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    Magnetic random access memory and method of reading data from the same
    31.
    发明申请
    Magnetic random access memory and method of reading data from the same 审中-公开
    磁性随机存取存储器和从其读取数据的方法

    公开(公告)号：US20050180205A1

    公开(公告)日：2005-08-18

    申请号：US11025841

    申请日：2004-12-30

    申请人： Wan-jun Park ,  Tae-wan Kim ,  Sang-jin Park ,  Dae-jeong Kim ,  Seung-jun Lee ,  Hyung-soon Shin

    发明人： Wan-jun Park ,  Tae-wan Kim ,  Sang-jin Park ,  Dae-jeong Kim ,  Seung-jun Lee ,  Hyung-soon Shin

    IPC分类号： G11C11/15 ,  G11C7/06 ,  G11C7/14 ,  G11C11/16 ,  G11C11/14

    CPC分类号： G11C7/14 ,  G11C7/062 ,  G11C11/1659 ,  G11C11/1673

    摘要： In a magnetic random access memory (MRAM), and a method of reading data from the same, the MRAM includes a memory cell having one transistor and one magnetic tunneling junction (MTJ) layer, and a reference cell that is operable for use as a basis when reading data stored in the memory cell, wherein the reference cell includes first and second MTJ layers provided in parallel to each other, and first and second transistors provided in parallel to each other, the first and second transistors being respectively connected in series to the first and second MTJ layers. Alternatively, one transistor having a driving capability corresponding to twice a driving capability of the transistor of the memory cell may be substituted for the first and second transistors of the reference cell.

    摘要翻译： 在磁性随机存取存储器（MRAM）中，以及从其读取数据的方法，MRAM包括具有一个晶体管和一个磁性隧道结（MTJ）层的存储单元，以及可操作用作 读取存储在存储单元中的数据的基础，其中参考单元包括彼此并联设置的第一和第二MTJ层，以及彼此并联设置的第一和第二晶体管，第一和第二晶体管分别串联连接到 第一和第二MTJ层。 或者，具有对应于存储器单元的晶体管的驱动能力的两倍的驱动能力的一个晶体管可以代替参考单元的第一和第二晶体管。

    Image apparatus and method for receiving video signal in multiple video modes
    32.
    发明授权
    Image apparatus and method for receiving video signal in multiple video modes 有权
    用于以多种视频模式接收视频信号的图像设备和方法

    公开(公告)号：US08780275B2

    公开(公告)日：2014-07-15

    申请号：US13619518

    申请日：2012-09-14

    申请人： Young-bin Choi ,  Seung-jun Lee

    发明人： Young-bin Choi ,  Seung-jun Lee

    IPC分类号： H04N5/268 ,  H04N5/46 ,  H04N5/64 ,  H04N21/436 ,  H04N5/44 ,  H04N21/485

    CPC分类号： H04N5/268 ,  H04N5/44 ,  H04N5/4403 ,  H04N21/436 ,  H04N21/4363 ,  H04N21/485 ,  H04N2005/4408

    摘要： An image apparatus and a method for receiving a video signal are provided. The image apparatus includes dedicated input terminals for receiving only particular video signals, and a common input terminal for receiving diverse video signals, and determines the format of video signals input through a corresponding input terminal and then displays the determined format on a screen. Accordingly, the number of input terminals can be reduced and the user can identify the format of the video signal input through the common input terminal.

    摘要翻译： 提供了一种用于接收视频信号的图像装置和方法。 图像装置包括用于仅接收特定视频信号的专用输入端子和用于接收各种视频信号的公共输入端子，并且确定通过相应的输入端子输入的视频信号的格式，然后在屏幕上显示所确定的格式。 因此，可以减少输入端子的数量，并且用户可以识别通过公共输入端子输入的视频信号的格式。

    Magnetic random access memory and method of reading data from the same
    33.
    发明授权
    Magnetic random access memory and method of reading data from the same 有权
    磁性随机存取存储器和从其读取数据的方法

    公开(公告)号：US08320166B2

    公开(公告)日：2012-11-27

    申请号：US12230855

    申请日：2008-09-05

    申请人： Wan-jun Park ,  Tae-wan Kim ,  Sang-jin Park ,  Dae-jeong Kim ,  Seung-jun Lee ,  Hyung-soon Shin

    发明人： Wan-jun Park ,  Tae-wan Kim ,  Sang-jin Park ,  Dae-jeong Kim ,  Seung-jun Lee ,  Hyung-soon Shin

    IPC分类号： G11C11/14 ,  G11C11/15 ,  G11C7/14

    CPC分类号： G11C7/14 ,  G11C7/062 ,  G11C11/1659 ,  G11C11/1673

    摘要： A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell.

