Abstract:
A system for performing digital correlated double sampling in an image sensor includes a memory for storing most significant bits of the digital image data and reset data produced by an analog-to-digital convertor. The system further includes least significant bit latches for each of the digital image data and reset data. The most significant bits are recombined with the least significant bits in respective recombined latches for each of the digital image data and reset data. A correlated double sampling stage then performs correlated double sampling and stores the correlated double sampled data in memory.
Abstract:
A system for performing digital correlated double sampling in an image sensor includes a memory for storing most significant bits of the digital image data and reset data produced by an analog-to-digital convertor. The system further includes least significant bit latches for each of the digital image data and reset data. The most significant bits are recombined with the least significant bits in respective recombined latches for each of the digital image data and reset data. A correlated double sampling stage then performs correlated double sampling and stores the correlated double sampled data in memory.
Abstract:
A method of focusing an image sensor includes scanning a first portion of an image frame from an image sensor a first time at a first rate to produce first focus data. A second portion of the image frame from the image sensor is scanned at a second rate to read image data from the second portion. The first rate is greater than the second rate. The first portion of the image frame is scanned a second time at the first rate to produce second focus data. The first focus data and the second focus data are compared, and the focus of a lens is adjusted in response to the comparison of the first focus data and the second focus data.
Abstract:
An image sensor read out circuit includes a first current mirror circuit in which a second current conducted through a second current path is controlled in response to a first current conducted through the first current path. The second current is conducted through an amplifier transistor of a pixel circuit. A first current source is coupled to the first current path to provide a substantially constant current component of the first current. A second current source is coupled to a power supply rail of the pixel circuit and coupled to the first current path to provide a ripple current component of the first current. The ripple current component provided by the second current source is responsive to a ripple in the power supply rail. The first current is responsive to a sum of the currents from the first and second current sources.
Abstract:
An integrated circuit system includes a first device wafer bonded to a second device wafer at a bonding interface of dielectrics. Each wafer includes a plurality of dies, where each die includes a device, a metal stack, and a seal ring that is formed at an edge region of the die. Seal rings included in dies of the second device wafer each include a first conductive path provided with metal formed in a first opening that extends from a backside of the second device wafer, through the second device wafer, and through the bonding interface to the seal ring of a corresponding die in the first device wafer.
Abstract:
A CMOS pixel array is introduced into a dark environment to acquire video image frames. During a first frame, each row of pixels is sequentially reset, one row at a time, and then each row of pixels is sequentially read out, one row at a time. During a second frame, each row of pixels is sequentially reset, one row at a time, and then each row of pixels sequentially read out, one row at a time. A light source illuminates the dark environment during a vertical blanking period between the reading of the last row during the first frame and the reading of the first row during the second frame. The light source does not illuminate the dark environment between reading the first and last rows during the first frame nor between reading the first and last rows during the second frame.
Abstract:
An example imaging sensor system includes a backside-illuminated CMOS imaging array formed in a first semiconductor layer of a first wafer. The CMOS imaging array includes an N number of pixels, where each pixel includes a photodiode region. The first wafer is bonded to a second wafer at a bonding interface between a first metal stack of the first wafer and a second metal stack of the second wafer. A storage device is disposed in a second semiconductor layer of the second wafer. The storage device includes at least N number of storage cells, where each of the N number of storage cells are configured to store a signal representative of image charge accumulated by a respective photodiode region. Each storage cell includes a circuit element that is sensitive to light-induced leakage.
Abstract:
A pixel circuit includes a photodiode configured to photo generate image charge in response to incident light, a floating diffusion coupled to receive the image charge from the photodiode, a transfer transistor coupled between the photodiode and the floating diffusion to transfer the image charge from the photodiode to the floating diffusion, a reset transistor coupled between a variable voltage source and the floating diffusion, wherein the reset transistor is configured to be switched in response to a reset control signal, and a lateral overflow integration capacitor (LOFIC) coupled between the variable voltage source and the floating diffusion. The variable voltage source is configured to output a high-voltage level during a high conversion gain (HCG) reset signal readout and an HCG image signal readout, and a mid-voltage level during a LOFIC image signal readout and a LOFIC reset signal readout.
Abstract:
A method of counting photons using a plurality of single photon avalanche diodes (SPADs), including initiating a detection phase, enabling each single photon avalanche diode (SPAD) of the plurality of SPADs for a period of time within the detection phase, accumulating a SPAD event from each SPAD of the plurality of SPADs, wherein each SPAD event corresponds to a detection of a single photon, determining a counter code at an end of the detection phase, where the counter code corresponds to accumulated SPAD events, and enabling one or more SPADs of the plurality of SPADs within an exposure phase based on the counter code, where the counter code is greater than an expected number of the SPAD events during the exposure phase, and where the expected number of SPAD events during the exposure phase is based on the counter code that is determined at the end of the detection phase.
Abstract:
A switch driver circuit includes a plurality of pullup transistors. The plurality of pullup transistors includes a first pullup transistor coupled between a voltage supply and a first output node. A plurality of pulldown transistors includes a first pulldown transistor coupled between the first output node and a ground node. A slope control circuit is coupled to the ground node. A plurality of global connection switches includes a first global connection switch coupled between the first output node and the slope control circuit.