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    Metadata journaling with error correction redundancy
    34.
    发明授权
    Metadata journaling with error correction redundancy 有权
    具有纠错冗余度的元数据日记

    公开(公告)号：US09411717B2

    公开(公告)日：2016-08-09

    申请号：US13658643

    申请日：2012-10-23

    Applicant: Seagate Technology LLC

    Inventor： Ryan James Goss ,  David Scott Seekins ,  Mark Allen Gaertner

    IPC: G06F12/00 ,  G06F12/02 ,  G06F11/10 ,  G06F11/14

    CPC classification number: G06F12/0246 ,  G06F11/1012 ,  G06F11/1471

    Abstract: Method and apparatus for managing a memory, such as but not limited to a flash memory. In accordance with some embodiments, user data and associated metadata are stored in a memory. The metadata are arranged as a first sequence of snapshots of the metadata at different points in time during the operation of the memory, and a second sequence of intervening journals which reflect updates to the metadata from one snapshot to the next. Requested portions of the metadata are recovered from the memory using a selected snapshot in the first sequence and first and second journals in the second sequence.

    Abstract translation: 用于管理存储器的方法和装置，例如但不限于闪速存储器。 根据一些实施例，用户数据和相关联的元数据被存储在存储器中。 元数据被布置为在存储器的操作期间的不同时间点的元数据的第一序列，以及反映从一个快照到下一个快照到元数据的更新的中间日志的第二序列。 使用第一序列中的所选快照和第二序列中的第一和第二期刊从存储器中恢复请求的元数据部分。

    Variable data recovery scheme hierarchy
    35.
    发明授权
    Variable data recovery scheme hierarchy 有权
    可变数据恢复方案层次结构

    公开(公告)号：US09244766B2

    公开(公告)日：2016-01-26

    申请号：US14034251

    申请日：2013-09-23

    Applicant: Seagate Technology LLC

    Inventor： Ara Patapoutian ,  Bruce Douglas Buch ,  Ryan James Goss ,  Mark Allen Gaertner ,  Arvind Sridharan

    IPC: G06F11/10

    CPC classification number: G06F11/1048

    Abstract: Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, a memory has a plurality of solid-state non-volatile memory cells. A processing circuit is connected to the memory and configured to direct the execution of a plurality of read error recovery routines in response to at least one uncorrectable read error in a data set retrieved from the memory. The recovery routines are executed in a selected order based on an elapsed recovery time parameter for each of the recovery routines and an estimated probability of success of each of the recovery routines.

    Abstract translation: 用于管理诸如闪存之类的存储器中的数据的方法和装置。 根据一些实施例，存储器具有多个固态非易失性存储单元。 处理电路连接到存储器并且被配置为响应于从存储器检索的数据集中的至少一个不可校正的读取错误来引导执行多个读取错误恢复例程。 基于每个恢复例程的经过恢复时间参数和每个恢复例程的估计的成功概率，以所选择的顺序执行恢复例程。

    Forming a characterization parameter of a resistive memory element
    37.
    发明授权
    Forming a characterization parameter of a resistive memory element 有权
    形成电阻式存储元件的表征参数

    公开(公告)号：US09105360B2

    公开(公告)日：2015-08-11

    申请号：US13789123

    申请日：2013-03-07

    Applicant: Seagate Technology LLC

    Inventor： Ryan James Goss ,  Mark Allen Gaertner ,  Antoine Khoueir ,  David Scott Ebsen ,  Jon D. Trantham

    IPC: G06F12/00 ,  G11C29/50 ,  G06F11/10 ,  G11C13/00

    CPC classification number: G11C29/50008 ,  G06F11/10 ,  G06F11/1012 ,  G11C13/00 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0076 ,  G11C2013/0083 ,  G11C2013/0092

    Abstract: An incremental signal is defined that includes at least one of a duration and a peak voltage that is less than a respective minimum programming time or minimum programming voltage step of a resistive memory element. A characterization procedure is repeatedly performed that at least involves: applying a signal to the memory element, the signal being incremented by the incremental signal during each subsequent application; measuring a first resistance of the memory element in response to the signal; and c) measuring a second resistance of the memory element after a time period has elapsed from the measurement of the first resistance with no programming signal applied. In response to the first and second resistance measurements of the characterization procedure, a characterization parameter of the memory element is formed.

