公开(公告)号：US20070194450A1

公开(公告)日：2007-08-23

申请号：US11358183

申请日：2006-02-21

申请人： Christy Tyberg ,  Katherine Saenger ,  Jack Chu ,  Harold Hovel ,  Robert Wisnieff ,  Kerry Bernstein ,  Stephen Bedell

发明人： Christy Tyberg ,  Katherine Saenger ,  Jack Chu ,  Harold Hovel ,  Robert Wisnieff ,  Kerry Bernstein ,  Stephen Bedell

IPC分类号： H01L23/52

CPC分类号： H01L23/5226 ,  H01L23/53271 ,  H01L27/124 ,  H01L27/1248 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention provides structures and a fabrication process for incorporating thin film transistors in back end of the line (BEOL) interconnect structures. The structures and fabrication processes described are compatible with processing requirements for the BEOL interconnect structures. The structures and fabrication processes utilize existing processing steps and materials already incorporated in interconnect wiring levels in order to reduce added cost associated with incorporating thin film transistors in the these levels. The structures enable vertical (3D) integration of multiple levels with improved manufacturability and reliability as compared to prior art methods of 3D integration.

摘要翻译： 本发明提供了用于在线路后端（BEOL）互连结构中并入薄膜晶体管的结构和制造工艺。 所描述的结构和制造工艺与BEOL互连结构的处理要求相兼容。 结构和制造工艺利用已经并入到互连布线层中的现有处理步骤和材料，以便降低与在这些层级中引入薄膜晶体管相关联的附加成本。 与现有技术的3D集成方法相比，该结构能够实现多层次的垂直（3D）集成，具有改进的可制造性和可靠性。

公开(公告)号：US20070122989A1

公开(公告)日：2007-05-31

申请号：US11618770

申请日：2006-12-30

申请人： Jack Chu ,  Basanth Jaqannathan ,  Alfred Grill ,  Bernard Meyerson ,  John Ott

发明人： Jack Chu ,  Basanth Jaqannathan ,  Alfred Grill ,  Bernard Meyerson ,  John Ott

IPC分类号： H01L29/00 ,  H01L21/331

CPC分类号： C23C16/325 ,  C23C16/32 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02694 ,  Y10T428/12674

摘要： A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350° C. to 750° C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon

摘要翻译： 描述了一种用于在热壁，等温UHV-CVD系统中在多个基板上沉积单晶，硅碳和硅锗碳外延膜的方法和装置。 特别地，描述了在350℃至750℃的范围内的多晶片低温生长技术，用于在Si和SiGe膜中外延引入碳，其具有非常突然且明确限定的结，但没有任何相关的氧背景污染。 优选地，这些外延SiC和SiGeC膜是原位掺杂的p型或n型，并且存在低浓度的碳<20 20 -3 -3， 生长的p型或n型掺杂物分布可以承受炉退火至850℃的温度和快速热退火温度至1000℃

公开(公告)号：US20060153896A1

公开(公告)日：2006-07-13

申请号：US11276710

申请日：2006-03-10

申请人： Jack Chu ,  Sonny Yamasaki ,  Jonathan Morris ,  James Machek

发明人： Jack Chu ,  Sonny Yamasaki ,  Jonathan Morris ,  James Machek

IPC分类号： A61K38/48 ,  A61F2/00 ,  A61K31/727 ,  A61K38/18 ,  A61K38/37 ,  A61K31/4743 ,  A61K31/366

CPC分类号： A61L27/3616 ,  A61L27/3641 ,  A61L27/3645 ,  A61L27/54 ,  A61L2300/414

摘要： Methods and devices for improving biofixation of implantable vascular devices are provided. The methods and devices improve biofixation of implantable vascular devices by providing one or more thrombus-eliminating agents at a treatment site before and/or during and/or after vascular device implantation.

