公开(公告)号：US20190312152A1

公开(公告)日：2019-10-10

申请号：US15946628

申请日：2018-04-05

Applicant: QUALCOMM Incorporated

Inventor： Fabio Alessio MARINO ,  Sinan GOKTEPELI ,  Narasimhulu KANIKE ,  Qingqing LIANG ,  Paolo MENEGOLI ,  Francesco CAROBOLANTE ,  Aristotele HADJICHRISTOS

IPC: H01L29/93 ,  H01L27/12 ,  H01L29/36

Abstract: Certain aspects of the present disclosure provide semiconductor variable capacitors. One example semiconductor variable capacitor generally includes a semiconductor region, a first insulator region disposed below the semiconductor region, a first non-insulative region disposed below the first insulator region, a second non-insulative region disposed adjacent to the semiconductor region, and a third non-insulative region disposed adjacent to the semiconductor region, wherein the semiconductor region is disposed between the second non-insulative region and the third non-insulative region. In certain aspects, the semiconductor variable capacitor may include a second insulator region disposed above the semiconductor region and a second semiconductor region disposed above the second insulator region.

公开(公告)号：US20190198461A1

公开(公告)日：2019-06-27

申请号：US15947416

申请日：2018-04-06

Applicant: QUALCOMM Incorporated

Inventor： Stephen Alan FANELLI ,  Sinan GOKTEPELI ,  George Pete IMTHURN

IPC: H01L23/66 ,  H01L21/268 ,  B23K26/362 ,  H01L23/544 ,  H03H9/64 ,  H03H9/02

CPC classification number: H01L23/66 ,  B23K26/362 ,  H01L21/268 ,  H01L23/544 ,  H01L2223/6677 ,  H03H9/02566 ,  H03H9/02574 ,  H03H9/02622 ,  H03H9/64

Abstract: A method of constructing a layer transferred radio frequency (RF) filter-on-insulator wafer includes exposing a front-side of a bulk RF wafer to a laser light source to form a modified layer at a predetermined depth along a horizontal length of the bulk RF wafer. The method also includes bonding the front-side of the bulk RF wafer to a front-side of a semiconductor handle wafer through an insulator layer. The method further includes forming an RF filter layer from the bulk RF wafer. The method also includes selectively etching away the modified layer from the RF filter layer to the predetermined depth to complete the layer transferred RF filter-on-insulator wafer.

公开(公告)号：US20190181218A1

公开(公告)日：2019-06-13

申请号：US15836122

申请日：2017-12-08

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI ,  Stephen Alan FANELLI ,  Richard HAMMOND

IPC: H01L29/04 ,  H01L29/10 ,  H01L27/092 ,  H01L21/8238

Abstract: A semiconductor device includes a porous silicon layer on a silicon substrate. The semiconductor device also includes a seal layer on the porous silicon layer. The semiconductor device further includes a high charge carrier mobility material layer on the seal layer. The semiconductor device may further include a strain balancing intermediate layer between the seal layer and the high charge carrier mobility material layer. Different high charge carrier mobility materials can be used in the high charge carrier mobility material layer to form different semiconductor devices.

公开(公告)号：US20190103339A1

公开(公告)日：2019-04-04

申请号：US15975434

申请日：2018-05-09

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI ,  George Pete IMTHURN ,  Stephen Alan FANELLI

IPC: H01L23/48 ,  H01L25/11 ,  H01L25/065 ,  H01L21/768 ,  H01L21/8234 ,  H01L49/02

Abstract: A radio frequency integrated circuit (RFIC) includes a bulk semiconductor die. The RFIC also includes a first active/passive device on a first-side of the bulk semiconductor die, and a first deep trench isolation region extending from the first-side to a second-side opposite the first-side of the bulk semiconductor die. The RFIC also includes a contact layer on the second-side of the bulk semiconductor die. The RFIC further includes a second-side dielectric layer on the contact layer. The first deep trench isolation region may extend through the contact layer and into the second-side dielectric layer.

