公开(公告)号：US20150255679A1

公开(公告)日：2015-09-10

申请号：US14721224

申请日：2015-05-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Yeo Jin YOON ,  Ye Seul KIM ,  Tae Kyoon KIM

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/60 ,  H01L33/42 ,  H01L33/20 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L24/05 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/20 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/05558 ,  H01L2224/05644 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.

Abstract translation: 1.一种发光二极管（LED），包括包括第一半导体层，有源层和第二半导体层的半导体堆叠结构，设置在基板上的半导体堆叠，设置在半导体堆叠结构上的导电基板和电极 设置在导电衬底上并与导电衬底欧姆接触，其中电极包括穿透电极的沟槽和导电衬底的一部分。