Edge reflection reduction
    31.
    发明授权

    公开(公告)号:US10147751B2

    公开(公告)日:2018-12-04

    申请号:US15945530

    申请日:2018-04-04

    Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. The method further includes removing portions of the transparent shield to form recessed regions in the transparent shield, where lateral bounds of the transparent shield extend beyond lateral bounds of the pixel array, and wherein the recessed regions are disposed in portions of the transparent shield that extend beyond the lateral bounds of the pixel array. The recessed regions are filled with a light blocking layer.

    Color image sensor with metal mesh to detect infrared light

    公开(公告)号:US09674493B2

    公开(公告)日:2017-06-06

    申请号:US14222901

    申请日:2014-03-24

    Abstract: An image sensor includes a pixel array with a plurality of pixels arranged in a semiconductor layer. A color filter array including a plurality of groupings of filters is disposed over the pixel array. Each filter is optically coupled to a corresponding one of the plurality of pixels. Each one of the plurality of groupings of filters includes a first, a second, a third, and a fourth filter having a first, a second, the second, and a third color, respectively. A metal layer is disposed over the pixel array and is patterned to include a metal mesh having mesh openings with a size and pitch to block incident light having a fourth color from reaching the corresponding pixel. The metal layer is patterned to include openings without the metal mesh to allow the incident light to reach the other pixels.

    High dynamic range image sensor with reduced sensitivity to high intensity light
    33.
    发明授权
    High dynamic range image sensor with reduced sensitivity to high intensity light 有权
    高动态范围图像传感器,对高强度光线的灵敏度降低

    公开(公告)号:US09590005B1

    公开(公告)日:2017-03-07

    申请号:US15005672

    申请日:2016-01-25

    Abstract: An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.

    Abstract translation: 图像传感器包括在半导体衬底中彼此散布的第一和第二多个光电二极管。 入射光将被引导通过半导体衬底的表面进入第一和第二多个光电二极管。 与第二多个光电二极管相比,第一多个光电二极管对入射光的灵敏度更高。 金属膜层设置在第二多个光电二极管的半导体衬底的表面上,而不是在第一多个光电二极管上。 金属栅格设置在半导体衬底的表面上,并且包括第一多个开口,入射光通过该开口被引导到第一多个光电二极管中。 金属栅格还包括第二多个开口,入射光通过该第二多个开口被引导通过金属膜层进入第二多个光电二极管。

    Dual-mode image sensor with a signal-separating color filter array, and method for same
    34.
    发明授权
    Dual-mode image sensor with a signal-separating color filter array, and method for same 有权
    具有信号分离滤色器阵列的双模式图像传感器及其方法

    公开(公告)号:US09570491B2

    公开(公告)日:2017-02-14

    申请号:US14510025

    申请日:2014-10-08

    Abstract: A dual-mode image sensor with a signal-separating CFA includes a substrate including a plurality of photodiode regions and a plurality of tall spectral filters having a uniform first height and for transmitting a first electromagnetic wavelength range. Each of the tall spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of short spectral filters for transmitting one or more spectral bands within a second electromagnetic wavelength range. Each of the short spectral filters is disposed on the substrate and aligned with a respective photodiode region. The image sensor also includes a plurality of single-layer blocking filters for blocking the first electromagnetic wavelength range. Each single-layer blocking filter is disposed on a respective short spectral filter. Each single-layer blocking filter and its respective short spectral filter have a combined height substantially equal to the first height.

    Abstract translation: 具有信号分离CFA的双模式图像传感器包括包括多个光电二极管区域的基板和具有均匀的第一高度的多个高光谱滤光器,并且用于传输第一电磁波长范围。 每个高光谱滤光器设置在衬底上并与相应的光电二极管区域对准。 图像传感器还包括用于在第二电磁波长范围内传输一个或多个光谱带的多个短光谱滤波器。 每个短光谱滤光器设置在衬底上并与相应的光电二极管区域对准。 图像传感器还包括用于阻挡第一电磁波长范围的多个单层阻挡滤波器。 每个单层阻塞滤波器设置在相应的短光谱滤波器上。 每个单层阻挡滤波器及其相应的短光谱滤波器具有基本上等于第一高度的组合高度。

    COLOR FILTER ARRAY WITH REFERENCE PIXEL TO REDUCE SPECTRAL CROSSTALK
    35.
    发明申请
    COLOR FILTER ARRAY WITH REFERENCE PIXEL TO REDUCE SPECTRAL CROSSTALK 审中-公开
    带有参考像素的彩色滤镜阵列,以减少光谱仪

    公开(公告)号:US20170006266A1

    公开(公告)日:2017-01-05

    申请号:US15266875

    申请日:2016-09-15

    Abstract: A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the same percentage of wavelengths that remain unfiltered by filters of a different photoresponse than the incident wavelength. Other embodiments are disclosed and claimed.

