公开(公告)号：US06762000B2

公开(公告)日：2004-07-13

申请号：US09951816

申请日：2001-09-12

申请人： Osamu Nozawa ,  Masaru Mitsui ,  Hitoshi Ootsuka ,  Hideaki Mitsui

发明人： Osamu Nozawa ,  Masaru Mitsui ,  Hitoshi Ootsuka ,  Hideaki Mitsui

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  C23C14/34 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/564 ,  G03F1/26 ,  G03F1/50 ,  G03F1/68 ,  H01J37/3405

摘要： There is provided a manufacturing apparatus and method able to manufacture a phase shift mask blank in which a total number of particles and pinholes having a diameter larger than about a half of an exposure wavelength in a light semi-transmission film is 0.1 or less per square centimeter. In a DC magnetron sputtering apparatus for manufacturing a halftone phase shift mask blank, for example, a target plane is disposed downwards with respect to a gravity direction, a whole-surface erosion cathode is used, a corner portion 5a of an end of a target and a corner portion of an earth shield are chamfered (R processed), a target end 5b, an exposed backing plate surface 4b and the surface of an earth shield 12 are roughened, and the earth shield 12 is disposed above a target plane d (on a backing plate side).

摘要翻译： 提供一种能够制造相移掩模坯料的制造装置和方法，其中在半透射膜中直径大于曝光波长的大约一半的颗粒和针孔的总数为每平方厘米0.1以下 厘米。 在用于制造半色调相移掩模坯料的DC磁控溅射装置中，例如，目标平面相对于重力方向向下设置，使用全表面侵蚀阴极，靶的端部的角部5a 并且接地屏蔽的角部被倒角（R处理），目标端5b，暴露的背板表面4b和接地屏蔽体12的表面被粗糙化，并且接地屏蔽12设置在目标平面d 在背板侧）。

公开(公告)号：US06723477B2

公开(公告)日：2004-04-20

申请号：US09949717

申请日：2001-09-12

申请人： Osamu Nozawa ,  Masaru Mitsui ,  Hideaki Mitsui

发明人： Osamu Nozawa ,  Masaru Mitsui ,  Hideaki Mitsui

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  B32B17/06 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2218/155

摘要： To provide a method for manufacturing a phase shift mask blank hating a light translucent film or a light translucent portion having the designated phase angle and transmittance and being superior in film characteristics of chemical resistance, light resistance, and internal stress. The invention is characterized by having a translucent film on a transparent substrate, wherein thermal treatment of the translucent film is implemented at more than 150° C. after forming the translucent film comprising nitrogen, metal, and silicon as a main component on said transparent substrate.

摘要翻译： 提供一种制造具有指定的相位角和透射率的光半透明膜或光透射部分并且具有优异的耐化学性，耐光性和内应力的膜特性的相移掩模板的方法。本发明的特征在于 在透明基板上具有半透明膜，其中在形成包括氮，金属和硅作​​为主要成分的透明膜的透明膜之后，在超过150℃下实施半透膜的热处理。

公开(公告)号：US08524421B2

公开(公告)日：2013-09-03

申请号：US13076254

申请日：2011-03-30

申请人： Osamu Nozawa ,  Hiroaki Shishido ,  Toshiyuki Suzuki

发明人： Osamu Nozawa ,  Hiroaki Shishido ,  Toshiyuki Suzuki

IPC分类号： G03F1/50

CPC分类号： G03F1/80 ,  G03F1/50 ,  G03F1/54 ,  G03F1/58

摘要： In a mask blank for manufacturing a transfer mask, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film. The highly oxidized layer is placed on a side opposite to a transparent substrate side.

