中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

48 records (took 0.017 seconds)

    Using different programming modes to store data to a memory cell
    33.
    发明授权
    Using different programming modes to store data to a memory cell 有权
    使用不同的编程模式将数据存储到存储单元

    公开(公告)号：US09099185B2

    公开(公告)日：2015-08-04

    申请号：US14136708

    申请日：2013-12-20

    Applicant: Seagate Technology LLC

    Inventor： YoungPil Kim ,  Rodney Virgil Bowman ,  Dadi Setiadi ,  Wei Tian

    IPC: G11C16/04 ,  G11C16/14 ,  G11C13/00

    CPC classification number: G11C16/14 ,  G11C11/56 ,  G11C11/5628 ,  G11C13/004 ,  G11C13/0069 ,  G11C16/10 ,  G11C16/3495 ,  G11C2211/5641

    Abstract: Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with some embodiments, a memory cell is provided with a plurality of available programming states to accommodate multi-level cell (MLC) programming. A control circuit stores a single bit logical value to the memory cell using single level cell (SLC) programming to provide a first read margin between first and second available programming states. The control circuit subsequently stores a single bit logical value to the memory cell using virtual multi-level cell (VMLC) programming to provide a larger, second read margin between the first available programming state and a third available programming state.

    Abstract translation: 用于管理诸如闪存阵列的存储器中的数据的方法和装置。 根据一些实施例，存储器单元被提供有多个可用的编程状态以适应多级单元（MLC）编程。 控制电路使用单电平单元（SLC）编程将单个位逻辑值存储到存储器单元，以在第一和第二可用编程状态之间提供第一读取裕度。 控制电路随后使用虚拟多电平单元（VMLC）编程将单个位逻辑值存储到存储器单元，以在第一可用编程状态和第三可用编程状态之间提供较大的第二读取余量。

    Write pole with varying bevel angles
    34.
    发明授权
    Write pole with varying bevel angles 有权
    用不同的斜角写入极点

    公开(公告)号：US09019659B1

    公开(公告)日：2015-04-28

    申请号：US14052300

    申请日：2013-10-11

    Applicant: Seagate Technology LLC

    Inventor： Huaqing Yin ,  Wei Tian ,  Zhe Shen ,  Kirill Rivkin ,  Jianhua Xue

    IPC: G11B5/147 ,  G11B5/187

    CPC classification number: G11B5/1871 ,  G11B5/1278 ,  G11B5/3116

    Abstract: A magnetic element can have at least a write pole configured with a write pole tip that has a tip surface oriented at a first angle with respect to an air bearing surface (ABS), a first bevel surface extending from the ABS and oriented at a second angle with respect to the ABS, and a second bevel surface extending from the ABS and oriented at a third angle with respect to the ABS. The first, second, and third angles may be configured to be different and non-orthogonal to each other.

    Abstract translation: 磁性元件可以具有至少一个写入极，其配置有写入磁极尖端，所述写入磁极尖端具有相对于空气轴承表面（ABS）以第一角度定向的尖端表面，从ABS延伸并且在第二角度定向的第一斜面 相对于ABS的角度以及从ABS延伸并相对于ABS以第三角度定向的第二斜面。 第一，第二和第三角度可以被配置为彼此不同且非正交。

    NON-MAGNETIC SEED LAYER METHOD AND APPARATUS
    35.
    发明申请
    NON-MAGNETIC SEED LAYER METHOD AND APPARATUS 有权
    非磁性种子层方法和装置

    公开(公告)号：US20140272471A1

    公开(公告)日：2014-09-18

    申请号：US13797165

    申请日：2013-03-12

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Wei Tian ,  Venkateswara Rao Inturi ,  Doug Lin ,  Huaqing Yin ,  Jiaoming Qiu

    IPC: G11B5/33

    CPC classification number: G11B5/235 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/23 ,  G11B5/232 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/332 ,  G11B5/6082 ,  Y10T428/115 ,  Y10T428/1193

    Abstract: In accordance with one embodiment, an apparatus can be configured that includes a main pole layer of magnetic material; a second layer of magnetic material; a first gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; a second gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; and wherein the second gap layer of non-magnetic material is disposed directly adjacent to the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, a method of manufacturing such a device may also be utilized.

    Abstract translation: 根据一个实施例，可以构造一种装置，其包括磁性材料的主极层; 第二层磁性材料; 设置在所述主极层和所述第二磁性材料层之间的非磁性材料的第一间隙层; 设置在主极层和第二磁性材料层之间的非磁性材料的第二间隙层; 并且其中所述非磁性材料的所述第二间隙层直接邻近所述第二磁性材料层设置。 根据一个实施例，这允许间隙用作第二层磁性材料的非磁性种子。 根据一个实施例，这允许间隙用作第二层磁性材料的非磁性种子。 根据一个实施例，还可以使用制造这种装置的方法。

    PROGRAMMABLE METALLIZATION MEMORY CELL WITH LAYERED SOLID ELECTROLYTE STRUCTURE
    37.
    发明申请
    PROGRAMMABLE METALLIZATION MEMORY CELL WITH LAYERED SOLID ELECTROLYTE STRUCTURE 有权
    具有层状固体电解质结构的可编程金属化存储单元

    公开(公告)号：US20130330901A1

    公开(公告)日：2013-12-12

    申请号：US13940547

    申请日：2013-07-12

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Nurul Amin ,  Insik Jin ,  Wei Tian ,  Andrew James Wirebaugh ,  Venugopalan Vaithyanathan ,  Ming Sun

    IPC: H01L45/00

    CPC classification number: H01L45/16 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/14

    Abstract: Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed.

    Abstract translation: 可编程金属化存储单元具有有源电极，相对的惰性电极和将活性电极与惰性电极分开的可变电阻元件。 可变电阻元件包括多个交替的固体电解质层和导电层。 导电层在可编程金属化存储单元中将有源电极电耦合到惰性电极。 也公开了形成它们的方法。

Patent Agency Ranking