    Abstract translation: 滤色器阵列包括多个平铺的最小重复单元,每个最小重复单元包括M×N个单独滤波器组。 每个最小重复单元包括多个成像过滤器,包括具有至少第一,第二和第三光响应的单个过滤器和至少一个具有参考光响应的参考过滤器,其中参考过滤器位于成像过滤器之间,其中参考光响应 透过与入射波长不同的光响应的滤光片基本保持未过滤的波长百分比。 公开和要求保护其他实施例。

    Method of forming dual size microlenses for image sensors
    36.
    发明授权
    Method of forming dual size microlenses for image sensors 有权
    形成图像传感器双尺寸微透镜的方法

    公开(公告)号:US09372286B2

    公开(公告)日:2016-06-21

    申请号:US13860859

    申请日:2013-04-11

    Abstract: A method of forming microlenses for an image sensor having at least one large-area pixel and at least one small-area pixel is disclosed. The method includes forming a uniform layer of microlens material on a light incident side of the image sensor over the large-area pixel and over the small-area pixel. The method also includes forming the layer of microlens material into a first block disposed over the large-area pixel and into a second block disposed over the small-area pixel. A void is also formed in the second block to reduce a volume of microlens material included in the second block. The first and second blocks are then reflowed to form a respective first microlens and second microlens. The first microlens has substantially the same effective focal length as the second microlens.

    Abstract translation: 公开了一种形成具有至少一个大面积像素和至少一个小面积像素的图像传感器的微透镜的方法。 该方法包括在大面积像素上和小区域像素上的图像传感器的光入射侧上形成均匀的微透镜材料层。 该方法还包括将微透镜材料层形成为设置在大面积像素上的第一块和设置在小面积像素上的第二块。 在第二块中还形成空隙,以减少包含在第二块中的微透镜材料的体积。 然后将第一和第二块回流以形成相应的第一微透镜和第二微透镜。 第一微透镜具有与第二微透镜基本上相同的有效焦距。

    Image sensor having a gapless microlenses
    37.
    发明授权
    Image sensor having a gapless microlenses 有权
    具有无间隙微透镜的图像传感器

    公开(公告)号:US09331115B2

    公开(公告)日:2016-05-03

    申请号:US14222833

    申请日:2014-03-24

    CPC classification number: H01L27/14627 G02B13/0015 H01L27/14643

    Abstract: An image sensor includes a plurality of photosensitive devices arranged in a semiconductor substrate. A planar layer is disposed over the plurality of photosensitive devices in the semiconductor substrate. A plurality of first microlenses comprised of a lens material is arranged in first lens regions on the planar layer. A plurality of lens barriers comprised of the lens material is arranged on the planar layer to provide boundaries that define second lens regions on the planar layer. A plurality of second microlenses comprised of the lens material is formed within the boundaries provided by the plurality of lens barriers that define the second lens regions on the planar layer. The plurality of lens barriers are integrated with respective second microlenses after a reflow process of the plurality of second microlenses.

    Abstract translation: 图像传感器包括布置在半导体衬底中的多个感光器件。 平面层设置在半导体衬底中的多个光敏器件上。 由透镜材料构成的多个第一微透镜布置在平面层上的第一透镜区域中。 由透镜材料构成的多个透镜屏障布置在平面层上以提供在平面层上限定第二透镜区域的边界。 由透镜材料构成的多个第二微透镜形成在由平面层上限定第二透镜区域的多个透镜屏障提供的边界内。 在多个第二微透镜的回流处理之后,多个透镜屏障与相应的第二微透镜集成。

    COLOR FILTER ARRAY WITH REFERENCE PIXEL TO REDUCE SPECTRAL CROSSTALK
    38.
    发明申请
    COLOR FILTER ARRAY WITH REFERENCE PIXEL TO REDUCE SPECTRAL CROSSTALK 有权
    带有参考像素的彩色滤镜阵列,以减少光谱仪

    公开(公告)号:US20160088265A1

    公开(公告)日:2016-03-24

    申请号:US14491039

    申请日:2014-09-19

    Abstract: A color filter array includes a plurality of tiled minimal repeating units, each minimal repeating unit comprising an M×N set of individual filters. Each minimal repeating unit includes a plurality of imaging filters including individual filters having at least first, second, and third photoresponses, and at least one reference filter having a reference photoresponse, wherein the reference filter is positioned among the imaging filters and wherein the reference photoresponse transmits substantially the crosstalk spectrum that is not filtered from light incident on the color filter array by the plurality of imaging filters. Other embodiments are disclosed and claimed.

