公告)号：US06754051B2

公开(公告)日：2004-06-22

申请号：US10446106

申请日：2003-05-28

申请人： Nobuyuki Ishiwata

发明人： Nobuyuki Ishiwata

IPC分类号： G11B527

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3929 ,  G11B5/4826

摘要： In a spin valve type transducer including two magnetic shield layers, a patterned magnetoresistance element is in direct contact with one of the magnetic shield layers. A permanent magnet layer and an electrode layer are formed on the sides of the patterned magnetoresistance element.

摘要翻译： 在包括两个磁屏蔽层的自旋阀型换能器中，图案化磁阻元件与磁屏蔽层之一直接接触。 在图案化磁阻元件的侧面上形成永磁体层和电极层。

公开(公告)号：US06687082B1

公开(公告)日：2004-02-03

申请号：US09676788

申请日：2000-10-02

申请人： Nobuyuki Ishiwata ,  Tsutomu Ishi ,  Mikiko Saito ,  Hiroaki Honjo ,  Shinsaku Saito ,  Tamaki Toba ,  Yoshihiro Nonaka

发明人： Nobuyuki Ishiwata ,  Tsutomu Ishi ,  Mikiko Saito ,  Hiroaki Honjo ,  Shinsaku Saito ,  Tamaki Toba ,  Yoshihiro Nonaka

IPC分类号： G11B5147

CPC分类号： G11B5/3153 ,  G11B5/3163 ,  Y10T29/49044

摘要： A magnetic head and a manufacturing method of the magnetic head and a magnetic recording and reproducing apparatus used this head, in which the following problem is solved, are provided. A plated film realizing large saturation magnetization Bs about 2T can not realize a high resistivity at the same time, therefore, when this plated film is applied to a magnetic head, the high frequency characteristic is deteriorated. This problem is solved at the present invention. Further, the present invention provides a magnetic head that is low cost and has large saturation magnetization Bs, and has a excellent high frequency characteristic suitable for a high density recording. A magnetic head, in which a coil insulated by insulation layers is disposed between a first magnetic core for recording and a second magnetic core for recording that is disposed to face the first magnetic core for recording via a recording gap, and which executes recording by that a magnetic flux of the first and second magnetic cores for recording excited by the coil is generated from the recording gap, is provided. And at least one of the first and second magnetic cores for recording is composed of a first plated magnetic layer and a second plated magnetic layer in a state that the first plated magnetic layer is disposed at the near side of the recording gap, and saturation magnetization of the first plated magnetic layer is 1.7 T (tesla) or more. And when resistivity of the first plated magnetic layer is defined as &rgr;1 and the thickness of the first plated magnetic layer is defined as &dgr;1, and resistivity of the second plated magnetic layer is defined as &rgr;2, and the thickness of the second plated magnetic layer is defined as &dgr;2, &rgr;1

摘要翻译： 提供了磁头和磁头的制造方法以及使用该磁头的磁记录和再现装置，其中解决了以下问题。 实现大约2T的饱和磁化强度Bs的电镀膜不能同时实现高电阻率，因此当将该镀膜施加到磁头时，高频特性劣化。 在本发明中解决了这个问题。 此外，本发明提供一种低成本，饱和磁化强度高的磁头，并且具有优良的高密度记录特性。 一种磁头，其中通过绝缘层绝缘的线圈被设置在用于记录的第一磁芯和用于记录的第二磁芯之间，用于记录的第二磁芯经由记录间隙设置成面对第一磁芯进行记录，并且执行记录 提供了从记录间隙产生由线圈激发的记录的第一和第二磁芯的磁通量。 并且，第一和第二记录用磁芯中的至少一个由第一镀层磁性层和第二镀覆磁性层构成，第一镀层磁性层设置在记录间隙的近侧，饱和磁化强度 的第一镀层磁性层为1.7T（特斯拉）或更高。 并且，将第一镀层磁性层的电阻率定义为rho1，将第一镀覆磁性层的厚度定义为δ1，将第二镀覆磁性层的电阻率定义为rho2，将第二镀覆磁性层的厚度设为 定义为δ2，rho1

公开(公告)号：US06341053B1

公开(公告)日：2002-01-22

申请号：US09182671

申请日：1998-10-30

申请人： Masafumi Nakada ,  Hisanao Tsuge ,  Yuji Tsukamoto ,  Hisao Matsutera ,  Nobuyuki Ishiwata ,  Atsushi Kamijo

发明人： Masafumi Nakada ,  Hisanao Tsuge ,  Yuji Tsukamoto ,  Hisao Matsutera ,  Nobuyuki Ishiwata ,  Atsushi Kamijo

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/06 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/3268 ,  H01L43/08

摘要： The present invention provides a magnetic tunnel junction device for an external magnetic field sensor. The device comprises a stack of multi-layers, which include a first antiferromagnetic pinning layer, a ferromagnetic free layer, a tunneling barrier layer, a ferromagnetic pinned layer, and a second antiferromagnetic pinning layer. The first pinning layer has a first pinning field, which pins a magnetization of the free layer in a track width direction. The second pinning layer has a second pinning field, which pins a magnetization of the pinned layer in a direction in the plane of the stacked layers of the magnetic tunnel junction, along the applied external magnetic field direction.

摘要翻译： 本发明提供一种用于外部磁场传感器的磁性隧道结装置。 该装置包括多层堆叠，其包括第一反铁磁钉扎层，铁磁自由层，隧道势垒层，铁磁钉扎层和第二反铁磁钉扎层。 第一钉扎层具有第一钉扎场，其引导自由层在轨道宽度方向上的磁化。 第二钉扎层具有第二钉扎场，其沿着所施加的外部磁场方向在磁性隧道结的堆叠层的平面的方向上引导钉扎层的磁化。