    摘要翻译： 磁性随机存取存储器（MRAM）包括具有第一晶体管和第一磁性隧道结（MTJ）层的存储单元，以及参考单元，可以在读取存储在存储单元中的数据时作为基础，参考单元包括第二和 第三MTJ层彼此平行排列，以及与第二和第三MTJ层中的每一个串联连接的第二晶体管，第二晶体管具有对应于存储单元的第一晶体管的驱动能力的两倍的驱动能力。

    Method of manufacturing a non-volatile memory device
    35.
    发明申请
    Method of manufacturing a non-volatile memory device 有权
    制造非易失性存储器件的方法

    公开(公告)号：US20100173485A1

    公开(公告)日：2010-07-08

    申请号：US12458675

    申请日：2009-07-20

    申请人： Seung-jun Lee ,  Woon-kyung Lee ,  Seung-wan Hong

    发明人： Seung-jun Lee ,  Woon-kyung Lee ,  Seung-wan Hong

    IPC分类号： H01L21/28 ,  H01L21/3205

    CPC分类号： H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/11568

    摘要： A method of manufacturing a non-volatile memory device providing a semiconductor layer in which a cell region and a peripheral region are defined, sequentially forming a first insulating layer, a first conductive layer, a second insulating layer, and a second conductive layer on the cell region and the peripheral region, forming a trench for exposing a portion of the first conductive layer of the peripheral region, wherein the trench is formed by removing portions of the second conductive layer and the second insulating layer in the peripheral region, performing a trimming operation for removing portions of the second conductive layer and the second insulating layer of the cell region, forming a spacer on a side surface of the trench, and forming a silicide layer that is electrically connected to the first conductive layer, wherein the silicide layer is formed by performing a silicidation process on the spacer.

    摘要翻译： 一种制造提供其中限定了单元区域和外围区域的半导体层的非易失性存储器件的方法，其顺序地形成在第一绝缘层，第一导电层，第二绝缘层和第二导电层上 形成用于暴露周边区域的第一导电层的一部分的沟槽，其中通过去除周边区域中的第二导电层和第二绝缘层的部分形成沟槽，进行修整 用于去除所述单元区域的所述第二导电层和所述第二绝缘层的部分的工作，在所述沟槽的侧表面上形成间隔物，以及形成电连接到所述第一导电层的硅化物层，其中所述硅化物层为 通过在间隔物上进行硅化处理而形成。

    Semiconductor memory device and method of programming the same
    36.
    发明授权
    Semiconductor memory device and method of programming the same 有权
    半导体存储器件及其编程方法

    公开(公告)号：US07672154B2

    公开(公告)日：2010-03-02

    申请号：US12073678

    申请日：2008-03-07

    申请人： In-jun Hwang ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    发明人： In-jun Hwang ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1697 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675

    摘要： Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.

    摘要翻译： 提供一种半导体存储器件及其编程方法。 半导体存储器件包括模式输入值生成单元和逻辑运算单元。 模式输入值生成单元将当前驱动电路的输入值之间的连接状态改变为对应于至少两种操作模式中的每一种，并且响应于所述至少两种操作模式而连接到当前驱动电路的磁存储单元的逻辑功能 每个操作模式。 逻辑操作单元对根据每个操作模式定义的至少两个磁存储器单元的逻辑功能进行逻辑运算，并产生逻辑运算的结果。

    Fixing unit and image forming apparatus having the same
    37.
    发明授权
    Fixing unit and image forming apparatus having the same 失效
    固定单元和具有该固定单元的图像形成装置

    公开(公告)号：US07657216B2

    公开(公告)日：2010-02-02

    申请号：US11854645

    申请日：2007-09-13

    申请人： Seung-jun Lee ,  Hwan-guem Kim ,  Dong-jin Seol ,  Dong-woo Lee ,  Tae-gyu Kim

