公开(公告)号：US06807701B2

公开(公告)日：2004-10-26

申请号：US09992191

申请日：2001-11-06

申请人： Yasuhide Denda ,  Yoshio Nakamura ,  Yoshinobu Nishimoto ,  Makoto Nakajima ,  Tsuyoshi Hasegawa ,  Norihiko Moriya

发明人： Yasuhide Denda ,  Yoshio Nakamura ,  Yoshinobu Nishimoto ,  Makoto Nakajima ,  Tsuyoshi Hasegawa ,  Norihiko Moriya

IPC分类号： B08B1100

CPC分类号： B24B37/08 ,  B08B3/024 ,  B08B15/04 ,  B08B2203/0229 ,  B24B53/017 ,  Y10S134/902

摘要： The method of the present invention cleans abrasive faces of an upper abrasive plate and a lower abrasive plate of an abrasive machine. The method is executed by a cleaning device including: a nozzle for jetting water; a brush for preventing the jetted water from scattering in the air, the brush enclosing the nozzle; and another brush for closing a gap between the preventing brush and an outer edge of the upper abrasive plate, the method is characterized by the steps of: jetting water from the nozzle toward the abrasive face of the upper abrasive plate; moving the nozzle toward the outer edge of the upper abrasive plate; and closing the gap by the closing brush when the gap is formed between the preventing brush and the outer edge of the upper abrasive plate.

摘要翻译： 本发明的方法清洗研磨机的上磨料板和下研磨板的磨料面。 该方法由清洁装置执行，该清洁装置包括：用于喷射水的喷嘴; 用于防止喷射水在空气中飞散的刷子，刷子包围喷嘴; 以及用于封闭防磨刷和上磨料板的外边缘之间的间隙的另一刷子，其特征在于以下步骤：从喷嘴向上磨料板的研磨面喷射水; 将喷嘴移向上磨料板的外边缘; 并且当在防磨刷和上磨料板的外边缘之间形成间隙时，通过闭合刷闭合间隙。

公开(公告)号：US06326993B1

公开(公告)日：2001-12-04

申请号：US09526289

申请日：2000-03-15

申请人： Hiroki Satoh ,  Makoto Nakajima ,  Koji Tanimoto

发明人： Hiroki Satoh ,  Makoto Nakajima ,  Koji Tanimoto

IPC分类号： B41J247

CPC分类号： G06K15/00 ,  G06K2215/0002 ,  G06K2215/0011 ,  G06K2215/0082

摘要： When a CPU begins to monitor whether delay variation characteristics of a pulse width variation circuit have varied, it selects a basic delay setting value in a basic delay value setting block from a smallest one. The CPU sets a division number in a phase select block from a given minimum desired division number for pulse width modulation. The CPU senses the level of a phase comparison result signal (PHASE) from the pulse width modulation circuit. If the phase comparison result signal is stable at “1”, the CPU 1 fixes the division number. If the phase comparison result signal is “0” and the division number is not maximum, the CPU increases the division number and goes back to the setting of the division number. If the division number is maximum, the CPU increases the basic delay and goes back to the basic delay setting.

摘要翻译： 当CPU开始监视脉宽变化电路的延迟变化特性是否变化时，从最小的基本延迟值设定块中选择基本的延迟设定值。 CPU根据脉冲宽度调制的给定最小期望分频数设置相位选择块中的分频数。 CPU检测来自脉宽调制电路的相位比较结果信号（PHASE）的电平。 如果相位比较结果信号稳定在“1”，则CPU 1固定分割号。 如果相位比较结果信号为“0”且分频数不是最大值，则CPU增加分频数，并返回到分频数的设置。 如果分频数是最大值，则CPU会增加基本延时并返回到基本延时设置。

公开(公告)号：US5908347A

公开(公告)日：1999-06-01

申请号：US838636

申请日：1997-04-11

申请人： Makoto Nakajima ,  Yoshio Nakamura ,  Yasuhide Denda ,  Toshihisa Yanagisawa ,  Toshiaki Seki ,  Satoru Arakawa ,  Masahiro Takeuchi ,  Mitsue Ogawa ,  Masanori Fukushima

发明人： Makoto Nakajima ,  Yoshio Nakamura ,  Yasuhide Denda ,  Toshihisa Yanagisawa ,  Toshiaki Seki ,  Satoru Arakawa ,  Masahiro Takeuchi ,  Mitsue Ogawa ,  Masanori Fukushima