摘要翻译： 提供了用于改善可植入血管装置的生物固定的方法和装置。 所述方法和装置通过在血管装置植入之前和/或之前在治疗部位提供一种或多种血栓消除剂来改善可植入血管装置的生物固定。

公开(公告)号：US20050156268A1

公开(公告)日：2005-07-21

申请号：US11053707

申请日：2005-02-08

申请人： Jack Chu

发明人： Jack Chu

IPC分类号： H01L21/20 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/092 ,  H01L29/10 ,  H01L29/778 ,  H01L29/06 ,  H01L31/072

CPC分类号： H01L29/7782 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/76254 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L29/1054

摘要： A strained crystalline layer having a tensilely strained SiGe portion and a compressively strained SiGe portion is disclosed. The strained crystalline layer is epitaxially bonded, or grown, on top of a SiGe relaxed buffer layer, in a way that the tensilely strained SiGe has a Ge concentration below that of the SiGe relaxed buffer, and the compressively strained SiGe has a Ge concentration above that of the SiGe relaxed buffer. The strained crystalline layer and the relaxed buffer can reside on top a semi-insulator substrate or on top of an insulating divider layer. In some embodiments the tensile SiGe layer is pure Si, and the compressive SiGe layer is pure Ge. The tensilely strained SiGe layer is suited for hosting electron conduction type devices and the compressively strained SiGe is suited for hosting hole conduction type devices. The strained crystalline layer is capable to seed an epitaxial insulator, or a compound semiconductor layer.

公开(公告)号：US20050156169A1

公开(公告)日：2005-07-21

申请号：US11067186

申请日：2005-02-26

申请人： Jack Chu

发明人： Jack Chu

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/336 ,  H01L27/12 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/778 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L21/00 ,  H01L21/8234 ,  H01L31/036

CPC分类号： H01L29/785 ,  H01L21/2807 ,  H01L21/28255 ,  H01L29/1029 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/41783 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66628 ,  H01L29/66795 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/7842 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/78684 ,  H01L29/78696

摘要： Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a layer which is doped with impurities in order to provide a preselected workfunction. It is further disclosed how this, and further improvements for FET devices, such as raised source/drain and multifaceted gate on insulator, MODFET on insulator are integrated with strained Si based layer on insulator technology.

公开(公告)号：US20050065593A1

公开(公告)日：2005-03-24

申请号：US10665936

申请日：2003-09-19

申请人： Jack Chu ,  Dave Erickson ,  Prema Ganesan ,  Jonathan Morris

发明人： Jack Chu ,  Dave Erickson ,  Prema Ganesan ,  Jonathan Morris

IPC分类号： A61B17/00 ,  A61F2/00 ,  A61F2/06 ,  A61L31/16

CPC分类号： A61L31/16 ,  A61B2017/00778 ,  A61F2/07 ,  A61F2/90 ,  A61F2002/065 ,  A61F2002/077 ,  A61F2250/0067 ,  A61L2300/00 ,  A61L2430/36

摘要： A method and device for the treatment of an aneurysm are provided. Different therapeutic agents are delivered to the aneurysmal site by a reservoir and delivery means in a localized, and, in some embodiments, time-released regimen, to treat, limit and reduce the severity of the aneurysm.

摘要翻译： 提供了一种治疗动脉瘤的方法和装置。 不同的治疗剂通过储存器和递送装置在局部的，在一些实施方案中被递送到治疗，限制和降低动脉瘤的严重性的方式递送到动脉瘤部位。

公开(公告)号：US20050054171A1

公开(公告)日：2005-03-10

申请号：US10953378

申请日：2004-09-29

申请人： Jack Chu ,  Douglas Coolbaugh ,  James Dunn ,  David Greenberg ,  David Harame ,  Basanth Jagannathan ,  Robb Johnson ,  Louis Lanzerotti ,  Kathryn Schonenberg ,  Ryan Wuthrich

发明人： Jack Chu ,  Douglas Coolbaugh ,  James Dunn ,  David Greenberg ,  David Harame ,  Basanth Jagannathan ,  Robb Johnson ,  Louis Lanzerotti ,  Kathryn Schonenberg ,  Ryan Wuthrich

IPC分类号： H01L21/331 ,  H01L29/737 ,  H01L21/8222

CPC分类号： H01L29/66242 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/7378

摘要： A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.

