公开(公告)号：US20170187357A1

公开(公告)日：2017-06-29

申请号：US15378324

申请日：2016-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hikaru TAMURA

IPC: H03K3/037 ,  H03K3/356 ,  H01L27/088

CPC classification number: H01L27/088 ,  H01L21/8258 ,  H01L27/0688 ,  H03K3/012 ,  H03K3/0372 ,  H03K3/0375

Abstract: A circuit suitable for data backup of a logic circuit is provided. The circuit includes first to fourth nodes, a capacitor, first to third transistors, and first and second circuits. Data can be loaded and stored between the circuit and the logic circuit. The first node is electrically connected to a data output terminal of the logic circuit. The second node is electrically connected to a data input terminal of the logic circuit. The capacitor is electrically connected to the third node. The first transistor controls electrical continuity between the first node and the third node. The second transistor controls electrical continuity between the second node and the third node. The third transistor controls electrical continuity between the second node and the fourth node. The first and second circuits have functions of raising gate voltage of the first transistor and raising gate voltage of the second transistor, respectively.

公开(公告)号：US20150249800A1

公开(公告)日：2015-09-03

申请号：US14712270

申请日：2015-05-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takeshi AOKI ,  Hikaru TAMURA

IPC: H04N5/374 ,  H01L27/146

CPC classification number: H04N5/3741 ,  G01J1/44 ,  H01L27/14612 ,  H01L27/14643 ,  H01L31/02019

Abstract: This invention has for purpose to provide a photosensor that is small in size and can obtain high-contrast image data and to provide a semiconductor device including the photosensor. In the photosensor including a light-receiving element, a transistor serving as a switching element, and a charge retention node electrically connected to the light-receiving element through the transistor, the reduction in charge held in the charge retention node is suppressed by extending the fall time of the input waveform of a driving pulse supplied to the transistor to turn off the transistor.

Abstract translation: 本发明的目的是提供一种尺寸小且可以获得高对比度图像数据并提供包括光电传感器的半导体器件的光电传感器。 在包含光接收元件，用作开关元件的晶体管和通过晶体管电连接到光接收元件的电荷保持节点的光电传感器中，通过延长电荷保持节点的电荷的减少， 提供给晶体管的驱动脉冲的输入波形的下降时间关闭晶体管。

公开(公告)号：US20150222143A1

公开(公告)日：2015-08-06

申请号：US14684645

申请日：2015-04-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takeshi OSADA ,  Hikaru TAMURA

IPC: H02J7/02 ,  H04B5/00 ,  B60L11/18

CPC classification number: H02J50/12 ,  B60L1/00 ,  B60L11/1811 ,  B60L11/182 ,  G06K19/0701 ,  G06K19/0705 ,  G06K19/0723 ,  G06K19/0724 ,  G06K19/07767 ,  G06K19/07773 ,  G06K19/07779 ,  G06K19/07783 ,  H02J50/20 ,  H02J50/80 ,  H04B5/0037 ,  Y02D70/166 ,  Y02D70/26 ,  Y02T90/16

Abstract: An object is to provide a semiconductor device that is capable of wireless communication, such as an RFID tag, which can transmit and receive individual information without checking remaining capacity of a battery or changing batteries due to deterioration with time in the battery for a drive power supply voltage, and maintain a favorable a transmission/reception state even when electric power of an electromagnetic wave from a reader/writer is not sufficient. The semiconductor device includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, an antenna circuit group, a rectifier circuit-group and a battery connected to the signal processing circuit. The first antenna circuit transmits and receives a signal for transmitting data stored in the signal processing circuit and drives a power supply circuit, and each antenna circuit of the antenna circuit group receives a signal for charging the battery and includes an antenna which has a different corresponding frequency.