摘要翻译： 在用于制造转印掩模的掩模坯料中，掩模坯料在透明基板上具有遮光膜。 遮光膜由含有钽作为主要金属成分的材料制成，并且包含氧含量为60原子％以上且形成为遮光膜的表面层的高度氧化层。 高氧化层位于与透明基板侧相反的一侧。

公开(公告)号：US08501372B2

公开(公告)日：2013-08-06

申请号：US13248896

申请日：2011-09-29

申请人： Atsushi Kominato ,  Masahiro Hashimoto ,  Osamu Nozawa

发明人： Atsushi Kominato ,  Masahiro Hashimoto ,  Osamu Nozawa

IPC分类号： G03F1/26

CPC分类号： G03F1/50 ,  G03F1/00 ,  G03F1/26 ,  G03F1/58 ,  G03F7/20 ,  G03F7/2041 ,  H01L21/266 ,  H01L21/268 ,  H01L21/31138

摘要： A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.

摘要翻译： 用于制造适于施加ArF准分子激光曝光光的二进制掩模的掩模坯料在透明基板上具有用于形成转印图案的遮光膜。 遮光膜具有下层和上层的层叠结构，并且对于曝光光的光密度为2.8以上，厚度为45nm以下。 下层由过渡金属和硅的总含量为90原子％以上的材料制成，厚度为30nm以上。 上层的厚度为3nm以上且6nm以下。 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光的相位差为30度以下。

公开(公告)号：US08486588B2

公开(公告)日：2013-07-16

申请号：US13340228

申请日：2011-12-29

申请人： Yuki Shiota ,  Osamu Nozawa

发明人： Yuki Shiota ,  Osamu Nozawa

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F1/26 ,  G03F1/32 ,  G03F1/34 ,  G03F1/54

摘要： A photomask blank includes a transparent substrate and a film containing at least two layers having at least a first layer and a second layer formed on the transparent substrate. The first layer is made of a material containing one or more materials selected from the group Ta, Hf, Si, Cr, Ag, Au, Cu, Al, and Mo. The second layer is made of MoSiN, MoSiO, MoSiON, SiN, SiO, or SiON. A phase difference of the film containing at least two layers is from −30° to +30°.

摘要翻译： 光掩模坯料包括透明基板和含有至少两层至少具有形成在透明基板上的第一层和第二层的膜。 第一层由含有选自Ta，Hf，Si，Cr，Ag，Au，Cu，Al和Mo中的一种或多种材料的材料制成。第二层由MoSiN，MoSiO，MoSiON，SiN， SiO或SiON。 含有至少两层的膜的相位差为-30°〜+ 30°。

公开(公告)号：US08435704B2

公开(公告)日：2013-05-07

申请号：US12875783

申请日：2010-09-03

申请人： Osamu Nozawa ,  Hiroaki Shishido

发明人： Osamu Nozawa ,  Hiroaki Shishido

IPC分类号： G03F1/22

CPC分类号： G03F1/54 ,  G03F1/50

摘要： In a mask blank for manufacturing a transfer mask adapted to exposure light having a wavelength of 200 nm or less, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film, that is placed on a side opposite to a transparent substrate side.

摘要翻译： 在用于制造适于曝光波长为200nm以下的光的转印掩模的掩模坯料中，掩模坯料在透明基板上具有遮光膜。 遮光膜由含有钽作为主要金属成分的材料制成，并且包含氧含量为60原子％以上且形成为遮光膜的表面层的高度氧化层， 放置在与透明基板侧相对的一侧。

公开(公告)号：US20120189946A1

公开(公告)日：2012-07-26

申请号：US13384168

申请日：2010-07-14

申请人： Masahiro Hashimoto ,  Atsushi Kominato ,  Hiroyuki Iwashita ,  Osamu Nozawa

发明人： Masahiro Hashimoto ,  Atsushi Kominato ,  Hiroyuki Iwashita ,  Osamu Nozawa

IPC分类号： G03F1/00 ,  G03F1/50 ,  B82Y30/00

CPC分类号： G03F1/74 ,  G03F1/50 ,  G03F1/54 ,  G03F1/80

摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.

摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2主要由含有过渡金属的材料构成， 硅和选自氧和氮的至少一种或多种元素。 在不被带电粒子照射的状态下，通过含氟物质的遮光膜的蚀刻速度低至少能够确保相对于由氟系物形成的遮光膜的蚀刻速度的蚀刻选择性， 在被照射带电粒子的状态下含有物质。

公开(公告)号：US20120177536A1

公开(公告)日：2012-07-12

申请号：US13496582

申请日：2010-09-17

申请人： Chiki Sakai ,  Osamu Nozawa ,  Hiroshi Mitsumaki

发明人： Chiki Sakai ,  Osamu Nozawa ,  Hiroshi Mitsumaki

IPC分类号： G01N31/00

CPC分类号： G01N27/4175 ,  G01N35/00693

摘要： Ion concentration measurement requires a calibration before the start of the measurement, and thus the start of the measurement is delayed for the calibration period. Hence, the calibration is made unnecessary by reading an electrode slope value specific to an ion selective electrode for measuring the concentration of particular ions dissolved in a test solution, from an information presenting unit of an ion selective electrode cartridge including the ion selective electrode.

摘要翻译： 离子浓度测量需要在测量开始之前进行校准，因此测量开始在校准周期内延迟。 因此，通过从包括离子选择电极的离子选择性电极盒的信息呈现单元读取用于测量溶解在测试溶液中的特定离子的浓度的离子选择电极特有的电极斜率值，不需要校准。

公开(公告)号：US08137867B2

公开(公告)日：2012-03-20

申请号：US12394503

申请日：2009-02-27

申请人： Osamu Nozawa

发明人： Osamu Nozawa

IPC分类号： G03F1/00 ,  G03F1/08 ,  G03F1/14 ,  C23C14/08 ,  C23C14/18 ,  C23C14/34

CPC分类号： G03F1/58 ,  G03F1/46

摘要： A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and further containing xenon and a front-surface antireflection layer formed on the light-shielding layer and made of a material mainly containing tantalum oxide and further containing argon.

公开(公告)号：US07989122B2

公开(公告)日：2011-08-02

申请号：US12414198

申请日：2009-03-30

申请人： Osamu Nozawa

发明人： Osamu Nozawa

IPC分类号： G03F1/00 ,  G03F7/00

CPC分类号： G03F1/34 ,  G03F1/80

摘要： A photomask blank is for manufacturing a phase shift mask having a light-transmitting substrate provided with a phase shift portion adapted to give a predetermined phase difference to transmitted exposure light. The phase shift portion is a dug-down part that is dug down from a surface of the light-transmitting substrate to a digging depth adapted to produce the predetermined phase difference with respect to exposure light transmitted through the light-transmitting substrate at a portion where the phase shift portion is not provided. The photomask blank includes, on the digging-side surface of the light-transmitting substrate, an etching mask film that is made of a material being dry-etchable with a chlorine-based gas, but not dry-etchable with a fluorine-based gas, and serves as an etching mask at least until, when forming the dug-down part by dry etching, the dry etching reaches the digging depth. The photomask blank further includes, on a surface of the etching mask film, a light-shielding film that is made of a material mainly containing tantalum and has a thickness so as to be removable during the dry etching for forming the dug-down part of the light-transmitting substrate.

摘要翻译： 光掩模坯件用于制造具有透光基板的相移掩模，该透光基板设置有适于给予透射曝光光的预定相位差的相移部分。 相移部分是从透光基板的表面向下挖掘的挖掘部分，其适于相对于透过透光基板的曝光来产生预定的相位差， 不设置相移部。 光掩模坯料包括在透光基板的挖掘侧表面上的蚀刻掩模膜，其由可用氯气气体干蚀刻的材料制成，但不能用氟基气体进行干法蚀刻 并且至少在通过干法蚀刻形成所述下陷部分时，至少形成蚀刻掩模，所述干蚀刻达到所述挖掘深度。 光掩模坯料还包括在蚀刻掩模膜的表面上的遮光膜，其由主要包含钽的材料制成，并且具有在干法蚀刻期间能够移除的厚度，以形成下垂部分的 透光基板。