IPC分类号： B23Q41/04 ,  B24B37/00 ,  B24B37/04 ,  B24B49/00

CPC分类号： B24B37/345 ,  B23Q41/04

摘要： In the polishing system of the present invention, a adhering unit adheres a wafer on a carrying plate using liquid. A polishing unit polishes the wafer using a polishing plate. A feeding unit conveys the carrying plate from the adhering unit to the polishing unit. A dismounting unit removes the wafer from the carrying plate. A first discharging unit conveys the carrying plate from the polishing unit to the dismounting unit. A cleaning unit cleans the vacant carrying plate. A second discharging unit conveys the carrying plate from the dismounting unit to the cleaning unit. A third discharging unit conveys the carrying plate from the cleaning unit to the adhering unit. The units are formed into a loop lines so that the carrying plate is circulated in the loop line and the wafers are polished therein.

摘要翻译： 在本发明的抛光系统中，粘合单元使用液体将晶片粘附在承载板上。 抛光单元使用抛光板抛光晶片。 馈送单元将承载板从粘合单元传送到抛光单元。 拆卸单元从承载板上取下晶片。 第一排放单元将承载板从抛光单元传送到拆卸单元。 清洁单元清洁空载板。 第二排放单元将搬运单元从拆卸单元传送到清洁单元。 第三排放单元将承载板从清洁单元传送到粘附单元。 这些单元形成为环线，使得承载板在环线中循环并且晶片在其中被抛光。

公开(公告)号：US5879225A

公开(公告)日：1999-03-09

申请号：US834612

申请日：1997-04-14

申请人： Michio Kudo ,  Yasuo Inada ,  Makoto Nakajima ,  Masanori Fukushima

发明人： Michio Kudo ,  Yasuo Inada ,  Makoto Nakajima ,  Masanori Fukushima

IPC分类号： B24B37/10 ,  B24B37/12 ,  B24B47/10 ,  H01L21/304 ,  B24B7/22

CPC分类号： B24B37/105 ,  B24B47/10

摘要： A polishing machine of the present invention is capable of uniformly polishing a member to be polished with high flatness, and polishing cloth, which is employed in the polishing machine, is uniformly abraded. In the polishing machine, a polishing plate is capable of rotating. A supporting table rotatably supports the polishing plate. A rotary driving mechanism is mounted on the supporting table, and it rotates the polishing plate. A base supports the supporting table. An orbital driving mechanism moves the supporting table along a circular orbit without spinning about its own axis.

摘要翻译： 本发明的抛光机能够以高的平坦度均匀地研磨待抛光的部件，并且在抛光机中使用的抛光布被均匀地磨损。 在抛光机中，抛光板能够旋转。 支撑台可旋转地支撑抛光板。 旋转驱动机构安装在支撑台上，并使抛光板旋转。 基座支撑支撑台。 轨道驱动机构沿着圆形轨道移动支撑台，而不绕其自身的轴线旋转。

公开(公告)号：US09023588B2

公开(公告)日：2015-05-05

申请号：US13580066

申请日：2011-02-18

申请人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

发明人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

IPC分类号： G03F7/075 ,  G03F7/09 ,  G03F7/26 ,  C07F7/18 ,  C09D183/08 ,  C08G77/388

CPC分类号： C07F7/1804 ,  C08G77/388 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/094 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R1aR2bSi(R3)4−(a+b)  Formula (1) wherein R1 is Formula (2): in which R4 is an organic group, and R5 is a C1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X1 is Formula (3), Formula (4), or Formula (5): R2 is an organic group, and R3 is a hydrolysable group.

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。 用于光刻的抗蚀剂下层膜形成组合物包括硅烷化合物，可水解的有机硅烷，其水解产物或其水解缩合产物，其中可水解的有机硅烷是式（1）的可水解的有机硅烷：R1aR2bSi（R3） 4-（a + b）式（1）其中R1是式（2）：其中R4是有机基团，R5是C1-10亚烷基，羟基亚烷基，硫醚键，醚键， 酯键或其组合，X 1为式（3），式（4）或式（5）：R 2为有机基团，R 3为可水解基团。

