公开(公告)号：US11746290B2

公开(公告)日：2023-09-05

申请号：US15830134

申请日：2017-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunki Kim ,  Shin Ae Jun ,  Eun Joo Jang ,  Yongwook Kim ,  Tae Gon Kim ,  Yuho Won ,  Taekhoon Kim ,  Hyo Sook Jang

IPC: C09K11/61 ,  C09K11/72 ,  C09K11/70 ,  C09K11/56 ,  C09K11/62 ,  C09K11/88 ,  H01L33/50 ,  H01L29/06 ,  H01L29/22 ,  C09K11/02 ,  B82Y40/00 ,  B82Y20/00 ,  B82Y30/00

CPC classification number: C09K11/883 ,  C09K11/025 ,  C09K11/565 ,  C09K11/61 ,  C09K11/612 ,  C09K11/70 ,  C09K11/705 ,  C09K11/72 ,  C09K11/722 ,  C09K11/88 ,  H01L29/0665 ,  H01L29/22 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L33/502 ,  Y10S977/774 ,  Y10S977/818 ,  Y10S977/824 ,  Y10S977/825 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

公开(公告)号：US11566176B2

公开(公告)日：2023-01-31

申请号：US16851495

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Hyo Sook Jang ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang ,  Yong Seok Han

IPC: C09K11/88 ,  H01L33/00 ,  H01L33/28 ,  H01L33/06

Abstract: A semiconductor nanocrystal particle including a core including a first semiconductor nanocrystal including zinc (Zn) and sulfur (S), selenium (Se), tellurium (Te), or a combination thereof; and a shell including a second semiconductor nanocrystal disposed on at least a portion of the core, wherein the core includes a dopant of a Group 1A element, a Group 2A element, or a combination thereof, and the semiconductor nanocrystal particle exhibits a maximum peak emission in a wavelength region of about 440 nanometers (nm) to about 470 nm.

公开(公告)号：US11512254B2

公开(公告)日：2022-11-29

申请号：US17036122

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang ,  Heejae Chung ,  Oul Cho

IPC: H01L21/08 ,  C09K11/88 ,  C09K11/08 ,  H01L51/50 ,  B82Y40/00 ,  B82Y20/00

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including a Group III-V compound, and a shell disposed on the core and including a semiconductor nanocrystal including a Group II-VI compound, wherein the quantum dots do not include cadmium, the shell includes a first layer disposed directly on the core and including a second semiconductor nanocrystal including zinc and selenium, a second layer, the second layer being an outermost layer of the shell and including a third semiconductor nanocrystal including zinc and sulfur, and a third layer disposed between the first layer and the second layer and including a fourth semiconductor nanocrystal including zinc, selenium, and optionally sulfur, and a difference between a peak emission wavelength of a colloidal solution of the quantum dot and a peak emission wavelength of a film prepared from the colloidal solution is less than or equal to about 5 nanometers (nm).

公开(公告)号：US11312901B2

公开(公告)日：2022-04-26

申请号：US17226154

申请日：2021-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook Jang ,  Yuho Won ,  Sungwoo Hwang ,  Ji Yeong Kim ,  Eun Joo Jang

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L51/50 ,  H01L27/32 ,  C09D133/00 ,  C08F220/06 ,  C09D133/02 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/1335

Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.

公开(公告)号：US11180694B2

公开(公告)日：2021-11-23

申请号：US16851625

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Hyun A Kang ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang

IPC: C09K11/02 ,  C09K11/88 ,  C01B19/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L51/50 ,  B82Y30/00

Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR  Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

公开(公告)号：US11011721B2

公开(公告)日：2021-05-18

申请号：US16863164

申请日：2020-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Eun Joo Jang ,  Dae Young Chung ,  Yong Wook Kim ,  Yuho Won ,  Oul Cho

IPC: C09K11/88 ,  H01L51/50 ,  H01L51/00 ,  H01L27/32 ,  C09K11/02 ,  H05B33/14

Abstract: An electroluminescence display device, including a first electrode and a second electrode facing each other; a quantum dot emission layer disposed between the first electrode and the second electrode, the quantum dot emission layer including a plurality of quantum dots and not including cadmium, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the device has color reproducibility according to a DCI standard of greater than or equal to about 89%.

公开(公告)号：US11011720B2

公开(公告)日：2021-05-18

申请号：US16298357

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Sung Woo Kim ,  Jin A Kim ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Oul Cho

IPC: H01L51/50 ,  H01L51/00 ,  C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  H01L51/52 ,  H01L51/56

Abstract: A quantum dot including a core including a first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including zinc, tellurium, selenium, and sulfur, a production method thereof, and an electronic device including the same. The quantum dot is free of cadmium, the quantum dot has a mole ratio of tellurium with respect to selenium of less than or equal to about 0.06:1, a photoluminescence peak wavelength of the quantum dot is greater than or equal to about 450 nm and less than or equal to about 470 nanometers (nm), and a full width at half maximum (FWHM) of a photoluminescence peak of the quantum dot is less than or equal to about 41 nm.

公开(公告)号：US10954441B2

公开(公告)日：2021-03-23

申请号：US16298276

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Jeong Hee Lee ,  Sung Woo Kim ,  Jin A Kim ,  Yuho Won ,  Eun Joo Jang

IPC: C09K11/88 ,  H01L51/50 ,  H05B33/14 ,  C09K11/02 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot includes a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on (e.g., directly on) the core and including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, wherein a size of the quantum dot is greater than or equal to about 10 nanometers (nm) and the quantum dot includes at least four protrusions. A production method thereof and an electronic device including the same are also disclosed.

公开(公告)号：US10647917B2

公开(公告)日：2020-05-12

申请号：US16170493

申请日：2018-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Hyun A Kang ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang

IPC: C09K11/02 ,  C09K11/88 ,  C01B19/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L51/50 ,  B82Y30/00

Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR  Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

公开(公告)号：US10179876B2

公开(公告)日：2019-01-15

申请号：US14613659

申请日：2015-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shin Ae Jun ,  Yuho Won ,  Hyo Sook Jang ,  Eun Joo Jang

IPC: C09K11/70 ,  C09K11/61 ,  C09K11/88 ,  C09K11/02 ,  B82Y20/00 ,  B82Y40/00

Abstract: A nanocrystal particle including: a semiconductor material; boron and optionally fluorine, wherein the particle has an organic ligand bound to a surface thereof, the boron is present as being doped in the particle or as a metal boride and the fluorine is present as being doped in the particle or as a metal fluoride.