    Abstract translation: 定义增量信号，其包括持续时间和峰值电压中的至少一个小于电阻式存储器元件的相应的最小编程时间或最小编程电压阶跃。 重复执行表征过程，其至少包括：将信号施加到存储元件，在每个随后的应用期间，信号由增量信号递增; 响应于所述信号测量所述存储元件的第一电阻; 以及c）在没有施加编程信号的第一电阻的测量经过一段时间之后测量存储元件的第二电阻。 响应于表征过程的第一和第二电阻测量，形成存储元件的表征参数。

    TRANSFER UNIT MANAGEMENT
    38.
    发明申请
    TRANSFER UNIT MANAGEMENT 有权
    转移单位管理

    公开(公告)号：US20150074486A1

    公开(公告)日：2015-03-12

    申请号：US14025277

    申请日：2013-09-12

    Applicant: Seagate Technology LLC

    Inventor： Mark Allen Gaertner ,  Bruce Douglas Buch ,  Ryan James Goss

    IPC: G06F11/10 ,  G06F12/02

    CPC classification number: G06F11/1068 ,  G06F11/1048 ,  G06F12/0246 ,  G06F2212/7203 ,  G06F2212/7207

    Abstract: Method and apparatus for managing data in a memory, such as a flash memory. In accordance with some embodiments, a non-volatile memory is arranged into a plurality of blocks, with each of the blocks constituting an integral plural number N of fixed-sized, multi-bit transfer units. A processing circuit retrieves at least a portion of the data stored in a selected block to a volatile memory buffer in response to a transfer unit (TU) bit map. The TU bit map is stored in a memory and provides a multi-bit sequence of bits corresponding to the N transfer units of the selected block. The values of the bits in the multi-bit sequence of bits indicate whether the corresponding transfer units are to be retrieved.

    Abstract translation: 用于管理诸如闪存之类的存储器中的数据的方法和装置。 根据一些实施例，非易失性存储器被布置成多个块，其中每个块构成固定大小的多位传输单元的整数个数量N。 处理电路响应于传送单元（TU）位图，将存储在所选块中的数据的至少一部分检索到易失性存储器缓冲器。 TU位图被存储在存储器中并且提供与所选块的N个传送单元相对应的位的多位序列。 多比特序列中的比特值表示是否检索相应的传送单元。

    Data Update Management in a Cloud Computing Environment
    39.
    发明申请
    Data Update Management in a Cloud Computing Environment 审中-公开
    云计算环境中的数据更新管理

    公开(公告)号：US20140244896A1

    公开(公告)日：2014-08-28

    申请号：US13777810

    申请日：2013-02-26

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Ryan James Goss ,  David Scott Ebsen ,  Mark Allen Gaertner ,  Michael Joseph Steiner ,  Antoine Khoueir

    IPC: G06F3/06

    CPC classification number: G06F3/067 ,  G06F3/0611 ,  G06F3/0619 ,  G06F3/0649 ,  G06F3/0685

    Abstract: Method and apparatus for managing data in a cloud computing environment. In accordance with some embodiments, data updates are received to a multi-tier memory structure across a cloud network and stored as working data in an upper rewritable non-volatile memory tier of the memory structure. The working data are periodically logged to a lower non-volatile memory tier in the memory structure while a current version of the working data remain in the upper memory tier. The upper and lower memory tiers each are formed of rewritable memory cells having different constructions and storage attributes.

    Abstract translation: 用于在云计算环境中管理数据的方法和装置。 根据一些实施例，数据更新被接收到跨云网络的多层存储器结构，并作为工作数据存储在存储器结构的上部可重写非易失性存储器层中。 工作数据被定期地记录到存储器结构中的较低的非易失性存储器层，而当前版本的工作数据保留在上层存储器层中。 上层和下层记忆层每个由具有不同构造和存储属性的可重写存储单元形成。

    METHODS AND DEVICES TO INCREASE MEMORY DEVICE DATA RELIABILITY
    40.
    发明申请
    METHODS AND DEVICES TO INCREASE MEMORY DEVICE DATA RELIABILITY 审中-公开
    增加存储器件数据可靠性的方法和设备

    公开(公告)号：US20140129891A1

    公开(公告)日：2014-05-08

    申请号：US14154859

    申请日：2014-01-14

    Applicant: Seagate Technology LLC

    Inventor： Navneeth Kankani ,  Mark Allen Gaertner ,  Rodney Virgil Bowman ,  Ryan James Goss ,  David Scott Seekins ,  Tong Shirh Stone

    IPC: G06F11/10

    CPC classification number: G06F11/102 ,  G06F11/1012 ,  G11C29/52

    Abstract: A first data set is written to first memory units identified as having a higher data reliability and a second data set is written to second memory units identified as having a lower data reliability than the first memory units. In some cases, the second data set may include metadata or redundancy information that is useful to aid in reading and/or decoding the first data set. The act of writing the second data set increases the data reliability of the first data set. The second data set may be a null pattern, such as all erased bits.

    Abstract translation: 将第一数据集写入被识别为具有较高数据可靠性的第一存储器单元，并且将第二数据组写入被识别为具有比第一存储器单元更低的数据可靠性的第二存储器单元。 在一些情况下，第二数据集可以包括有助于读取和/或解码第一数据集的元数据或冗余信息。 写入第二数据集的动作增加了第一数据集的数据可靠性。 第二数据集可以是空模式，例如所有擦除位。

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