摘要翻译： 提供了在发射极和集电极区域之间基本上不存在位错缺陷的SiGe双极晶体管及其形成方法。 SiGe双极晶体管包括第一导电类型的集电极区域; 形成在所述集电区域的一部分上的SiGe基区; 以及形成在所述基极区域的一部分上的所述第一导电类型的发射极区域，其中所述集电极区域和所述基极区域在其中连续地包括碳。 SiGe基区进一步掺硼。

公开(公告)号：US09553580B2

公开(公告)日：2017-01-24

申请号：US13999599

申请日：2014-03-11

申请人： Jack Chu

发明人： Jack Chu

IPC分类号： H03K17/96 ,  A63H3/02 ,  A63H3/28 ,  H01H47/00

CPC分类号： H03K17/96 ,  A63H3/02 ,  A63H3/28 ,  A63H2200/00 ,  Y10T307/766 ,  Y10T307/826

摘要： A fabric product includes a body having a skin made by interweaving a plurality of textile fabrics and a low powered activation arrangement which includes an electronic unit and one or more conductive threads extended underneath the skin of the body. The electronic unit includes a power source, an activation circuit which is a low powered activation circuit, and an operator. Each of the conductive threads has a proximal end portion electrically coupled with the activation circuit and a distal end portion which is extended to an outer surface of the skin of the body at a predetermined location thereof and is arranged in such a manner that when the distal end portion of the conductive thread is being contacted, the activation circuit is activated to actuate the operator.

摘要翻译： 织物产品包括具有通过交织多个纺织织物制成的皮肤的主体和包括电子单元和延伸在身体的皮肤下方的一个或多个导电丝的低功率激活装置。 电子单元包括电源，作为低功率启动电路的启动电路和操作者。 每个导电线具有与激活电路电耦合的近端部分和远端部分，该远端部分在其预定位置处延伸到主体的皮肤的外表面，并且以这样的方式设置， 导电线的端部正在接触，启动电路被激活以致操作者。

公开(公告)号：US20140058356A1

公开(公告)日：2014-02-27

申请号：US14068500

申请日：2013-10-31

申请人： Jack Chu ,  Brian Raze

发明人： Jack Chu ,  Brian Raze

IPC分类号： A61M5/00

CPC分类号： A61M5/00 ,  A61L31/16

摘要： Treatment of aneurysmal blood vessels with local delivery of therapeutic agents thereby reduces or lessens the severity of an aneurysm, and, where used in conjunction with the placement of an excluding device, provides for more rapid recovery of the blood vessel from any disturbance occurring during placement of the excluding device. Therapeutic agents are placed in the aneurysmal site in a time-release carrier medium, such that the therapeutic agent is released into the aneurysmal site over a period of time without the need to provide systemic introduction of the therapeutic agent. The carrier may be introduced through the patient's dermis, such as with the use of a laparoscope, or intravascularly, through the use of a catheter. The carrier may be in a solid matrix, viscous liquid or liquid form.

摘要翻译： 用局部递送治疗剂治疗动脉瘤血管，从而降低或减轻动脉瘤的严重程度，并且在与排除装置的放置一起使用时，可以从放置期间发生的任何干扰提供更快速的血管恢复 的排除设备。 将治疗剂置于时间释放载体培养基的动脉瘤部位，使得治疗剂在一段时间内释放到动脉瘤部位，而不需要提供治疗剂的全身引入。 可以通过使用导管将载体例如通过使用腹腔镜或血管内引入患者真皮中。 载体可以是固体基质，粘稠液体或液体形式。

公开(公告)号：US07825346B2

公开(公告)日：2010-11-02

申请号：US11724960

申请日：2007-03-16

申请人： Jack Chu

发明人： Jack Chu

IPC分类号： H01H9/00

CPC分类号： H03K17/9645 ,  A61F13/42 ,  A63H3/36 ,  H01H2239/074

摘要： A low powered activation electronic device includes a power source, an electronic circuit, having two spaced apart electrodes, electrically connected to the power source to form an opened circuit, and two fabric contacts made of textile material provided at the two electrodes of the electronic circuit, wherein the electronic circuit is formed a closed circuit to activate the electronic device in responsive to a physical touch by a human operator at the two fabric contacts.

摘要翻译： 低功率激活电子设备包括电源，电子电路，具有两个间隔开的电极，电连接到电源以形成开路，以及由设置在电子电路的两个电极处的纺织材料制成的两个织物触点 ，其中所述电子电路形成闭合电路，以响应于所述两个织物触点处的操作者的物理触摸来激活所述电子设备。