    发明人： Seung-jun Lee ,  Hwan-guem Kim ,  Dong-jin Seol ,  Dong-woo Lee ,  Tae-gyu Kim

    IPC分类号： G03G15/20

    CPC分类号： G03G15/2064

    摘要： A fixing unit which enables high-speed operation and miniaturization, and an image forming apparatus having the fixing unit, includes a heating member which is heated by a heat source, the heating member having a predetermined width; a rotating member to rotate in contact with the heating member; a driving member to rotate the rotating member; and a pressing member to press both sides of the heating member towards the driving member and to form a predetermined fixing nip between the rotating member and the driving member, wherein the heating member has a second moment of inertia which is set to maintain a fixing efficiency of 90% or more in a central portion of the heating member.

    摘要翻译： 具有能够进行高速运行和小型化的定影单元和具有该定影单元的图像形成装置包括由热源加热的加热构件，加热构件具有预定宽度; 旋转构件，其与加热构件接触旋转; 用于旋转所述旋转构件的驱动构件; 以及按压部件，其将所述加热部件的两侧压向所述驱动部件，并且在所述旋转部件与所述驱动部件之间形成预定的定影夹持部，所述加热部件具有设定为保持固定效率的第二惯性矩 在加热构件的中心部分中为90％以上。

    IMAGE APPARATUS AND METHOD FOR RECEIVING VIDEO SIGNAL
    38.
    发明申请
    IMAGE APPARATUS AND METHOD FOR RECEIVING VIDEO SIGNAL 有权
    用于接收视频信号的图像装置和方法

    公开(公告)号：US20090109335A1

    公开(公告)日：2009-04-30

    申请号：US12261668

    申请日：2008-10-30

    申请人： Young-bin Choi ,  Seung-jun Lee

    发明人： Young-bin Choi ,  Seung-jun Lee

    IPC分类号： H04N3/27

    CPC分类号： H04N5/268 ,  H04N5/44 ,  H04N5/4403 ,  H04N21/436 ,  H04N21/4363 ,  H04N21/485 ,  H04N2005/4408

    摘要： An image apparatus and a method for receiving a video signal are provided. The image apparatus includes dedicated input terminals for receiving only particular video signals, and a common input terminal for receiving diverse video signals, and determines the format of video signals input through a corresponding input terminal and then displays the determined format on a screen. Accordingly, the number of input terminals can be reduced and the user can identify the format of the video signal input through the common input terminal

    摘要翻译： 提供了一种用于接收视频信号的图像装置和方法。 图像装置包括用于仅接收特定视频信号的专用输入端子和用于接收各种视频信号的公共输入端子，并且确定通过相应的输入端子输入的视频信号的格式，然后在屏幕上显示所确定的格式。 因此，可以减少输入端子的数量，并且用户可以识别通过公共输入端子输入的视频信号的格式

    Magnetic random access memory and method of reading data from the same
    39.
    发明申请
    Magnetic random access memory and method of reading data from the same 有权
    磁性随机存取存储器和从其读取数据的方法

    公开(公告)号：US20090067233A1

    公开(公告)日：2009-03-12

    申请号：US12230855

    申请日：2008-09-05

    申请人： Wan-jun Park ,  Tae-wan Kim ,  Sang-jin Park ,  Dae-jeong Kim ,  Seung-jun Lee ,  Hyung-soon Shin

    发明人： Wan-jun Park ,  Tae-wan Kim ,  Sang-jin Park ,  Dae-jeong Kim ,  Seung-jun Lee ,  Hyung-soon Shin

    IPC分类号： G11C11/14 ,  G11C7/14 ,  G11C11/409

    CPC分类号： G11C7/14 ,  G11C7/062 ,  G11C11/1659 ,  G11C11/1673

    摘要： A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell.

    摘要翻译： 磁性随机存取存储器（MRAM）包括具有第一晶体管和第一磁性隧道结（MTJ）层的存储单元，以及参考单元，可以在读取存储在存储单元中的数据时作为基础，参考单元包括第二和 第三MTJ层彼此平行排列，以及与第二和第三MTJ层中的每一个串联连接的第二晶体管，第二晶体管具有对应于存储单元的第一晶体管的驱动能力的两倍的驱动能力。