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    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    32.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230047051A1

    公开(公告)日：2023-02-16

    申请号：US17979807

    申请日：2022-11-03

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Naoki OKUNO ,  Tetsuya KAKEHATA ,  Hiroki KOMAGATA ,  Yuji EGI

    IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

    Abstract: A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    33.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220246763A1

    公开(公告)日：2022-08-04

    申请号：US17608189

    申请日：2020-04-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Tsutomu MURAKAWA ,  Yoshinori ANDO ,  Tetsuya KAKEHATA ,  Yuichi SATO ,  Ryota HODO

    IPC: H01L29/786 ,  H01L29/66 ,  H01L27/108

    Abstract: A semiconductor device with less variations in transistor characteristics is provided. The semiconductor device includes: a first insulator; a first oxide over the first insulator; a first conductor and a second conductor over the first oxide; a first layer and a second layer which are in contact with a side surface of the first oxide; a second insulator over the first insulator, the first layer, the second layer, the first conductor, and the second conductor; a third insulator over the second insulator; a second oxide between the first conductor and the second conductor and over the first oxide; a fourth insulator over the second oxide; and a third conductor over the fourth insulator. Each of the first layer and the second layer includes a metal contained in the first conductor and the second conductor. The first insulator in a region in contact with the second insulator includes a region where a concentration of the metal is lower than that of the first layer or the second layer.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    34.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220173228A1

    公开(公告)日：2022-06-02

    申请号：US17437143

    申请日：2020-03-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yuichi SATO ,  Atsushi SHIBAZAKI ,  Kazuki TANEMURA ,  Takashi HIROSE

    IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12

    Abstract: A semiconductor device with little variation in transistor characteristics is provided. A first insulator to a third insulator are formed. A fourth insulator, a first oxide film, a second oxide film, a third oxide film, a first conductive film, a first insulating film, and a second conductive film are sequentially formed over the third insulator. Shaping them into island-like shapes to form a first oxide, a second oxide, a first oxide layer, a first conductive layer, a first insulating layer, and a second conductive layer. The second conductive layer is removed. A fifth insulator and a sixth insulator are formed over the fourth insulator, the first oxide, the second oxide, the first oxide layer, the first conductive layer, and the first insulating layer. An opening reaching the second oxide is formed to form a third oxide, a fourth oxide, a first conductor, a second conductor, a seventh insulator, and an eighth insulator. A fifth oxide, a ninth insulator, and a third conductor are formed in the opening. The fifth insulator is formed using a bias sputtering method.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
    35.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210242207A1

    公开(公告)日：2021-08-05

    申请号：US17052589

    申请日：2019-05-08

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Daigo ITO ,  Ryota HODO ,  Yoshinori ANDO ,  Tetsuya KAKEHATA

    IPC: H01L27/108

    Abstract: A semiconductor device that can be miniaturized or highly integrated is provided.
    A first conductor to a fourth conductor, a first insulator and a second insulator, and a first oxide and a second oxide are included, the first insulator is positioned over the first conductor, the first oxide is positioned over the first insulator, a first opening that reaches the first conductor is provided in the first insulator and the first oxide, the second conductor and the third conductor isolated from each other are positioned over the first oxide, at least part of the third conductor overlaps with the first opening and is in contact with a top surface of the first conductor, the second oxide is positioned over the first oxide so as to at least partly overlap with a region between the second conductor and the third conductor, the second insulator is positioned over the second oxide, and the fourth conductor is positioned over the second insulator.

    Semiconductor Device and Method for Manufacturing Semiconductor Device
    36.
    发明申请
    Semiconductor Device and Method for Manufacturing Semiconductor Device 有权

    公开(公告)号：US20210234046A1

    公开(公告)日：2021-07-29

    申请号：US17048255

    申请日：2019-04-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tetsuya KAKEHATA ,  Yuta ENDO

    IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

    Abstract: A semiconductor device with high on-state current and high reliability is provided. The semiconductor device includes first to fifth insulators, first to third oxides, and first to fourth conductors; the fifth insulator includes an opening in which the second oxide is exposed; the third oxide is placed in contact with a bottom portion of the opening and a side portion of the opening; the second insulator is placed in contact with the third oxide; the third conductor is provided in contact with the second insulator; the third insulator is placed in contact with a top surface of the third conductor and the second insulator; the fourth conductor is in contact with the third insulator and the top surface of the third conductor and placed in the opening with the third oxide, the second insulator, and the third insulator therebetween; the fourth insulator is in contact with a top surface of the first insulator, a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor; and the third insulator is less likely to pass oxygen and/or hydrogen than the second insulator.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    37.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20140035028A1

    公开(公告)日：2014-02-06

    申请号：US14043062

    申请日：2013-10-01

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tamae TAKANO ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

    IPC: H01L27/115

    CPC classification number: H01L27/1157 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/13 ,  H01L29/4234 ,  H01L29/792 ,  H01L29/7923

    Abstract: The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process.

    Abstract translation: 本发明提供一种半导体器件及其制造方法，其中在衬底上制造具有不同厚度的栅极绝缘膜的存储晶体管和多个薄膜晶体管。 本发明的特征在于存储晶体管与多个薄膜晶体管之间的结构差异。 具体地，存储晶体管和多个薄膜晶体管中的一些被设置为具有底栅结构，而另一个薄膜晶体管被设置为具有顶栅结构，这使得能够减小晶体管的特性缺陷并简化 其制造工艺。

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