公开(公告)号：US20180277502A1

公开(公告)日：2018-09-27

申请号：US15988916

申请日：2018-05-24

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI

IPC: H01L23/66 ,  H01L23/522 ,  H01L27/146 ,  H01L41/09 ,  H01L21/768

CPC classification number: H01L23/66 ,  H01L23/481 ,  H01L23/5225 ,  H01L27/1203 ,  H01L27/1464 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78648 ,  H01L41/09 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/13022 ,  H01L2924/1421

Abstract: An integrated radio frequency (RF) circuit structure may include an active device on a first surface of an isolation layer. The integrated RF circuit structure may also include a back-bias metallization on a second surface opposite the first surface of the isolation layer. A body of the active device is biased by the back-bias metallization. The integrated RF circuit structure may further include a handle substrate on a front-side dielectric layer on the active device.

公开(公告)号：US20180083000A1

公开(公告)日：2018-03-22

申请号：US15271120

申请日：2016-09-20

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L21/306 ,  H01L29/16 ,  H01L21/762 ,  H01L21/265 ,  H01L21/3065 ,  H01L29/20 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L21/3065 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/3081 ,  H01L21/76224 ,  H01L29/20 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/785

Abstract: A semiconductor having a first lattice constant is deposited on an exposed sidewall of a relatively small group IV semiconductor substrate fin having a second lattice constant that does not equal the first lattice constant to form a semiconductor fin without any crystal defects resulting from a lattice mismatch between the first lattice constant and the second lattice constant.

公开(公告)号：US20180076137A1

公开(公告)日：2018-03-15

申请号：US15807169

申请日：2017-11-08

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI ,  Plamen Vassilev KOLEV ,  Michael Andrew STUBER ,  Richard HAMMOND ,  Shiqun GU ,  Steve FANELLI

IPC: H01L23/528 ,  H04B1/16 ,  H01L49/02 ,  H01L23/532 ,  H01L23/522 ,  H01L29/06 ,  H01L27/12 ,  H01L23/66

CPC classification number: H01L23/5283 ,  H01L23/5223 ,  H01L23/53209 ,  H01L23/66 ,  H01L27/1203 ,  H01L28/40 ,  H01L29/0649 ,  H01L29/66181 ,  H01L29/94 ,  H01L2223/6677 ,  H04B1/16

Abstract: An integrated circuit structure may include a capacitor having a semiconductor layer as a first plate and a gate layer as a second plate. A capacitor dielectric layer may separate the first plate and the second plate. A backside metallization may be coupled to the first plate of the capacitor. A front-side metallization may be coupled to the second plate of the capacitor. The front-side metallization may be arranged distal from the backside metallization.

公开(公告)号：US20180068886A1

公开(公告)日：2018-03-08

申请号：US15256341

申请日：2016-09-02

Applicant: QUALCOMM Incorporated

Inventor： Richard HAMMOND ,  Sinan GOKTEPELI

IPC: H01L21/762 ,  H01L21/84 ,  H01L23/66 ,  H01L27/12 ,  H01Q1/22

CPC classification number: H01L21/76259 ,  H01L21/76256 ,  H01L21/7806 ,  H01L21/84 ,  H01L23/66 ,  H01L27/1203 ,  H01L2223/6677 ,  H01Q1/2283

Abstract: An integrated radio frequency (RF) circuit structure may include an active device on a front-side surface of a semiconductor device layer. A backside surface opposite the front-side surface of the semiconductor device layer may be supported by a backside dielectric layer. The integrated RF circuit structure may also include a handle substrate on a front-side dielectric layer that is on a front-side of the active device and a least a portion of the front-side surface of the semiconductor device layer. The integrated RF circuit structure may further include the backside dielectric layer on the backside surface of the semiconductor device layer. The backside dielectric layer may be arranged distal from the front-side dielectric layer.