Abstract translation: 本发明的目的是提供能够进行无线通信的半导体装置，例如RFID标签，其能够在不检查电池的剩余容量的情况下发送和接收个别信息，或者由于电池中的驱动电力随时间的变化而改变电池 电源电压，并且即使来自读取器/写入器的电磁波的电力不足，也保持良好的发送/接收状态。 半导体器件包括信号处理电路，连接到信号处理电路的第一天线电路，天线电路组，整流器电路组和连接到信号处理电路的电池。 第一天线电路发送和接收用于发送存储在信号处理电路中的数据的信号并驱动电源电路，天线电路组的每个天线电路接收用于对电池充电的信号，并且包括具有不同对应的天线 频率。

公开(公告)号：US20140284324A1

公开(公告)日：2014-09-25

申请号：US14297887

申请日：2014-06-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hikaru TAMURA

IPC: H05B6/64 ,  H05B6/66

CPC classification number: H05B6/645 ,  H02J7/00 ,  H02J7/025 ,  H02J17/00 ,  H02J50/20 ,  H02J50/23 ,  H05B6/6402 ,  H05B6/66

Abstract: A temperature control device which can control the temperature of an object to be processed even after supply of radio waves or electromagnetic waves from a high-frequency heating apparatus is stopped. The temperature control device includes a temperature sensor detecting the temperature of the object to be processed heated by radio waves generated from the high-frequency heating apparatus, a signal processing circuit comparing the temperature detected by the temperature sensor with a standard temperature, a rechargeable battery charged by electric energy generated by reception of the radio waves by an antenna, a charging circuit controlling charging of the rechargeable battery, and a heater supplied with electric power from the rechargeable battery to heat the object to be processed so that the temperature thereof gets closer to the standard temperature, in accordance with a comparison result by the signal processing circuit.

Abstract translation: 即使在来自高频加热装置的无线电波或电磁波的供给之后，也能够控制能够控制待处理物体的温度的温度控制装置。 温度控制装置包括温度传感器，其通过从高频加热装置产生的无线电波检测加热对象物的温度，将由温度传感器检测的温度与标准温度进行比较的信号处理电路，可再充电电池 由通过天线接收无线电波产生的电能充电，控制充电电池的充电的充电电路和从可充电电池供电的加热器，以加热被处理物体使其温度变得更接近 按标准温度，按照信号处理电路的比较结果。

公开(公告)号：US20130299888A1

公开(公告)日：2013-11-14

申请号：US13942428

申请日：2013-07-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA ,  Munehiro KOZUMA ,  Masataka IKEDA ,  Takeshi AOKI

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L29/7869 ,  H01L31/1055 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378

Abstract: In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

公开(公告)号：US20250063836A1

公开(公告)日：2025-02-20

申请号：US18938763

申请日：2024-11-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takeshi AOKI ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA

IPC: H01L27/146 ,  G09G3/36 ,  H01L29/786

Abstract: An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

公开(公告)号：US20220406826A1

公开(公告)日：2022-12-22

申请号：US17893247

申请日：2022-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takeshi AOKI ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA

IPC: H01L27/146 ,  G09G3/36 ,  H01L29/786

Abstract: An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

公开(公告)号：US20210225910A1

公开(公告)日：2021-07-22

申请号：US17223248

申请日：2021-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takeshi AOKI ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA

IPC: H01L27/146 ,  G09G3/36 ,  H01L29/786

Abstract: An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

公开(公告)号：US20210225909A1

公开(公告)日：2021-07-22

申请号：US17223208

申请日：2021-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takeshi AOKI ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA

IPC: H01L27/146 ,  G09G3/36 ,  H01L29/786

Abstract: An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire.

公开(公告)号：US20210074734A1

公开(公告)日：2021-03-11

申请号：US17083393

申请日：2020-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Wataru UESUGI ,  Hikaru TAMURA ,  Atsuo ISOBE

IPC: H01L27/12 ,  H01L29/786 ,  H01L49/02 ,  H01L29/04 ,  H01L29/78 ,  H03K19/00 ,  H03K19/0185 ,  G11C7/04

Abstract: A retention circuit provided in a logic circuit enables power gating. The retention circuit includes a first terminal, a node, a capacitor, and first to third transistors. The first transistor controls electrical connection between the first terminal and an input terminal of the logic circuit. The second transistor controls electrical connection between an output terminal of the logic circuit and the node. The third transistor controls electrical connection between the node and the input terminal of the logic circuit. A gate of the first transistor is electrically connected to a gate of the second transistor. In a data retention period, the node becomes electrically floating. The voltage of the node is held by the capacitor.