公开(公告)号：US20220223224A1

公开(公告)日：2022-07-14

申请号：US17556363

申请日：2021-12-20

Applicant: Rambus Inc.

Inventor： Yohan U. Frans ,  Wayne F. Ellis ,  Akash Bansal

IPC: G11C29/50 ,  G06F13/16 ,  G01R23/02 ,  G11C7/22 ,  G11C29/02 ,  H03L1/02 ,  G11C8/18

Abstract: The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit.

公开(公告)号：US11211139B2

公开(公告)日：2021-12-28

申请号：US16824005

申请日：2020-03-19

Applicant: Rambus Inc.

Inventor： Yohan U. Frans ,  Wayne F. Ellis ,  Akash Bansal

IPC: G11C5/04 ,  G11C29/50 ,  G06F13/16 ,  G01R23/02 ,  G11C7/22 ,  G11C29/02 ,  H03L1/02 ,  G11C8/18 ,  G06F11/16 ,  G06F1/12 ,  G06F1/08 ,  G01R23/15 ,  G01R35/00 ,  G11C7/04

Abstract: The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit.

公开(公告)号：US20200312422A1

公开(公告)日：2020-10-01

申请号：US16824005

申请日：2020-03-19

Applicant: Rambus Inc.

Inventor： Yohan U. Frans ,  Wayne F. Ellis ,  Akash Bansal

IPC: G11C29/50 ,  G06F13/16 ,  G01R23/02 ,  G11C7/22 ,  G11C29/02 ,  H03L1/02 ,  G11C8/18

Abstract: The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit.

公开(公告)号：US20170103802A1

公开(公告)日：2017-04-13

申请号：US15332785

申请日：2016-10-24

Applicant: Rambus Inc.

Inventor： Wayne F. Ellis ,  Wayne S. Richardson ,  Akash Bansal ,  Frederick A. Ware ,  Lawrence Lai ,  Kishore Ven Kasamsetty

IPC: G11C11/406 ,  G11C11/4074

CPC classification number: G11C11/40615 ,  G06F1/3234 ,  G11C7/02 ,  G11C7/20 ,  G11C11/4072 ,  G11C11/4074 ,  G11C29/022 ,  G11C29/028

Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.

公开(公告)号：US09502096B2

公开(公告)日：2016-11-22

申请号：US14573323

申请日：2014-12-17

Applicant: Rambus Inc.

Inventor： Wayne F. Ellis ,  Wayne S. Richardson ,  Akash Bansal ,  Frederick A. Ware ,  Lawrence Lai ,  Kishore Ven Kasamsetty

IPC: G11C7/00 ,  G11C11/406 ,  G11C7/02 ,  G11C7/20 ,  G11C11/4072 ,  G11C29/02 ,  G06F1/32 ,  G11C11/4074

CPC classification number: G11C11/40615 ,  G06F1/3234 ,  G11C7/02 ,  G11C7/20 ,  G11C11/4072 ,  G11C11/4074 ,  G11C29/022 ,  G11C29/028

Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.

公开(公告)号：US09362006B2

公开(公告)日：2016-06-07

申请号：US14570773

申请日：2014-12-15

Applicant: RAMBUS INC.

Inventor： Yohan U. Frans ,  Wayne F. Ellis ,  Akash Bansal

IPC: G06F1/04 ,  G01R23/00 ,  G01R23/10 ,  G01D21/00 ,  G01R35/00 ,  G11C29/50 ,  G06F13/16 ,  G01R23/02 ,  G11C7/22 ,  G11C29/02 ,  H03L1/02 ,  G11C8/18 ,  G06F11/16 ,  G06F1/12 ,  G06F1/08 ,  G01R23/15 ,  G11C7/04

CPC classification number: G11C29/50012 ,  G01R23/02 ,  G01R23/15 ,  G01R35/005 ,  G06F1/08 ,  G06F1/12 ,  G06F11/1604 ,  G06F13/1689 ,  G11C7/04 ,  G11C7/22 ,  G11C7/222 ,  G11C7/225 ,  G11C8/18 ,  G11C29/023 ,  G11C29/028 ,  G11C2207/2254 ,  H03L1/02

Abstract: The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit. Additionally, the memory system contains a memory controller which can transmit a request to the memory device to trigger the memory device to measure the frequency of the oscillator circuit. The memory controller is also configured to receive the measured frequency from the memory device and uses the measured frequency to determine the timing drift in the memory device.

Abstract translation: 所公开的实施例涉及支持定时漂移校准的存储器系统的组件。 在具体实施例中，该存储器系统包含存储器件（或多个器件），其包括可产生频率的时钟分配电路和振荡器电路，其中频率变化表示时钟分配电路的定时漂移。 存储装置还包括被配置为测量振荡器电路的频率的测量电路。 此外，存储器系统包含存储器控制器，该存储器控制器可向存储器件发送请求以触发存储器件以测量振荡器电路的频率。 存储器控制器还被配置为从存储器件接收测量的频率，并使用测量的频率来确定存储器件中的定时漂移。

公开(公告)号：US20140351673A1

公开(公告)日：2014-11-27

申请号：US14285467

申请日：2014-05-22

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Suresh Rajan ,  Brent Haukness ,  Scott C. Best ,  Wayne F. Ellis

IPC: G06F11/10

CPC classification number: G06F11/1048 ,  G06F11/1092 ,  G06F2211/1092 ,  G11C11/40 ,  G11C29/42 ,  G11C29/44 ,  G11C29/4401 ,  G11C29/785 ,  G11C29/808 ,  G11C2029/0409 ,  G11C2029/0411

Abstract: A memory device is disclosed that includes a row of storage locations to store a data word, and a spare row element. The data word is encoded via an error code for generating error information for correcting X bit errors or detecting Y bit errors, where Y is greater than X. The spare row element has substitute storage locations. The logic is responsive to detected errors to (1) enable correction of a data word based on the error information where there are no more than X bit errors, and (2) substitute the spare row element for a portion of the row where there are at least Y bit errors in the data word.

Abstract translation: 公开了一种存储器件，其包括用于存储数据字的存储位置行和备用行元件。 数据字通过用于产生用于校正X位错误的错误信息的错误代码进行编码，或者检测Y位错误，其中Y大于X.备用行元件具有替代的存储位置。 逻辑响应于检测到的错误，以（1）能够基于错误信息来校正数据字，其中存在不超过X位错误，以及（2）将备用行元素替换为存在行的一部分 数据字中至少有Y位错误。