公开(公告)号：US08864894B2

公开(公告)日：2014-10-21

申请号：US13058109

申请日：2009-08-13

申请人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

发明人： Wataru Shibayama ,  Makoto Nakajima ,  Yuta Kanno

IPC分类号： C09D183/08 ,  C09D5/00 ,  G03F7/075 ,  G03F7/004 ,  G03F7/095 ,  C08G77/26

CPC分类号： G03F7/0755 ,  C08G77/26 ,  C09D5/006 ,  C09D183/08 ,  G03F7/0045 ,  G03F7/0757 ,  G03F7/095 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R1aR2bSi(R3)4−(a+b). A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

摘要翻译： 提供了用于形成抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物，能够用作硬掩模或底部抗反射涂层，或者不与抗蚀剂混合并具有干蚀刻速率的抗蚀剂下层膜 高于抗蚀剂。 一种包含具有鎓基的硅烷化合物的成膜组合物，其中具有鎓基的硅烷化合物是其分子中具有鎓基，其水解产物或其水解缩合产物的可水解的有机硅烷。 该组合物用作光刻的抗蚀剂下层膜形成组合物。 包含具有鎓基的硅烷化合物和不具有鎓基的硅烷化合物的组合物，其中具有鎓基的硅烷化合物以小于1摩尔％的比例存在于全部硅烷化合物中，例如0.01至0.95 ％摩尔。 可水解的有机硅烷可以是式：R1aR2bSi（R3）4-（a + b）的化合物。 14.一种抗蚀剂下层膜，其通过将权利要求1〜14中任一项所述的组合物涂布在半导体基板上，并烘烤该组合物而得到。

公开(公告)号：US20140109771A1

公开(公告)日：2014-04-24

申请号：US13979885

申请日：2011-08-24

申请人： Yoshihiro Nakao ,  Yoshiaki Yokoo ,  Makoto Nakajima ,  Hiroaki Shimizu ,  Hiroki Furuta ,  Morio Mitsuhashi ,  Kitaro Oka ,  Chiseko Sakuma

发明人： Yoshihiro Nakao ,  Yoshiaki Yokoo ,  Makoto Nakajima ,  Hiroaki Shimizu ,  Hiroki Furuta ,  Morio Mitsuhashi ,  Kitaro Oka ,  Chiseko Sakuma

IPC分类号： A47J31/44

CPC分类号： A47J31/44 ,  A23F5/262 ,  A47J31/407 ,  B65D85/8043

摘要： A roasted plant extraction apparatus is provided which is capable of selectively reducing excessive bitterness in an extract liquid obtained by water extraction from a roasted plant raw material while preserving desirable flavor ingredients and body. A beverage extraction apparatus includes a granule containing part containing granules for extraction of a beverage, first pouring device for pouring an extraction solvent into the granule containing part from a first direction, and collecting device for collecting a coffee extract liquid extracted by device of the extraction solvent at the side of layers of the coffee granules corresponding to the first direction. The granule containing part is provided with a detachable restraining member for placing the granules for extraction of a beverage in a substantially sealed state.

摘要翻译： 本发明提供了一种焙烤植物提取装置，其能够选择性地减少通过从焙烤植物原料中提取水而获得的提取液中的过度的苦味，同时保留理想的风味成分和身体。 一种饮料提取装置，包括：含有颗粒的含有颗粒的颗粒，用于提取饮料;第一倾倒装置，用于从第一方向将提取溶剂注入到所述颗粒容纳部分;以及收集装置，用于收集通过提取装置提取的咖啡提取液 咖啡颗粒层对应于第一方向的溶剂。 颗粒容纳部分设置有用于将基本上密封状态的饮料提取的颗粒放置的可拆卸的限制构件。

公开(公告)号：US20130224957A1

公开(公告)日：2013-08-29

申请号：US13880787

申请日：2011-10-20

申请人： Yuta Kanno ,  Makoto Nakajima ,  Tomoko Misaki ,  Motonobu Matsuyama ,  Masayuki Haraguchi

发明人： Yuta Kanno ,  Makoto Nakajima ,  Tomoko Misaki ,  Motonobu Matsuyama ,  Masayuki Haraguchi

IPC分类号： G03F7/09 ,  H01L21/308 ,  H01L21/027

CPC分类号： G03F7/091 ,  C08G77/14 ,  C08G77/26 ,  C09D183/06 ,  G03F7/0752 ,  G03F7/11 ,  H01L21/0271 ,  H01L21/3081 ,  C08L33/16 ,  C09D183/08

摘要： A resist underlayer film forming composition for lithography includes: as a component (I), a fluorine-containing highly branched polymer obtained by polymerizing a monomer A having two or more radical polymerizable double bonds in the molecule thereof, a monomer B having a fluoroalkyl group and at least one radical polymerizable double bond in the molecule thereof, and a monomer D having a silicon atom-containing organic group and at least one radical polymerizable double bond in the molecule thereof, in the presence of a polymerization initiator C in a content of 5% by mole or more and 200% by mole or less, based on the total mole of the monomer A, the monomer B, and the monomer D; and as a component (II), a hydrolyzable silane compound, a hydrolysis product thereof, a hydrolysis-condensation product thereof, or a silicon-containing compound that is a combination of these compounds.