    Abstract translation: 滤色器阵列包括多个平铺的最小重复单元,每个最小重复单元包括M×N个单独滤波器组。 每个最小重复单元包括多个成像过滤器,包括具有至少第一,第二和第三光响应的单个过滤器和至少一个具有参考光响应的参考过滤器,其中参考过滤器位于成像过滤器之间,其中参考光响应 通过多个成像滤波器基本上发射未滤波的滤波器的入射到滤色器阵列上的串扰谱。 公开和要求保护其他实施例。

    Information Technology Device Input Systems And Associated Methods
    39.
    发明申请
    Information Technology Device Input Systems And Associated Methods 审中-公开
    信息技术设备输入系统及相关方法

    公开(公告)号:US20140267033A1

    公开(公告)日:2014-09-18

    申请号:US13830849

    申请日:2013-03-14

    Inventor: Jin Li Jizhang Shan

    CPC classification number: G06F3/0346 G06F3/0304

    Abstract: A method for generating a control signal to control an information technology device includes the following steps: (1) capturing, using an image sensor, a current control image of a light source of a remote controller positioned within a field of view of the image sensor; (2) identifying, within the current control image, a current location of light emitted from the light source; (3) determining movement between (a) the current location of the light emitted from the light source and (b) a previous location of the light emitted from the light source determined from a previously captured image; (4) generating a movement control signal based upon the movement; and (5) sending the movement control signal to the information technology device. The method is executed, for example, by a movement control module of an information technology device input system.

    Abstract translation: 一种用于产生控制信号以控制信息技术设备的方法包括以下步骤:(1)使用图像传感器捕获位于图像传感器的视场内的遥控器的光源的当前控制图像 ; (2)在当前控制图像内识别从光源发射的光的当前位置; (3)确定(a)从光源发射的光的当前位置与(b)从先前捕获的图像确定的从光源发射的光的先前位置之间的运动; (4)基于该移动生成运动控制信号; 和(5)将移动控制信号发送到信息技术装置。 该方法例如由信息技术设备输入系统的移动控制模块执行。

    HIGH DYNAMIC RANGE PIXEL HAVING A PLURALITY OF PHOTODIODES WITH A SINGLE IMPLANT
    40.
    发明申请
    HIGH DYNAMIC RANGE PIXEL HAVING A PLURALITY OF PHOTODIODES WITH A SINGLE IMPLANT 审中-公开
    具有单一植入物的多种光电子的高动态范围像素

    公开(公告)号:US20140246561A1

    公开(公告)日:2014-09-04

    申请号:US13784351

    申请日:2013-03-04

    Abstract: A high dynamic range image sensor pixel includes a short integration photodiode and a long integration photodiode disposed in semiconductor material. The long integration photodiode has a light exposure area that is substantially larger than a light exposure area of the short integration photodiode. The light exposure area of the short integration photodiode has a first doping concentration from a first doping implantation. The light exposure area of the long integration photodiode includes at least one implanted portion having the first doping concentration from the first doping implantation. The light exposure area of the long integration photodiode further includes at least one non-implanted portion photomasked from the first doping implantation such that a combined doping concentration of the implanted and non-implanted portions of the light exposure area of the long integration photodiode is less than the first doping concentration of the light exposure area of the short integration photodiode.

    Abstract translation: 高动态范围图像传感器像素包括短集成光电二极管和设置在半导体材料中的长积分光电二极管。 长积分光电二极管的曝光面积远大于短积分光电二极管的曝光面积。 短积分光电二极管的曝光区域具有来自第一掺杂注入的第一掺杂浓度。 长积分光电二极管的曝光区域包括具有来自第一掺杂注入的第一掺杂浓度的至少一个注入部分。 长积分光电二极管的曝光区域还包括从第一掺杂注入光掩模的至少一个非注入部分,使得长积分光电二极管的曝光区域的注入和未注入部分的组合掺杂浓度较小 比第一掺杂浓度的曝光区域短的集成光电二极管。

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