摘要翻译： 用于光刻的抗蚀剂下层膜形成组合物包括：作为组分（I），通过在其分子中聚合具有两个或更多个可自由基聚合的双键的单体A获得的含氟高支化聚合物，具有氟烷基的单体B 和分子中的至少一个自由基聚合性双键，以及分子中具有含硅原子的有机基团和至少一个自由基聚合性双键的单体D，在聚合引发剂C的存在下， 相对于单体A，单体B和单体D的总摩尔数为5摩尔％以上且200摩尔％以下。 作为组分（II），可水解硅烷化合物，其水解产物，其水解缩合产物或这些化合物的组合的含硅化合物。

公开(公告)号：US08470406B2

公开(公告)日：2013-06-25

申请号：US12064004

申请日：2006-08-10

申请人： Ichizo Kobayashi ,  Takeshi Sasakura ,  Toshiyuki Tanaka ,  Makoto Nakajima ,  Masaru Toida ,  Takahisa Isobe

发明人： Ichizo Kobayashi ,  Takeshi Sasakura ,  Toshiyuki Tanaka ,  Makoto Nakajima ,  Masaru Toida ,  Takahisa Isobe

IPC分类号： B05D1/02

CPC分类号： B28C5/026 ,  B01F5/0256 ,  B05B7/0416 ,  E02D31/02 ,  E02D31/04 ,  E21F15/10 ,  G21F9/36

摘要： The present invention provides a spray method and spray apparatus for bentonite-based material that allow forming a bentonite layer of high dry density. A spray apparatus 1 comprises a supersonic nozzle 2, to which a compressor 5 and a bentonite container 6 are connected. The supersonic nozzle 2 is fed compressed air from the compressor 5 and a bentonite-based material from the bentonite container 6. The compressed air, mixed with the bentonite-based material, is accelerated to supersonic speed when passing through a constriction portion 14 of the supersonic nozzle 2, and is sprayed at supersonic speed out of a jet orifice 11.

摘要翻译： 本发明提供了一种用于膨润土基材料的喷涂方法和喷涂装置，其允许形成高密度的膨润土层。 喷雾装置1包括超音速喷嘴2，压缩机5和膨润土容器6连接到该喷嘴上。 超音速喷嘴2从压缩机5输送压缩空气和来自膨润土容器6的膨润土类材料。与膨润土类材料混合的压缩空气通过膨润土类材料的收缩部14时被加速到超声速度 超音速喷嘴2，并且以超音速喷射出喷射孔11。

公开(公告)号：US20120315765A1

公开(公告)日：2012-12-13

申请号：US13580066

申请日：2011-02-18

申请人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

发明人： Makoto Nakajima ,  Yuta Kanno ,  Wataru Shibayama

IPC分类号： C09D183/08 ,  B32B27/00 ,  C07F7/04 ,  H01L21/311 ,  C08K3/20 ,  C08K5/41

CPC分类号： C07F7/1804 ,  C08G77/388 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/094 ,  Y10T428/31663

摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, includes as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): R1aR2bSi(R3)4−(a+b)  Formula (1) wherein R1 is Formula (2): in which R4 is an organic group, and R5 is a C1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X1 is Formula (3), Formula (4), or Formula (5): R2 is an organic group, and R3 is a hydrolysable group.

摘要翻译： 提供了用于形成能够用作硬掩模的抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物。 用于光刻的抗蚀剂下层膜形成组合物包括硅烷化合物，可水解的有机硅烷，其水解产物或其水解缩合产物，其中可水解的有机硅烷是式（1）的可水解的有机硅烷：R1aR2bSi（R3） 4-（a + b）式（1）其中R1是式（2）：其中R4是有机基团，R5是C1-10亚烷基，羟基亚烷基，硫醚键，醚键， 酯键或其组合，X 1为式（3），式（4）或式（5）：R 2为有机基团，R 3为可水解基团。